NGTBN6SEG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective NonPunch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching applications. Incorporated into the device is a rugged copackaged reverse recovery diode with a low forward voltage. Features Low Saturation Voltage Resulting in Low Conduction Loss Low Switching Loss in Higher Frequency Applications Soft Fast Reverse Recovery Diode s Short Circuit Capability Excellent Current versus Package Size Performance Density This is a PbFree Device Typical Applications White Goods Appliance Motor Control General Purpose Inverter AC and DC Motor Control ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collectoremitter voltage V CES 6 V Collector current @ TC = 2 C @ TC = C I C 3 Pulsed collector current, T pulse limited by I CM 2 A T Jmax Diode forward current @ TC = 2 C @ TC = C I F 3 Diode pulsed current, T pulse limited by I FM 2 A T Jmax Gateemitter voltage V GE 2 V Power dissipation @ TC = 2 C @ TC = C Short circuit withstand time V GE = V, V CE = 4 V, T J + C P D 7 47 A A W t SC s Operating junction temperature range T J to + Storage temperature range T stg to + Lead temperature for soldering, / from case for seconds C C T SLD 26 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. A, 6 V V CEsat =. V TO22 CASE 22A STYLE 9 ORDERING INFORMATION Device Package Shipping NGTBN6SEG G G C E A Y WW G C C MARKING DIAGRAM TO22 (PbFree) E N6SG AYWW = Assembly Location = Year = Work Week = PbFree Package Units / Rail Semiconductor Components Industries, LLC, 2 May, 27 Rev. 7 Publication Order Number: NGTBN6SE/D
NGTBN6SEG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junction to case, for IGBT R JC. C/W Thermal resistance junction to case, for Diode R JC 2.3 C/W Thermal resistance junction to ambient R JA 6 C/W ELECTRICAL CHARACTERISTICS (T J = 2 C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, gateemitter shortcircuited V GE = V, I C = A V GE = V, I C = A, T J = 4 C V (BR)CES 6 72 66 V Collectoremitter saturation voltage V GE = V, I C = A V GE = V, I C = A, T J = C V CEsat.3...7.7.9 V Gateemitter threshold voltage V GE = V CE, I C = 2 A V GE(th) 4.. 6. V Collectoremitter cutoff current, gateemitter shortcircuited V GE = V, V CE = 6 V V GE = V, V CE = 6 V, T J = C I CES 2 A Gate leakage current, collectoremitter shortcircuited V GE = 2 V, V CE = V I GES na Forward Transconductance V CE = 2 V, I C = A g fs. S DYNAMIC CHARACTERISTIC Input capacitance C ies 9 Output capacitance V CE = 2 V, V GE = V, f = MHz C oes 7 Reverse transfer capacitance C res 42 Gate charge total Q g Gate to emitter charge V CE = 4 V, I C = A, V GE = V Q ge 6 Gate to collector charge Q gc 42 SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t d(on) 6 Rise time t r 2 Turnoff delay time T J = 2 C t d(off) 7 Fall time V CC = 4 V, I C = A R g = 22 t f 4 Turnon switching loss V GE = V / V E on. Turnoff switching loss E off.3 Total switching loss E ts.9 Turnon delay time t d(on) 6 Rise time t r 2 Turnoff delay time T J = C t d(off) Fall time V CC = 4 V, I C = A R g = 22 t f 26 Turnon switching loss V GE = V / V E on.6 Turnoff switching loss E off.6 Total switching loss E ts.2 DIODE CHARACTERISTIC Forward voltage V GE = V, I F = A V GE = V, I F = A, T J = C V F.6.7. pf nc ns mj ns mj V 2
NGTBN6SEG ELECTRICAL CHARACTERISTICS (T J = 2 C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit DIODE CHARACTERISTIC Reverse recovery time T J = 2 C t rr 27 ns Reverse recovery charge I F = A, V R = 2 V Q rr 3 nc Reverse recovery current di F /dt = 2 A/µs I rrm A Reverse recovery time T J = 2 C t rr 3 ns Reverse recovery charge I F = A, V R = 2 V Q rr nc Reverse recovery current di F /dt = 2 A/µs I rrm 7. A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3
NGTBN6SEG TYPICAL CHARACTERISTICS 6 4 3 2 T J = 2 C 2 V GE = 7 V to 3 V 3 4 V GE = V V GE = 9 V V GE = 7 V 6 7 6 4 3 2 T J = C 2 3 V GE = 7 V to 3 V V GE = V V GE = 9 V V GE = 7 V 4 6 7 V CE, COLLECTOREMITTER VOLTAGE (V) V CE, COLLECTOREMITTER VOLTAGE (V) Figure. Output Characteristics Figure 2. Output Characteristics 7 6 4 3 2 T J = 4 C V GE = 7 V to 3 V V GE = V V GE = 9 V V GE = 7 V 2 3 4 6 7 6 4 3 2 2 4 6 T J = 2 C 4 C C 2 4 V CE, COLLECTOREMITTER VOLTAGE (V) V GE, GATEEMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics V CE, COLLECTOREMITTER VOLTAGE (V) 3. 2. 2.... 2 4 I C = 3 A I C = A I C = A I C = A 7 3 6 CAPACITANCE (pf), 2 C ies C oes C res 3 4 6 7 9 T J, JUNCTION TEMPERATURE ( C) V CE, COLLECTOREMITTER VOLTAGE (V) Figure. V CE(sat) vs. T J Figure 6. Typical Capacitance 4
NGTBN6SEG TYPICAL CHARACTERISTICS 3 2 I F, FORWARD CURRENT (A) 3 2 2 T J = 2 C 4 C C.. 2 2. V GE, GATEEMITTER VOLTAGE (V) 2 3 4 V CES = 4 V 6 7 9 V F, FORWARD VOLTAGE (V) Q G, GATE CHARGE (nc) Figure 7. Diode Forward Characteristics Figure. Typical Gate Charge.7.6 Eon t f SWITCHING LOSS (mj)..4.3.2. 2 4 Eoff 6 V CE = 4 V V GE = V I C = A 2 4 6 SWITCHING TIME (ns) V CE = 4 V V GE = V I C = A 2 4 6 t d(off) t d(on) t r 2 4 6 T J, JUNCTION TEMPERATURE ( C) T J, JUNCTION TEMPERATURE ( C) Figure 9. Switching Loss vs. Temperature Figure. Switching Time vs. Temperature.4 SWITCHING LOSS (mj).2...6.4.2 V CE = 4 V V GE = V T J = C Eon Eoff 2 6 2 24 2 32 SWITCHING TIME (ns) t f t d(off) t d(on) t r V CE = 4 V V GE = V T J = C 2 6 2 24 2 32 Figure. Switching Loss vs. I C Figure 2. Switching Time vs. I C
NGTBN6SEG TYPICAL CHARACTERISTICS SWITCHING LOSS (mj).2.9.6.3 V CE = 4 V V GE = V I C = A T J = C 2 3 4 6 Eon Eoff 7 SWITCHING TIME (ns) t f t d(off) t d(on) t r 2 3 4 V CE = 4 V V GE = V I C = A T J = C 6 7 Rg, GATE RESISTOR ( ) Rg, GATE RESISTOR ( ) Figure 3. Switching Time vs. Rg Figure 4. Switching Time vs. Rg SWITCHING LOSS (mj).2.9.6.3 7 V GE = V I C = A T J = C 22 27 32 37 42 47 Eon V CE, COLLECTOREMITTER VOLTAGE (V) Figure. Switching Loss vs. V CE Eoff 2 SWITCHING TIME (ns) V GE = V I C = A T J = C 7 7 22 27 32 37 42 47 2 7 V CE, COLLECTOREMITTER VOLTAGE (V) Figure 6. Switching Time vs. V CE t f t d_off t d_on t r.. dc operation Single Nonrepetitive Pulse T C = 2 C Curves must be derated linearly with increase in temperature ms s s V CE, COLLECTOREMITTER VOLTAGE (V) Figure 7. Safe Operating Area.. V GE = V, T C = 2 C V CE, COLLECTOREMITTER VOLTAGE (V) Figure. Reverse Bias Safe Operating Area 6
NGTBN6SEG TYPICAL CHARACTERISTICS THERMAL RESPONSE (Z JC).. % Duty Cycle 2% % % 2% % Single Pulse Duty Factor = t /t 2 Peak T J = P DM x Z JC + T C....... PULSE TIME (sec) Figure 9. IGBT Transient Thermal Impedance R JC =.6 Junction R R 2 R n C i = i /R i C C 2 C n Case R i ( C/W) i (sec). 7.E..E4..2.33992.3..999.22.3.423. THERMAL RESPONSE (Z JC).. % Duty Cycle 2% % % 2% % Single Pulse Junction R R 2 R n Case C i = i /R i....... PULSE TIME (sec) Duty Factor = t /t 2 Peak T J = P DM x Z JC + T C C C 2 Figure 2. Diode Transient Thermal Impedance R JC = 3.76 C n R i ( C/W) i (sec).9.e7.497.e6.296.e. 7.E.299.E4.6273.2.73.443.499.2.3.49.3. Figure 2. Test Circuit for Switching Characteristics 7
NGTBN6SEG Figure 22. Definition of Turn On Waveform
NGTBN6SEG Figure 23. Definition of Turn Off Waveform 9
NGTBN6SEG PACKAGE DIMENSIONS TO22 CASE 22A9 ISSUE AH H Q Z L V G B 4 2 3 N D A K F T U S R J C T SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.M, 92. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A.7.62 4.4.7 B.3.4 9.66.3 C.6.9 4.7 4.3 D.2.3.64.96 F.42.6 3.6 4.9 G.9. 2.42 2.66 H..6 2. 4. J.4.24.36.6 K..62 2.7 4.27 L.4.6..2 N.9.2 4.3.33 Q..2 2.4 3.4 R.. 2.4 2.79 S.4...39 T.23.2.97 6.47 U....27 V.4 ---. --- Z ---. --- 2.4 STYLE 9: PIN. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patentmarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 92 E. 32nd Pkwy, Aurora, Colorado USA Phone: 336727 or 34436 Toll Free USA/Canada Fax: 3367276 or 344367 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 229 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 42 33 79 29 Japan Customer Focus Center Phone: 37 ON Semiconductor Website: Order Literature: http:///orderlit For additional information, please contact your local Sales Representative NGTBN6SE/D