Preliminary Technical Information GenX3 TM 12V IGBT High speed PT IGBTs for 2 - khz switching IXGHN12C3 V CES = 12V 11 = A V CE(sat).2V t fi(typ) = ns Symbol Test Conditions Maximum Ratings V CES = C to 1 C 12 V V CGR = C to 1 C, R GE = 1MΩ 12 V V GES Continuous ±2 V V GEM Transient ±3 V TO-27 (IXGH) G C E TAB = C (limited by leads) 7 A 11 = 11 C A M = C, 1ms A I A = C A E AS = C 7 mj SSOA V GE = 1V, = 1 C, R G = 3Ω M = 1 A (RBSOA) Clamped inductive load @V CE 12V P C = C W -... +1 C M 1 C T stg -... +1 C M d Mounting torque 1.13 / 1 Nm/lb.in. T L Maximum lead temperature for soldering 3 C T SOLD 1.mm (.2 in.) from case for 1s 2 C Weight g Symbol Test Conditions Characteristic Values ( = C, unless otherwise specified) Min. Typ. Max. BV CES = μa, V GE = V 12 V V GE(th) = μa, V CE = V GE 3.. V ES V CE = V CES 1 μa V GE = V = 1 C 2 ma I GES V CE = V, V GE = ±2V ±1 na V CE(sat) = A, V = 1V, Note 1.2 V GE = 1 C 2. V G = Gate C = Collector E = Emitter TAB = Collector Features International standard packages: JEDEC TO-27AD IGBT and anti-parallel FRED in one package MOS Gate turn-on - drive simplicity Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies 2 IXYS CORPORATION, All rights reserved DS9999(/)
IXGHN12C3 Symbol Test Conditions Characteristic Values ( = C, unless otherwise specified) Min. Typ. Max. g fs = A, V CE = 1V, Note 1 2 S C ies 19 pf C oes V CE = V, V GE = V, f = 1MHz 33 pf C res 13 pf Q g 19 nc Q ge = A, V GE = 1V, V CE =. V CES 2 nc Q gc nc 2 ns t ri Inductive load, = C 3 ns = A, V GE = 1V 2.2 mj t d(off) V CE = V, R G = 2Ω 123 ns t fi Note 1 ns E off.3 1.2 mj 2 ns t Inductive load, = 1 C ri 3 ns = A, V GE = 1V.3 mj t d(off) V CE = V, R G = 2Ω 17 ns t fi Note 1 31 ns E off 2.1 mj R thjc.27 C/W R thck.21 C/W TO-27 (IXGH) Outline 1 2 3 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Dim. Millimeter Inches Min. Max. Min. Max. A.7.3.1.29 A 1 2.2 2..7.12 A 2 2.2 2..9.9 b 1. 1... b 1 1. 2.13.. b 2 2.7 3.12.113.123 C...1.31 D 2. 21..19. E 1.7 1.2.1. e.2.72..2 L 19.1 2.32.7. L1..177 P 3. 3..1.1 Q.9..232.2 R.32.9.17.21 S.1 BSC 22 BSC e P Notes: 1. Pulse test, t 3μs; duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered,3,92,931,,9,91,237,1,12,,, B1,3,3,727, 7,,73 B2 7,17,33B2 by one or more of the following U.S. patents:,,72,17,,3,37,31,,9,123 B1,3,33,71, B2,79,92 7,3,97 B2,1,1,3,79,17,117,,71,3,72 B1,3,,71,3,771,7 B2 7,71,37
IXGHN12C3 1 9 7 3 2 1 Fig. 1. Output Characteristics @ ºC.. 1. 1. 2. 2. 3. 3..... V GE = 1V 13V 11V 9V 7V V 27 2 2 17 1 1 1 7 Fig. 2. Extended Output Characteristics @ ºC V GE = 1V 13V 11V 9V 7V V 3 9 12 1 1 21 2 27 3 Fig. 3. Output Characteristics @ 1ºC Fig.. Dependence of V CE(sat) on Junction Temperature 1 9 7 3 V GE = 1V 13V 11V 9V 7V VCE(sat) - Normalized 1.3 1.2 1.1 1..9..7 = 1A = A V GE = 1V 2 1 V.. = A.. 1. 1. 2. 2. 3. 3..... 7 1 1 1. Fig.. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 9 Fig.. Input Admittance 7. = ºC 7. 7 VCE - Volts...... = 1A A 3 2 = 1ºC ºC - ºC 3. A 3. 7 9 1 11 12 13 1 1 V GE - Volts 1...... 7. 7. V GE - Volts 2 IXYS CORPORATION, All rights reserved
IXGHN12C3 g f s - Siemens Fig. 7. Transconductance = - ºC ºC 3 1ºC 3 2 1 1 1 2 3 7 9 1 - Amperes VGE - Volts Fig.. Gate Charge 1 1 V CE = V = A 12 I G = 1mA 1 2 2 1 12 1 1 1 2 Q G - NanoCoulombs Fig. 9. Capacitance Fig. 1. Reverse-Bias Safe Operating Area 1, 11 1 Capacitance - PicoFarads 1, 1 f = 1 MHz C ies C oes C res 9 7 3 2 1 = 1ºC R G = 2Ω dv / dt < 1V / ns 1 1 1 2 3 3 2 1 12 Fig. 11. Maximum Transient Thermal Impedance 1. Z(th)JC - ºC / W.1.1.1.1.1.1 1 1 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_N12C3(7N)-3-
IXGHN12C3 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Switching Energy Loss vs. Collector Current... E off - - - - = 1ºC, V GE = 1V V CE = V 12 11 1.. 3. E off - - - - V CE = V 9 7 Eoff - MilliJoules.. 3. 3. = A 9 7 - MilliJoules Eoff - MilliJoules 3. 2. 2. 1. = 1ºC 3 - MilliJoules 2. = A 1. 2 2.. = ºC 1 1. 3 2 3 7 9 1 11 12 13 1 1 R G - Ohms. 2 3 7 - Amperes Fig. 1. Inductive Switching Energy Loss vs. Junction Temperature Fig. 1. Inductive Turn-off Switching Times vs. Gate Resistance Eoff - MilliJoules. 3. 3.2 2. 2. 2. 1. 1.2 E off - - - - V CE = V = A 11 1 9 7 - MilliJoules t f 3 3 2 1 t f t d(off) - - - - = 1ºC, V GE = 1V V CE = V = A = A 3 3 t d(off).. = A 3 2 1 2 1. 1 3 7 9 1 11 1 1 2 3 7 9 1 11 12 13 1 1 R G - Ohms Fig. 1. Inductive Turn-off Switching Times vs. Collector Current Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 2 3 1 t f 3 3 2 1 1 = ºC = 1ºC t f t d(off) - - - - V CE = V 2 22 2 1 1 1 12 1 t d(off) t f 3 2 1 1 t f t d(off) - - - - V CE = V = A = A 17 1 1 1 13 12 t d(off) 2 3 7 - Amperes 11 3 7 9 1 11 1 2 IXYS CORPORATION, All rights reserved
IXGHN12C3 Fig. 1. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 1 11 27 t r 1 1 12 1 2 t r - - - - = 1ºC, V GE = 1V V CE = V = A = A 3 3 2 t r 1 9 7 3 2 1 t r - - - - V CE = V = 1ºC, ºC 2 2 23 22 21 2 19 1 17 1 2 3 7 9 1 11 12 13 1 1 R G - Ohms 1 2 3 7 - Amperes Fig. 2. Inductive Turn-on Switching Times vs. Junction Temperature 9 2 t r 7 = A = A t r - - - - V CE = V 2 23 22 21 3 2 2 19 3 7 9 1 11 1 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_N12C3(7N)-3-