High Voltage IGBTs For Capacitor Discharge Applications Preliminary Technical Information IXGKN25 IXGXN25 S = 25V 11 = A (sat) 2.7V TO-264 (IXGK) Symbol Test Conditions Maximum Ratings S = 25 C to 15 C 25 V V CGR = 25 C to 15 C, R GE = 1MΩ 25 V V GES Continuous ±2 V V GEM Transient ±3 V 25 = 25 C ( Chip Capability ) 17 A 11 = 11 C A I LRMS = 25 C (Lead RMS Limit) 16 A M = 25 C, V GE = 2V, 1ms 53 A SSOA V GE =, T VJ = 125 C, R G = 1Ω M = A (RBSOA) Clamped Inductive Load @.8 S P C = 25 C 78 W -55... +15 C M 15 C T stg -55... +15 C T L Maximum Lead Temperature for Soldering 3 C T SOLD 1.6 mm (.62 in.) from Case for 1 26 C M d Mounting Torque ( IXGK ) 1.13/1 Nm/lb.in. F C Mounting Force ( IXGX ) 2..12/4.5..27 N/lb. Weight TO-264 1 g PLUS247 6 g G C E PLUS247 TM (IXGX) Features G C E Tab Tab G = Gate E = Emitter C = Collector Tab = Collector Very High Peak Current Capability Low Saturation Voltage MOS Gate Turn-On Rugged NPT Structure Molding Epoxies meet UL 94V- Flammability Classification Advantages Symbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise Specified) Min. Typ. Max. BS = 1mA, = V 25 V V GE(th) = 4mA, = V GE 3. 5. V ES = S, V = V 5 μa GE = 125 C 5 ma I GES = V, V GE = ±2V ± na Easy to Mount Space Savings High Power Density Applications Capacitor Discharge Pulser Circuits (sat) = A, V GE =, Note 1 2.7 V = 15A 3.6 V 21 IXYS CORPORATION, All Rights Reserved DS99826B(7/1)
Symbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise Specified) Min. Typ. Max. IXGKN25 IXGXN25 TO-264 AA ( IXGK) Outline g fs = 6A, = 1V, Note 1 35 58 S C ies 9 pf C oes = 25V, V GE = V, f = 1MHz 345 pf C res 11 pf Q g 41 nc Q ge = A, V GE =, =.5 S 63 nc Q gc 1 nc Back Side Terminals: 1 = Gate 2,4 = Collector 3 = Emitter t d(on) 55 ns Resistive Switching Times t r 225 ns = 15A, V GE = 27 ns = 125V, R G = 1Ω t f 455 ns R thjc.16 C/W R thck.15 C/W Note 1. Pulse test, t 3μs, duty cycle, d 2%. *Additional provision for lead-to-lead voltage isolation are required at >1V. Dim. Millimeter Inches Min. Max. Min. Max. A 4.82 5.13.19.22 A1 2.54 2.89..114 A2 2. 2.1.79.83 b 1.12 1.42.44.56 b1 2.39 2.69.94.16 b2 2.9 3.9.114.122 c.53.83.21.33 D 25.91 26.16 1.2 1.3 E 19.81 19.96.78.786 e 5.46 BSC.215 BSC J..25..1 K..25..1 L 2.32 2.83.8.82 L1 2.29 2.59.9.12 P 3.17 3.66.125.144 Q 6.7 6.27.239.247 Q1 8.38 8.69.33.342 R 3.81 4.32.15.17 R1 1.78 2.29.7.9 S 6.4 6.3.238.248 T 1.57 1.83.62.72 PLUS247 TM (IXGX) Outline PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21.19.25 A 1 2.29 2.54.9. A 2 1.91 2.16..85 b 1.14 1.4.45.55 b 1 1.91 2.13..84 b 2 2.92 3.12.115.123 C.61.8.24.31 D 2.8 21.34.819.84 E 15. 16.13.62.635 e 5.45 BSC.215 BSC L 19.81 2.32.78.8 L1 3.81 4.32.15.17 Q 5.59 6.2.22.244 R 4.32 4.83.17.19 IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,49,961 5,237,481 6,162,665 6,44,65 B1 6,683,344 6,727,585 7,5,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,85,72 5,17,58 5,63,37 5,381,25 6,259,123 B1 6,534,343 6,71,45 B2 6,9,692 7,63,9 B2 4,881,16 5,34,796 5,187,117 5,486,715 6,36,728 B1 6,583,55 6,71,463 6,771,478 B2 7,71,537
IXGKN25 IXGXN25 Fig. 1. Output Characteristics @ = 25ºC Fig. 2. Output Characteristics @ = 125ºC 3 25 V GE = 25V 2V 3 25 V GE = 25V 2V 15 1V 15 1V 5 5 5V.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5V.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 2.2 Fig. 3. Dependence of (sat) on Junction Temperature 8 Fig. 4. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage VCE(sat) - Normalized 2. 1.8 1.6 1.4 1.2 1. V GE = = 3A = 15A VCE - Volts 7 6 5 4 3 = 3A 15A = 25ºC.8.6 = A 2 A.4-5 -25 25 5 125 15 - Degrees Centigrade 1 6 8 1 12 14 16 18 2 22 24 26 V GE - Volts Fig. 5. Input Admittance Fig. 6. Transconductance 25 12 = - 4ºC 15 5 = 125ºC 25ºC - 4ºC g f s - Siemens 8 6 4 2 25ºC 125ºC 3.5 4. 4.5 5. 5.5 6. 6.5 7. 7.5 8. 8.5 9. V GE - Volts 5 15 25 - Amperes 21 IXYS CORPORATION, All Rights Reserved
IXGKN25 IXGXN25 VGE - Volts 16 14 12 1 8 6 4 = V = A I G = 1 ma Fig. 7. Gate Charge Capacitance - PicoFarads, 1, 1, f = 1MHz Fig. 8. Capacitance C ies C oes 2 C res 5 15 25 3 35 4 45 Q G - NanoCoulombs 1 5 1 15 2 25 3 35 4 225 Fig. 9. Reverse-Bias Safe Operating Area 1. Fig. 1. Maximum Transient Thermal Impedance 1 15 125 Z(th)JC - ºC / W..1 5 25 = 125ºC R G = 1Ω dv / dt < 1V / ns 25 5 125 15 1 225 25.1.1.1.1.1.1 1 1 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGKN25 IXGXN25 Fig. 11. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 12. Resistive Turn-on Rise Time vs. Collector Current 7 6 6 R G = 1Ω, V GE = = 125V 5 R G = 1Ω, V GE = = 125V t r 5 4 3 = 3A = 15A t r 4 3 = 125ºC = 25ºC 25 35 45 55 65 85 95 15 115 125 - Degrees Centigrade 125 15 1 225 25 2 3 - Amperes 9 Fig. 13. Resistive Turn-on Switching Times vs. Gate Resistance 8 8 Fig. 14. Resistive Turn-off Switching Times vs. Junction Temperature 45 8 t r t d(on) - - - - = 125ºC, V GE = 7 R G = 1Ω, V GE = 4 t r 7 6 5 4 3 = 125V = 3A = 15A 7 65 6 55 5 t d(on) t f 6 5 4 3 = 15A = 3A = 125V 35 3 25 15 t d(off ) 45 4 1 2 3 4 5 6 7 8 9 1 R G - Ohms 5 25 35 45 55 65 85 95 15 115 125 - Degrees Centigrade Fig. 15. Resistive Turn-off Switching Times vs. Collector Current Fig. 16. Resistive Turn-off Switching Times vs. Gate Resistance 48 38 18 44 36 6 16 R G = 1Ω, V GE = = 125V 4 34 = 125ºC, V GE = = 125V 6 t f 14 1 8 6 = 125ºC, 25ºC 36 32 28 24 t f 32 3 28 26 = 15A, 3A 525 45 3 3 4 16 24 225 12 22 15 8 125 15 1 225 25 2 3 - Amperes 1 2 3 4 5 6 7 8 9 1 R G - Ohms 21 IXYS CORPORATION, All Rights Reserved IXYS REF: IXG_N25(9P)87-1-1