N-Channel 6 V (-S) MOSFET SiA6J 2. mm Top View PowerPAK SC-7-6L Single 2. mm 2 3 G Bottom View PROUCT SUMMARY V S (V) 6 R S(on) max. () at V GS = V.8 R S(on) max. () at V GS = 7. V.22 Q g typ. (nc) 6.9 I (A) 2 a, g Configuration Single ORERING INFORMATION Package Lead (Pb)-free and halogen-free S 4 S 7 6 FEATURES TrenchFET Gen IV power MOSFET Very low R S - Q g Figure-of-Merit (FOM) Tuned for the lowest R S - Q oss % R g and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 APPLICATIONS Primary side switch Synchronous rectification C/C converters Motor drive switch Boost converter LE backlighting PowerPAK SC-7 SiA6J-T-GE3 G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (T A = 2 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT rain-source voltage V S 6 V Gate-source voltage V GS ± 2 T C = 2 C 2 a T C = 7 C 2 a Continuous drain current (T J = C) I T A =2 C b, c T A = 7 C 8. b, c A Pulsed drain current (t = μs) I M 4 T C = 2 C 2 a Continuous source-drain diode current I S T A = 7 C 2.9 b, c Single pulse avalanche current I AS 2 L =. mh Single pulse avalanche energy E AS 7.2 mj T C = 2 C 9 T C = 7 C 2 Maximum power dissipation P W T A = 2 C 3. b, c T A = 7 C 2.2 b, c Operating junction and storage temperature range T J, T stg - to + C Soldering recommendations (peak temperature) d, e 26 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient b, f t s R thja 28 36 C/W Maximum junction-to-case (drain) Steady state R thjc.3 6. Notes a. Package limited b. Surface mounted on " x " FR4 board c. t = s d. See solder profile (www.vishay.com/ppg?7327). The PowerPAK SC-7 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 8 C/W g. T C = 2 C S8-7-Rev. A, -Jan-8 ocument Number: 7628 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SiA6J SPECIFICATIONS (T J = 2 C, unless otherwise noted) PARAMETER SYMBOL TEST CONITIONS MIN. TYP. MAX. UNIT Static rain-source breakdown voltage V S V GS = V, I = 2 μa 6 - - V V S temperature coefficient V S /T J - 3 - I = 2 μa V GS(th) temperature coefficient V GS(th) /T J - -7. - mv/ C Gate-source threshold voltage V GS(th) V S = V GS, I = 2 μa 2-4 V Gate-source leakage I GSS V S = V, V GS = ± 2 V - - na V S = 6 V, V GS = V - - Zero gate voltage drain current I SS V S = 6 V, V GS = V, T J = 7 C - - μa On-state drain current a I (on) V S V, V GS = V - - A rain-source on-state resistance a V GS = V, I = 4 A -.42.8 R S(on) V GS = 7. V, I = 4 A -.66.22 Forward transconductance a g fs V S = V, I = A - 2 - S ynamic b Input capacitance C iss - 4 - Output capacitance C oss V S = 3 V, V GS = V, f = MHz - - pf Reverse transfer capacitance C rss - - V S = 3 V, V GS = V, I = 4 A - 8.9 3. Total gate charge Q g - 6.9. Gate-source charge Q gs V S = 3 V, V GS = 7. V, I = 4 A - 2. - nc Gate-drain charge Q gd -.8 - Output charge Q oss V S = 3 V, V GS = V - 9 - Gate resistance R g f = MHz.3.3 2.6 Turn-on delay time t d(on) - 2 Rise time t r V = 3 V, R L = 7., I 4 A, - Turn-off delay time t d(off) V GEN = V, R g = - 4 3 Fall time t f - Turn-on delay time t d(on) - 2 ns Rise time t r V = 3 V, R L = 7., I 4 A, - Turn-off delay time t d(off) V GEN = 7. V, R g = - 2 2 Fall time t f - rain-source Body iode Characteristics Continuous source-drain diode current I S T C = 2 C - - 2 Pulse diode forward current I SM - - 4 A Body diode voltage V S I S = 4 A, V GS = V -.8.2 V Body diode reverse recovery time t rr - 38 7 ns Body diode reverse recovery charge Q rr - 23 4 nc I F = 4 A, di/dt = A/μs, T J = 2 C Reverse recovery fall time t a - 7 - ns Reverse recovery rise time t b - 2 - Notes a. Pulse test; pulse width 3 μs, duty cycle 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S8-7-Rev. A, -Jan-8 2 ocument Number: 7628 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SiA6J 4 4 32 V GS = V thru 6 V 32 24 6 8 V GS = V V GS = 4 V.. 2 2. 3 V S - rain-to-source Voltage (V) 24 6 8 T C = 2 C T C = 2 C T C =- C 2 3 4 6 V GS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics.24 7.22 6 C iss R S(on) - On-Resistance (Ω).2.8.6.4.2 V GS = 7. V V GS = V C - Capacitance (pf) 4 3 2 C rss C oss. 8 6 24 32 4 On-Resistance vs. rain Current and Gate Voltage 2 3 4 6 V S - rain-to-source Voltage (V) Capacitance V GS - Gate-to-Source Voltage (V) 8 6 4 2 I = 4 A V S = V V S = 3 V V S = 48 V 2 4 6 8 Q g - Total Gate Charge (nc) R S(on) - On-Resistance (Normalized).8.6.4.2..8 I = 4 A V GS = 7. V V GS = V.6 - -2 2 7 2 T J - Junction Temperature ( C) line Gate Charge On-Resistance vs. Junction Temperature S8-7-Rev. A, -Jan-8 3 ocument Number: 7628 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SiA6J.8 T J = C I = 4 A I S - Source Current (A) T J = 2 C R S(on) - On-Resistance (Ω).6.4.2 T J = 2 C T J = 2 C..2.4.6.8..2 V S - Source-to-rain Voltage (V) 2 4 6 8 V GS - Gate-to-Source Voltage (V) Source-rain iode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 3.4 3 3.2 2 V GS(th) (V) 3. 2.8 2.6 I = 2μA Power (W) 2 2.4 2.2 2. - -2 2 7 2 T J - Temperature ( C) Threshold Voltage... Time (s) Single Pulse Power, Junction-to-Ambient Limited by R () S(on) I M Limited I (ON) Limited Safe Operating Area, Junction-to-Ambient μs ms ms ms. s s T A = 2 C Single pulse BV C dss Limited.. V S - rain-to-source Voltage (V) () V GS > minimum V GS at which R S(on) is specified S8-7-Rev. A, -Jan-8 4 ocument Number: 7628 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SiA6J 3 2 2 2 2 Package limited Power (W) 2 7 2 T C - Case Temperature ( C) 2 7 2 T C - Case Temperature ( C) Current erating a Power, Junction-to-Case Note a. The power dissipation P is based on T J max. = 2 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S8-7-Rev. A, -Jan-8 ocument Number: 7628 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
SiA6J uty Cycle =. Normalized Effective Transient Thermal Impedance...2...2 Single Pulse t t 2 t. uty Cycle, = t 2 2. Per Unit Base = R thja = 8 C/W 3. T JM - T A = P M Z (t) thja -4-3 -2 - Notes: P M 4. Surface Mounted Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance uty Cycle =..2... -4.2 Single Pulse -3-2 Square Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Case - maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?7628. S8-7-Rev. A, -Jan-8 6 ocument Number: 7628 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
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