GenX3 TM V IGBT High Speed PT IGBT for -khz Switching IXGHNC3 V CES = V 11 = A V CE(sat) V t fi (typ) = 5ns Symbol Test Conditions Maximum Ratings V CES = 25 C to 15 C V V CGR = 25 C to 15 C, R GE = 1MΩ V V GES Continuous ± V V GEM Transient ±3 V 25 = 25 C (Limited by Leads) 75 A 11 = 11 C A M = 25 C, 1ms 3 A I A = 25 C A E AS = 25 C mj SSOA V GE = 15V, T VJ = 125 C, R G = 3Ω M = 125 A (RBSOA) Clamped Inductive Load V CE V CES P C = 25 C 3 W -55... +15 C M 15 C T stg -55... +15 C T L Maximum Lead Temperature for Soldering 3 C T SOLD 1.6 mm (.62in.) from Case for 1s 2 C M d Mounting Torque 1.13/1 Nm/lb.in. Weight 6 g TO-247 AD G C E Features Optimized for Low Switching Losses Square RBSOA Avalanche rated International Standard Package Advantages Tab G = Gate C = Collector E = Emitter Tab = Collector High Power Density Low Gate Drive Requirement Applications Symbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise Specified) Min. Typ. Max. BV CES = 25μA, V GE = V V V GE(th) = 25μA, V CE = V GE 3. 5.5 V ES V CE = V CES, V GE = V 5 μa = 125 C 1 ma I GES V CE = V, V GE = ±V ± na V CE(sat) = A, V GE = 15V 2.2 V = 125 C 1.7 V High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts 1 IXYS CORPORATION, All Rights Reserved DS99928B(1/1)
IXGHNC3 Symbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise Specified) Min. Typ. Max. g fs = A, V CE = 1V, Note 1 23 38 S C ies 281 pf C oes V CE = 25V, V GE = V, f = 1MHz 21 pf C res pf Q g 115 nc Q ge = A, V GE = 15V, V CE =.5 V CES 22 nc Q gc 43 nc 21 ns t ri Inductive Load, = 25 C 33 ns = A, V GE = 15V. mj t d(off) V CE = 4V, R G = 3Ω 7 11 ns t fi Note 2 5 ns E off.45. mj 21 ns t ri Inductive Load, = 125 C 33 ns = A, V GE = 15V 1.25 mj t d(off) V CE = 4V, R G = 3Ω 112 ns t fi Note 2 86 ns E off. mj R thjc.33 C/W R thck.21 C/W TO-247 (IXGH) Outline 1 2 3 e P Terminals: 1 - Gate 2 - Collector 3 - Emitted Tab - Collector Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3.185.9 A 1 2.2 4.87.12 A 2 2.2 2.6.59.98 b 1. 1.4..55 b 1 1.65 2.13.65.84 b 2 2.87 3.12.113.123 C.4.8.16.31 D. 21.46.819.845 E 15.75 16.26.61.6 e 5. 5.72.5.225 L 19.81.32.7. L1 4.5.177 P 5 3.65.1.144 Q 5.89 6..232.252 R 4.32 5.49.17.216 S 6.15 BSC 242 BSC Notes: 1. Pulse test, t 3μs, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V CE (Clamp), or R G. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,49,961 5,237,481 6,162,665 6,4,65 B1 6,683,344 6,727,585 7,5,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,85,72 5,17,58 5,63,37 5,381,25 6,259,123 B1 6,534,343 6,71,5 B2 6,759,692 7,63,975 B2 4,881,16 5,34,796 5,187,117 5,486,715 6,36,728 B1 6,583,55 6,71,463 6,771,478 B2 7,71,537
IXGHNC3 7 5 3 1 Fig. 1. Output Characteristics @ = 25ºC..4.8 1.2 1.6 2. 2.4 2.8 3.2 13V 11V 9V 7V 5V 3 25 15 5 Fig. 2. Extended Output Characteristics @ = 25ºC 13V 11V 9V 7V 5V 2 4 6 8 1 12 14 16 7 5 3 Fig. 3. Output Characteristics @ = 125ºC 13V 11V 9V 7V VCE(sat) - Normalized 1.2 1.1 1..9.8.7 Fig. 4. Dependence of V CE(sat) on Junction Temperature = A = A 1 5V.6 = A..4.8 1.2 1.6 2. 2.4 2.8 3.2.5 25 5 75 125 15 - Degrees Centigrade 6. Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 1 Fig. 6. Input Admittance 5.5 = 25ºC 1 5. 1 VCE - Volts 4.5 4. = A A A = 125ºC 25ºC - ºC 3. 2. 6 7 8 9 1 11 12 13 14 15 V GE - Volts 4. 4.5 5. 5.5 6. 6.5 7. 7.5 8. 8.5 9. 9.5 V GE - Volts 1 IXYS CORPORATION, All Rights Reserved
IXGHNC3 7 5 Fig. 7. Transconductance = - ºC 25ºC 16 14 12 V CE = 3V = A I G = 1 ma Fig. 8. Gate Charge g f s - Siemens 3 125ºC VGE - Volts 1 8 6 4 1 2 1 1 1 - Amperes 1 3 5 7 9 11 1 Q G - NanoCoulombs 1, Fig. 9. Capacitance 1 Fig. 1. Reverse-Bias Safe Operating Area 1 Capacitance - PicoFarads 1, f = 1 MHz C ies C oes C res = 125ºC R G = 3Ω dv / dt < 1V / ns 1 5 1 15 25 3 35 15 25 3 35 45 5 55 1. Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W.1.1.1.1.1.1 1 1 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGHNC3 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Switching Energy Loss vs. Collector Current 4. 5. 4. 4. Eoff - MilliJoules 3. 2. 1. E off - - - - = 125ºC, V CE = 4V = A = A 4.5 4. 3. 2. - MilliJoules Eoff - MilliJoules 3. 2. 1. E off - - - - V CE = 4V = 125ºC = 25ºC 3. 2. 1. - MilliJoules.5.5.5. 1. 3 4 5 6 7 8 9 1 11 12 13 14 15 R G - Ohms.. 25 3 35 45 5 55 65 7 75 - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 4. 17 2 3. E off - - - - 1 15 t f t d(off) - - - - = 125ºC, 2 2 Eoff - MilliJoules 2. 1. V CE = 4V = A 3. 2. - MilliJoules t f 1 13 1 11 9 V CE = 4V = A = A 2 1 1 1 1 t d(off).5 = A 1. 7..5 25 35 45 55 65 75 85 95 15 115 125 - Degrees Centigrade 3 4 5 6 7 8 9 1 11 12 13 14 15 R G - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 1 1 1 13 1 t f t d(off) - - - - 13 1 t f t d(off) - - - - 1 t f 1 1 V CE = 4V = 125ºC = 25ºC 1 11 9 t d(off) t f 1 V CE = 4V = A = A 11 9 t d(off) 7 7 25 3 35 45 5 55 65 7 75 - Amperes 25 35 45 55 65 75 85 95 15 115 125 - Degrees Centigrade 1 IXYS CORPORATION, All Rights Reserved
IXGHNC3 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 1 5 11 28 t r 1 t r - - - - = 125ºC, V CE = 4V = A = A 45 35 3 25 t r 9 7 5 t r - - - - V CE = 4V = 25ºC, 125ºC 27 26 25 24 23 22 21 3 19 15 3 4 5 6 7 8 9 1 11 12 13 14 15 R G - Ohms 1 18 25 3 35 45 5 55 65 7 75 - Amperes 11 Fig.. Inductive Turn-on Switching Times vs. Junction Temperature 29 t r - - - - 28 t r 9 7 5 V CE = 4V = A = A 27 26 25 24 23 22 3 21 25 35 45 55 65 75 85 95 15 115 125 - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_NC3(6D)1-15-1-E