200mW, PNP Small Signal Transistor

Similar documents
BC807-16W/-25W/-40W Taiwan Semiconductor

BC846AW - BC850CW Taiwan Semiconductor. NPN Transistor. Small Signal Product SOT-323 FEATURES MECHANICAL DATA

350mW, PNP Small Signal Transistor

Low VF SMD Schottky Barrier Diode

BAT54 / A / C / S Taiwan Semiconductor

BAT54T/AD/CD/SD/BR Taiwan Semiconductor Small Signal Product 200mW Surface Mount Schottky Barrier Diode

200mA, 30V Schottky Barrier Diode

350mW, SMD Switching Diode

Type Marking Pin Configuration Package BCX42 DKs 1 = B 2 = E 3 = C SOT23. Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CEO

BC847BPDXV6T5G. SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor

BC846, BC847, BC848 Series. General Purpose Transistors. NPN Silicon

BDP947_BDP949_BDP953. Silicon NPN Transistors. For AF driver and output stages High collector current High current gain

Type Marking Pin Configuration Package BCX42 BSS63 1 = B 1 = B 2 = E 2 = E

BC856ALT1 Series. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available. Features.

Type Marking Pin Configuration Package BSP60 BSP61 BSP62 2=C 2=C 2=C 3=E 3=E 3=E

Parameter Test condition Symbol Value Unit Junction ambient 1) R thja 300 K/W

Type Marking Pin Configuration Package BC BC807-16W BC BC807-25W BC BC807-40W BC BC808-25W BC808-40

BC846ALT1 Series. General Purpose Transistors. NPN Silicon

Type Marking Pin Configuration Package BFN24 BFN26 1=B 1=B

Type Marking Pin Configuration Package BFN38 BFN38 1=B 2=C 3=E 4=C - - SOT223

COMPLEMENTARY NPN/PNP TRANSISTOR

BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G

Type Marking Pin Configuration Package BCX68-10 BCX68-16 BCX =B 1=B 1=B

Type Marking Pin Configuration Package BCP68-25 * 1=B 2=C 3=E 4=C - - SOT223

BCP51...-BCP53... Type Marking Pin Configuration Package BCP51 BCP51-16 BCP52-16 BCP53-10 BCP SOT223 SOT223 SOT223 SOT223 SOT223

BC487, BC487B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM

C1 B2 E2 TR2 TR1 EHA Type Marking Pin Configuration Package BC817UPN 1Bs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74

DATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Mar 27.

Type Marking Pin Configuration Package BCM846S 1Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363

BC337, BC337-25, BC Amplifier Transistors. NPN Silicon. These are Pb Free Devices. Features MAXIMUM RATINGS

B 1 E 1. C 1 Internal Schematic (TOP VIEW) E 1, B 1, C 1 = PNP3906 Section E 2, B 2, C 2 = NPN3904 Section

BCW60, BCX70. NPN Silicon AF Transistors. For AF input stages and driver applications High current gain Low collector-emitter saturation voltage

PZT2222A. NPN Silicon Planar Epitaxial Transistor SOT 223 PACKAGE NPN SILICON TRANSISTOR SURFACE MOUNT

BCW61..., BCX71... PNP Silicon AF Transistors. For AF input stages and driver applications High current gain Low collector-emitter saturation voltage

LOW V CE(SAT) NPN SURFACE MOUNT TRANSISTOR. Top View

2N5401. PNP Silicon. These are Pb Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM

BC556B, BC557A, B, C, BC558B. Amplifier Transistors. PNP Silicon BC556B PNP AUDIO 100MA 65V 500MW TO92.

C1 (2) C2 (1) E1 (3) E2 (4) Type Marking Pin Configuration Package BCV61B BCV61C 2 = C1 2 = C1 1 = C2 1 = C2

DATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Apr 09

DATA SHEET. BC846; BC847; BC848 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Feb 04

DATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 12

Pb-free (RoHS compliant) package Qualified according AEC Q101 C1 (2) Type Marking Pin Configuration Package BCV62A BCV62B BCV62C 2 = C1 2 = C1 2 = C1

PN2222A TO - 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN) (TO-92) FEATURES

BC846BDW1, BC847BDW1, BC848CDW1. Dual General Purpose Transistors. NPN Duals

Type Marking Pin Configuration Package BFR93A R2s 1=B 2=E 3=C SOT23

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

MMBT5550L, MMBT5551L, SMMBT5551L. High Voltage Transistors. NPN Silicon

BC556B, BC557A, B, C, BC558B, C. Amplifier Transistors. PNP Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS

2N4401 TO - 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN) (TO-92) FEATURES

DATA SHEET. BFG31 PNP 5 GHz wideband transistor DISCRETE SEMICONDUCTORS Sep 12

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

BC BC Pb-containing package may be available upon special request

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS

2N4123, 2N4124. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS

Type Marking Pin Configuration Package BFR183 RHs 1=B 2=E 3=C SOT23

P2N2907ARL1G. Amplifier Transistor. PNP Silicon. These are Pb -Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

BC817-AU SERIES NPN GENERAL PURPOSE TRANSISTORS. VOLTAGE 45 Volts POWER 330 mw FEATURES MECHANICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS

BFS483. Low Noise Silicon Bipolar RF Transistor

65 V, 100 ma NPN/PNP general-purpose transistor. Table 1. Product overview Type number Package NPN/NPN PNP/PNP Nexperia JEITA

MMBT3906L, SMMBT3906L. General Purpose Transistor. PNP Silicon

2N5550, 2N5551. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM

BCM857BV; BCM857BS; BCM857DS

Type Marking Pin Configuration Package BFR93AW R2s 1=B 2=E 3=C SOT323

BCR191.../SEMB1 BCR191/F/L3 BCR191T/W BCR191S SEMB1. Type Marking Pin Configuration Package BCR191 BCR191F BCR191L3 2=E 2=E 2=E =C 3=C 3=C

MC3346. General Purpose Transistor Array One Differentially Connected Pair and Three Isolated Transistor Arrays

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

E 1 C 2 C 1 E 2 B 2 B 1 B 2 E 2

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

DATA SHEET. BC368 NPN medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Dec 01.

Type Marking Pin Configuration Package BCW66KF BCW66KG BCW66KH 1=B 1=B 1=B

Type Marking Pin Configuration Package BFR93AW R2s 1=B 2=E 3=C SOT323

DATA SHEET. BC369 PNP medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Nov 20.

Type Marking Pin Configuration Package BFR182W RGs 1=B 2=E 3=C SOT323

2SC3457. isc Silicon NPN Power Transistor. isc Product Specification. INCHANGE Semiconductor. isc Website:

DATA SHEET. PBSS4480X 80 V, 4 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2004 Aug 5

Type Marking Pin Configuration Package BCW66F BCW66KF* BCW66G BCW66KG* BCW66H BCW66KH* 1=B 1=B 1=B 1=B 1=B 1=B

2N4403. PNP Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM

Type Marking Pin Configuration Package BFQ19S FG 1 = B 2 = C 3 = E SOT89

2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM

2N5655G, 2N5657G. Plastic NPN Silicon High-Voltage Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON VOLTS, 20 WATTS

BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor

PN2222, PN2222A. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS MARKING DIAGRAM

DATA SHEET. PBSS4250X 50 V, 2 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Jun 17

DISCRETE SEMICONDUCTORS DATA SHEET. BFQ149 PNP 5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14

DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D302. PBSS4240DPN 40 V low V CEsat NPN/PNP transistor. Product specification 2003 Feb 20

DATA SHEET. PBSS5350D 50 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 13.

DATA SHEET. PBSS4540Z 40 V low V CEsat NPN transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 14.

PNP power transistor

DATA SHEET. PEMD48; PUMD48 NPN/PNP resistor-equipped transistors; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω DISCRETE SEMICONDUCTORS

150 V, 2 A NPN high-voltage low V CEsat (BISS) transistor

Lead-free Green C 2 B 1 E 1 E 2 B 2 C T A = 25 C unless otherwise specified

DATA SHEET. BC846W; BC847W; BC848W NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 23

DATA SHEET. BFQ226 NPN video transistor DISCRETE SEMICONDUCTORS Sep 04

DATA SHEET. BCP69 PNP medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Nov 15.

General Purpose Transistors

Type Marking Pin Configuration Package SMBTA06/MMBTA06 s1g 1=B 2=E 3=C SOT23

CNY17F-4. Pb Pb-free. Optocoupler, Phototransistor Output, No Base Connection. Vishay Semiconductors

Transcription:

200mW, PNP Small Signal Transistor FEATURES Epitaxial planar die construction Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code MECHANICAL DATA Case : SOT 23 small outline plastic package Terminal : Matte tin plated, lead free, solderable per MILSTD202, method 208 guaranteed High temperature soldering guaranteed : 260 C/s Weight : 0.008 grams (approximately) SOT23 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) PARAMETER Power Dissipation CollectorBase oltage CollectorEmitter oltage EmitterBase oltage Collector Current Junction and Storage Temperature Range BC857 BC857 SYMBOL ALUE UNIT P D CBO CEO EBO I C 200 mw 80 50 30 65 45 30 5 0.1 A T J, T STG 55 to + 150 C CollectorBase Breakdown oltage CollectorEmitter Breakdown oltage BC857 I C = μa I E = 0 BC857 I C = ma I B = 0 SYMBOL EmitterBase Breakdown oltage I E = 1μA I C = 0 (BR)EBO 5 Collector Cutoff Current CB = 70 BC857 CB = 45 CB = 25 Emitter Cutoff Current EB = 5 I C =0 I EBO 0.1 μa DC Current Gain B, BC857B, B CE = 5 I C = 2mA h FE BC857C, C CollectorEmitter Saturation oltage PARAMETER A, BC857A, A (BR)CEO UNIT I C = 0mA I B = 5mA CE(sat) 0.65 BaseEmitter Saturation oltage I C = 0mA I B = 5mA BE(sat) 1.1 Transition Frequency CE = 5 I C = ma f= 0MHz f T 0 MHz I E = 0 (BR)CBO I CBO MIN 80 50 30 65 45 30 125 220 420 MAX 0 0 0 250 475 800 na ersion : H1606

C ob [pf], Capacitance f T [MHz], Current GainBandwidth Product BE(sat), CE(sat) [], Saturation oltage h FE, DC Current Gain A SERIES RATINGS AND CHARACTERISTIC CURES (TA=25 C unless otherwise noted) 50 Fig. 1 Static Characteristic 00 Fig. 2 DC Current Gain 45 40 35 30 25 I B = 400μA I B = 350μA I B = 300μA I B = 250μA I B = 200μA 0 CE = 5 20 15 I B = 150μA I B = 0μA 5 0 I B = 50μA 0 2 4 6 8 12 14 16 18 20 0.1 1.0.0 0.0 CE [], CollectorEmitter oltage Fig.3 BaseEmitter Saturation oltage S.CollectorEmitter Saturation Fig. 4 BaseEmitter On oltage 0. I C = I B CE = 5 1 BE (sat). 0.1 CE (sat) 1. 0.01 0.1 1 0 0. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 BE [], BaseEmitter oltage Fig.5 Collector Output Capacitance Fig. 6 Current Gain Bandwidth Product 0 f=1mhz I E =0 00 f=1mhz I E =0 0 1 1.. 0. 00. CB [], CollectorBase oltage 1 0. 1.. 0. ersion : H1606

RATINGS AND CHARACTERISTIC CURES (TA=25 C unless otherwise noted) Fig. 7 DC Current Gain as a Function of Collector Current; Typical alues Fig. 8 BaseEmitter oltage as a Function of Collector Current; Typical alues h FE 500 450 400 h FE I C BC857A: CE=5 BE 1200 00 BE I C BC857A: CE=5 350 300 Ta=150 O C 800 Ta=55 O C 250 200 150 0 50 Ta=25 O C Ta=55 O C 600 400 200 Ta=25 O C Ta=150 O C 0 0.01 0.1 1 0 00 I C (ma) 0 0.01 0.1 1 0 00 I C (ma) ersion : H1606

Ordering information Packing code Packing code suffix(*) Package Packing BC85xx (Note 1) RF G SOT23 3K / 7 " Reel Note 1 : "xx" is Device Code from "6A" thru "8C". *: optional available Example Preferred Packing code Packing code suffix Description A RFG A RF G Green compound ersion : H1606

Dimensions DIM. Unit(mm) Unit(inch) Min Max Min Max A 2.70 3. 0.6 0.122 B 1. 1.50 0.043 0.059 C 0.30 0.51 0.012 0.020 D 1.78 2.04 0.070 0.080 E 2.20 2.60 0.087 0.2 F 0.90 1.30 0.035 0.051 G H 0.550 REF 0.1 REF 0.022 REF 0.004 REF Suggested PAD Layout DIM. A B C D Unit(mm) Unit(inch) Typ. Typ. 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 Marking A B BC857A BC857B BC857C A B C Marking 3A 3B 3E 3F 3G 3J 3K 3L ersion : H1606

Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, lifesaving, or lifesustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. ersion : H1606