BUK442A/B GENERAL DESCRIPTION QUICK REFERENCE DATA Nchannel enhancement mode SYMBOL PARAMETER MAX. UNIT fieldeffect power transistor in a plastic envelope suitable for use in surface V DS Drainsource voltage 2 V mount applications. I D Drain current (DC) 9.2 A The device is intended for use in P tot Total power dissipation 9 W Switched Mode Power Supplies T j Junction temperature 17 C (SMPS), motor control, welding, R DS(ON) Drainsource onstate.4 Ω DC/DC and AC/DC converters, and in general purpose switching resistance applications. PINNING TO22AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 gate tab d 2 drain 3 source g tab drain 1 2 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DS Drainsource voltage 2 V V DGR Draingate voltage R GS = 2 kω 2 V ±V GS Gatesource voltage 3 V 2A 2B I D Drain current (DC) T mb = 2 C 9.2 8.2 A I D Drain current (DC) T mb = 1 C 6..8 A I DM Drain current (pulse peak value) T mb = 2 C 36 33 A P tot Total power dissipation T mb = 2 C 9 W T stg Storage temperature 17 C T j Junction Temperature 17 C THERMAL RESISTANCES R th jmb Thermal resistance junction to 1.67 K/W mounting base R th ja Thermal resistance junction to 6 K/W ambient February 1996 1 Rev 1.
BUK442A/B STATIC CHARACTERISTICS T mb = 2 C unless otherwise specified V (BR)DSS Drainsource breakdown voltage V GS = V; I D =.2 ma 2 V V GS(TO) Gate threshold voltage V DS = V GS ; I D = 1 ma 2.1 3. 4. V I DSS Zero gate voltage drain current V DS = 2 V; V GS = V; T j = 2 C 1 1 µa I DSS Zero gate voltage drain current V DS = 2 V; V GS = V; T j =12 C.1 1. ma I GSS Gate source leakage current V GS = ±3 V; V DS = V 1 1 na R DS(ON) Drainsource onstate resistance V GS = 1 V; I D = 3. A BUK442A BUK442B.3.4.4. Ω Ω DYNAMIC CHARACTERISTICS T mb = 2 C unless otherwise specified g fs Forward transconductance V DS = 2 V; I D = 3. A 3.. S C iss Input capacitance V GS = V; V DS = 2 V; f = 1 MHz 7 8 pf C oss Output capacitance 1 16 pf C rss Feedback capacitance 8 pf t d on Turnon delay time V DD = 3 V; I D = 2.9 A; 12 2 ns t r Turnon rise time V GS = 1 V; R GS = Ω; 4 7 ns t d off t f Turnoff delay time Turnoff fall time R gen = Ω 8 4 12 6 ns ns L d Internal drain inductance Measured from contact screw on 3. nh tab to centre of die L d Internal drain inductance Measured from drain lead 6 mm from package to centre of die 4. nh L s Internal source inductance Measured from source lead 6 mm 7. nh from package to source bond pad REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T mb = 2 C unless otherwise specified I DR Continuous reverse drain current 9.2 A I DRM Pulsed reverse drain current 36 A V SD Diode forward voltage I F = 9.2 A ; V GS = V 1.1 1.3 V t rr Q rr Reverse recovery time Reverse recovery charge I F = 9.2 A; di F /dt = 1 A/µs; V GS = V; V R = 1 V 18 1.2 ns µc AVALANCHE LIMITING VALUE T mb = 2 C unless otherwise specified W DSS Drainsource nonrepetitive I D = 9 A ; V DD 1 V ; mj unclamped inductive turnoff V GS = 1 V ; R GS = Ω energy February 1996 2 Rev 1.
BUK442A/B 12 11 1 9 8 7 6 4 3 2 1 PD% Normalised Power Derating 2 4 6 8 1 12 14 16 18 Tmb / C Fig.1. Normalised power dissipation. PD% = 1 P D /P D 2 C = f(t mb ) 1 1.1 Zth / (K/W) D =..2.1..2 BUKx4lv D = T T t.1 1E7 1E 1E3 1E1 1E+1 t / s Fig.4. Transient thermal impedance. Z th jmb = f(t); parameter D = t p /T P D tp tp 12 11 1 9 8 7 6 4 3 2 1 ID% Normalised Current Derating 2 4 6 8 1 12 14 16 18 Tmb / C Fig.2. Normalised continuous drain current. ID% = 1 I D /I D 2 C = f(t mb ); conditions: V GS 1 V 2 1 1 VGS / V = 2 BUK4442A 8 4 2 4 6 8 1 12 14 16 18 2 VDS / V Fig.. Typical output characteristics, T j = 2 C. I D = f(v DS ); parameter V GS 1 7 6 1 1 RDS(ON) = VDS/ID A B BUK442A,B tp = 1 us 1 us 1. 1. RDS(ON) / Ohm 4.. 6 6. 7 BUK442A VGS / V = 7. 8 1 DC 1 ms 1 ms 1 ms. 1 2.1 1 1 1 1 VDS / V Fig.3. Safe operating area. T mb = 2 C I D & I DM = f(v DS ); I DM single pulse; parameter t p 2 4 6 8 1 12 14 16 18 2 Fig.6. Typical onstate resistance, T j = 2 C. R DS(ON) = f(i D ); parameter V GS February 1996 3 Rev 1.
BUK442A/B 2 1 BUK442A Tj / C = 2 1 4 3 VGS(TO) / V max. typ. 1 2 min. 1 2 4 6 8 1 VGS / V Fig.7. Typical transfer characteristics. I D = f(v GS ) ; conditions: V DS = 2 V; parameter T j 6 2 2 6 1 14 18 Tj / C Fig.1. Gate threshold voltage. V GS(TO) = f(t j ); conditions: I D = 1 ma; V DS = V GS 6 gfs / S BUK442A 1E1 SUBTHRESHOLD CONDUCTION 1E2 4 1E3 2 % typ 98 % 3 2 1E4 1 1E 2 4 6 8 1 12 14 16 18 2 Fig.8. Typical transconductance, T j = 2 C. g fs = f(i D ); conditions: V DS = 2 V 1E6 1 2 3 4 VGS / V Fig.11. Subthreshold drain current. I D = f(v GS) ; conditions: T j = 2 C; V DS = V GS 2.8 2.6 2.4 2.2 2. 1.8 1.6 1.4 1.2 1..8.6.4.2 a Normalised RDS(ON) = f(tj) 6 2 2 6 1 14 18 Tj / C Fig.9. Normalised drainsource onstate resistance. a = R DS(ON) /R DS(ON)2 C = f(t j ); I D = 3. A; V GS = 1 V C / pf 1 1 1 1 2 4 VDS / V BUK4y42 Ciss Coss Crss Fig.12. Typical capacitances, C iss, C oss, C rss. C = f(v DS ); conditions: V GS = V; f = 1 MHz February 1996 4 Rev 1.
BUK442A/B 12 1 8 6 4 2 VGS / V VDS / V =4 BUK442 16 4 8 12 16 2 24 28 QG / nc Fig.13. Typical turnon gatecharge characteristics. V GS = f(q G ); conditions: I D = 9 A; parameter V DS 12 11 1 9 8 7 6 4 3 2 1 WDSS% 2 4 6 8 1 12 14 16 18 Tmb / C Fig.1. Normalised avalanche energy rating. W DSS % = f(t mb ); conditions: I D = 9 A 2 1 1 IF / A Tj / C = 1 BUK442A 1 2 VSDS / V Fig.14. Typical reverse diode current. I F = f(v SDS ); conditions: V GS = V; parameter T j 2 VGS L VDS T.U.T. RGS R 1 shunt + Fig.16. Avalanche energy test circuit. W DSS =. LI 2 D BV DSS /(BV DSS V DD ) VDD ID/1 February 1996 Rev 1.
BUK442A/B MECHANICAL DATA Dimensions in mm Net Mass: 2 g 4, max 1,3 max 3,7 1,3 2,8,9 min 1,8 max 3, max not tinned 1,3 max (2x) 1 2 3 2,4 2,4 3, 13, min,9 max (3x),6 2,4 Fig.17. TO22AB; pin 2 connected to mounting base. Notes 1. Observe the general handling precautions for electrostaticdischarge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for TO22 envelopes. 3. Epoxy meets UL94 V at 1/8". February 1996 6 Rev 1.
BUK442A/B DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1996 7 Rev 1.
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