Preferred Device General Purpose Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V CBO 6 Vdc Emitter Base Voltage V EBO 6. Vdc Collector Current Continuous I C 6 madc Total Device Dissipation @ T A = 25 C Derate above 25 C Total Device Dissipation @ T C = 25 C Derate above 25 C Operating and Storage Junction Temperature Range P D 625 P D 1.5 12 mw mw/ C W mw/ C T J, T stg 55 to +15 C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoAmbient Thermal Resistance, JunctiontoCase R JA 2 C/W R JC 83.3 C/W 1 2 3 2 BASE TO92 CASE 29 STYLE 1 1 EMITTER Y WW MARKING DIAGRAM 2N 441 YWW = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 24 June, 24 Rev. 1 1 Publication Order Number: 2N441/D
ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 1) (I C = 1. madc, I B = ) V (BR)CEO 4 Vdc CollectorBase Breakdown Voltage (I C =.1 madc, I E = ) EmitterBase Breakdown Voltage (I E =.1 madc, I C = ) Base Cutoff Current (V CE = 35 Vdc, V EB =.4 Vdc) Collector Cutoff Current (V CE = 35 Vdc, V EB =.4 Vdc) ON CHARACTERISTICS (Note 1) DC Current Gain (I C =.1 madc, V CE = 1. Vdc) (I C = 1. madc, V CE = 1. Vdc) (I C = madc, V CE = 1. Vdc) (I C = 15 madc, V CE = 1. Vdc) (I C = 5 madc, V CE = 2. Vdc) CollectorEmitter Saturation Voltage (I C = 15 madc, I B = 15 madc) CollectorEmitter Saturation Voltage (I C = 5 madc, I B = 5 madc) BaseEmitter Saturation Voltage (I C = 15 madc, I B = 15 madc) BaseEmitter Saturation Voltage (I C = 5 madc, I B = 5 madc) V (BR)CBO 6 Vdc V (BR)EBO 6. Vdc I BEV.1 Adc I CEX.1 Adc h FE 2 4 8 4 V CE(sat) V BE(sat).75 SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (I C = 2 madc, V CE = Vdc, f = MHz) f T 25 MHz CollectorBase Capacitance (V CB = Vdc, I E =, f = 1. MHz) C cb 6.5 pf EmitterBase Capacitance (V EB =.5 Vdc, I C =, f = 1. MHz) C eb 3 pf Input Impedance (I C = 1. madc, V CE = Vdc, f = 1. khz) h ie 1. 15 k ohms Voltage Feedback Ratio (I C = 1. madc, V CE = Vdc, f = 1. khz) h re.1 8. X 4 SmallSignal Current Gain (I C = 1. madc, V CE = Vdc, f = 1. khz) h fe 4 5 Output Admittance (I C = 1. madc, V CE = Vdc, f = 1. khz) h oe 1. 3 mhos SWITCHING CHARACTERISTICS Delay Time (V CC = 3 Vdc, V BE = 2. Vdc, t d 15 ns Rise Time I C = 15 madc, I B1 = 15 madc) t r 2 ns Storage Time (V CC = 3 Vdc, I C = 15 madc, t s 225 ns Fall Time I B1 = I B2 = 15 madc) t f 3 ns 1. Pulse Test: Pulse Width 3 s, Duty Cycle 2.%. 3.4.75.95 1.2 Vdc Vdc 2
ORDERING INFORMATION Device Package Shipping 2N441 TO92 5, Units / Box 2N441RLRA TO92 2, / Tape & Reel 2N441RLRAG TO92 (PbFree) 2, / Tape & Reel 2N441RLRM TO92 2, / Ammo Pack 2N441RLRP TO92 2, / Ammo Pack 2N441RLRPG TO92 (PbFree) 2, / Ammo Pack 2N441ZL1 TO92 2, / Ammo Pack For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. SWITCHING TIME EQUIVALENT TEST CIRCUITS +16 V 1. to s, DUTY CYCLE 2.% + 3 V 2 +16 V 1. to s, DUTY CYCLE 2.% + 3 V 2 2. V < 2. ns 1. k C S * < pf 14 V < 2 ns 1. k C S * < pf Scope rise time < 4. ns 4. V *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. TurnOn Time Figure 2. TurnOff Time TRANSIENT CHARACTERISTICS 25 C C CAPACITANCE (pf) 3 2 7. C obo Q, CHARGE (nc) 7. 3. 2. 1..7.5 V CC = 3 V I C /I B = Q T 3. C cb.3.2 Q A 2..1.2.3.5 1. 2. 3. 2 REVERSE VOLTAGE (VOLTS) 3 5.1 2 3 5 7 2 3 5 Figure 3. Capacitances Figure 4. Charge Data 3
ts, STORAGE TIME (ns) t, TIME (ns) 7 5 3 2 7. 2 3 5 7 2 3 5 3 2 7 5 Figure 5. TurnOn Time I C /I B = t r @ V CC = 3 V t r @ V CC = V 3 t d @ V EB = 2. V t d @ V EB = 2 t s = t s 1/8 t f I B1 = I B2 I C /I B = to 2 3 2 3 5 7 2 3 5 t, TIME (ns) tf, FALL TIME (ns) 7 5 7. 2 3 5 7 2 3 5 7 5 3 2 t f t r Figure 6. Rise and Fall Times I C /I B = I C /I B = 2 V CC = 3 V I C /I B = V CC = 3 V I B1 = I B2 7. 2 3 5 7 2 3 5 Figure 7. Storage Time Figure 8. Fall Time SMALLSIGNAL CHARACTERISTICS NOISE FIGURE V CE = Vdc, T A = 25 C; Bandwidth = 1. Hz NF, NOISE FIGURE (db) 8. 6. 4. 2. I C = 1. ma, R S = 15 I C = 5 A, R S = 2 I C = A, R S = 2. k I C = 5 A, R S = 4. k R S = OPTIMUM RS = SOURCE RS = RESISTANCE NF, NOISE FIGURE (db) 8. 6. 4. 2. f = 1. khz I C = 5 A I C = A I C = 5 A I C = 1. ma.1.2.5.1.2.5 1. 2. 2 5 f, FREQUENCY (khz) Figure 9. Frequency Effects 5 2 5 1. k 2. k k k 2 k 5 k R S, SOURCE RESISTANCE (OHMS) Figure. Source Resistance Effects k 4
h PARAMETERS V CE = Vdc, f = 1. khz, T A = 25 C This group of graphs illustrates the relationship between h fe and other h parameters for this series of transistors. To obtain these curves, a highgain and a lowgain unit were selected from the 2N441 lines, and the same units were used to develop the correspondingly numbered curves on each graph. hfe, CURRENT GAIN 3 2 7 5 3 2N441 UNIT 1 2N441 UNIT 2 h ie, INPUT IMPEDANCE (OHMS) 5 k 2 k k k 2. k 1. k 2N441 UNIT 1 2N441 UNIT 2 2.1.2.3.5.7 1. 2. 3. 7. 5.1.2.3.5.7 1. 2. 3. 7. Figure 11. Current Gain Figure 12. Input Impedance h, VOLTAGE FEEDBACK RATIO (X 4 re ) 7. 3. 2. 1..7.5.3 2N441 UNIT 1 2N441 UNIT 2.2.1.2.3.5.7 1. 2. 3. 7. h oe, OUTPUT ADMITTANCE ( mhos) 5 2 2. 1..1.2.3.5.7 1. 2. 3. 7. 2N441 UNIT 1 2N441 UNIT 2 Figure 13. Voltage Feedback Ratio Figure 14. Output Admittance 5
STATIC CHARACTERISTICS h FE, NORMALIZED CURRENT GAIN 3. 2. 1..7.5.3.2.1.2.3 V CE = 1. V V CE = V T J = 125 C 25 C 55 C.5.7 1. 2. 3. 7. 2 3 5 7 2 3 5 Figure 15. DC Current Gain V CE, COLLECTOREMITTER VOLTAGE (VOLTS) 1..8.6.4.2.1 I C = 1. ma.2.3.5.7 T J = 25 C ma ma 5 ma.1.2.3.5.7 1. 2. 3. 7. 2 3 5 I B, BASE CURRENT (ma) Figure 16. Collector Saturation Region 1..8 T J = 25 C V BE(sat) @ I C /I B = +.5 VC for V CE(sat) VOLTAGE (VOLTS).6.4 V BE @ V CE = V COEFFICIENT (mv/ C).5 1. 1.5.2 V CE(sat) @ I C /I B = 2. VB for V BE.1.2.5 1. 2. 2 5 2 5 2.5.1.2.5 1. 2. 2 5 2 5 Figure 17. On Voltages Figure 18. Temperature Coefficients 6
PACKAGE DIMENSIONS TO92 TO226AA CASE 2911 ISSUE AL A B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. R 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. P 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. L SEATING INCHES MILLIMETERS PLANE K DIM MIN MAX MIN MAX A.175.25 4.45 5.2 B.17.2 4.32 5.33 C.125.165 3.18 4.19 X X D D.16.21.47.533 G.45.55 1.15 1.39 G H.95.5 2.42 2.66 H J J.15.2.39.5 K.5 12.7 L.25 6.35 V C N.8.5 2.4 2.66 1 N P. 2.54 SECTION XX R.115 2.93 V.135 3.43 N STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR 7
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85821312 USA Phone: 4882977 or 8344386 Toll Free USA/Canada Fax: 48829779 or 83443867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 82829855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 291 Kamimeguro, Meguroku, Tokyo, Japan 15351 Phone: 8135773385 8 ON Semiconductor Website: Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. 2N441/D