9A HIGH-SPEED MOSFET DRIVERS

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9A HIGH-SPEED MOSFET DRIVERS 9A HIGH-SPEED MOSFET DRIVERS FEATURES Tough CMOS Construction High Peak Output Current.................. 9A High Continuous Output Current........ 2A Max Fast Rise and Fall Times: 3 ns with,7 pf Load 18 ns with 7, pf Load Short Internal Delays.............. 3nsec Typ Low Output Impedance............... 1.Ω Typ APPLICATIONS Line Drivers for Extra-Heavily-Loaded Lines Pulse Generators Driving the Largest MOSFETs and IGBTs Local Power ON/OFF Switch Motor and Solenoid Driver PIN CONFIGURATIONS -Pin TO-22 V DD Tab is Common to V DD 8-Pin Plastic DIP/CerDIP V DD 1 8 V DD NC 2 3 7 NOTE: Duplicate pins must both be connected for proper operation. NC = No connection GENERAL DESCRIPTION The /22 are high current buffer/drivers capable of driving large MOSFETs and IGBTs. They are essentially immune to any form of upset except direct overvoltage or over-dissipation they cannot be latched under any conditions within their power and voltage ratings; they are not subject to damage or improper operation when up to V of ground bounce is present on their ground terminals; they can accept, without either damage or logic upset, more than 1A inductive current of either polarity being forced back into their outputs. In addition, all terminals are fully protected against up to kv of electrostatic discharge. The /22 inputs may be driven directly from either TTL or CMOS (3V to 18V). In addition, 3 mv of hysteresis is built into the input, providing noise immunity and allowing the device to be driven from slowly rising or falling waveforms. ORDERING INFORMATION Part No. Package Temperature Range CAT -Pin TO-22 C to +7 C CPA 8-Pin PDIP C to +7 C EPA 8-Pin PDIP C to +8 C MJA 8-Pin CerDIP C to+12 C CAT -Pin TO-22 C to +7 C CPA 8-Pin PDIP C to +7 EPA 8-Pin PDIP C to +8 C MJA 8-Pin CerDIP C to+12 C FUNCTIONAL BLOCK DIAGRAM INVERTING V DD 3 mv NONINVERTING EFFECTIVE C 2 pf.7v / Inverting/Noninverting /2-7 -118/9 TelCom Semiconductor reserves the right ot make changes in the circuitry and specifications of its devices. 1

ABSOLUTE MAXIMUM RATINGS* Power Dissipation, T A 7 C PDIP................................. 73W CerDIP............................. 8mW -Pin TO-22.......................... 1.W Power Dissipation, T C 2 C -Pin TO-22 (With Heat Sink)............ 12.W Derating Factors (To Ambient) PDIP............................... 8mW/ C CerDIP............................mW/ C -Pin TO-22....................... 12mW/ C Thermal Impedance (To Case) -Pin TO-22 R ΘJ-C.................................... 1 C/W Storage Temperature............. C to +1 C Operating Temperature (Chip)............... 1 C Operating Temperature (Ambient) C Version....................... C to +7 C E Version.................... C to +8 C M Version................... C to +12 C Lead Temperature (1 sec).................. 3 C Supply Voltage............................. 2V Input Voltage............. (V DD +.3V) to ( - V) Input Current (V IN > V DD ).................... ma *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS T A = 2 C with.v V DD 18V unless otherwise specified. Symbol Parameter Test Conditions Min Typ Max Unit Input V IH Logic 1 Input Voltage 2. 1.8 V V IL Logic Input Voltage 1.3.8 V I IN Input Current V V IN V DD 1 1 µa Output V OH High Output Voltage See Figure 1 V DD.2 V V OL Low Output Voltage See Figure 1.2 V R O Output Resistance, High V DD = 18V, I O = 1 ma 1. Ω R O Output Resistance, Low V DD = 18V, I O = 1 ma.9 1.7 Ω I PK Peak Output Current V DD = 18V 9 A I DC Continuous Output Current 1V V DD 18V, T C = 2 2 A (/22 CAT only) I REV Latch-Up Protection Duty Cycle 2% >1 ma Withstand Reverse Current t 3 µs Switching Time (Note 1) t R Rise Time Figure 1, C L = 1, pf 7 nsec t F Fall Time Figure 1, C L = 1, pf 7 nsec t D1 Delay Time Figure 1 3 nsec t D2 Delay Time Figure 1 33 nsec Power Supply I S Power Supply Current V IN = 3V.2 1. ma V IN = V 1 µa V DD Operating Input Voltage. 18 V Input V IH Logic 1 Input Voltage 2. V V IL Logic Input Voltage.8 V I IN Input Current V V IN V DD 1 1 µa 2

ELECTRICAL CHARACTERISTICS (Measured over operating temperature range with.v V S 18V unless otherwise specified.) Symbol Parameter Test Conditions Min Typ Max Unit Input V IH Logic 1 Input Voltage 2. V V IL Logic Input Voltage.8 V I IN Input Current V V IN V DD 1 1 µa Output V OH High Output Voltage See Figure 1 V DD.2 V V OL Low Output Voltage See Figure 1.2 V R O Output Resistance, High V DD = 18V, I O = 1 ma 2. 3. W R O Output Resistance, Low V DD = 18V, I O = 1 ma 1.8 2.7 W Switching Time (Note 1) t R Rise Time Figure 1, C L = 1, pf 12 nsec t F Fall Time Figure 1, C L = 1, pf 12 nsec t D1 Delay Time Figure 1 8 nsec t D2 Delay Time Figure 1 8 nsec Power Supply I S Power Supply Current V IN = 3V. 3 ma V IN = V..2 ma V DD Operating Input Voltage. 18 V NOTE: 1. Switching times guaranteed by design. V DD = 18V.1 µf 1 8 +V 9%.1 µf.1 µf 2 V +18V 1% t D1 9% t F t D2 t R 9% 7 C = 1, pf L V 1% 1% : khz, square wave, t RISE = t FALL 1nsec Figure 1. Switching Time Test Circuit 3

TYPICAL CHARACTERISTICS t RISE (ns) t RISE (ns) Rise Time vs Supply Voltage 22 2 18 1 22, pf 1 12 1, pf 8 7 pf pf 2 8 1 12 1 1 18 3 2 2 1 V DD Rise TIme vs Capacitive Load 1V V 1V t FALL (ns) t FALL (ns) Fall Time vs Supply Voltage 18 1 1 22, pf 12 8 1, pf 7 pf 2 pf 8 1 12 1 1 18 V DD Fall TIme vs Capacitive Load 3 V 2 1V 2 1 1V 1,, C LOAD (pf) 1, C LOAD (pf), Rise and Fall Times vs Temperature Propagation Delay vs Supply Voltage 9 8 C LOAD = 1, pf V DD= 1V C LOAD= pf TIME (ns) 7 t RISE t FALL TIME (ns) 3 3 t D1 t D2 3 8 12 T A ( C) 2 8 1 12 1 1 18 V DD

TYPICAL CHARACTERISTICS (Cont.) I SUPPLY(mA) 22 2 18 1 1 12 8 2 Supply Current vs Capacitive Load (V DD= 18V) 2 MHz 1.12 MHz 32 khz 2 khz 1, C LOAD(pF), 3.2 khz 2 khz I SUPPLY(mA) 18 1 1 12 8 2 Supply Current vs Frequency (V DD= 18V).1 µf 7, pf 1, pf 22, pf 7 pf 7 pf 1 FREQUENCY (khz) I SUPPLY(mA) Supply Current vs Capacitive Load, Supply Current vs Frequency (V = 12) DD (V DD= 12) 18 18 22, pf 1 1 12 1 1 12 1, pf 7, pf 2 MHz 8 3.2 khz 8 1.12 MHz.1 µf 7 pf 32 khz 2 khz 2 2 khz 2 7 pf 1,, 1 C LOAD(pF) FREQUENCY (khz) I SUPPLY (ma) I SUPPLY (ma) 9 Supply Current vs Capacitive Load (V DD= V) 2 khz 8 7 3.2 khz 3 2 MHz 32 khz 2 1 2 khz 1,, C LOAD(pF) I SUPPLY (ma) 12 8 2 Supply Current vs Frequency (V DD= V).1 µf 7 pf 7, pf 22, pf 1, pf 7 pf 1 FREQUENCY (khz)

TYPICAL CHARACTERISTICS (Cont.) TIME (ns) Propagation Delay vs Input Amplitude 12 11 V DD = 1V C LOAD = V 9 8 7 t D2 3 t D1 2 1 1 2 3 7 8 9 1 (V) TIME (ns) 3 3 2 Propagation Delay vs Temperature t D2 t D1 2 2 2 8 12 T A( C) Crossover Energy vs Supply Voltage 1 1 3 Quiescent Supply Current vs Temperature V DD = 18V A sec 7 1 I QUIESCENT (µa) 1 2 = 1 = 1 8 8 1 12 1 1 18 V DD NOTE: The values on this graph represent the loss seen by the driver during a complete cycle. For the loss in a single transition, divide the stated value by 2. 2 2 8 12 T J ( C) R DS(ON) ( Ω ) High-State Output Resistance vs Supply Voltage.. T J = 1 C 3. 3 2. 2 T J = 2 C 1. 1. 8 1 12 1 1 18 V DD(V) R DS(ON) ( Ω ).. 3. 3 2. 2 1. 1 Low-State Output Resistance vs Supply Voltage T J = 1 C T J = 2 C. 8 1 12 1 1 18 V DD(V)

PACKAGE DIMENSIONS 8-Pin Plastic DIP PIN 1.2 (.).2 (.1). (1.1).3 (.7). (1.1).38 (8.8).7 (1.78). (1.1).31 (7.87).29 (7.37).2 (.8).1 (3.).1 (3.81).11 (2.92). (1.2).2 (.1).1 (.38).8 (.2) 3 MIN..11 (2.79).9 (2.29).22 (.).1 (.38). (1.1).31 (7.87) 8-Pin CerDIP.11 (2.79).9 (2.29) PIN 1.3 (7.2).23 (.8). (1.) MAX..2 (.1) MIN.. (1.1).37 (9.).32 (8.13).29 (7.37).2 (.8).1 (.). (1.2).2 (.1).2 (.8).12 (3.18).1 (3.81) MIN..1 (.38).8 (.2) 3 MIN..(1.). (1.1).2 (.1).1 (.1). (1.1).32 (8.13) Dimensions: inches (mm) 7

PACKAGE DIMENSIONS (Cont.) -Pin TO-22.18 (.7).1 (.19).28 (.).23 (.8).113 (2.87).13 (2.2).1 (1.1).39 (9.91).1 (3.9).1 (3.71) DIA.. (1.). (1.1).9 (1.9).9 (1.) 3-7. PLCS.. (1.22).18 (13.1).37 (.9).27 (.9).2 (.1).12 (.3).273 (.93).23 (.8).72 (1.83).2 (1.7).11 (2.92).9 (2.1) Dimensions: inches (mm) Sales Offices TelCom Semiconductor 13 Terra Bella Avenue P.O. Box 727 Mountain View, CA 939-727 TEL: 1-98-921 FAX: 1-97-19 E-Mail: liter@c2smtp.telcom-semi.com TelCom Semiconductor Austin Product Center 911 Burnet Rd. Suite 21 Austin, TX 7878 TEL: 12-873-7 FAX: 12-873-823 TelCom Semiconductor H.K. Ltd. 1 Sam Chuk Street, Ground Floor San Po Kong, Kowloon Hong Kong TEL: 82-232-122 FAX: 82-23-997 8 Printed in the U.S.A.

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