N MITSBISHI TELLIGENT POER MODLES PM5RSA6 AB Q Z A B Z R S M M AE B P 1234 5678 9 11 13 15 17 19 1 12 14 16 18 AB (15 TYP.) X - DIA. (4 TYP.) Y - THD (6 TYP.) V F E C 1. VPC 2. FO 3. P 4. VPI 5. VVPC 6. VFO 7. VP 8. VVPI 9. VPC 1. FO 11. P 12. VPI 13. VNC 14. VNI 15. BR 16. N 17. VN 18. N 19. FO G H N AC AE Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.29±.4 19.±1. B 3.74±.2 95.±.5 C 3.46±.4 88.±1. D 3.19 81. E 2.91±.2 74.±.5 F 2.36 6. G 1.28 32.6 H 1.24 31.6 J 1.2 26. K.94 24. L.87 +.6/- 22. +1.5/-. M.79 2. N.76 19.4 P.75 19. V V NC Q.67 17.2 R.78 17.98 K V NI VN J D J AD P 2.54 MM DIA. (2 TYP.).5 MM SQ. P (19 TYP.) N FO BR B TEMP N N V PC P L FO V PI V VPC V VP V FO SI V VPI V PC P FO V PI AA Dimensions Inches Millimeters S.67 17. T.52 13.2.39 1. V.31 8..3 7. X.22 Dia. Dia. 5.5 Y Metric M5 M5 Z.127 3.22 AA.1 2.6 AB.8 2. AC.7 1.8 AD.6 1.6 P AE.2±.1.5±.3 T Description: Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 2kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel diode power devices. Features: Complete Output Power Circuit Gate Drive Circuit Protection Logic Short Circuit Over Current Over Temperature nder Voltage Applications: Inverters PS Motion/Servo Control Power Supplies Ordering Information: Example: Select the complete part number from the table below -i.e. PM5RSA6 is a 6V, 5 Ampere Intelligent Power Module. Type Current Rating V CES Amperes Volts (x 1) PM 5 6
MITSBISHI TELLIGENT POER MODLES PM5RSA6 Absolute Maximum Ratings, T j = 25 C unless otherwise specified Ratings Symbol PM5RSA6 nits Power Device Junction Temperature T j -4 to 125 C Storage Temperature T stg -4 to 125 C Case Operating Temperature T C -2 to 1 C Mounting Torque, M5 Mounting Screws 1.47 ~ 1.96 N m Mounting Torque, M5 Main Terminal Screw 1.47 ~ 1.96 N m Module eight (Typical) 55 Grams Supply Voltage Protected by OC and SC (V D = 13.5-16.5V, Inverter Part, T j = 125 C) (prot.) 4 Volts Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 25 Vrms Control Sector Supply Voltage (Applied between V P1 -V PC, V VP1 -V VPC, V P1 -V PC, V N1 -V NC ) V D 2 Volts Input Voltage (Applied between P -V PC, V P -V VPC, P -V PC, N V N N B r -V NC ) V C 2 Volts Fault Output Supply Voltage (Applied between FO -V PC, V FO -V VPC, FO -V PC, -V NC ) V FO 2 Volts Fault Output Current (Sink Current of FO, V FO, FO and Terminal) I FO 2 ma IGBT Inverter Sector Collector-Emitter Voltage (, V C = 15V) V CES 6 Volts Collector Current, ± I C 5 Amperes Peak Collector Current, ± I CP 1 Amperes Supply Voltage (Applied between P - N) 45 Volts Supply Voltage, Surge (Applied between P - N) (surge) 5 Volts Collector Dissipation P C 138 atts Brake Sector Collector-Emitter Voltage (, V C = 15V) V CES 6 Volts Collector Current, (T C = 25 C) I C 15 Amperes Peak Collector Current, (T C = 25 C) I CP 3 Amperes Supply Voltage (Applied between P - N) 45 Volts Supply Voltage, Surge (Applied between P - N) (surge) 5 Volts Collector Dissipation P C 52 atts Diode Forward Current I F 15 Amperes Diode DC Reverse Voltage V R(DC) 6 Volts
MITSBISHI TELLIGENT POER MODLES PM5RSA6 Electrical and Mechanical Characteristics, T j = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. nits Control Sector Over Current Trip Level Inverter Part OC -2 C T 125 C, 65 88 Amperes Over Current Trip Level Brake Part 18 26 Amperes Short Circuit Trip Level Inverter Part SC -2 C T 125 C, 132 Amperes Short Circuit Trip Level Brake Part 39 Amperes Over Current Delay Time t off(oc) 1 µs Over Temperature Protection OT Trip Level 111 118 125 C OT r Reset Level 1 C Supply Circuit nder Voltage Protection V Trip Level 11.5 12. 12.5 Volts V r Reset Level 12.5 Volts Supply Voltage V D Applied between V P1 -V PC, 13.5 15 16.5 Volts V VP1 -V VPC, V P1 -V PC, V N1 -V NC Circuit Current I D, V C = 15V, V N1 -V NC 44 6 ma, V C = 15V, V XP1 -V XPC 13 18 ma Input ON Threshold Voltage V th(on) Applied between 1.2 1.5 1.8 Volts Input OFF Threshold Voltage V th(off) P -V PC, V P -V VPC, P -V PC, 1.7 2. 2.3 Volts N V N N B r -V NC PM Input Frequency f PM 3-φ Sinusoidal 15 2 khz Fault Output Current I FO(H), V FO = 15V.1 ma I FO(L), V FO = 15V 1 15 ma Minimum Fault Output Pulse idth t FO 1. 1.8 ms
MITSBISHI TELLIGENT POER MODLES PM5RSA6 Electrical and Mechanical Characteristics, T j = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. nits IGBT Inverter Sector Collector Cutoff Current I CES V CE = V CES, T j = 25 C 1 ma V CE = V CES, T j = 125 C 1 ma Diode Forward Voltage V EC -I C = 5A,, V C = 15V 2.2 3.3 Volts Collector-Emitter Saturation Voltage V CE(sat), V C = V, I C = 5A,T j = 25 C 1.8 2.7 Volts, V C = V, I C = 5A, 1.85 2.78 Volts T j = 125 C Inductive Load Switching Times t on.4.8 2. µs t rr, V C = 15V.15.3 µs t C(on) = 3V, I C = 5A.4 1. µs t off T j = 125 C 2. 2.9 µs t C(off).5 1. µs Brake Sector Collector-Emitter Saturation Voltage V CE(sat), V C = V, I C = 15A, 2.6 3.5 Volts T j = 25 C, V C = V, I C = 15A, 3. 4. Volts T j = 125 C Diode Forward Voltage V FM I F = 15A,, V C = 15V 1.7 2.2 Volts Collector Cutoff Current I CES V CE = V CES, T j = 25 C 1 ma V CE = V CES, T j = 125 C 1 ma
MITSBISHI TELLIGENT POER MODLES PM5RSA6 Thermal Characteristics Characteristic Symbol Condition Min. Typ. Max. nits Junction to Case Thermal Resistance R th(j-c)q Each Inverter IGBT.9 C/att R th(j-c)f Each Inverter FDi 2.5 C/att R th(c-f)q Each Brake IGBT 2.4 C/att R th(c-f)f Each Brake FDi 4.5 C/att Contact Thermal Resistance R th(c-f) Case to Fin Per Module,.27 C/att Thermal Grease Applied Recommended Conditions for se Characteristic Symbol Condition Value nits Supply Voltage Applied across P-N Terminals ~ 4 Volts V D Applied between V P1 -V PC, 15 ± 1.5 Volts V N1 -V NC, V VP1 -V VPC, V P1 -V PC Input ON Voltage V C(on) Applied between ~.8 Volts Input OFF Voltage V C(off) P -V PC, V P -V VPC, P -V PC, 4. ~ V D Volts N V N N B r -V NC PM Input Frequency f PM sing Application Circuit 5 ~ 2 khz Minimum Dead Time t dead Input Signal 2 µs
MITSBISHI TELLIGENT POER MODLES PM5RSA6 Inverter Part SATRATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATRATION VOLTAGE CHARACTERISTICS (TYPICAL) PT CHARACTERISTICS (TYPICAL) SATRATION VOLTAGE V CE(sat), (VOLTS) 3. 2.5 2. 1.5 1..5 V C = V 1 2 3 4 5 COLLECTOR CRRENT, I C, (AMPERES) COLLECTOR-EMITTER SATRATION VOLTAGE V CE(sat), (VOLTS) 3. 2.5 2. 1.5 1..5 I C = 5A V C = V 12 14 16 18 2 SPPLY VOLTAGE, V D, (VOLTS) COLLECTOR CRRENT, I C, (AMPERES) 6 5 4 3 2 1 V C = V V D = 17V 15 13.5 1. 1.5 2. COLLECTOR-EMITTER VOLTAGE, V CE, (VOLTS) SITCHG TIMES, t on, t off, (µs) 1 1 SITCHG TIME VS. COLLECTOR CRRENT (TYPICAL) = 3V Inductive Load t off t on 1-1 1 1 1 2 COLLECTOR CRRENT, I C, (AMPERES) DIODE FORARD CHARACTERISTICS SITCHG TIMES, t c(on), t c(off), (µs) 1-1 SITCHG TIME VS. COLLECTOR CRRENT (TYPICAL) t c(off) t c(on) = 3V Inductive Load 1-2 1 1 1 2 COLLECTOR CRRENT, I C, (AMPERES) OVER CRRENT TRIP LEVEL VS. SPPLY VOLTAGE (TYPICAL) REVERSE RECOVERY TIME, t rr, (µs) 1-1 REVERSE RECOVERY CRRENT VS. COLLECTOR CRRENT (TYPICAL) = 3V Inductive Load 1-2 1 1 1 2 COLLECTOR REVERSE CRRENT, -I C, (AMPERES) OVER CRRENT TRIP LEVEL VS. TEMPERATRE (TYPICAL) I rr t rr 1 2 1 1 REVERSE RECOVERY CRRENT, I rr, (AMPERES) COLLECTOR REVERSE CRRENT, -I C, (AMPERES) 1 2 1 1 V C = 15V OVER CRRENT TRIP LEVEL % (NORMALIZED) 14 12 1 8 6.5 1. 1.5 2. 2.5 12 14 16 18 2 EMITTER-COLLECTOR VOLTAGE, V EC, (VOLTS) SPPLY VOLTAGE, V D, (VOLTS) OVER CRRENT TRIP LEVEL % (NORMALIZED) 14 12 1 8 6-5 5 1 15 JNCTION TEMPERATRE, T j, ( o C)
MITSBISHI TELLIGENT POER MODLES PM5RSA6 Inverter Part FALT PT PLSE IDTH VS. TEMPERATRE (TYPICAL) CONTROL SPPLY VOLTAGE TRIP-RESET LEVEL TEMPERATRE DEPENDENCY (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each IGBT) FALT PT PLSE IDTH % (NORMALIZED) 14 12 1 8 6-5 5 1 15 JNCTION TEMPERATRE, T j, ( o C) V TRIP-RESET LEVEL, V t, V r, (VOLTS) 15 14 13 12 11 TRIP RESET -5 5 1 15 JNCTION TEMPERATRE, T C ( o C) TRANSIENT IMPEDANCE, Z th(j-c), (NORMALIZED VALE) 1 1 1-1 1-2 1-3 1-3 SGLE PLSE STANDARD VALE = R th(j-c)q =.9 o C/ 1-2 1-1 1 1 TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each FDi) TRANSIENT IMPEDANCE, Z th(j-c), (NORMALIZED VALE) 1 1 1-1 1-2 1-3 1-3 SGLE PLSE STANDARD VALE = R th(j-c)f = 2.5 o C/ 1-2 1-1 1 1 TIME, (s)
MITSBISHI TELLIGENT POER MODLES PM5RSA6 Brake Part SATRATION VOLTAGE V CE(sat), (VOLTS) DIODE FORARD CRRENT, I F, (AMPERES) 3. 2.5 2. 1.5 SATRATION VOLTAGE CHARACTERISTICS (TYPICAL) 1. V C = V.5 4 8 12 16 2 COLLECTOR CRRENT, I C, (AMPERES) 1 2 1 1 REVERSE COLLECTOR CRRENT VS. EMITTER-COLLECTOR VOLTAGE V C = 15V.4.8 1.2 1.6 2. EMITTER-COLLECTOR VOLTAGE, V EC, (VOLTS) COLLECTOR-EMITTER SATRATION VOLTAGE V CE(sat), (VOLTS) TRANSIENT IMPEDANCE, Z th(j-c), (NORMALIZED VALE) 3. 2.5 2. 1.5 1. COLLECTOR-EMITTER SATRATION VOLTAGE CHARACTERISTICS (TYPICAL) V C = V.5 I C = 6A I C = 15A 12 14 16 18 2 SPPLY VOLTAGE, V D, (VOLTS) 1 1 1-1 1-2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each IGBT) SGLE PLSE STANDARD VALE = R th(j-c)q = 2.4 o C/ COLLECTOR CRRENT, I C, (AMPERES) 16 12 8 4 V C = V PT CHARACTERISTICS (TYPICAL) 15 V D = 17V 13 1 2 3 4 COLLECTOR-EMITTER VOLTAGE, V CE, (VOLTS) 1-3 1-3 1-3 1-2 1-1 1 1 1-3 1-2 1-1 1 1 TIME, (s) TIME, (s) TRANSIENT IMPEDANCE, Z th(j-c), (NORMALIZED VALE) 1 1 1-1 1-2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each FDi) SGLE PLSE STANDARD VALE = R th(j-c)f = 4.5 o C/