Industrial Inductive Load Driver This microintegrated part provides a single component solution to switch inductive loads such as relays, solenoids, and small DC motors without the need of a freewheeling diode. It accepts logic level inputs, thus allowing it to be driven by a large variety of devices including logic gates, inverters, and microcontrollers. Features Provides Robust Interface between D.C. Relay Coils and Sensitive Logic Capable of Driving Relay Coils Rated up to 1 ma at 12 V, 24 V or 48 V Replaces 3 or 4 Discrete Components for Lower Cost Internal Zener Eliminates Need for FreeWheeling Diode Meets Load Dump and other Automotive Specs SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ1 Qualified and PPAP Capable These are PbFree Devices Typical Applications Automotive and Industrial Environment Drives Window, Latch, Door, and Antenna Relays Benefits Reduced PCB Space Standardized Driver for Wide Range of Relays Simplifies Circuit Design and PCB Layout Compliance with Automotive Specifications 1 6 2 1 3 SOT23 CASE 318 STYLE 21 MARKING DIAGRAMS JW8 M JW8 = Specific Device Code M = Date Code = PbFree Package (Note: Microdot may be in either location) SC74 CASE 318F STYLE 7 JW8 M JW8 = Specific Device Code M = Date Code = PbFree Package (Note: Microdot may be in either location) Device Package Shipping NUD3160LT1G SZNUD3160LT1G NUD3160DMT1G SZNUD3160DMT1G ORDERING INFORMATION SOT23 (PbFree) SOT23 (PbFree) SC74 (PbFree) SC74 (PbFree) 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Drain (3) Drain (6) Drain (3) Gate (1) k Gate (2) k k Gate (5) 0 k 0 k 0 k Source (2) Source (1) Source (4) CASE 318 CASE 318F Figure 1. Internal Circuit Diagrams Semiconductor Components Industries, LLC, 2003 October, 2016 Rev. 7 1 Publication Order Number: NUD3160/D
MAXIMUM RATINGS (T J = 25 C unless otherwise specified) Symbol Rating Value Unit V DSS DraintoSource Voltage Continuous (T J = 125 C) 60 V V GSS GatetoSource Voltage Continuous (T J = 125 C) 12 V I D Drain Current Continuous (T J = 125 C) Minimum copper, double sided board, T A = 80 C SOT23 SC74 Single device driven SC74 Both devices driven 1 in 2 copper, double sided board, T A = 25 C SOT23 SC74 Single device driven SC74 Both devices driven 158 157 132 ea 272 263 230 ea ma E Z Single Pulse DraintoSource Avalanche Energy (For Relay s Coils/Inductive Loads of 80 or Higher) (T J Initial = 85 C) 200 mj P PK Peak Power Dissipation, DraintoSource (Notes 1 and 2) (T J Initial = 85 C) E LD1 Load Dump Pulse, DraintoSource (Note 3) R SOURCE = 0.5, T = 300 ms) (For Relay s Coils/Inductive Loads of 80 or Higher) (T J Initial = 85 C) 20 W 60 V E LD2 E LD3 RevBat Inductive Switching Transient 1, DraintoSource (Waveform: R SOURCE =, T = 2.0 ms) (For Relay s Coils/Inductive Loads of 80 or Higher) (T J Initial = 85 C) Inductive Switching Transient 2, DraintoSource (Waveform: R SOURCE = 4.0, T = s) (For Relay s Coils/Inductive Loads of 80 or Higher) (T J Initial = 85 C) Reverse Battery, Minutes (DraintoSource) (For Relay s Coils/Inductive Loads of 80 or more) 0 V 300 V 14 V DualVolt Dual Voltage Jump Start, Minutes (DraintoSource) 28 V ESD Human Body Model (HBM) According to EIA/JESD22/A114 Specification 2000 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2
THERMAL CHARACTERISTICS Symbol Rating Value Unit T A Operating Ambient Temperature 40 to 125 C T J Maximum Junction Temperature 1 C T STG Storage Temperature Range 65 to 1 C P D Total Power Dissipation (Note 4) SOT23 Derating above 25 C P D Total Power Dissipation (Note 4) SC74 Derating above 25 C R JA Thermal Resistance, Junction to Ambient Minimum Copper SOT23 SC74 One Device Powered SC74 Both Devices Equally Powered 225 1.8 380 3.0 556 556 398 mw mw/ C mw mw/ C C/W 300 mm 2 Copper SOT23 SC74 One Device Powered SC74 Both Devices Equally Powered 1. Nonrepetitive current square pulse ms duration. 2. For different square pulse durations, see Figure 12. 3. Nonrepetitive load dump pulse per Figure 3. 4. Mounted onto minimum pad board. 395 420 270 3
ELECTRICAL CHARACTERISTICS (T J = 25 C unless otherwise specified) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain to Source Sustaining Voltage (I D = ma) V BRDSS 61 66 70 V Drain to Source Leakage Current (V DS = 12 V, V GS = 0 V) (V DS = 12 V, V GS = 0 V, T J = 125 C) (V DS = 60 V, V GS = 0 V) (V DS = 60 V, V GS = 0 V, T J = 125 C) I DSS 0.5 80 A Gate Body Leakage Current (V GS = 3.0 V, V DS = 0 V) (V GS = 3.0 V, V DS = 0 V, T J = 125 C) (V GS = 5.0 V, V DS = 0 V) (V GS = 5.0 V, V DS = 0 V, T J = 125 C) I GSS 60 80 90 1 A ON CHARACTERISTICS Gate Threshold Voltage (V GS = V DS, I D = ma) (V GS = V DS, I D = ma, T J = 125 C) Drain to Source OnResistance (I D = 1 ma, V GS = 3.0 V) (I D = 1 ma, V GS = 3.0 V, T J = 125 C) (I D = 1 ma, V GS = 5.0 V) (I D = 1 ma, V GS = 5.0 V, T J = 125 C) Output Continuous Current (V DS = 0.3 V, V GS = 5.0 V) (V DS = 0.3 V, V GS = 5.0 V, T J = 125 C) Forward Transconductance (V DS = 12 V, I D = 1 ma) DYNAMIC CHARACTERISTICS Input Capacitance (V DS = 12 V, V GS = 0 V, f = khz) Output Capacitance (V DS = 12 V, V GS = 0 V, f = khz) Transfer Capacitance (V DS = 12 V, V GS = 0 V, f = khz) V GS(th) 1.3 1.3 R DS(on) I DS(on) 1 0 1.8 200 2.0 2.0 2.4 3.7 1.8 2.9 V ma g FS 400 mmho C iss 30 pf C oss 14 pf C rss 6.0 pf SWITCHING CHARACTERISTICS Propagation Delay Times: High to Low Propagation Delay; Figure 2, (V DS = 12 V, V GS = 3.0 V) Low to High Propagation Delay; Figure 2, (V DS = 12 V, V GS = 3.0 V) High to Low Propagation Delay; Figure 2, (V DS = 12 V, V GS = 5.0 V) Low to High Propagation Delay; Figure 2, (V DS = 12 V, V GS = 5.0 V) Transition Times: Fall Time; Figure 2, (V DS = 12 V, V GS = 3.0 V) Rise Time; Figure 2, (V DS = 12 V, V GS = 3.0 V) Fall Time; Figure 2, (V DS = 12 V, V GS = 5.0 V) Rise Time; Figure 2, (V DS = 12 V, V GS = 5.0 V) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. t PHL t PLH t PHL t PLH t f t r t f t r 918 798 331 1160 2290 618 622 600 ns ns 4
TYPICAL WAVEFORMS (T J = 25 C unless otherwise specified) V IH V in % 0 V t PHL t PLH V out 90% % % V OH V OL t f t r Figure 2. Switching Waveforms t r Load Dump Pulse Not Suppressed: V r = 13.5 V Nominal ±% V S = 60 V Nominal ±% T = 300 ms Nominal ±% t r = 1 ms ±% 90% % of Peak; Reference = V r, I r V S V r, I r % T Figure 3. Load Dump Waveform Definition 5
TYPICAL PERFORMANCE CURVES (T J = 25 C unless otherwise specified) I DSS, DRAIN LEAKAGE ( A) 80 70 60 40 30 20 V DS = 60 V I GSS GATE LEAKAGE ( A) 80 70 60 40 30 V GS = 5 V V GS = 3 V 0 25 0 25 75 T J, JUNCTION TEMPERATURE ( C) Figure 4. DraintoSource Leakage vs. Junction Temperature 20 0 125 25 0 25 75 0 125 T J, JUNCTION TEMPERATURE ( C) Figure 5. GatetoSource Leakage vs. Junction Temperature BV DSS BREAKDOWN VOLTAGE (V) I D DRAIN CURRENT (ma) 66.4 66.2 66.0 65.8 65.6 65.4 65.2 65.0 64.8 1 0.1 0.01 0.001 1E04 1E05 1E06 1E07 25 0 I D = ma 25 75 0 T J, JUNCTION TEMPERATURE ( C) Figure 6. Breakdown Voltage vs. Junction Temperature V DS = 0.8 V 125 C 85 C 25 C 40 C 1.2 1.4 1.6 1.8 2.0 2.2 2.4 V GS, GATETOSOURCE VOLTAGE (V) Figure 8. Transfer Function 125 I D DRAIN CURRENT (ma) 2.6 R DS(ON), DRAINTOSOURCE RESISTANCE (m ) 1E+03 1E+02 1E+01 1E+00 1E01 1E02 1E03 0.0 3200 2800 2400 2000 1600 1200 800 V GS = 5 V V GS = 3 V 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 I D = 0.15 A V DS, DRAINTOSOURCE VOLTAGE (V) 25 Figure 7. Output Characteristics V GS = 3.0 V V GS = 5.0 V 0 25 75 T J, JUNCTION TEMPERATURE ( C) Figure 9. On Resistance Variation vs Junction Temperature V GS = 2.5 V V GS = 2 V V GS = 1.5 V 0 125 6
TYPICAL PERFORMANCE CURVES (T J = 25 C unless otherwise specified) R DS(ON), DRAINTOSOURCE RESISTANCE (m ) 0 90 80 70 60 40 30 20 0 125 C 85 C 1.2 1.4 1.6 1.8 25 C 40 C 2.0 2.2 2.4 I D = 2 A 2.6 2.8 3.0 V Z ZENER CLAMP VOLTAGE (V) 68.0 67.5 67.0 66.5 66.0 65.5 65.0 64.5 64.0 63.5 63.0 62.5 62.0 0.1 40 C 25 C 85 C 125 C 0 00 V GS, GATETOSOURCE VOLTAGE (V) Figure. On Resistance Variation vs. GatetoSource Voltage I Z, ZENER CURRENT (ma) Figure 11. Zener Clamp Voltage vs. Zener Current 0 600 SC741 (One Device Powered) 0 SC742 (Both Devices Powered Equally) POWER (WATTS) JA ( C/W) 400 300 SC741 SOT23 SC742 1 0.1 0 1 oz. Copper, Singlesided Board 200 0 0 200 300 400 0 600 700 P W, PULSE WIDTH (ms) Figure 12. Maximum Nonrepetitive Surge Power vs. Pulse Width COPPER AREA (mm 2 ) Figure 13. Thermal Performance vs. Board Copper Area 7
APPLICATIONS INFORMATION 12 V Battery + NC NO Drain (3) Relay, Vibrator, or Inductive Load Micro Processor Signal for Relay Gate (1) 0 K k NUD3160 Source (2) Figure 14. Applications Diagram 8
PACKAGE DIMENSIONS SOT23 (TO236) CASE 31808 ISSUE AR A E A1 D 3 1 2 e TOP VIEW SIDE VIEW HE L 3X b L1 VIEW C SEE VIEW C c END VIEW T 0.25 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A 0.89 0 1.11 0.035 0.039 0.044 A1 0.01 0.06 0. 0.000 0.002 0.004 b 0.37 0.44 0. 0.015 0.017 0.020 c 0.08 0.14 0.20 0.003 0.006 0.008 D 2.80 2.90 3.04 0.1 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.080 L 0.30 0.43 0.55 0.012 0.017 0.022 L1 0.35 0.54 0.69 0.014 0.021 0.027 H E 2. 2.40 2.64 0.083 0.094 0.4 T 0 0 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN RECOMMENDED SOLDERING FOOTPRINT* 2.90 3X 0.90 3X 0.80 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 9
PACKAGE DIMENSIONS SC74 CASE 318F05 ISSUE N 0.05 (0.002) 6 H E 1 e A1 D 5 4 2 3 b E A L C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318F01, 02, 03, 04 OBSOLETE. NEW STANDARD 318F05. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A 0.90 0 1. 0.035 0.039 0.043 A1 0.01 0.06 0. 0.001 0.002 0.004 b 0.25 0.37 0. 0.0 0.015 0.020 c 0. 0.18 0.26 0.004 0.007 0.0 D 2.90 3.00 3. 0.114 0.118 0.122 E 1.30 1. 1.70 0.051 0.059 0.067 e 0.85 0.95 5 0.034 0.037 0.041 L 0.20 0.40 0.60 0.008 0.016 0.024 H E 2. 2.75 3.00 0.099 0.8 0.118 0 0 STYLE 7: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 SOLDERING FOOTPRINT* 2.4 0.094 0.7 0.028 1.9 0.074 0.95 0.037 0.95 0.037 0.039 SCALE :1 mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patentmarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 3036752175 or 8003443860 Toll Free USA/Canada Fax: 3036752176 or 8003443867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8002829855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 29 Japan Customer Focus Center Phone: 8135817 ON Semiconductor Website: Order Literature: http:///orderlit For additional information, please contact your local Sales Representative NUD3160/D