Advance Technical Information X3-Class HiPerFET TM Power MOSFET IXFT5N3X3HV IXFH5N3X3 IXFK5N3X3 V SS I 25 R S(on) = 3V = 5A 8.3m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V SS = 25 C to 5 C 3 V V GR = 25 C to 5 C, R GS = M 3 V S Continuous 2 V M Transient 3 V I 25 = 25 C 5 A I M = 25 C, Pulse Width Limited by M 4 A I A = 25 C 75 A E AS = 25 C 2 J dv/dt I S I M, V V SS, 5 C 2 V/ns P = 25 C 89 W -55... +5 C M 5 C T stg -55... +5 C T L Maximum Lead Temperature for Soldering 3 C T SOL.6 mm (.62in.) from Case for s 26 C M d Mounting Torque (TO-247 & TO-264).3 / Nm/lb.in Weight TO-268HV 4 g TO-247 6 g TO-264 g TO-268HV (IXFT) Features G TO-247 (IXFH) G S TO-264 (IXFK) G S S (Tab) (Tab) (Tab) G = Gate = rain S = Source Tab = rain International Standard Packages Low R S(ON) and Q G Avalanche Rated Low Package Inductance Symbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise Specified) Min. Typ. Max. BV SS = V, I = ma 3 V (th) V S =, I = 4mA 2.5 4.5 V I GSS = 2V, V S = V na I SS V S = V SS, = V 25 A = 25 C ma R S(on) = V, I =.5 I 25, Note 6.6 8.3 m Advantages High Power ensity Easy to Mount Space Savings Applications Switch-Mode and Resonant-Mode Power Supplies C-C Converters PFC Circuits AC and C Motor rives Robotics and Servo Controls 27 IXYS CORPORATION, All Rights Reserved S863A(/7)
Symbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise Specified) Min. Typ. Max g fs V S = V, I = 6A, Note 7 2 S R Gi Gate Input Resistance.2 C iss 3. nf C oss = V, V S = 25V, f = MHz 2. nf C rss.7 pf Effective Output Capacitance C o(er) Energy related V 7 pf GS = V C o(tr) Time related V 27 pf S =.8 V SS t d(on) 4 ns Resistive Switching Times t r 32 ns = V, V S =.5 V SS, I =.5 I 25 t d(off) 87 ns R G = 5 (External) t f 4 ns Q g(on) 254 nc Q gs = V, V S =.5 V SS, I =.5 I 25 6 nc Q gd 56 nc R thjc.4 C/W R thcs TO-247.2 C/W TO-264.5 C/W IXFT5N3X3HV IXFH5N3X3 IXFK5N3X3 Source-rain iode Symbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise Specified) Min. Typ. Max I S = V 5 A I SM Repetitive, pulse Width Limited by M 6 A V S I F = I S, = V, Note.4 V t rr I 67 ns F = 75A, -di/dt = A/μs Q RM nc V I R = V RM 3 A Note. Pulse test, t 3 s, duty cycle, d 2%. AVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and imensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,93,844 5,49,96 5,237,48 6,62,665 6,44,65B 6,683,344 6,727,585 7,5,734B2 7,57,338B2 by one or more of the following U.S. patents: 4,86,72 5,7,58 5,63,37 5,38,25 6,259,23B 6,534,343 6,7,45B2 6,759,692 7,63,975B2 4,88,6 5,34,796 5,87,7 5,486,75 6,36,728B 6,583,55 6,7,463 6,77,478B2 7,7,537
IXFT5N3X3HV IXFH5N3X3 IXFK5N3X3 Fig.. Output Characteristics @ = 25 o C Fig. 2. Extended Output Characteristics @ = 25 o C 6 4 = V 9V 8V 7 6 = V 2 7V 5 9V 8 6 6V 4 3 8V 7V 4 2 5V.2.4.6.8.2.4 2 6V 5V 5 5 2 25 6 4 2 8 6 4 Fig. 3. Output Characteristics @ = 25 o C = V 8V 2 4V.5.5 2 2.5 3 7V 6V 5V RS(on) - Normalized 2.6 2.2.8.4..6 Fig. 4. R S(on) Normalized to I = 75A Value vs. Junction Temperature = V I = 5A I = 75A.2-5 -25 25 5 75 25 5 - egrees Centigrade 4. Fig. 5. R S(on) Normalized to I = 75A Value vs. rain Current.3 Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 3.5 = V.2 RS(on) - Normalized 3. 2.5 2..5 = 25 o C = 25 o C BVSS / VGS(th) - Normalized...9.8 BV SS..7 (th).5 2 3 4 5 6 7 I - Amperes.6-6 -4-2 2 4 6 8 2 4 6 - egrees Centigrade 27 IXYS CORPORATION, All Rights Reserved
IXFT5N3X3HV IXFH5N3X3 IXFK5N3X3 Fig. 7. Maximum rain Current vs. Case Temperature Fig. 8. Input Admittance 6 24 4 2 V S = V 2 8 6 6 2 8 = 25 o C 4 25 o C 2 4-4 o C -5-25 25 5 75 25 5 - egrees Centigrade 3. 3.5 4. 4.5 5. 5.5 6. 6.5 7. - Volts Fig. 9. Transconductance Fig.. Forward Voltage rop of Intrinsic iode 28 5 24 V S = V = - 4 o C 4 2 g f s - Siemens 6 2 8 25 o C 25 o C IS - Amperes 3 2 = 25 o C 4 = 25 o C 4 8 2 6 2 24 I - Amperes.2.4.6.8..2.4.6.8 V S - Volts Fig.. Gate Charge Fig. 2. Capacitance, 9 V S = 5V VGS - Volts 8 7 6 5 4 3 2 I = 75A I G = ma Capacitance - PicoFarads,, Ciss Coss Crss 4 8 2 6 2 24 28 Q G - NanoCoulombs f = MHz, IXYS Reserves the Right to Change Limits, Test Conditions, and imensions.
IXFT5N3X3HV IXFH5N3X3 IXFK5N3X3 3 Fig. 3. Output Capacitance Stored Energy Fig. 4. Forward-Bias Safe Operating Area R S(on) Limit 25 25μs EOSS - MicroJoules 2 5 5. Fig. 5. Maximum Transient Thermal Impedance 5 5 2 25 3, = 5 o C = 25 o C Single Pulse C μs ms ms.3 Fig. 5. Maximum Transient Thermal Impedance aaaa. Z(th)JC - K / W....... Pulse Width - Seconds 27 IXYS CORPORATION, All Rights Reserved IXYS REF: F_5N3X3 (28-S3) -2-7
IXFT5N3X3HV IXFH5N3X3 IXFK5N3X3 TO-268HV Outline PINS: - Gate 2 - Source 3 - rain TO-247 Outline TO-264 Outline A A2 E B A P O + K M B M R + Q S 2 + P 4 L 2 3 ixys option L C E A c b b2 b4 e O + J M C A M PINS: - Gate 2, 4 - rain 3 - Source Terminals: = Gate 2 = rain 3 = Source IXYS Reserves the Right to Change Limits, Test Conditions, and imensions.