SPB7N6C3 Cool MOS Power Transistor V DS @ T jmax 65 V Feature R DS(on).6 Ω New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance I D 7.3 PG-TO63 Type Package Ordering Code SPB7N6C3 PG-TO63 Q67-S39 Marking 7N6C3 Maximum Ratings Parameter Symbol Value Unit SPB Continuous drain current T C = 5 C T C = C 7.3.6 Pulsed drain current, t p limited by T jmax I D puls.9 valanche energy, single pulse E S 3 mj I D =5.5, V DD =5V valanche energy, repetitive t R limited by T ) jmax E R.5 I D =7.3, V DD =5V valanche current, repetitive t R limited by T jmax I R 7.3 Gate source voltage static V GS ± V Gate source voltage C (f >Hz) V GS ±3 Power dissipation, T C = 5 C P tot 3 W Operating and storage temperature T j, T stg -55...+5 C 6) Reverse diode dv/dt dv/dt 5 V/ns Rev..5 Page 5-9-
SPB7N6C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt 5 V/ns V DS = V, I D = 7.3, T j = 5 C Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case R thjc - -.5 K/W Thermal resistance, junction - case, FullPK R thjc_fp - - 3.9 Thermal resistance, junction - ambient, leaded R thj - - 6 Thermal resistance, junction - ambient, FullPK R thj_fp - - SMD version, device on PCB: R thj @ min. footprint @ 6 cm cooling area 3) - - - 35 6 - Soldering temperature, reflow soldering, MSL.6 mm (.63 in.) from case for s T sold - - 6 C Electrical Characteristics, at T j =5 C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V (BR)DSS V GS =V, I D =.5m 6 - - V Drain-Source avalanche V (BR)DS V GS =V, I D =7.3-7 - breakdown voltage Gate threshold voltage V GS(th) I D =35µ, V GS =V DS. 3 3.9 Zero gate voltage drain current I DSS V DS =6V, V GS =V, µ T j =5 C T j =5 C -.5 - - Gate-source leakage current I GSS V GS =3V, V DS =V - - n Drain-source on-state resistance R DS(on) V GS =V, I D =.6 Ω T j =5 C T j =5 C -.5.6 -.6 - Gate input resistance R G f=mhz, open drain -. - Rev..5 Page 5-9-
SPB7N6C3 Electrical Characteristics, at T j = 5 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Characteristics Transconductance g fs V DS *I D *R DS(on)max, - 6 - S I D =.6 Input capacitance C iss V GS =V, V DS =5V, - 79 - pf Output capacitance C oss f=mhz - 6 - Reverse transfer capacitance C rss - 6 - Effective output capacitance, ) energy related Effective output capacitance, 5) time related C o(er) V GS =V, V DS =V to V - 3 - C o(tr) - 55 - Turn-on delay time t d(on) V DD =3V, V GS =/3V, - 6 - ns Rise time t r I D =7.3, R G =Ω, - 3.5 - Turn-off delay time t d(off) T j =5 C - 6 Fall time t f - 7 5 Gate Charge Characteristics Gate to source charge Q gs V DD =V, I D =7.3-3 - nc Gate to drain charge Q gd - 9. - Gate charge total Q g V DD =V, I D =7.3, - 7 V GS = to V Gate plateau voltage V (plateau) V DD =V, I D =7.3-5.5 - V Limited only by maximum temperature Repetitve avalanche causes additional power losses that can be calculated as PV =ER*f. 3 Device on mm*mm*.5mm epoxy PCB FR with 6cm² (one layer, 7 µm thick) copper area for drain connection. PCB is vertical without blown air. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from to % V DSS. 5 Co(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to % V DSS. 6 ISD <=I D, di/dt<=/us, V DClink =V, V peak <V BR, DSS, T j <T j,max. Identical low-side and high-side switch. Rev..5 Page 3 5-9-
SPB7N6C3 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous I S T C =5 C - - 7.3 forward current Inverse diode direct current, I SM - -.9 pulsed Inverse diode forward voltage V SD V GS =V, I F =I S -. V Reverse recovery time t rr V R =V, I F =I S, - 6 ns Reverse recovery charge Q rr di F /dt=/µs - - µc Peak reverse recovery current I rrm - - Peak rate of fall of reverse recovery current di rr /dt T j =5 C - - /µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit SPB SPB R th. K/W C th. Ws/K R th.6 C th.57 R th3.5 C th3.65 R th.3 C th.67 R th5.37 C th5.795 R th6. C th6.5 P tot (t) T j R th R th,n Tcase External Heatsink C th C th C th,n T amb Rev..5 Page 5-9-
SPB7N6C3 Power dissipation P tot = f (T C ) Power dissipation FullPK P tot = f (T C ) SPP7N6C3 W 3 W 7 Ptot 6 Ptot 5 6 3 6 C 6 6 C 6 T C T C 3 Safe operating area I D = f ( V DS ) parameter : D =, T C =5 C Safe operating area FullPK I D = f (V DS ) parameter: D =, T C = 5 C ID ID - tp =. ms tp =. ms tp =. ms tp = ms DC - tp =. ms tp =. ms tp =. ms tp = ms tp = ms DC - V 3 V DS Rev..5 Page 5 - V 3 V DS 5-9-
SPB7N6C3 5 Transient thermal impedance Z thjc = f (t p ) parameter: D = t p /T K/W 6 Transient thermal impedance FullPK Z thjc = f (t p ) parameter: D = t p /t K/W ZthJC ZthJC - - D =.5 D =. D =. D =.5 D =. D =. single pulse - - D =.5 D =. D =. D =.5 D =. D =. single pulse -3-7 -6-5 - -3 s - t p 7 Typ. output characteristic I D = f (V DS ); T j =5 C parameter: t p = µs, V GS -3-7 -6-5 - -3 - - s t p Typ. output characteristic I D = f (V DS ); T j =5 C parameter: t p = µs, V GS V V V 7V 3 V V 6.5V 6V ID 6 6,5V 6V ID 9 7 6 5.5V 5,5V 5 5V 5V,5V 3.5V V 5 5 V 5 DS V Rev..5 Page 6 6 6 V 5 V DS 5-9-
SPB7N6C3 9 Typ. drain-source on resistance R DS(on) =f(i D ) parameter: T j =5 C, V GS Ω V Drain-source on-state resistance R DS(on) = f (T j ) parameter : I D =.6, V GS = V 3. SPP7N6C3 Ω.5V. R DS(on) 7 6 5V RDS(on). 5 3 5.5V 6V 6.5V V V.6.. 9% typ. 6 5 I D Typ. transfer characteristics I D = f ( V GS ); V DS x I D x R DS(on)max parameter: t p = µs 5 C -6-6 C T j Typ. gate charge V GS = f (Q Gate ) parameter: I D = 7.3 pulsed 6 SPP7N6C3 V ID 6 5 C VGS, V DS max, V DS max 6 6 6 6 V V GS Rev..5 Page 7 6 nc 3 Q Gate 5-9-
SPB7N6C3 3 Forward characteristics of body diode I F = f (V SD ) parameter: T j, tp = µs SPP7N6C3 Typ. switching time t = f (I D ), inductive load, T j =5 C par.: V DS =3V, V GS =/+3V, R G =Ω 9 ns 7 td(off) 6 IF t 5 T j = 5 C typ T j = 5 C typ T j = 5 C (9%) 3 tf td(on) tr T j = 5 C (9%) -....6. V 3 V SD 5 Typ. switching time t = f (R G ), inductive load, T j =5 C par.: V DS =3V, V GS =/+3V, I D =7.3 5 ns 3 5 6 I D 6 Typ. drain current slope di/dt = f(r G ), inductive load, T j = 5 C par.: V DS =3V, V GS =/+3V, I D =7.3 3 /µs t 35 3 di/dt 5 td(off) 5 5 5 td(on) tf tr 5 di/dt(off) di/dt(on) 6 Ω 3 R G Rev..5 Page 6 Ω 3 R G 5-9-
SPB7N6C3 7 Typ. drain source voltage slope dv/dt = f(r G ), inductive load, T j = 5 C par.: V DS =3V, V GS =/+3V, I D =7.3 Typ. switching losses E = f (I D ), inductive load, T j =5 C par.: V DS =3V, V GS =/+3V, R G =Ω V/ns.5 mws *) E on includes SDP6S6 diode commutation losses. 7 dv/dt 6 E.5 5 dv/dt(on). Eoff 3 dv/dt(off).5 Eon* 6 Ω R G 9 Typ. switching losses E = f(r G ), inductive load, T j =5 C par.: V DS =3V, V GS =/+3V, I D =7.3 3 5 6 I D valanche SO I R = f (t R ) par.: T j 5 C. mws *) E on includes SDP6S6 diode commutation losses..6. 6 T j(strt) =5 C E. IR 5 T j(strt) =5 C.. Eoff 3.6.. Eon* 6 Ω 3 R G Rev..5 Page 9-3 - - µs t R 5-9-
SPB7N6C3 valanche energy E S = f (T j ) par.: I D = 5.5, V DD = 5 V 6 mj Drain-source breakdown voltage V (BR)DSS = f (T j ) 7 SPP7N6C3 V ES 6 V(BR)DSS 6 66 6 6 6 6 5 56 6 C 6 5-6 - 6 C T j T j 3 valanche power losses P R = f (f ) parameter: E R =.5mJ 5 Typ. capacitances C = f (V DS ) parameter: V GS =V, f= MHz pf W 3 C iss PR 3 C C oss C rss 5 MHz 6 f Rev..5 Page 3 V 6 V DS 5-9-
SPB7N6C3 5 Typ. C oss stored energy E oss =f(v DS ) 5.5 µj.5 Eoss 3.5 3.5.5.5 3 V 6 V DS Definition of diodes switching characteristics Rev..5 Page 5-9-
SPB7N6C3 PG-TO63-3-/ PG-TO63-3-5/ PG-TO63-3- Rev..5 Page 5-9-
SPB7N6C3 Published by Infineon Technologies G 76 München Germany Infineon Technologies G 6 ll Rights Reserved. ttention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev..5 Page 3 5-9-