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CMDXL-24S Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 5697 (724) 925-7272 www.pwrx.com Dual IGBTMOD NX-S Series Module Amperes/2 Volts K L Y Z G A B C J K L D E F AT AU AU AV AU 63 62 6 6 59 58 57 56 55 54 53 52 5 5 49 48 47 46 45 44 43 42 4 AE X(4 PLACES) 4 39 38 37 36 35 M S R Q AH AJ AL AK DETAIL "A" 34 D AC E AB C() C(2) E2(3) E2(4) F R AA Z AD Es G TH2 (62) (6) (57) W(6 PLACES) NTC DETAIL "B" TH Cs (56) (52) Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 5.98 52. B 5.39 37. C 4.79 2.7 D 4.6 7.2 E 4.33±.2.±.5 F 3.72 94.5 G.6 5.4 H.26 6.5 J.53 3.5 K.4 3.6 L.3 7.75 M.6 4.5 N.53 39. P.86 22. Q.95 49.72 R.62 4.22 S.83 2.4 T.23 6. U.47 2. V.4.53 W M6 Metric M6 X.22 5.5 Dia. 2 3 4 V 5 6 7 8 9 2 3 4 5 6 7 8 9 2 2 22 23 24 25 26 27 Es2 G2 Cs2 (47) (46) (42) U T 33 32 DETAIL "A" 3 3 29 28 EC2 (33) EC2 (32) H P N C H AC AF AG AP AN AS AR DETAIL "B" Tolerance Otherwise Specified (mm) Division of Dimension Tolerance.5 to 3 ±.2 over 3 to 6 ±.3 over 6 to 3 ±.5 over 3 to 2 ±.8 over 2 to 4 ±.2 e tolerance of size between terminals is assumed to ±.4 Dimensions Inches Millimeters Y.75 9.24 Z.86 22. AA.8 27.53 AB.4 3.5 AC.5 3. AD.9 3. AE.42.74 AF.67+.4/-.2 7.+./-.5 AG.8 2.5 AH.29 7.4 AJ.5.2 AK.2.65 AL.4.5.5 3.8 AN.5 2.5 AP.2 3. AQ.88 Dia. 2.25 Dia. AR.2 Dia. 2.6 Dia. AS.6 Dia. 4.3 Dia. AT.67 6.9 AU.6 5.24 AV.75 9.5 AQ Description: Powerex IGBTMOD Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low V CE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control Photovoltaic/Fuel Cell Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CMDXL-24S is a 2V (V CES ), Ampere Dual IGBTMOD Power Module. Type Current Rating V CES Amperes Volts (x 5) CM 24 6/ Rev. 3
CMDXL-24S Amperes/2 Volts Absolute Maximum Ratings, unless otherwise specified Inverter Part IGBT/FWDi Characteristics Symbol Rating Units Collector-Emitter Voltage (V GE = V) V CES 2 Volts Gate-Emitter Voltage (V CE = V) V GES ±2 Volts Collector Current (DC, T C = 24 C) *2,* I C 9 Amperes Collector Current (Pulse, Repetitive) *3 I CRM 2 Amperes Total Power Dissipation (T C = 25 C) *2,*4 P tot 75 Watts Emitter Current (T C = 25 C) *2,*4,* I * E 9 Amperes Emitter Current (Pulse, Repetitive) *3 I * ERM 2 Amperes Module Characteristics Symbol Rating Units Maximum Junction Temperature T j(max) 75 C Maximum Case Temperature *2 T C(max) 25 C Operating Junction Temperature T j(op) -4 to +5 C Storage Temperature T stg -4 to +25 C Isolation Voltage (Terminals to Baseplate, f = 6Hz, AC minute) V ISO 25 Volts * Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Case temperature (T C ) and heatsink temperature (T s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. e heatsink thermal resistance should be measured just under the chips. *3 Pulse width and repetition rate should be such that device junction temperature (T j ) does not exceed T j(max) rating. *4 Junction temperature (T j ) should not increase beyond maximum junction temperature (T j(max) ) rating. * is module has A size IGBT and FWDi chips. is limitation is based on the terminal design. 2.9 32.6 46. 72.6 73.6 86. 87. 83.8 98.6 8.8 57.6 42.2 27.2 26.4 4. 72.2 73.2 85.8 86.8 94. 79.2 53.2 38. 23. / : IGBT, / : FWDi, : NTC ermistor Each mark points to the center position of each chip. 2 6/ Rev. 3
CMDXL-24S Amperes/2 Volts Electrical Characteristics, unless otherwise specified Inverter Part IGBT/FWDi Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Emitter Cutoff Current I CES V CE = V CES, V GE = V ma Gate-Emitter Leakage Current I GES V GE = V GES, V CE = V.5 µa Gate-Emitter reshold Voltage V GE(th) I C = ma, V CE = V 5.4 6 6.6 Volts Collector-Emitter Saturation Voltage V CE(sat) I C = A, V GE = 5V, *5.85 2.3 Volts (Terminal) I C = A, V GE = 5V, *5 2.5 Volts I C = A, V GE = 5V, T j = 5 C *5 2. Volts Collector-Emitter Saturation Voltage V CE(sat) I C = A, V GE = 5V, *5.7 2.5 Volts (Chip) I C = A, V GE = 5V, *5.9 Volts I C = A, V GE = 5V, T j = 5 C *5.95 Volts Input Capacitance C ies nf Output Capacitance C oes V CE = V, V GE = V 2 nf Reverse Transfer Capacitance C res.7 nf Gate Charge Q G V CC = 6V, I C = A, V GE = 5V 23 nc Turn-on Delay Time t d(on) 8 ns Rise Time t r V CC = 6V, I C = A,, 2 ns Turn-off Delay Time t d(off) R G = Ω, 6 ns Fall Time t f 3 ns Emitter-Collector Voltage V * EC I E = A, V GE = V, *5.85 2.3 Volts (Terminal) I E = A, V GE = V, *5.85 Volts I E = A, V GE = V, T j = 5 C *5.85 Volts Emitter-Collector Voltage V * EC I E = A, V GE = V, *5.7 2.5 Volts (Chip) I E = A, V GE = V, *5.7 Volts I E = A, V GE = V, T j = 5 C *5.7 Volts Reverse Recovery Time t * rr V CC = V, I E = 6A, 3 ns Reverse Recovery Charge Q * rr R G = Ω, 53.3 µc Turn-on Switching Energy per Pulse E on V CC = 6V, I C = I E = A, 89 mj Turn-off Switching Energy per Pulse E off, R G = Ω, 37 mj Reverse Recovery Energy per Pulse E * rr T j = 5 C, 73 mj Internal Lead Resistance R CC' + EE' Main Terminals-Chip,.5 mω Per Switch,T C = 25 C *2 Internal Gate Resistance r g Per Switch 2. Ω * Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Case temperature (T C ) and heatsink temperature (T s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. e heatsink thermal resistance should be measured just under the chips. *5 Pulse width and repetition rate should be such as to cause negligible temperature rise. 2.9 32.6 46. 83.8 98.6 8.8 57.6 42.2 27.2 26.4 4. 72.6 73.6 86. 87. 72.2 73.2 85.8 86.8 6/ Rev. 3 94. 79.2 53.2 38. 23. / : IGBT, / : FWDi, : NTC ermistor Each mark points to the center position of each chip. 3
CMDXL-24S Amperes/2 Volts Electrical Characteristics, unless otherwise specified (continued) NTC ermistor Part Characteristics Symbol Test Conditions Min. Typ. Max. Units Zero Power Resistance R 25 T C = 25 C *2 4.85 5. 5.5 kω Deviation of Resistance R/R T C = C, R = 493Ω -7.3 +7.8 % B Constant B (25/5) Approximate by Equation *6 3375 K Power Dissipation P 25 T C = 25 C *2 mw ermal Resistance Characteristics ermal Resistance, Junction to Case *2 R th(j-c) Q Per Inverter IGBT.2 K/W ermal Resistance, Junction to Case *2 R th(j-c) D Per Inverter FWDi.38 K/W Contact ermal Resistance, R th(c-f) ermal Grease Applied.7 K/W Case to Heatsink *2 (Per Module) *7 Mechanical Characteristics Mounting Torque M t Main Terminals, M6 Screw 3 35 4 in-lb M s Mounting to Heatsink, M5 Screw 22 27 3 in-lb Creepage Distance d s Terminal to Terminal mm Terminal to Baseplate mm Clearance d a Terminal to Terminal mm Terminal to Baseplate mm Weight m 69 Grams Flatness of Baseplate e c On Centerline X, Y *8 ± ± µm Recommended Operating Conditons, T a = 25 C (DC) Supply Voltage V CC Applied Across C-E2 6 85 Volts Gate (-Emitter Drive) Voltage V GE(on) Applied Across G-Es / G2-Es2 3.5 5. 6.5 Volts External Gate Resistance R G Per Switch 5. Ω *2 Case temperature (T C ) and heatsink temperature (T s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. e heatsink thermal resistance should be measured just under the chips. 83.8 98.6 8.8 57.6 42.2 27.2 *6 B (25/5) = In( R 25 )/( ) R 5 T 25 T 5 R 25 ; Resistance at Absolute Temperature T 25 [K]; T 25 = 25 [ C] + 273.5 = 298.5 [K] R 5 ; Resistance at Absolute Temperature T 5 [K]; T 5 = 5 [ C] + 273.5 = 323.5 [K] *7 Typical value is measured by using thermally conductive grease of λ =.9 [W/(m K)]. *8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. + : CONVEX : CONCAVE X Y MOUNTING SIDE 2.9 32.6 46. 72.6 73.6 86. 87. 94. 79.2 53.2 38. 23. / : IGBT, / : FWDi, : NTC ermistor Each mark points to the center position of each chip. 26.4 4. 72.2 73.2 85.8 86.8 MOUNTING SIDE : CONCAVE + : CONVEX 4 6/ Rev. 3
CMDXL-24S Amperes/2 Volts COLLECTOR CURRENT, I C, (PERES) 2 6 2 8 4 OUTPUT CHARACTERISTICS V GE = 2V 5 3 2 4 6 8 VOLTAGE, V CE, (VOLTS) 2 9 SATURATION VOLTAGE, V CE(sat), (VOLTS) 3.5 3. 2.5 2..5..5 SATURATION VOLTAGE CHARACTERISTICS V GE = 5V T j = 5 C 4 8 2 6 COLLECTOR-CURRENT, I C, (PERES) 2 SATURATION VOLTAGE, V CE(sat), (VOLTS) SATURATION VOLTAGE CHARACTERISTICS 8 6 4 2 I C = 2A I C = A I C = 4A 6 8 2 4 6 8 2 GATE-EMITTER VOLTAGE, V GE, (VOLTS) EMITTER CURRENT, I E, (PERES) 4 3 2 FREE-WHEEL DIODE FORWARD CHARACTERISTICS V GE = 5V T j = 5 C.5..5 2. 2.5 3. EMITTER-COLLECTOR VOLTAGE, V EC, (VOLTS) CAPACITANCE, C ies, C oes, C res, (nf) 3 2 V GE = V CAPACITANCE VS. V CE C ies C oes - V CC = 6V C res R G =.8Ω T j = 5 C - 2 2 3 4 VOLTAGE, V CE, (VOLTS) COLLECTOR CURRENT, I C, (PERES) SWITCHING TIME, (ns) 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS t d(off) t d(on) t f t r SWITCHING TIME VS. GATE RESISTANCE REVERSE RECOVERY CHARACTERISTICS GATE CHARGE VS. V GE SWITCHING TIME, (ns) 3 2 - t d(off) GATE RESISTANCE, R G, (Ω) t d(on) t f t r V CC = 6V I C = A T j = 5 C REVERSE RECOVERY, I rr (A), t rr (ns) 3 2 V CC = 6V R G =.8Ω T j = 5 C I rr t rr 2 3 4 EMITTER CURRENT, I E, (PERES) GATE-EMITTER VOLTAGE, V GE, (VOLTS) 2 6 2 8 4 I C = A V CC = 6V 5 5 2 25 335 GATE CHARGE, Q G, (nc) 6/ Rev. 3 5
CMDXL-24S Amperes/2 Volts SWITCHING LOSS VS. COLLECTOR CURRENT SWITCHING LOSS VS. GATE RESISTANCE REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT SWITCHING LOSS, E on, E off, (mj/pulse) 3 2 V CC = 6V R G =.8Ω T j = 5 C L s = 5nH E on SWITCHING LOSS, E on, E off, (mj/pulse) 3 2 V CC = 6V I C = A T j = 5 C L s = 5nH E on REVERSE RECOVERY SWITCHING LOSS, E rr, (mj/pulse) 3 2 V CC = 6V R G =.8Ω T j = 5 C L s = 5nH E rr E off 2 3 4 COLLECTOR CURRENT, I C, (PERES) - GATE RESISTANCE, R G, (Ω) E off 2 3 4 EMITTER CURRENT, I E, (PERES) REVERSE RECOVERY SWITCHING LOSS, E rr, (mj/pulse) 3 2 REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE V CC = 6V I C = A T j = 5 C L s = 5nH E rr - GATE RESISTANCE, R G, (Ω) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c') Z th = R th (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) -3-2 - - -2-3 Single Pulse T C = 25 C Per Unit Base = R th(j-c) =.2 C/W (IGBT) R th(j-c) =.38 C/W (FWDi) -3-5 -4-3 TIME, (s) - -2 6 6/ Rev. 3