PMRL1A12 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 697 (724) 92-7272 www.pwrx.com Three Phase IGBT Inverter + Brake Amperes/12 Volts W (6 PLACES) X (4 PLACES) AD AA W A B K K L Z V Z AG Z U AB AE AG B N P AC AC AH M M AF D C S TERMAL CODE 1 VUPC 2 UFO 3 UP 4 VUP1 VVPC 6 VFO 7 VP 8 VVP1 9 VWPC 1 WFO 11 WP R Y (4 PLACES) 19 13 12 9 8 E F V SQ. P (19 TYP.) Br FO VNC WN V N1 VN 4 1 Q VWPC UN AC P J N H G U (2 TYP.) WFO VVPC VFO VUPC WP VWP1 VP VVP1 UP T 12 VWP1 13 VNC 14 VN1 Br 16 UN 17 VN 18 WN 19 FO UFO VUP1 Description: Powerex Intellimod Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 2kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel diode power devices. Outline Drawing and Circuit Diagram B Dimensions Inches Millimeters A.31 13. B 4.33±.2 11±. C 4.33 11. D 3.7 78.±. E 2.81 71. F 2.62 66. G 1.37 34.7 H 1.32 33.6 J.9+.4/-.1 24.1+1./-. K 1.2 26. L 1.9 4. M.79 2. N.6 16. P.43±.1 11.±.3 Q 1.19 3. R.43 11. N W V Dimensions Inches Millimeters S.1 13. T.16 4. U.1 Dia. Dia.2. V.2 Sq. Sq.. W M Metric M X.22 Dia. Dia.. Y.24 Rad. Rad. 6 Z.39 1. AA.13 3.2 AB.8 2. AC.24 6. AD.71 18. AE.46 11.7 AF.74 18.7 AG.41 1. AH.8 21. U P Features: Complete Output Power Circuit Gate Drive Circuit Protection Logic Short Circuit Over Temperature Using On-chip Temperature Sensing Under Voltage Low Loss Using Full Gate CSTBT IGBT Chip Applications: Inverters UPS Motion/Servo Control Power Supplies Ordering Information: Example: Select the complete part number from the table below -i.e. PMRL1A12 is a 12V, Ampere Intellimod Intelligent Power Module. Type Current Rating V CES Amperes Volts (x 1) PM 12 1
PMRL1A12 Amperes/12 Volts Absolute Maximum Ratings, unless otherwise specified Characteristics Symbol PMRL1A12 Units Power Device Junction Temperature T j -2 to C Storage Temperature T stg -4 to 12 C Mounting Torque, M Mounting Screws 31 in-lb Mounting Torque, M Main Terminal Screws 31 in-lb Module Weight (Typical) 8 Grams Supply Voltage, Surge (Applied between P - N) (surge) 1 Volts Self-protection Supply Voltage Limit (Short Circuit protection Capability)* (prot.) 8 Volts Isolation Voltage, AC 1 minute, 6Hz Sinusoidal V ISO 2 Volts IGBT Inverter Sector Collector-Emitter Voltage (, V C = V) V CES 12 Volts Collector Current (T C = 2 C) (Note 1) ±I C Amperes Peak Collector Current (T C = 2 C) ±I CP 3 Amperes Collector Dissipation (T C = 2 C) (Note 1) P C 833 Watts IGBT Brake Sector Collector-Emitter Voltage (, V C = V) V CES 12 Volts Collector Current (T C = 2 C) (Note 1) ±I C 7 Amperes Peak Collector Current (T C = 2 C) ±I CP Amperes Collector Dissipation (T C = 2 C) (Note 1) P C 9 Watts Diode Forward Current I F 7 Amperes Diode Rated DC Reverse Voltage (T C = 2 C) V R(DC) 12 Volts Control Sector Supply Voltage (Applied between V UP1 -V UPC, V VP1 -V VPC, V WP1 -V WPC, V N1 -V NC ) V D 2 Volts Input Voltage (Applied between U P -V UPC, V P -V VPC, W P -V WPC, U N - V N - W N -Br-V NC ) V C 2 Volts Fault Output Supply Voltage V FO 2 Volts (Applied between U FO -V UPC, V FO -V VPC, W FO -V WPC, F O -V NC ) Fault Output Current (U FO, V FO, W FO, F O Terminals) I FO 2 ma *VD = 13. ~ 16.V, Inverter Part, Note 1: T C (under the chip) Measurement Point X Y Arm UP VP WP UN VN WN Br Axis IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi X 2.2 2.2 8.8 8.8 88.8 88.8 37.2 37.3 7.8 7.8 88.8 88.8 11.4 7. Y 7.1 46.8 7.1 46.8 7.1 46.8 28.4 38.6 28.4 38.6 28.4 38.6 28. 6.8 2
PMRL1A12 Amperes/12 Volts Electrical and Mechanical Characteristics, unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units IGBT Inverter Sector Collector-Emitter Saturation Voltage V CE(sat), V C = V, I C = A, 1.6 2. Volts, V C = V, I C = A, 1.8 2.3 Volts Diode Forward Voltage V EC -I C = A, V C = V, 2.3 3.3 Volts Inductive Load Switching Times t on.3.8 2. µs t rr, V C = V.3.8 µs t C(on) = 6V, I C = A.4 1. µs t off 1.2 2.8 µs t C(off).4 1.2 µs Collector-Emitter Cutoff Current I CES V CE = V CES,, 1. ma V CE = V CES,, 1 ma IGBT Brake Sector Collector-Emitter Saturation Voltage V CE(sat), V C = V, I C = A, 1.6 2. Volts, V C = V, I C = A, 1.8 2.3 Volts Forward Voltage V FM I F = A 2.3 3.3 Volts Collector-Emitter Cutoff Current I CES V CE = V CES,, 1. ma V CE = V CES,, 1 ma Control Sector Circuit Current I D, V C = V, V N1 -V NC 8 16 ma, V C = V, V XP1 -V XPC 2 4 ma Input ON Threshold Voltage V th(on) Applied between U P -V UPC, 1.2 1. 1.8 Volts Input OFF Threshold Voltage V th(off) V P -V VPC, W P -V WPC, U N - V N - W N -Br-V NC 1.7 2. 2.3 Volts Short Circuit Trip Level SC Inverter Part 3 Amperes (-2 C T j 12 C, ) Brake Part Amperes Short Circuit Current Delay Time t off(sc).2 µs Over Temperature Protection Trip Level 13 C (Detect T j of IGBT Chip) (hys) Reset Level 2 C Supply Circuit Under-voltage Protection UV Trip Level 11. 12. 12. Volts (-2 T j 12 C) UV R Reset Level 12. Volts Fault Output Current* I FO(H), V C = V.1 ma I FO(L), V C = V 1 ma Fault Output Pulse Width* t FO 1. 1.8 ms *Fault output is given only when the internal SC, and UV protections schemes of either upper or lower arm device operates to protect it. 3
PMRL1A12 Amperes/12 Volts Electrical and Mechanical Characteristics, unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Characteristics, unless otherwise specified Characteristic Symbol Condition Min. Typ. Max. Units Junction to Case Thermal Resistance R th(j-c)q IGBT (Per 1 Element) (Note 1).* C/Watt Inverter Part R th(j-c)d FWDi (Per 1 Element) (Note 1).23* C/Watt Junction to Case Thermal Resistance R th(j-c)q IGBT (Note 1).21* C/Watt Brake Part R th(j-c)d FWDi (Note 1).36* C/Watt Contact Thermal Resistance R th(c-f) Case to Fin Per Module,.27 C/Watt Recommended Conditions for Use Thermal Grease Applied (Note 1) Characteristic Symbol Condition Value Units Supply Voltage Applied across P-N Terminals 8 Volts Control Supply Voltage** V D Applied between V UP1 -V UPC,. ±1. Volts V VP1 -V VPC, V WP1 -V WPC, V N1 -V NC Input ON Voltage V C(on) Applied between U P -V UPC,.8 Volts Input OFF Voltage V C(off) V P -V VPC, W P -V WPC, U N - V N - W N -Br-V NC 9. Volts PWM Input Frequency f PWM 2 khz Arm Shoot-through Blocking Time t DEAD Input Signal 2. µs * If you use this value, R th(f-a) should be measured just under the chips. ** With ripple satisfying the following conditions: dv/dt swing ±V/µs, Variation 2V peak to peak. 4
PMRL1A12 Amperes/12 Volts 18 16 14 12 1 8 6 4 2 PUT CHARACTERISTICS V D = 17V. 1. 1. 2. VOLTAGE, V CE(sat), (VOLTS) 13 2. 1. 1.. SATURATION VOLTAGE CHARACTERISTICS 1 2 COLLECTOR-CURRENT, I C, (AMPERES) SATURATION VOLTAGE VS. SUPPLY VOLTAGE CHARACTERISTICS 2.4 2.2 2. 1.8 1.6 1.4 1.2 I C = A 1. 12 13 14 16 17 18 SUPPLY VOLTAGE, V D, (VOLTS) 1 3 1 2 1 1 FREE-WHEEL DIODE FORWARD CHARACTERISTICS 1. 1. 1. 2. 2. EMITTER-COLLECTOR VOLTAGE, V EC, (VOLTS) REVERSE RECOVERY CURRENT, I rr, (AMPERES) 1 8 6 4 2 REVERSE RECOVERY CHARACTERISTICS = 6V REVERSE RECOVERY TIME, t rr, (s) REVERSE RECOVERY CHARACTERISTICS = 6V 1 2 1 2 1..8.6.4.2 SWITCHG LOSS, E on, (mj/pulse) 2 1 SWITCHG LOSS (ON) VS. = 6V SWITCHG LOSS, E off, (mj/pulse) 2 1 SWITCHG LOSS (OFF) VS. = 6V SWITCHG LOSS, E rr, (mj/pulse) 1 SWITCHG RECOVERY LOSS CHARACTERISTICS = 6V 1 2 1 2 1 2
PMRL1A12 Amperes/12 Volts SWITCHG TIME, t on, (µs) SWITCHG TIME, t c(off), (µs) 1 1 1 1 1 1 SWITCHG TIME (ON) VS. = 6V 1-1 1 1 1 1 2 1 3 SWITCHG TIME (OFF) VS. = 6V SWITCHG TIME, t off, (µs) CIRCUIT CURRENT, I D, (ma) 1 1 1 SWITCHG TIME (OFF) VS. = 6V 1-1 1 1 1 1 2 1 3 16 14 12 1 8 6 4 2 CIRCUIT CURRENT VS. CARRIER FREQUENCY CHARACTERISTICS (N-SIDE - VERTER PART) SWITCHG TIME, t c(on), (µs) CIRCUIT CURRENT, I D, (ma) 1 1 1 SWITCHG TIME (ON) VS. 1-1 1 1 1 1 2 1 3 CIRCUIT CURRENT VS. CARRIER FREQUENCY CHARACTERISTICS (P-SIDE - VERTER PART) 16 14 12 1 8 6 4 2 = 6V 1-1 1 1 1 1 2 1 3 1 2 2 CIRCUIT FREQUENCY, f C, (khz) 1 2 2 CIRCUIT FREQUENCY, f C, (khz) SUPPLY CIRCUIT UNDER-VOLTAGE PRECTION, UV/UV r, (VOLTS) 2 16 12 8 SUPPLY CIRCUIT UNDER-VOLTAGE PRECTION CHARACTERISTICS 4 UV UV r - 1 JUNCTION TEMPERATURE, T j, ( C) SC (SC OF IS NORMALIZED 1) 2. 1.6 1.2.8.4 SHORT CIRCUIT TRIP LEVEL CHARACTERISTICS - 1 JUNCTION TEMPERATURE, T j, ( C) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c') Z th = R th (NORMALIZED VALUE) 1 1 1 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi - VERTER PART) Single Pulse T C = 2 C Per Unit Base = 1-1.19 C/W (IGBT).31 C/W (FWDi) 1-2 1-3 1-2 1-1 1 1 1 TIME, (s) 6
PMRL1A12 Amperes/12 Volts 1 8 6 4 2 PUT CHARACTERISTICS V D = 17V. 1. 1. 2. VOLTAGE, V CE(sat), (VOLTS) 13 SATURATION VOLTAGE CHARACTERISTICS 2. 2. 1. 1.. 2 4 6 8 1 SATURATION VOLTAGE VS. SUPPLY VOLTAGE CHARACTERISTICS 2.4 2.2 2. 1.8 1.6 1.4 1.2 I C = 7A 1. 12 13 14 16 17 18 SUPPLY VOLTAGE, V D, (VOLTS) 1 3 1 2 1 1 FREE-WHEEL DIODE FORWARD CHARACTERISTICS 1. 1. 1. 2. 2. 3. EMITTER-COLLECTOR VOLTAGE, V EC, (VOLTS) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c') Z th = R th (NORMALIZED VALUE) 1 1 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi - BRAKE PART) 1 Single Pulse T C = 2 C Per Unit Base = 1-1.21 C/W (IGBT).36 C/W (FWDi) 1-2 1-3 1-2 1-1 1 1 1 TIME, (s) 7