查询 BTS130 供应商 TEMPFET BTS 130 Features N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 1 2 3 Pin 1 2 3 G D S Type V DS I D R DS(on) Package Ordering Code BTS 130 50 V 27 A 0.05 Ω TO-220AB C67078-A5001-A3 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage V DS 50 V Drain-gate voltage, R GS = 20 kω V DGR 50 Gate-source peak voltage, aperiodic V gs ± 20 Continuous drain current, T C = 25 C I D 27 A ISO drain current T C = 85 C, V GS = 10 V, V DS = 0.5 V I D-ISO 7.5 Pulsed drain current, T C = 25 C I D puls 108 Short circuit current, T j = 55... + 150 C I SC 80 Short circuit dissipation, T j = 55... + 150 C P SCmax 1200 W Power dissipation P tot 75 Operating and storage temperature range T j, T stg 55... + 150 C DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55/150/56 Thermal resistance Chip-case Chip-ambient R th JC 1.67 R th JA 75 K/W 1 04.97
Electrical Characteristics at T j = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V GS = 0, I D = 0.25 ma Gate threshold voltage V GS = V DS, I D = 1 ma Zero gate voltage drain current V GS = 0 V, V DS = 50 V T j = 25 C T j = 125 C Gate-source leakage current V GS = 20 V, V DS = 0 T j = 25 C T j = 150 C Drain-source on-state resistance V GS = 10 V, I D =17 A V (BR)DSS 50 V GS(th) 2.5 3.0 3.5 I DSS I GSS 1 100 10 2 10 300 100 4 R DS(on) 0.04 0.05 V µa na µa Ω Dynamic Characteristics Forward transconductance V DS 2 I D R DS(on)max, I D = 17 A Input capacitance V GS = 0, V DS = 25 V, f = 1 MHz Output capacitance V GS = 0, V DS = 25 V, f = 1 MHz Reverse transfer capacitance V GS = 0, V DS = 25 V, f = 1 MHz Turn-on time t on, (t on = t d(on) + t r ) V CC = 30 V, V GS = 10 V, I D = 3 A, R GS = 50 Ω Turn-off time t off, (t off = t d(off) + t f ) V CC = 30 V, V GS = 10 V, I D = 3 A, R GS = 50 Ω g C S fs 8.0 13.0 18.0 pf iss 700 940 1250 C oss 500 750 C rss 180 270 t d(on) 25 40 ns t r 60 90 t d(off) 100 130 t f 75 95 2 04.97
Electrical Characteristics (cont d) at T j = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Reverse Diode Continuous source current I S 27 A Pulsed source current I SM 108 Diode forward on-voltage V SD V I F = 54 A, V GS = 0 1.5 2.0 Reverse recovery time t rr ns I F = I S, di F /dt = 100 A/µs, V R = 30 V 150 Reverse recovery charge Q rr µc I F = I S, di F /dt = 100 A/µs, V R = 30 V 1.0 Temperature Sensor Forward voltage I TS(on) = 10 ma, T j = 55... + 150 C Sensor override, t p 100 µs T j = 55... + 160 C Forward current T j = 55... + 150 C Sensor override, t p 100 µs T j = 55... + 160 C Holding current, V TS(off) = 5 V, T j = 25 C T j = 150 C Switching temperature V TS = 5 V Turn-off time V TS = 5 V, I TS(on) = 2 ma V TS(on) I TS(on) 1.4 1.5 10 10 600 I H 0.05 0.05 0.1 0.2 0.5 0.3 T TS(on) 150 t off 0.5 2.5 V ma C µs 3 04.97
Examples for short-circuit protection at T j = 55... + 150 C, unless otherwise specified. Parameter Symbol Examples Unit 1 2 Drain-source voltage V DS 15 30 V Gate-source voltage V GS 8.1 5.9 Short-circuit current I SC 80 37 A Short-circuit dissipation P SC 1200 1100 W Response time t SC(off) ms T j = 25 C, before short circuit 25 25 Short-circuit protection I SC = f (V DS ) Parameter: V GS Diagram to determine I SC for T j = 55... + 150 C Max. gate voltage V GS(SC) = f (V DS ) Parameter: T j = 55... + 150 C 4 04.97
Max. power dissipation P tot = f (T C ) Typ. drain-source on-state resistance R DS(on) = f (I D ) Parameter: V GS Typical output characteristics I D = f (V DS ) Parameter: t p =80µs Safe operating area I D = f (V DS ) Parameter: D = 0.01, T C =25 C 5 04.97
Drain-source on-state resistance R DS(on) = f (T j ) Parameter: I D = 17 A, V GS = 10 V (spread) Gate threshold voltage V GS(th) = f (T j ) Parameter: V DS = V GS, I D = 1 ma Typ. transfer characteristic I D = f (V GS ) Parameter: t p = 80 µs, V DS = 25 V Typ. transconductance g fs = f (I D ) Parameter: t p = 80 µs, V DS = 25 V 6 04.97
Continuous drain current I D = f (T C ) Parameter: V GS 10 V Forward characteristics of reverse diode I F = f (V SD ) Parameter: T j, t p = 80 µs (spread) Typ. gate-source leakage current I GSS = f (T C ) Parameter: V GS = 20 V, V DS = 0 Typ. capacitances C = f (V DS ) Parameter: V GS = 0, f = 1 MHz 7 04.97
Transient thermal impedance Z thjc = f (t p ) Parameter: D = t p /T 8 04.97
TO 220 AB Standard Ordering Code C67078-A5001-A3 TO 220 AB SMD version E3045 Ordering Code C67078-A5001-A9 9.9 9.5 3.7 4.4 1.3 12.8 17.5 4.6 2.8 1) 9.2 15.6 2) 1 13.5 3) 0.75 2.54 1.05 2.54 0.5 2.4 GPT05155 1) punch direction, burr max. 0.04 2) dip tinning 3) max. 14.5 by dip tinning press burr max. 0.05 9 04.97
Edition 04.97 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2000. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 10 04.97