Depletion Mode MOFET Preliminary Technical Information IXTHND IXTTND X = V I D(on) > A R D(on). N-Channel D TO-7 (IXTH) D D (Tab) ymbol Test Conditions Maximum Ratings X = C to C V V DX = C to C, R = M V X Continuous V M Transient V P D T C = C 9 W -... + C M C T stg -... + C T L Maximum Lead Temperature for oldering C T OLD. mm (.in.) from Case for s C M d Mounting Torque (TO-7). / Nm/lb.in. Weight TO-7 g TO- g ymbol Test Conditions Characteristic Values ( = C, Unless Otherwise pecified) Min. Typ. Max. BX = - V, I D = A V (off) = V, I D = ma -. -. V I X = V, = V na I DX(off) = X, = - V A = C A R D(on) = V, I D = A, Note. I D(on) = V, = V, Note A TO- (IXTT) = ate D = Drain = ource Tab = Drain Features Normally ON Mode International tandard Packages Molding Epoxies Meet UL 9 V- Flammability Classification Advantages Easy to Mount pace avings High Power Density Applications Audio Amplifiers tart-up Circuits Protection Circuits Ramp enerators Current Regulators Active Loads D (Tab) 7 IXY CORPORATION, All Rights Reserved DA(/7)
ymbol Test Conditions Characteristic Values ( = C, Unless Otherwise pecified) Min. Typ. Max. g fs = V, I D = A, Note 7 C iss pf C oss = -V, = V, f = MHz pf C rss 7 pf t d(on) ns Resistive witching Times t r ns V t = + V, = V, I D = A d(off) ns t R =. (External) f ns Q g(on) nc Q gs = + V, = V, I D = A 9 nc Q gd 9 nc R thjc. C/W R thc TO-7. C/W afe-operating-area pecification Characteristic Values ymbol Test Conditions Min. Typ. Max. OA = V, I D =.A, T C = 7 C, tp = s 7 W ource-drain Diode ymbol Test Conditions Characteristic Values ( = C, Unless Otherwise pecified) Min. Typ. Max. V D I F = A, = -V, Note.. V TO-7 Outline IXTHND IXTTND Terminals: - ate - ource e P - Drain Dim. Millimeter Inches Min. Max. Min. Max. A.7...9 A...7. A...9.9 b.... b.... b.7... C.... D...9. E.7... e..7.. L 9...7. L..77 P.... Q.9... R..9.7.. BC BC TO- Outline t rr I. μs F = A, -di/dt = A/ s I RM V A Q R = V, = -V RM. μc Note. Pulse test, t s, duty cycle, d %. Terminals: - ate - ource, - Drain PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical pecifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXY reserves the right to change limits, test conditions, and dimensions without notice. IXY Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXY MOFETs and IBTs are covered,,9,9,,9,9,7,,,,, B,,,77, 7,,7 B 7,7,B by one or more of the following U.. patents:,,7,7,,,7,,,9, B,,,7, B,79,9 7,,97 B,,,,79,7,7,,7,,7 B,,,7,,77,7 B 7,7,7
IXTHND IXTTND 9 Fig.. Output Characteristics @ = o C = V V V Fig.. Extended Output Characteristics @ = o C = V V V 7 -V V -V - V 7 9 - V 9 7 Fig.. Output Characteristics @ = o C = V V -V - V.E-.E-.E-.E-.E-.E-.E-7 Fig.. Drain Current @ = o C.E- 7 9 = -.V -.V -.7V -.V -.V -.V -.7V -.V.E- Fig.. Drain Current @ = o C.E+ Fig.. Dynamic Resistance vs. ate Voltage = -.V.E+ = 7V - V.E- -.7V.E+9 ID - Ampere.E-.E- -.V -.V -.V RO - Ohms.E+.E+7.E+ = o C = o C.E- -.7V -.V.E+.E- 7 9.E+ -. -. -. -. -. -. -. -. -. -. - Volts 7 IXY CORPORATION, All Rights Reserved
IXTHND IXTTND. Fig. 7. Normalized R D(on) vs. Junction Temperature. Fig.. R D(on) Normalized to I D = A Value vs. Drain Current. = V I D > A. = V V RD(on) - Normalized... RD(on) - Normalized.. = o C.. = o C. - - 7 - Degrees Centigrade. I D - Amperes Fig. 9. Input Admittance Fig.. Transconductance = V = V = - o C = o C o C - o C g f s - iemens o C o C - -. - -. - -. - -. - Volts I D - Amperes. Fig.. Normalized Breakdown and Threshold Voltages vs. Junction Temperature Fig.. Forward Voltage Drop of Intrinsic Diode = -V. (off) @ = V BV / V(off).. BX @ = - V I - Amperes = o C = o C.9. - - 7 - Degrees Centigrade....7..9 V D - Volts IXY Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTHND IXTTND, Fig.. Capacitance Fig.. ate Charge Capacitance - PicoFarads,, f = MHz Ciss Coss V - Volts - - - = V I D = A I = ma Crss - - Q - NanoCoulombs Fig.. Forward-Bias afe Operating Area @ T C = o C Fig.. Forward-Bias afe Operating Area @ T C = 7 o C = o C T C = o C ingle Pulse R D(on) Limit, DC μs μs ms ms ms Fig. 7. Maximum Transient Thermal Impedance = o C T C = 7 o C ingle Pulse R D(on) Limit DC, μs μs ms ms ms. Fig. 7. Maximum Transient Thermal Impedance hvjv. Z (th)jc - K / W....... Pulse Width - econds 7 IXY CORPORATION, All Rights Reserved IXY REF: T_ND(C)--