Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled HE diode Features: Very low V CE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s Designed for : Frequency Converters Uninterrupted Power Supply TRENCHSTOP and Fieldstop technology for 600V applications offers : very tight parameter distribution high ruggedness, temperature stable behavior very high switching speed low V CE(sat) Positive temperature coefficient in V CE(sat) Low EMI Low Gate Charge Very soft, fast recovery antiparallel Emitter Controlled HE diode Qualified according to JEDEC 1 for target applications Pbfree lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ G PGTO2473 C E Type V CE I C V CE(sat),Tj=25 C T j,max Marking Package 600V 1.5V 175 C K20T60 PGTO2473 Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage, T j 25 C V CE 600 V DC collector current, limited by T jmax T C = 25 C T C = 100 C Pulsed collector current, t p limited by T jmax I C p u ls 60 A Turn off safe operating area, V CE = 600V, T j = 175 C, t p = 1µs 60 Diode forward current, limited by T jmax T C = 25 C T C = 100 C Diode pulsed current, t p limited by T jmax I F p u l s 60 Gateemitter voltage V GE 20 V Short circuit withstand time 2) V GE = 15V, V CC 400V, T j 150 C t SC 5 s Power dissipation T C = 25 C P t o t 166 W Operating junction temperature T j 40...+175 Storage temperature T s t g 55...+150 C Soldering temperature, 1.6mm (0.063 in.) from case for 10s 260 I C I F 41 28 41 28 1 JSTD020 and JESD022 2) Allowed number of short circuits: <1000; time between short circuits: >1s. IFAG IPC TD VLS 1 Rev. 2.8 18.05.2015
Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction case Diode thermal resistance, junction case Thermal resistance, junction ambient R t h J C 0.9 R t h J C D 1.5 R t h J A 40 K/W Electrical Characteristic, at T j = 25 C, unless otherwise specified Parameter Symbol Conditions Static Characteristic Value min. Typ. max. Collectoremitter breakdown voltage V ( B R ) C E S V GE =0V, I C =0.2mA 600 Collectoremitter saturation voltage Diode forward voltage V C E ( s a t ) V F V GE = 15V, I C = T j =25 C T j =175 C V GE =0V, I F = T j =25 C T j =175 C Gateemitter threshold voltage V G E ( t h ) I C =290µA,V CE =V GE 4.1 4.9 5.7 Zero gate voltage collector current I C E S V CE =600V, V GE =0V T j =25 C T j =175 C Gateemitter leakage current I G E S V CE =0V,V GE =20V 100 na Transconductance g fs V CE =20V, I C = 11 S Integrated gate resistor R G i n t Ω 1.5 1.9 1.65 1.6 2.05 2.05 40 1500 Unit V µa Dynamic Characteristic Input capacitance C i s s V CE =25V, 1100 Output capacitance C o s s V GE =0V, 71 Reverse transfer capacitance C r s s f=1mhz 32 Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Q G a t e Short circuit collector current 1) I C ( S C ) V CC =480V, I C = V GE =15V pf 120 nc L E PGTO2473 13 nh V GE =15V,t SC 5 s V C C = 400V, T j 150 C 183.3 A 1) Allowed number of short circuits: <1000; time between short circuits: >1s. IFAG IPC TD VLS 2 Rev. 2.8 18.05.2015
Switching Characteristic, Inductive Load, at T j =25 C Parameter Symbol Conditions IGBT Characteristic Value min. Typ. max. Turnon delay time t d ( o n ) T j=25 C, 18 Rise time t r V CC=400V,I C=, V GE=0/15V, r G=12, 14 Turnoff delay time t d ( o f f ) L =131nH,C =31pF 199 Fall time t f 42 Turnon energy E on L, C from Fig. E Energy losses include 0.31 Turnoff energy E o f f tail and diode reverse 0.46 recovery. Total switching energy E ts 0.77 AntiParallel Diode Characteristic Diode reverse recovery time t rr T j =25 C, Diode reverse recovery charge Q rr V R =400V, I F =, 0.31 µc Diode peak reverse recovery current I r r m di F /dt=88/ s 13.3 A Diode peak rate of fall of reverse recovery current during t b Unit ns mj 41 ns di rr /dt 711 A/ s Switching Characteristic, Inductive Load, at T j =175 C Parameter Symbol Conditions IGBT Characteristic Value min. Typ. max. Turnon delay time t d ( o n ) T j=175 C, 18 Rise time t r V CC=400V,I C=, V GE=0/15V, r G=12, 18 Turnoff delay time t d ( o f f ) L =131nH,C =31pF 223 Fall time t f 76 Turnon energy E on L, C from Fig. E Energy losses include 0.51 Turnoff energy E o f f tail and diode reverse 0.64 recovery. Total switching energy E ts 1.15 AntiParallel Diode Characteristic Diode reverse recovery time t rr T j =175 C Diode reverse recovery charge Q rr V R =400V, I F =, 1.46 µc Diode peak reverse recovery current I r r m di F /dt=88/ s 18.9 A Diode peak rate of fall of reverse recovery current during t b Unit ns mj 176 ns di rr /dt 467 A/ s IFAG IPC TD VLS 3 Rev. 2.8 18.05.2015
t p =2µs 6 10µs IC, COLLECTOR CURRENT 5 4 3 I c I c T C =80 C T C =110 C IC, COLLECTOR CURRENT 1A DC 50µs 1ms 10ms 10Hz 100Hz 1kHz 10kHz 100kHz 0.1A 1V 10V 100V 1000V f, SWITCHING FREQUENCY V CE, COLLECTOREMITTER VOLTAGE Figure 1. Collector current as a function of switching frequency (T j 175 C, D = 0.5, V CE = 400V, V GE = 0/15V, r G = 12 ) Figure 2. Safe operating area (D = 0, T C = 25 C, T j 175 C; V GE =0/15V) 160W 140W 4 Ptot, POWER DISSIPATION 120W 100W 80W 60W 40W IC, COLLECTOR CURRENT 3 20W 0W 25 C 50 C 75 C 100 C 125 C 150 C 25 C 50 C 75 C 100 C 125 C 150 C T C, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (T j 175 C) T C, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (V GE 15V, T j 175 C) IFAG IPC TD VLS 4 Rev. 2.8 18.05.2015
5 5 V GE =20V V GE =20V IC, COLLECTOR CURRENT 4 3 15V 13V 11V 9V 7V IC, COLLECTOR CURRENT 4 3 15V 13V 11V 9V 7V 0V 1V 2V 3V V CE, COLLECTOREMITTER VOLTAGE Figure 5. Typical output characteristic (T j = 25 C) 0V 1V 2V 3V 4V V CE, COLLECTOREMITTER VOLTAGE Figure 6. Typical output characteristic (T j = 175 C) IC, COLLECTOR CURRENT 35A 3 25A 15A 5A =175 C 25 C 0V 2V 4V 6V 8V VCE(sat), COLLECTOREMITT SATURATION VOLTAGE 2.5V 2.0V 1.5V 1.0V 0.5V I C =4 I C = I C = 0.0V 0 C 50 C 100 C 150 C V GE, GATEEMITTER VOLTAGE Figure 7. Typical transfer characteristic (V CE =10V), JUNCTION TEMPERATURE Figure 8. Typical collectoremitter saturation voltage as a function of junction temperature (V GE = 15V) IFAG IPC TD VLS 5 Rev. 2.8 18.05.2015
t d(off) t d(off) 100ns t, SWITCHING TIMES 10ns t d(on) t f t, SWITCHING TIMES 100ns t f t d(on) t r 1ns 5A 15A 25A 3 35A 10ns t r I C, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, =175 C, V CE = 400V, V GE = 0/15V, r G = 12Ω, R G, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, = 175 C, V CE = 400V, V GE = 0/15V, I C =, 7V t, SWITCHING TIMES 100ns t d(on) t r t d(off) t f VGE(th), GATEEMITT TRSHOLD VOLTAGE 6V 5V 4V 3V 2V 1V min. typ. max. 10ns 25 C 50 C 75 C 100 C 125 C 150 C, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, V CE = 400V, V GE = 0/15V, I C =, r G =12Ω, 0V 50 C 0 C 50 C 100 C 150 C, JUNCTION TEMPERATURE Figure 12. Gateemitter threshold voltage as a function of junction temperature (I C = 0.29mA) IFAG IPC TD VLS 6 Rev. 2.8 18.05.2015
E, SWITCHING ENERGY LOSSES ) E 2.4mJ on and E ts include losses E ts due to diode recovery 2.0mJ 1.6mJ 1.2mJ 0.8mJ E off 0.4mJ E on 0.0mJ 5A 15A 25A 3 35A E, SWITCHING ENERGY LOSSES 2.4mJ 2.0mJ 1.6mJ 1.2mJ 0.8mJ 0.4mJ ) E on and E ts include losses due to diode recovery E on 0.0mJ E off E ts I C, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, = 175 C, V CE = 400V, V GE = 0/15V, r G = 12Ω, R G, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, = 175 C, V CE = 400V, V GE = 0/15V, I C =, 1.0mJ ) E on and E ts include losses due to diode recovery E ts 2.0mJ 1.8mJ 1.6mJ ) E on and E ts include losses due to diode recovery E, SWITCHING ENERGY LOSSES 0.8mJ 0.6mJ 0.4mJ 0.2mJ E off E on E, SWITCHING ENERGY LOSSES 1.4mJ 1.2mJ 1.0mJ 0.8mJ 0.6mJ 0.4mJ 0.2mJ E ts E on E off 0.0mJ 25 C 50 C 75 C 100 C 125 C 150 C, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, V CE = 400V, V GE = 0/15V, I C =, r G = 12Ω, 0.0mJ 300V 350V 400V 450V 500V 550V V CE, COLLECTOREMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, = 175 C, V GE = 0/15V, I C =, r G = 12Ω, IFAG IPC TD VLS 7 Rev. 2.8 18.05.2015
1nF VGE, GATEEMITTER VOLTAGE 15V 10V 5V 120V 480V c, CAPACITANCE 100pF C iss C oss C rss 0V 0nC 30nC 60nC 90nC 120nC Q GE, GATE CHARGE Figure 17. Typical gate charge (I C =20 A) 10pF 0V 10V 20V 30V 40V V CE, COLLECTOREMITTER VOLTAGE Figure 18. Typical capacitance as a function of collectoremitter voltage (V GE =0V, f = 1 MHz) 12µs IC(sc), short circuit COLLECTOR CURRENT 30 25 20 15 10 5 12V 14V 16V 18V tsc, SHORT CIRCUIT WITHSTAND TIME 10µs 8µs 6µs 4µs 2µs 0µs 10V 11V 12V 13V 14V V GE, GATEEMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (V CE 400V, T j 150 C) V GE, GATEEMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gateemitter voltage (V CE =400V, start at =25 C, max <150 C) IFAG IPC TD VLS 8 Rev. 2.8 18.05.2015
ZthJC, TRANSIENT THERMAL IMPEDANCE 10 1 K/W 10 2 K/W D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse R, ( K / W ), ( s ) 0.18715 6.92510 2 0.31990 1.08510 2 0.30709 6.79110 4 0.07041 9.5910 5 R 1 R 2 C 1= 1/R 1 C 2= 2/R 2 ZthJC, TRANSIENT THERMAL IMPEDANCE 10 0 K/W D=0.5 0.2 0.1 10 1 K/W 0.05 0.02 0.01 single pulse R, ( K / W ), ( s ) 0.13483 9.20710 2 6 0.58146 1.82110 2 0.44456 1.4710 3 0.33997 1.25410 4 R 1 R 2 C 1= 1/R 1 C 2= 2/R 2 1µs 10µs 100µs 1ms 10ms 100ms t P, PULSE WIDTH Figure 21. IGBT transient thermal impedance (D = t p / T) 10 2 K/W 1µs 10µs 100µs 1ms 10ms 100ms t P, PULSE WIDTH Figure 22. Diode transient thermal impedance as a function of pulse width (D=t P /T) 1.8µC 250ns 1.6µC =175 C trr, REVERSE RECOVERY TIME 200ns 150ns 100ns 50ns =175 C =25 C Qrr, REVERSE RECOVERY CHARGE 1.4µC 1.2µC 1.0µC 0.8µC 0.6µC 0.4µC 0.2µC =25 C 0ns 60/µs 90/µs 120/µs di F /dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (V R =400V, I F =, 60/µs 90/µs 120/µs di F /dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (V R = 400V, I F =, IFAG IPC TD VLS 9 Rev. 2.8 18.05.2015
OF REVERSE RECOVERY CURRENT TRENCHSTOP Series 24A =175 C 75/µs =25 C Irr, REVERSE RECOVERY CURRENT 16A 12A 8A 4A =25 C dirr/dt, DIODE PEAK RATE OF FALL 60/µs 45/µs 30/µs 15/µs =175 C 60/µs 90/µs 120/µs /µs 60/µs 90/µs 120/µs di F /dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (V R = 400V, I F =, di F /dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (V R =400V, I F =, 5 =25 C 2.0V I F =4 175 C IF, FORWARD CURRENT 4 3 VF, FORWARD VOLTAGE 1.5V 1.0V 0.5V 0V 1V 2V 0.0V 0 C 50 C 100 C 150 C V F, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature IFAG IPC TD VLS 10 Rev. 2.8 18.05.2015
IFAG IPC TD VLS 11 Rev. 2.8 18.05.2015
i,v di F /dt t =t + t r r S F Q =Q + Q r r S F t r r I F t S t F Q S Q F 10% I r r m t I r r m di 90% I r r m r r /dt V R Figure C. Definition of diodes switching characteristics T (t) j 1 r1 2 r 2 r n n p(t) r r 1 2 n r Figure A. Definition of switching times T C Figure D. Thermal equivalent circuit Figure B. Definition of switching losses IFAG IPC TD VLS 12 Rev. 2.8 18.05.2015
Published by Infineon Technologies AG 81726 Munich, Germany 2015 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in lifesupport devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. IFAG IPC TD VLS 13 Rev. 2.8 18.05.2015