High Voltage XPT TM IGBT w/ Diode Advance Technical Information IXYH1N5CV1HV S 11 = 5V = 1A (sat).v = 5ns t fi(typ) Symbol Test Conditions Maximum Ratings S = 5 C to 175 C 5 V V CGR = 5 C to 175 C, R GE = 1M 5 V V GES Continuous ± V V GEM Transient ±3 V 5 = 5 C 3 A 11 = 11 C 1 A I F11 = 11 C 1 A M = 5 C, 1ms A SSOA V GE = 15V, T VJ = 15 C, R G = 1 M = A (RBSOA) Clamped Inductive Load 15 V P C = 5 C 5 W -55... +175 C M 175 C T stg -55... +175 C T L Maximum Lead Temperature for Soldering 3 C T SOLD 1. mm (.in.) from Case for 1s C M d Mounting Torque 1.13/1 Nm/lb.in. Weight g TO-7HV (IXYH) G E Features C C (Tab) G = Gate C = Collector E = Emitter Tab = Collector High Voltage Package High Blocking Voltage High Peak Current Capability Low Saturation Voltage Advantages Low Gate Drive Requirement High Power Density Symbol Test Conditions Characteristic Values ( = 5 C, Unless Otherwise Specified) Min. Typ. Max. BS = 5 A, V GE = V 5 V V GE(th) = 5 A, = V GE 3. 5. V ES = S, V = V 5 A GE =. S, V = V T = 15 C ma GE J I GES = V, V GE = V 1 na (sat) = 1A, V GE = 15V, Note 1 3.3. V = 15 C.75 V Applications Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) Laser Generators Capacitor Discharge Circuits AC Switches 17 IXYS CORPORATION, All Rights Reserved. DS179A(5/17)
IXYH1N5CV1HV Symbol Test Conditions Characteristic Values ( = 5 C Unless Otherwise Specified) Min. Typ. Max. g fs = 1A, = 1V, Note 1 11 1 S R Gi Gate Input Resistance 5. C ies 19 pf C oes = 5V, V GE = V, f = 1MHz 9 pf C res pf Q g(on) 97 nc Q ge = 1A, V GE = 15V, =.5 S 13 nc Q gc 3 nc t d(on) 1 ns t Inductive load, = 5 C ri 19 ns E = 1A, V GE = 15V on.75 mj t =.5 S, R G = 1 d(off) ns t fi Note 5 ns 3.9 mj t d(on) 15 ns t Inductive load, = 15 C ri ns E = 1A, V GE = 15V on 5. mj t =.5 S, R G = 1 d(off) 35 ns t fi Note 3 ns. mj R thjc.3 C/W R thcs.1 C/W TO-7HV Outline D3 R D 1 e E e1 3 P Q L1 L S A A3 X A1 A P1 D1 D E E3 X E1 c b 3X PINS: 1 - Gate - Emitter 3, - Collector b1 3X Reverse Diode (FRED) ( = 5 C, Unless Otherwise Specified) Characteristic Value Symbol Test Conditions Min. Typ. Max. V F I 5. V F = 1A,V GE = V, Note 1 = 15 C. V I RM I A F = 1A, V GE = V, -di F /dt = 5A/μs, t V rr R = V, = 15 C 15 ns R thjc. C/W Notes: 1. Pulse test, t 3μs, duty cycle, d %.. Switching times & energy losses may increase for higher (clamp), or R G. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered,35,59,931, 5,9,91 5,37,1,1,5,,5 B1,3,3,77,55 7,5,73 B 7,157,33B by one or more of the following U.S. patents:,,7 5,17,5 5,3,37 5,31,5,59,3 B1,53,33,71,5 B,759,9 7,3,975 B,1,1 5,3,79 5,17,117 5,,715,3,7 B1,53,55,71,3,771,7 B 7,71,537
IXYH1N5CV1HV 3 Fig. 1. Output Characteristics @ = 5 o C V 1V 9V V 5 Fig.. Extended Output Characteristics @ = 5 o C 1V 13V 1 7V 15 1 V 11V 1V V 5V.5 1 1.5.5 3 3.5.5 5 5.5 5 1 9V V 7V V 3 1 Fig. 3. Output Characteristics @ = 15 o C V 1V 9V V 7V V VCE(sat) - Normalized.. 1. 1. 1. 1. 1. Fig.. Dependence of (sat) on = A. 1 3 5 7 5V. -5-5 5 5 75 1 5 15 175 - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig.. Input Admittance 7 = 5 o C 7 VCE - Volts 5 3 1A A 5 7 9 1 11 13 1 15 V GE - Volts 5 3 1 = 15 o C 5 o C - o C 3 5 7 9 V GE - Volts 17 IXYS CORPORATION, All Rights Reserved.
IXYH1N5CV1HV Fig. 7. Transconductance Fig.. Gate Charge 35 1 3 = - ºC 1 = 5V 5 5ºC I G = 1mA g f s - Siemens 15 15ºC VGE - Volts 1 1 5 1 3 5 7 - Amperes 1 3 5 7 9 1 Q G - NanoCoulombs Fig. 9. Capacitance Fig. 1. Reverse-Bias Safe Operating Area 1, 7 Capacitance - PicoFarads f = 1 MHz 1, Cies Coes 1 Cres 1 5 1 15 5 3 35 5 3 1 = 15ºC R G = 1Ω dv / dt < 1V / ns 5 5 75 1 5 15 175 5 5 1 Fig. 11. Maximum Transient Thermal Impedance (IGBT) Z(th)JC - K / W.1.1.1.1.1.1.1.1 1 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH1N5CV1HV 1 Fig.. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Switching Energy Loss vs. Collector Current 1 = 15ºC, 1 R G = 1Ω = 15ºC = 5V = 5V Eoff - MilliJoules 1 1 - MilliJoules Eoff - MilliJoules = 5ºC 1 - MilliJoules 1 3 5 7 R G - Ohms 1 3 - Amperes 1 Fig. 1. Inductive Switching Energy Loss vs. 1 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 1 R G = 1Ω 1 35 t f i t d(off) = 15ºC, 9 Eoff - MilliJoules 1 = 5V 1 - MilliJoules t f i - Nanoseconds 3 5 15 1 = 5V 7 5 t d(off) - Nanoseconds 5 3 5 5 75 1 5 15 - Degrees Centigrade 1 3 5 7 R G - Ohms Fig. 1. Inductive Turn-off Switching Times vs. Collector Current 35 Fig. 17. Inductive Turn-off Switching Times vs. t f i - Nanoseconds 35 3 5 15 t f i t d(off) R G = 1Ω, = 5V = 15ºC = 5ºC 3 3 t d(off) - Nanoseconds t f i - Nanoseconds 3 5 t f i t d(off) R G = 1Ω, = 5V 3 3 t d(off) - Nanoseconds 15 1 5 1 3 - Amperes 1 1 5 5 75 1 5 15 - Degrees Centigrade 17 IXYS CORPORATION, All Rights Reserved.
IXYH1N5CV1HV 1 Fig. 1. Inductive Turn-on Switching Times vs. Gate Resistance 1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current t r i - Nanoseconds t r i t d(on) = 15ºC, = 5V t d(on) - Nanoseconds t r i - Nanoseconds 5 3 t r i t d(on) R G = 1Ω, = 5V = 15ºC = 5ºC 1 1 1 t d(on) - Nanoseconds 1 1 3 5 7 R G - Ohms 1 3 - Amperes 1 7 Fig.. Inductive Turn-on Switching Times vs. t r i t d(on) R G = 1Ω, t r i - Nanoseconds 5 3 = 5V 1 1 1 t d(on) - Nanoseconds 1 1 5 5 75 1 5 15 - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_1N5CV1HV(5P-AT) -5-17-A
IXYH1N5CV1HV Fig. 1. Diode Forward Characteristics Fig.. Reverse Recovery Charge vs. -di F /dt 7.5. = 15ºC V R = V I F = 3A 5 = 5ºC 3.5 IF (A) 3 = 15ºC QRR (μc) 3..5 1A A. 1 1.5 1 3 5 7 9 1 11 V F (V) 1. 1 1 1 1 -di F / dt (A/μs) Fig. 3 Reverse Recovery Current vs. -di F /dt Fig.. Reverse Recovery Time vs. -di F /dt 55 5 5 = 15ºC V R = V I F = 3A 1A = 15ºC V R = V IRR (A) 35 3 A trr (ns) 1 1 3A 5 1 1A 15 A 1 1 1 1 1 di F /dt (A/μs) 1 1 1 1 1 -di F /dt (A/μs) 1.5 Fig. 5. Dynamic Parameters Q RR, I RR vs. 1 Fig.. Maximum Transient Thermal Impedance (Diode) 1. KF.95.9 K F Q RR Z(th)JC - K / W.5 K F I RR V R = V I F = 1A -dif /dt = 5A/μs. 1 1 1 (ºC).1.1.1.1.1 1 Pulse Width - Seconds 17 IXYS CORPORATION, All Rights Reserved.