N MITSBISHI TELLIGENT POER MODLES PM15CSA6 SLATED PACKAGE AD R AB A B AB Q Y (4 TYP.) S G H FO N NC M M AG AE NC AG V V NC N B P V NI OT 1234 5678 9 AA - THD (6 TYP.) K J J D 1 11 13 15 AD (15 TYP.) 12 14 16 18 Z - DIA. (4 TYP.) V N AF V 17 19 P 2.54 MM DIA. (2 TYP.).5 MM SQ. P (19 TYP.) OT TEMP Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.33±.4 11.±1. B 3.74±.2 95.±.5 C 3.5±.4 89.±1. D 3.27 83. E 2.91±.2 74.±.5 F 2.44 62. G 1.28 32.6 H 1.24 31.6 J 1.2 26. K.94 24. L.87 +.6/- 22. +1.5/-. M.79 2. N.76 19.4 P.75 19. Q.78 17.98 R.67 17.2 N N OT V PC X L P F X FO V PI OT E V VPC V C VP V FO V VPI OT 1. V PC 2. FO 3. P 4. V PI 5. V VPC 6. VFO 7. VP 8. V VPI 9. V PC 1. FO V PC P FO OT V PI P 11. P 12. V PI 13. V NC 14. V NI 15. NC 16. N 17. VN 18. N 19. FO AC Dimensions Inches Millimeters S.67 17. T.52 13.2.39 1. V.27 7..3 7.5 X.24 6. Y.24 Rad. Rad. 6. Z.22 Dia. Dia. 5.5 AA Metric M5 M5 AB.127 3.22 AC.1 2.6 AD.8 2. AE.7 1.8 AF.6 1.6 AG.2±.1.5±.3 T Description: Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 2kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel diode power devices. Features: Complete Output Power Circuit Gate Drive Circuit Protection Logic Short Circuit Over Current Over Temperature nder Voltage Applications: Inverters PS Motion/Servo Control Power Supplies Ordering Information: Example: Select the complete part number from the table below -i.e. PM15CSA6 is a 6V, 15 Ampere Intelligent Power Module. Type Current Rating V CES Amperes Volts (x 1) PM 15 6 Sep.2
Absolute Maximum Ratings, T j = 25 C unless otherwise specified Symbol Ratings nits Power Device Junction Temperature T j -2 to 15 C Storage Temperature T stg -4 to 125 C Case Operating Temperature T C -2 to 1 C Mounting Torque, M5 Mounting Screws 1.47 ~ 1.96 N m Mounting Torque, M5 Main Terminal Screws 1.47 ~ 1.96 N m Module eight (Typical) 55 Grams Supply Voltage Protected by OC and SC-(V D = 13.5-16.5V, Inverter Part) (prot.) 4 Volts Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 25 Vrms Control Sector Supply Voltage (Applied between V P1 -V PC, V VP1 -V VPC, V P1 -V PC, V N1 -V NC ) V D 2 Volts Input Voltage (Applied between P -V PC, V P -V VPC, P -V PC, N V N N -V NC ) V C 2 Volts Fault Output Supply Voltage (Applied between FO -V PC, V FO -V VPC, FO -V PC, -V NC ) V FO 2 Volts Fault Output Current (Sink Current of FO, V FO, FO and Terminal) I FO 2 ma IGBT Inverter Sector MITSBISHI TELLIGENT POER MODLES PM15CSA6 SLATED PACKAGE Collector-Emitter Voltage (, V C = 15V) V CES 6 Volts Collector Current, (T C = 25 C) I C 15 Amperes Peak Collector Current, (T C = 25 C) I CP 3 Amperes Supply Voltage (Applied between P - N) 45 Volts Supply Voltage, Surge (Applied between P - N) (surge) 5 Volts Collector Dissipation P C 5 atts Sep.2
MITSBISHI TELLIGENT POER MODLES PM15CSA6 SLATED PACKAGE Electrical and Mechanical Characteristics, T j = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. nits Control Sector Over Current Trip Level Inverter Part OC -2 C T 125 C, 21 3 Amperes Short Circuit Trip Level Inverter Part SC -2 C T 125 C, 42 Amperes Over Current Delay Time t off(oc) 1 µs Over Temperature Protection OT Trip Level 111 118 125 C OT r Reset Level 1 C Supply Circuit nder Voltage Protection V Trip Level 11.5 12. 12.5 Volts V r Reset Level 12.5 Volts Supply Voltage V D Applied between V P1 -V PC, 13.5 15 16.5 Volts V VP1 -V VPC, V P1 -V PC, V N1 -V NC Circuit Current I D, V C = 15V, V N1 -V NC 4 55 ma, V C = 15V, V XP1 -V XPC 13 18 ma Input ON Threshold Voltage V th(on) Applied between 1.2 1.5 1.8 Volts Input OFF Threshold Voltage V th(off) P -V PC, V P -V VPC, P -V PC, 1.7 2. 2.3 Volts N V N N -V NC PM Input Frequency f PM 3-φ Sinusoidal 15 2 khz Fault Output Current I FO(H), V FO = 15V.1 ma I FO(L), V FO = 15V 1 15 ma Minimum Fault Output Pulse idth t FO 1. 1.8 ms Sep.2
MITSBISHI TELLIGENT POER MODLES PM15CSA6 SLATED PACKAGE Electrical and Mechanical Characteristics, T j = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. nits IGBT Inverter Sector Collector Cutoff Current I CES V CE = V CES, T j = 25 C 1. ma V CE = V CES, T j = 125 C 1 ma Diode Forward Voltage V EC -I C = 15A,, V C = 15V 2.2 3.3 Volts Collector-Emitter Saturation Voltage V CE(sat), V C = V, I C = 15A 1.8 2.7 Volts, V C = V, I C = 15A, 1.75 2.63 Volts T j = 125 C Inductive Load Switching Times t on.4.8 2. µs t rr, V C = 15V.15.3 µs t C(on) = 3V, I C = 15A.4 1. µs t off T j = 125 C 2. 2.9 µs t C(off).6 1.2 µs Thermal Characteristics Characteristic Symbol Condition Min. Typ. Max. nits Junction to Case Thermal Resistance R th(j-c)q Each IGBT.25 C/att R th(j-c)f Each FDi.47 C/att Contact Thermal Resistance R th(c-f) Case to Fin Per Module,.27 C/att Thermal Grease Applied Recommended Conditions for se Characteristic Symbol Condition Value nits Supply Voltage Applied across P-N Terminals ~ 4 Volts V D Applied between V P1 -V PC, 15 ± 1.5 Volts V N1 -V NC, V VP1 -V VPC, V P1 -V PC Input ON Voltage V C(on) Applied between ~.8 Volts Input OFF Voltage V C(off) P -V PC, V P -V VPC, P -V PC, 4. ~ V D Volts N V N N -V NC PM Input Frequency f PM sing Application Circuit 5 ~ 2 khz Minimum Dead Time t dead Input Signal 2.5 µs Sep.2
MITSBISHI TELLIGENT POER MODLES PM15CSA6 SLATED PACKAGE SATRATION VOLTAGE V CE(sat), (VOLTS) 3. 2.5 2. 1.5 1..5 SATRATION VOLTAGE CHARACTERISTICS (TYPICAL) V C = V COLLECTOR-EMITTER SATRATION VOLTAGE V CE(sat), (VOLTS) 3. 2.5 2. 1.5 1. 5 1 15 2 COLLECTOR CRRENT, I C, (AMPERES).5 COLLECTOR-EMITTER SATRATION VOLTAGE CHARACTERISTICS (TYPICAL) I C = 15A V C = V 12 14 16 18 2 SPPLY VOLTAGE, V D, (VOLTS) COLLECTOR CRRENT, I C, (AMPERES) 15 1 5 V C = V OTPT CHARACTERISTICS (TYPICAL) V D = 17V 13 15 1 2 COLLECTOR-EMITTER VOLTAGE, V CE, (VOLTS) 3 SITCHG TIMES, t on, t off, (µs) 1 1 1 SITCHG TIME VS. COLLECTOR CRRENT (TYPICAL) = 3V Inductive Load 1-1 1 1 1 2 1 3 COLLECTOR CRRENT, I C, (AMPERES) t off t on DIODE FORARD CHARACTERISTICS SITCHG TIMES, t c(on), t c(off), (µs) 1 1 1 SITCHG TIME VS. COLLECTOR CRRENT (TYPICAL) = 3V Inductive Load t c(on) t c(off) 1-1 1 1 1 2 1 3 COLLECTOR CRRENT, I C, (AMPERES) OVER CRRENT TRIP LEVEL VS. SPPLY VOLTAGE (TYPICAL) REVERSE RECOVERY TIME, t rr, (µs) 1 1-1 REVERSE RECOVERY CRRENT VS. COLLECTOR CRRENT (TYPICAL) = 3V Inductive Load 1-2 1 1 1 1 2 1 3 COLLECTOR REVERSE CRRENT, I C, (AMPERES) I rr t rr OVER CRRENT TRIP LEVEL VS. TEMPERATRE (TYPICAL) 1 2 1 1 REVERSE RECOVERY CRRENT, I rr, (AMPERES) COLLECTOR REVERSE CRRENT, I C, (AMPERES) 1 3 1 2 V C = 15V 1 1.5 1. 1.5 2. 2.5 EMITTER-COLLECTOR VOLTAGE, V EC, (VOLTS) OVER CRRENT TRIP LEVEL % (NORMALIZED) 14 12 1 8 6 12 14 16 18 2 SPPLY VOLTAGE, V D, (VOLTS) OVER CRRENT TRIP LEVEL % (NORMALIZED) 14 12 1 8 6-5 5 1 15 JNCTION TEMPERATRE, T j, ( o C) Sep.2
MITSBISHI TELLIGENT POER MODLES PM15CSA6 SLATED PACKAGE FALT OTPT PLSE IDTH VS. TEMPERATRE (TYPICAL) CONTROL SPPLY VOLTAGE TRIP-RESET LEVEL TEMPERATRE DEPENDENCY (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each IGBT) FALT OTPT PLSE IDTH % (NORMALIZED) 14 12 1 8 6-5 5 1 15 JNCTION TEMPERATRE, T j, ( o C) V TRIP-RESET LEVEL, V t, V r, (VOLTS) 15 14 13 12 11 Vt V r -5 5 1 15 JNCTION TEMPERATRE, T j, ( o C) TRANSIENT IMPEDANCE, Z th(j-c), (NORMALIZED VALE) 1 1 1 1-1 1-2 1-3 1-3 SGLE PLSE STANDARD VALE = R th(j-c)q =.25 o C/ 1-2 1-1 1 1 1 TIME, (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each FDi) TRANSIENT IMPEDANCE, Z th(j-c), (NORMALIZED VALE) 1 1 1 1-1 1-2 1-3 1-3 SGLE PLSE STANDARD VALE = R th(j-c)f =.47 o C/ 1-2 1-1 1 1 1 TIME, (s) Sep.2