High Voltage, High Gain BiMOSFET TM Monolithic Bipolar MOS Transistor IXBK55N3 IXBX55N3 V CES = 3V 11 = 55A V CE(sat) 3.2V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings V CES = 25 C to 15 C 3 V V CGR = 25 C to 15 C, R GE = 1MΩ 3 V V GES Continuous ±25 V V GEM Transient ±35 V 25 = 25 C ( Chip Capability ) 13 A I LRMS = 25 C ( Lead RMS Limit ) A 11 = 11 C 55 A M = 25 C, 1ms 6 A SSOA V GE = 15V, T VJ = 125 C, R G = 2Ω M = 11 A G C E PLUS247 (IXBX) G G C E Tab Tab (RBSOA) Clamped Inductive Load @.8 V CES T SC V GE = 15V, = 125 C, (SCSOA) R G = 1Ω, V CE = 125V, Non-Repetitive 1 μs P C = 25 C 625 W -55... +15 C M 15 C T stg -55... +15 C T L Maximum Lead Temperature for Soldering 3 C T SOLD 1.6 mm (.62 in.) from Case for 1 26 C M d Mounting Torque (TO-264 ) 1.13/1 Nm/lb.in. F C Mounting Force (PLUS247 ) 2../4.5..27 N/lb. Weight TO-264 1 g PLUS247 6 g Symbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise Specified) Min. Typ. Max. BV CES = 1mA, V GE = V 3 V V GE(th) = 4mA, V CE = V GE 3. 5. V ES V CE = V CES, V GE = V 5 μa = 125 C 3 ma I GES V CE = V, V GE = ± 25V ±2 na V CE(sat) = 55A, V GE = 15V, Note 1 2.7 3.2 V = 125 C 3.3 V G = Gate E = Emitter C = Collector Tab = Collector Features High Blocking Voltage International Standard Packages Low Conduction Losses High Current Handling Capability MOS Gate Turn-On - Drive Simplicity Advantages Easy to Mount Space Savings High Power Density Applications Uninterruptible Power Supplies (UPS) Switch-Mode and Resonant-Mode Power Supplies Capacitor Discharge Circuits Laser Generators 211 IXYS CORPORATION, All Rights Reserved DS158A(11/11)
Symbol Test Conditions Characteristic Values ( = 25 C Unless Otherwise Specified) Min. Typ. Max. g fs = 55A, V CE = 1V, Note 1 32 5 S C ies 73 pf C oes V CE = 25V, V GE = V, f = 1MHz 275 pf C res 83 pf Q g 335 nc Q ge = 55A, V GE = 15V, V CE = V 47 nc Q gc 13 nc t d(on) 54 ns Resistive Switching Times, T t J = 25 C r 37 ns I t C = 11A, V GE = 15V d(off) 23 ns V t CE = 125V, R G = 2Ω f 268 ns t d(on) 52 ns Resistive Switching Times, = 125 C t r 585 ns I t C = 11A, V GE = 15V d(off) 215 ns V t CE = 125V, R G = 2Ω f 26 ns TO-264 Outline IXBK55N3 IXBX55N3 1 - GATE 2,4 - COLLECTOR 3 - EMITTER R thjc.2 C/W R thcs.15 C/W Reverse Diode PLUS 247 TM Outline Symbol Test Conditions Characteristic Values ( = 25 C Unless Otherwise Specified) Min. Typ. Max V F I F = 55A, V GE = V, Note 1 2.5 V t rr I F = 28A, V GE = V, -di F /dt = A/μs 1.9 μs I RM V R = V, V GE = V 54 A Note 1: Pulse Test, t 3μs, Duty Cycle, d 2%. Additional provisions for lead-to-lead isolation are required at V CE >V. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 - GATE 2 - COLLECTOR 3 - EMITTER Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21.19.25 A 1 2.29 2.54.9. A 2 1.91 2.16.75.85 b 1.14 1.4.45.55 b 1 1.91 2.13.75.84 b 2 2.92 3.12.115.123 C.61.8.24.31 D 2.8 21.34.819.84 E 15.75 16.13.62.635 e 5.45 BSC.215 BSC L 19.81 2.32.78.8 L1 3.81 4.32.15.17 Q 5.59 6.2.22.244 R 4.32 4.83.17.19 IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,49,961 5,237,481 6,162,665 6,44,65 B1 6,683,344 6,727,585 7,5,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,85,72 5,17,58 5,63,37 5,381,25 6,259,123 B1 6,534,343 6,71,45 B2 6,759,692 7,63,975 B2 4,881,16 5,34,796 5,187,117 5,486,715 6,36,728 B1 6,583,55 6,71,463 6,771,478 B2 7,71,537
IXBK55N3 IXBX55N3 Fig. 1. Output Characteristics @ = 25ºC V GE = 25V 2V 15V 3 25 Fig. 2. Extended Output Characteristics @ = 25ºC V GE = 25V 2V 15V 8 6 4 1V 2 15 1V 2 5 5V.5 1 1.5 2 2.5 3 3.5 4 5V 1 2 3 4 5 6 7 8 Fig. 3. Output Characteristics @ = 125ºC V GE = 25V 2V 15V 1.8 1.6 V GE = 15V Fig. 4. Dependence of V CE(sat) on Junction Temperature 8 6 4 1V VCE(sat) - Normalized 1.4 1.2 1. = 11A = 55A 2 5V.8 = 27.5A.5 1 1.5 2 2.5 3 3.5 4 4.5 5.6-5 -25 25 5 75 125 15 - Degrees Centigrade 5.5 Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 18 Fig. 6. Input Admittance 5. = 25ºC 16 14 VCE - Volts 4.5 4. 3.5 3. = 11A 55A 8 6 4 = 125ºC 25ºC - 4ºC 2.5 2. 27.5A 5 6 7 8 9 1 11 12 13 14 15 V GE - Volts 2 3. 3.5 4. 4.5 5. 5.5 6. 6.5 7. 7.5 8. 8.5 9. V GE - Volts 211 IXYS CORPORATION, All Rights Reserved
IXBK55N3 IXBX55N3 Fig. 7. Transconductance 18 Fig. 8. Forward Voltage Drop of Intrinsic Diode 9 = - 4ºC 16 8 14 g f s - Siemens 7 6 5 4 3 25ºC 125ºC IF - Amperes 8 6 = 25ºC = 125ºC 2 4 1 2 2 4 6 8 14 16 18 2 - Amperes.4.6.8 1. 1.2 1.4 1.6 1.8 2. 2.2 2.4 2.6 2.8 3. V F - Volts VGE - Volts 16 14 12 1 8 6 4 V CE = V = 55A I G = 1mA Fig. 9. Gate Charge Capacitance - PicoFarads, 1, 1, f = 1 MHz Fig. 1. Capacitance C ies C oes 2 C res 5 15 2 25 3 35 Q G - NanoCoulombs 1 5 1 15 2 25 3 35 4 Fig. 11. Reverse-Bias Safe Operating Area 1 Fig. 12. Maximum Transient Thermal Impedance 8 6 4 Z(th)JC - ºC / W.1.1 = 125ºC 2 R G = 2Ω dv / dt < 1V / ns 2 6 14 18 22 26 3 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions..1.1.1.1.1 1 1 Pulse Width - Seconds
IXBK55N3 IXBX55N3 7 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 7 Fig. 14. Resistive Turn-on Rise Time vs. Collector Current 6 R G = 2Ω, V GE = 15V V CE = 125V 6 = 125ºC t r 5 4 = 22A = 11A t r 5 4 R G = 2Ω, V GE = 15V V CE = 125V = 25ºC 3 3 2 25 35 45 55 65 75 85 95 15 115 125 - Degrees Centigrade 2 4 6 8 14 16 18 2 22 - Amperes t r 72 7 68 66 64 62 6 Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance t r t d(on) - - - - = 125ºC, V GE = 15V V CE = 125V = 22A = 11A 11 9 8 7 6 t d(on) t f 32 31 3 29 28 27 26 25 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature = 11A = 22A t f t d(off) - - - - R G = 2Ω, V GE = 15V V CE = 125V 3 28 26 24 22 2 18 16 t d(off) 58 5 24 14 56 4 2 3 4 5 6 7 8 9 1 11 12 13 14 15 R G - Ohms 23 25 35 45 55 65 75 85 95 15 115 125 - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Collector Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 38 32 36 68 t f 36 34 32 3 28 26 24 t f t d(off) - - - - R G = 2Ω, V GE = 15V V CE = 125V 3 28 26 24 22 2 18 t d(off) t f 34 32 3 28 26 t f t d(off) - - - - = 125ºC, V GE = 15V V CE = 125V = 11A = 22A 6 52 44 36 28 t d(off) 22 = 125ºC, 25ºC 16 24 2 2 14 4 6 8 14 16 18 2 22 - Amperes 22 2 3 4 5 6 7 8 9 1 11 12 13 14 15 R G - Ohms 211 IXYS CORPORATION, All Rights Reserved
IXBK55N3 IXBX55N3 Fig. 19. Forward-Bias Safe Operating Area Fig. 2. Forward-Bias Safe Operating Area V CE(sat) Limit @ = 25ºC V CE(sat) Limit @ = 75ºC ID - Amperes 1 1 25µs µs 1ms ID - Amperes 1 1 25µs µs 1ms 1ms.1 = 15ºC = 25ºC Single Pulse ms DC.1 = 15ºC = 75ºC Single Pulse 1ms ms DC.1 1 1 1, 1, V DS - Volts.1 1 1 1, 1, V DS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: B_55N3 (8T) 11-3-11-C