CM2EXS-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Chopper IGBT NX-Series Module 2 Amperes/12 Volts A D K F G J E H J S T U 6 5 4 3 M 7 2 L N AL (4 PLACES) P B 8 AK (4 PLACES) 1 V W X TH1 (6) E(7) K(8) DETAIL "A" TH2 (5) Th N T Es(4) G(3) C Tr Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.9 14. B 2.44 62. C.47 11.9 D 3.5 89. E 2.44 62. F.53 13.5 G.69 17.66 H.75 19.5 J.14 3.8 K.16 4.2 L 1.97 5. M.55 14. N.87 22. P 2.26 57.5 Q 1.83 46.5 R 2.9 73.71 S.8 2.5 T.67 17. Di Q R DETAIL "B" C(2) A(1) AB Z AA Y C AD AC Tolerance Otherwise Specified (mm) Division of Dimension Tolerance.5 to 3 ±.2 over 3 to 6 ±.3 over 6 to 3 ±.5 over 3 to 12 ±.8 over 12 to 4 ±1.2 The tolerance of size between terminals is assumed to ±.4 AG AE AH AJ Dimensions Inches Millimeters U.27 7. V.67 17. W.64 16.4 X.51 13.1 Y.17 4.4 Z.49 12.5 AA.12 3. AB.17 Dia. 4.3 Dia. AC.12 Dia. 2.6 Dia. AD.88 Dia. 2.25 Dia. AE.15 3.81 AF.45 1.15 AG.25.65 AH.5 1.2 AJ.29 7.4 AK.21 Dia. 5.5 Dia. AL M5 M5 AF Description: Powerex IGBT Modules are designed for use in switching applications. Each module consists of one IGBT Transistor and one super-fast recovery diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low V CE(sat) Discrete Super-Fast Recovery Clamp Diode RoHS Compliant Isolated Copper Baseplate for Easy Heat Sinking Applications: DC/DC Converter DC Motor Control Brake Circuit Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CM2EXS-24S is a 12V (V CES ), 2 Ampere Chopper IGBT Power Module. Type Current Rating V CES Amperes Volts (x 5) CM 2 24 7/12 Rev. 1
CM2EXS-24S 2 Amperes/12 Volts Absolute Maximum Ratings, unless otherwise specified Characteristics Symbol Rating Units Collector-Emitter Voltage (V GE = V) V CES 12 Volts Gate-Emitter Voltage (V CE = V) V GES ±2 Volts Collector Current (DC, T C = 119 C) *2 I C 2 Amperes Collector Current (Pulse, Repetitive) *3 I CRM 4 Amperes Total Power Dissipation (T C = 25 C) *2,*4 P tot 15 Watts Repetitive Peak Reverse Voltage (Clamp Diode Part, V GE = V) V RRM 12 Volts Forward Current (Clamp Diode Part, T C = 25 C) *2,*4 I *1 F 2 Amperes Forward Current (Clamp Diode Part, Pulse, Repetitive) *3 I *1 FRM 4 Amperes Maximum Junction Temperature T j(max) +175 C Operating Junction Temperature T j(op) -4 to +15 C Storage Temperature T stg -4 to +125 C Case Temperature T C -4 to +125 C Isolation Voltage (Terminals to Baseplate, f = 6Hz, AC 1 minute) V ISO 25 Volts *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode. *2 Case temperature (T C ) and heatsink temperature (T s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *3 Pulse width and repetition rate should be such that device junction temperature (T j ) does not exceed T j(max) rating. *4 Junction temperature (T j ) should not increase beyond maximum junction temperature (T j(max) ) rating. 51.1 4.4 36.9 37.5 37.9 Th Tr 18.9 Di LABEL SIDE Each mark points to the center position of each chip. Tr: IGBT Di: Clamp Diode Th: NTC Thermistor 2 7/12 Rev.
CM2EXS-24S 2 Amperes/12 Volts Electrical Characteristics, unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Emitter Cutoff Current I CES V CE = V CES, V GE = V 1 ma Gate-Emitter Leakage Current I GES ±V GE = V GES, V CE = V.5 µa Gate-Emitter Threshold Voltage V GE(th) I C = 2mA, V CE = 1V 5.4 6 6.6 Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 2A, V GE = 15V, *6 1.8 2.25 Volts (Terminal) I C = 2A, V GE = 15V, *6 2. Volts I C = 2A, V GE = 15V, T j = 15 C *6 2.5 Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 2A, V GE = 15V, *6 1.7 2.15 Volts (Chip) I C = 2A, V GE = 15V, *6 1.9 Volts I C = 2A, V GE = 15V, T j = 15 C *6 1.95 Volts Input Capacitance C ies 2 nf Output Capacitance C oes V CE = 1V, V GE = V 4. nf Reverse Transfer Capacitance C res.33 nf Gate Charge Q G V CC = 6V, I C = 2A, V GE = 15V 466 nc Turn-on Delay Time t d(on) 8 ns Rise Time t r V CC = 6V, I C = 2A,, 2 ns Turn-off Delay Time t d(off) R G = Ω, 6 ns Fall Time t f 3 ns Repetitive Peak Reverse Current I RRM V R = V RRM 1 ma Forward Voltage Drop V *1 F I F = 2A, V GE = V, *6 1.8 2.25 Volts Clamp Di Part (Terminal) I F = 2A, V GE = V, *6 1.8 Volts I F = 2A, V GE = V, T j = 15 C *6 1.8 Volts Forward Voltage Drop V *1 F I F = 2A, V GE = V, *6 1.7 2.15 Volts Clamp Di Part (Chip) I F = 2A, V GE = V, *6 1.7 Volts I F = 2A, V GE = V, T j = 15 C *6 1.7 Volts Reverse Recovery Time t *1 rr V CC = 6V, I F = 2A, 3 ns Reverse Recovery Charge Q *1 rr R G = Ω,, Clamp Di Part 1.7 µc Turn-on Switching Energy per Pulse E on V CC = 6V, I C = I F = 2A, 3.7 mj Turn-off Switching Energy per Pulse E off, R G = Ω, T j = 15 C, 21.5 mj Reverse Recovery Energy per Pulse E *1 rr, Clamp Di Part 14.2 mj Internal Lead Resistance R CC' + EE' Main Terminals-Chip, mω Per Switch,T C = 25 C *2 Internal Gate Resistance r g 9.8 Ω *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode. *2 Case temperature (T C ) and heatsink temperature (T s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *5 Pulse width and repetition rate should be such as to cause negligible temperature rise. 51.1 4.4 36.9 37.5 37.9 Th Tr 18.9 Di LABEL SIDE Each mark points to the center position of each chip. Tr: IGBT Di: Clamp Diode Th: NTC Thermistor 7/12 Rev. 3
CM2EXS-24S 2 Amperes/12 Volts Electrical Characteristics, unless otherwise specified (continued) NTC Thermistor Part Characteristics Symbol Test Conditions Min. Typ. Max. Units Zero Power Resistance R 25 T C = 25 C *2 4.85 5. 5.15 kω Deviation of Resistance R/R T C = 1 C, R 1 = 493Ω -7.3 +7.8 % B Constant B (25/5) Approximate by Equation *8 3375 K Power Dissipation P 25 T C = 25 C *2 1 mw Thermal Resistance Characteristics Thermal Resistance, Junction to Case *2 R th(j-c) Q Per IGBT.1 K/W Thermal Resistance, Junction to Case *2 R th(j-c) D Per Clamp Diode.19 K/W Contact Thermal Resistance, R th(c-f) Thermal Grease Applied 25 K/kW Case to Heatsink *2 (Per 1 Module) *7 Mechanical Characteristics Mounting Torque M t Main Terminals, M5 Screw 22 27 31 in-lb M s Mounting to Heatsink, M5 Screw 22 27 31 in-lb Creepage Distance d s Terminal to Terminal 2 mm Terminal to Baseplate 17 mm Clearance d a Terminal to Terminal 12 mm Terminal to Baseplate 1 mm Weight m 21 Grams Flatness of Baseplate e c On Centerline X, Y *5-1 +1 µm Recommended Operating Conditons, T a = 25 C (DC) Supply Voltage V CC Applied Across P-N 6 85 Volts Gate-Emitter Drive Voltage V GE(on) Applied Across G-E 13.5 15. 16.5 Volts External Gate Resistance R G 3 Ω *2 Case temperature (T C ) and heatsink temperature (T s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *5 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. *7 Typical value is measured by using thermally conductive grease of λ =.9 [W/(m K)]. 37.5 36.9 37.9 *8 B (25/5) = In( R 25 )/( 1 1 ) R 5 T 25 T 5 R 25 ; Resistance at Absolute Temperature T 25 [K]; T 25 = 25 [ C] + 273.15 = 298.15 [K] R 5 ; Resistance at Absolute Temperature T 5 [K]; T 5 = 5 [ C] + 273.15 = 323.15 [K] 51.1 4.4 18.9 Th Tr Di + : CONVEX : CONCAVE X Y MOUNTING SIDE LABEL SIDE Each mark points to the center position of each chip. Tr: IGBT Di: Clamp Diode Th: NTC Thermistor MOUNTING SIDE : CONCAVE MOUNTING SIDE + : CONVEX 4 7/12 Rev.
CM2EXS-24S 2 Amperes/12 Volts COLLECTOR CURRENT, I C, (AMPERES) 4 3 2 1 T j = 25 C 15 OUTPUT CHARACTERISTICS (CHIP - TYPICAL) 13.5 V GE = 2V 2 4 6 8 1 12 11 1 COLLECTOR-EMITTER VOLTAGE, V CE, (VOLTS) 9 COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) 3.5 3. 2.5 2. 1.5 1..5 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (CHIP - TYPICAL) V GE = 15V T j = 15 C 1 2 3 4 COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) 1 8 6 4 2 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (CHIP - TYPICAL) I C = 4A I C = 2A I C = 8A 1 3 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (CHIP - TYPICAL) V GE = 15V T j = 15 C 6 8 2 14 16 18 2 GATE-EMITTER VOLTAGE, V GE, (VOLTS).5 1. 1.5 2. 2.5 EMITTER-COLLECTOR VOLTAGE, V EC, (VOLTS) 7/12 Rev. 5
CM2EXS-24S 2 Amperes/12 Volts CAPACITANCE VS. V CE 1 3 HALF-BRIDGE SWITCHING CHARACTERISTICS CAPACITANCE, C ies, C oes, C res, (nf) 1 C ies C oes C res V CC = 6V 1-1 R G = Ω V GE = V 1-2 1-1 1 1 3 COLLECTOR-EMITTER VOLTAGE, V CE, (VOLTS) SWITCHING TIME, (ns) t d(on) t d(off) t f t r 1 3 HALF-BRIDGE SWITCHING CHARACTERISTICS t d(off) 1 3 SWITCHING TIME VS. GATE RESISTANCE t d(on) t d(off) SWITCHING TIME, (ns) t d(on) t f t r V CC = 6V R G = Ω T j = 15 C SWITCHING TIME, (ns) 1-1 1 1 3 EXTERNAL GATE RESISTANCE, R G, (Ω) t f t r V CC = 6V I C = 2A 6 7/12 Rev.
CM2EXS-24S 2 Amperes/12 Volts SWITCHING TIME VS. GATE RESISTANCE REVERSE RECOVERY CHARACTERISTICS 1 3 1 3 t d(on) t d(off) SWITCHING TIME, (ns) 1-1 1 EXTERNAL GATE RESISTANCE, R G, (Ω) t f t r V CC = 6V I C = 2A T j = 15 C REVERSE RECOVERY, I rr (A), t rr (ns) V CC = 6V R G = Ω I rr t rr 1 3 REVERSE RECOVERY CHARACTERISTICS GATE CHARGE VS. V GE REVERSE RECOVERY, I rr (A), t rr (ns) 1 3 V CC = 6V R G = Ω T j = 15 C I rr t rr GATE-EMITTER VOLTAGE, V GE, (VOLTS) 2 15 1 5 I C = 2A V CC = 6V 1 3 1 2 3 4 5 6 7 GATE CHARGE, Q G, (nc) 7/12 Rev. 7
CM2EXS-24S 2 Amperes/12 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS HALF-BRIDGE SWITCHING CHARACTERISTICS SWITCHING ENERGY, E on, E off, (mj) REVERSE RECIVERY ENERGY, E rr, (mj) V CC = 6V R G = Ω E on E off SWITCHING ENERGY, E on, E off, (mj) REVERSE RECIVERY ENERGY, E rr, (mj) V CC = 6V R G = Ω T j = 15 C E on E off 1 1 3 E rr 1 1 3 E rr HALF-BRIDGE SWITCHING CHARACTERISTICS HALF-BRIDGE SWITCHING CHARACTERISTICS SWITCHING ENERGY, E on, E off, (mj) REVERSE RECIVERY ENERGY, E rr, (mj) V CC = 6V I C /I E = 2A E on E off E rr SWITCHING ENERGY, E on, E off, (mj) REVERSE RECIVERY ENERGY, E rr, (mj) V CC = 6V I C /I E = 2A T j = 15 C E on E off E rr 1 1-1 1 GATE RESISTANCE, R G, (Ω) 1 1-1 1 GATE RESISTANCE, R G, (Ω) 8 7/12 Rev.
CM2EXS-24S 2 Amperes/12 Volts NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c') Z th = R th (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) 1 1-3 1-2 1-1 1 1-1 1-2 1-3 Single Pulse T C = 25 C Per Unit Base = R th(j-c) =.1 K/W (IGBT) R th(j-c) =.19 K/W (FWDi) 1-5 1-4 1-3 TIME, (s) 1-1 1-2 1-3 7/12 Rev. 9