Introduction to magnetic recording + recording materials

Similar documents
01 Development of Hard Disk Drives

Lecture 6 NEW TYPES OF MEMORY

Giant Magnetoresistance

Lecture 6. Alternative storage technologies. All optical recording. Racetrack memory. Topological kink solitons. Flash memory. Holographic memory

ECC Media Technology. 1. Introduction. 2. ECC Media. Shunji Takenoiri TuQiang Li Yoshiyuki Kuboki

A Review of Spintronics based Data Storage. M.Tech Student Professor

Nanoelectronics 12. Atsufumi Hirohata Department of Electronics. Quick Review over the Last Lecture

MRAM: Device Basics and Emerging Technologies

Perpendicular MTJ stack development for STT MRAM on Endura PVD platform

Moores Law for DRAM. 2x increase in capacity every 18 months 2006: 4GB

MSE 7025 Magnetic Materials (and Spintronics)

Perpendicular Magnetic Recording. Dmitri Litvinov and Sakhrat Khizroev Seagate Research

Index. annealing temperature 236, 238, 250, 310, , , 491, 691

Advanced Lab Course. Tunneling Magneto Resistance

1. Chapter 1: Introduction

From Hall Effect to TMR

Future Magnetic Recording Technologies

introduction: what is spin-electronics?

Giant Magnetoresistance

Spintronics. Seminar report SUBMITTED TO: SUBMITTED BY:

Thermal Effects in Magnetic Recording Media

ESE 570: Digital Integrated Circuits and VLSI Fundamentals

Ferromagnetism. In free space, the flux density and magnetizing field strength are related by the expression

Wouldn t it be great if

During such a time interval, the MOS is said to be in "deep depletion" and the only charge present in the semiconductor is the depletion charge.

! Charge Leakage/Charge Sharing. " Domino Logic Design Considerations. ! Logic Comparisons. ! Memory. " Classification. " ROM Memories.

Fundamental of HDD Technology (1)

NATIONAL CERTIFICATE (VOCATIONAL) NQF LEVEL 2 SUPPLEMENTARY EXAMINATION

Chapter 7. Sequential Circuits Registers, Counters, RAM

Author : Fabrice BERNARD-GRANGER September 18 th, 2014

MICROMAGNETICS OF EXCHANGE SPRING MEDIA: OPTIMIZATION AND LIMITS

Chapter 8. Conclusions and Further Work Overview of Findings

Anisotropy Distributions in Patterned Magnetic Media

Ferromagnetism and Electronic Transport. Ordinary magnetoresistance (OMR)

PHYS 1240 Sound and Music Professor John Price. Cell Phones off Laptops closed Clickers on Transporter energized

EE141- Fall 2002 Lecture 27. Memory EE141. Announcements. We finished all the labs No homework this week Projects are due next Tuesday 9am EE141

V High frequency magnetic measurements

Organisasi dan Arsitektur Komputer L#1: Fundamental Concepts Amil A. Ilham

Magnetic Recording. by Gaspare Varvaro. Istituto di Struttura della Materia CNR Nanostructured Magnetic Materials Group

Meeting of Modern Science and School Physics: College for School Teachers of Physics in ICTP. 27 April - 3 May, Information storage

ww.padasalai.net

GMR Read head. Eric Fullerton ECE, CMRR. Introduction to recording Basic GMR sensor Next generation heads TMR, CPP-GMR UCT) Challenges ATE

Introduction to Computer Engineering. CS/ECE 252, Fall 2012 Prof. Guri Sohi Computer Sciences Department University of Wisconsin Madison

1. Introduction : 1.2 New properties:

Magnetism and Magnetic Switching

VALLIAMMAI ENGINEERING COLLEGE

Essentials of Large Volume Data Management - from Practical Experience. George Purvis MASS Data Manager Met Office

Magnetic domain theory in dynamics

Some pictures are taken from the UvA-VU Master Course: Advanced Solid State Physics by Anne de Visser (University of Amsterdam), Solid State Course

ESE 570: Digital Integrated Circuits and VLSI Fundamentals

Scanning Probe Microscopy. L. J. Heyderman

3 MAGNETIC MATERIALS 3.1 INTRODUCTION

Emerging Memory Technologies

UNIT - IV SEMICONDUCTORS AND MAGNETIC MATERIALS

New Approaches to Reducing Energy Consumption of MRAM write cycles, Ultra-high efficient writing (Voltage-Control) Spintronics Memory (VoCSM)

Chapter 14. Optical and Magnetic Materials. 경상대학교 Ceramic Design Lab.

Nanoimprint Lithography

Functional Materials. Optical and Magnetic Applications. Electrical, Dielectric, Electromagnetic, Deborah D. L Chung.

SPINTRONICS-A RETROSPECTIVE AND PERSPECTIVE

Magnetic core memory (1951) cm 2 ( bit)

Contents. Acknowledgments

Material Property. Dr. Cherdsak Bootjomchai (Dr. Per)

Module-16. Magnetic properties

MAGNETIC FORCE MICROSCOPY

Supplementary Information for. Non-volatile memory based on ferroelectric photovoltaic effect

Magnetic Race- Track Memory: Current Induced Domain Wall Motion!

EFFECTS OF SKEW ANGLE AND TRANSITION CURVATURE IN HAMR HARD DISK DRIVES A THESIS SUBMITTED TO THE FACULTY OF THE UNIVERSITY OF MINNESOTA BY

CMOS Digital Integrated Circuits Lec 13 Semiconductor Memories

DocumentToPDF trial version, to remove this mark, please register this software.

Advanced Flash and Nano-Floating Gate Memories

The exchange interaction between FM and AFM materials

Mon., Feb. 04 & Wed., Feb. 06, A few more instructive slides related to GMR and GMR sensors

Electron Microscopy Images Reveal Magnetic Properties

Information storage and retrieval in a single levitating colloidal particle

Study of the areal density in the read heads with spin valves with nano-oxide-layer insertion

From Spin Torque Random Access Memory to Spintronic Memristor. Xiaobin Wang Seagate Technology

Femtosecond Heating as a Sufficient Stimulus for Magnetization Reversal

2D Coding and Iterative Detection Schemes

Contents. 1 Imaging Magnetic Microspectroscopy W. Kuch 1

Luigi Paolasini

Topics. Dynamic CMOS Sequential Design Memory and Control. John A. Chandy Dept. of Electrical and Computer Engineering University of Connecticut

Exchange Coupled Composite Media for Perpendicular Magnetic Recording

Page 1. A portion of this study was supported by NEDO.

Giant Magnetoresistance

FERROELECTRIC RAM [FRAM] Submitted in partial fulfillment of the requirement for the award of degree of Bachelor of Technology in Computer Science

ALU A functional unit

μ (vector) = magnetic dipole moment (not to be confused with the permeability μ). Magnetism Electromagnetic Fields in a Solid

Random Access Memory. DRAM & SRAM Design DRAM SRAM MS635. Dynamic Random Access Memory. Static Random Access Memory. Cell Structure. 6 Tr.

Simulation Of Spin Wave Switching In Perpendicular Media

Techniques for inferring M at small scales

Status and Trends of Optical Data Storage Technology

Advanced Topics In Solid State Devices EE290B. Will a New Milli-Volt Switch Replace the Transistor for Digital Applications?

CHAPTER 2 MAGNETISM. 2.1 Magnetic materials

ECE Enterprise Storage Architecture. Fall Survey of Next-Generation Storage

Web Site: Officers for 2007

( (Chapter 5)(Magnetism and Matter)

Physics (Theory) There are 30 questions in total. Question Nos. 1 to 8 are very short answer type questions and carry one mark each.

E102. Study of the magnetic hysteresis

CHAPTER-1 INTRODUCTION

Lecture 25. Semiconductor Memories. Issues in Memory

Transcription:

Introduction to magnetic recording + recording materials Laurent Ranno Institut Néel, Nanoscience Dept, CNRS-UJF, Grenoble, France I will give two lectures about magnetic recording. In the first one, I will present the field of data storage and some of the relevant parameters which have to be discussed when proposing magnetic storage as the relevant technology. In the second lecture I will discuss in more detail the magnetic materials which have been developed (mainly based on transition metals) and some new materials which are being considered for magnetic recording (for example ferromagnetic semiconductors). The physical properties (magnetisation, magnetic anisotropy, spin transport properties ) or physical effects (magnetisation reversal mechanism, magnetic coupling, magnetic biasing, magnetoresistances ) which are relevant to magnetic storage or magnetic sensing will be discussed. Many families of magnetic materials are relevant to magnetic recording, from hard magnetic materials for storage to soft materials for sensing. From metallic ferromagnets to insulating antiferromagnets, the range of useful materials is quite extended. Data storage Information Storage In our technological age, a huge amount of information needs to be stored in a digital manner. The trend is exponential and shows no signs of calming down. This is the driving force in the field of data storage and makes it a fast evolving industry. Regarding microelectronics, Moore s law is the well known self-replicating trend which predicts that the number of transistors per surface area will double every 18 months. In the last decade the growth of hard disk drive (HDD) bit density has been faster than that of microelectronics and has reached 100% bit density increase per year. A density of 100 Gigabit/in 2, originally thought to be a dream value, has been reached in labs in 2002 and is already in commercial HDD. The new target is 1 Terabit/in 2. Data storage is a large industry and many technologies compete. The life cycle of technologies is only a few years long and innovation is constant. Before discussing the field of high density magnetic recording, let us detail some of the criteria that govern storage technologies. Data The quantity of bits to store is a first parameter. A microprocessor will deal with 32 or 64 bits at a time and a few megabits (Mb) will be stored in cache memory. One hour of music (i.e a CD-ROM) will be equivalent to a few 100 Mbytes (MB) while one hour of video (i.e. a DVD-ROM) will need a few Gbytes of storage. The typical capacity of a personal computer hard disk drive has now reached 100 GB. A small archiving system will deal with terabytes (10 12 bytes) and a large archiving system will store petabytes (10 15 bytes). The total capacity of hard disk drives produced per year is already a few exabytes (10 18 bytes). Data access

Data should not only be stored but they must also be accessed. Sequential access (e.g. tapes) and random access (e.g. Random Access Memory RAM) are two possibilities, the choices depending on the use. Sequential access is suitable for archiving or to watch a video, whereas accessing files on a hard disk needs random access, as any bit can be required at any moment. The access time and the access rate also matter. The timescale can span orders of magnitude from minutes to access a tape to nanoseconds to read an individual RAM cell and the required data flow can reach Gigabytes per second. Volatility Data storage should show a certain lack of volatility. However, non-volatility will be designed taking into consideration the relevant timescale. This can span orders of magnitude, from years in the archiving business down to microseconds in computing. Competing Physical Effects Bistable state A digital memory requires two well defined and stable states to store a bit. Many physical effects offer such configurations. Bits can be stored using two physical levels by mechanically engraving the storage medium : bumps on a CD-ROM or DVD-ROM, tracks on old-age LPs (analogue storage). Optical properties of the media can be modified to create reflecting/non-reflecting bits (recordable (CD-R) and erasable (CD-RW)) or bits with opposite magneto-optical properties (magneto-optical storage). The data can also be materialized by the presence or absence of an electrical charge as in semiconductor memories (SRAM, DRAM, Flash), the presence or absence of electrical polarisation like Ferroelectric RAM (FeRAM), the crystallized or amorphous nature of an alloy as in phase change media (PCRAM memory) and of course the direction of a magnetic moment (magnetic tapes, hard disk media, magnetic RAM). Reading technique Depending on the way data have been stored and on data density (bit size), the appropriate reading technique is required. Mechanical bits (LPs) were read using a mechanical contact, present CD-ROMs are read using a focused infrared laser reflected from bumps in polycarbonate (bump height is a quarter of the wavelength in polycarbonate) so that the laser beam undergoes destructive interference when reflected from the edge of a bump. Optical bits are also read measuring a reflected laser beam. Electrically stored bits can be read because they control (open or closed) the channel of a transistor, by monitoring the discharge of a capacitor or by sensing the electrical resistance of the bit (phase change RAM). Magnetic bits are read by sensing the magnetic stray field above them or more directly by monitoring changes of the polarization of a laser (magneto-optical effects) or by measuring their resistance (magnetoresistive effect). Unexpected physical effects can be used in innovative systems such as the thermal dissipation change used in IBM s Millipede program. Characteristics of Magnetic Recording A ferromagnetic material can possess a well defined axis (the easy-axis) along which its magnetic moments will preferably align. The two possible directions will define two stable states. When the easy-axis is well defined (large remanence of the magnetisation along the

easy-axis in the absence of applied field) and if the field necessary to reverse the magnetic moment (the coercive field) is large enough, the material will be called a permanent magnet and can be used to store information. The minimum size of a stable magnetic particle is smaller than 10 nm (depending on the material), which translates directly into high density storage and the intrinsic switching time of a particle magnetisation is in the nanosecond range, which leads to short data read and write times. High density and fast write-time are two of the main advantages of magnetic recording. Here are some points which will be discussed in the lectures : θ=0 θ=π/2 θ=π M Stable Top of Energy Barrier Stable Stable states of the remanence of a magnetic particle. Thermally induced reversal of the particle magnetisation is possible when its volume becomes small enough. This phenomenon is called superparamagnetism and is one of physical limits that is being pushed back to improve recording density. Coupling to artifical antiferromagnetic layers has recently allowed the use of particles smaller than the superparamagnetic limit!

45 Gbit/in 2 demo media (Seagate) Nanoparticle arrays 8.5 nm grains 6 nm FePt particles σ area 0.5 σ area 0.1 To improve recording density, small particles with very narrow size distribution have to be synthesised. New materials such as high anisotropy FePt L1 0 are candidates. The following aim is to spatially organise the particle positions (lithography, self organisation ) and eventually to use only one particle / magnetic bit. (images from D. Weller (Seagate) see S. Sun, C. Murray, D. Weller, L. Folks, A. Moser, Science,287,1989 (2000)) MFM image of recorded tracks (longitudinal recording). One magnetic bit contains roughly 100 magnetic grains (cobalt based) so that the information is stable against losing (i.e. reversing) a few magnetic grains. The way information is coded and physically written gives also possibilities to improve density.

Tapes, floppies and hard disks traditionally used in-plane magnetisation (longitudinal geometry). Since 2006, perpendicular magnetisation is being used in hard disks as a way to improve density. It is a major technological leap, since new media with out of plane anisotropy had to be developed and must include magnetically soft underlayers to guide the magnetic flux. Write heads and read heads had also to be redesigned for this new geometry. Write-line Bit-line Write-line Word-line MR element Unit cell of a magnetic RAM. First generation uses magnetic fields to reverse magnetisation. Next generations may use current to assist reversal either by decreasing the coercivity by heating the selected element or even by suppressing the need for write- lines exploiting the spin torque effect. Resistance is modified by the magnetic configuration (this is magnetoresistance). Spin torque is the opposite effect of a spin polarised current on magnetic configuration (including current-induced domain wall motion and even magnetisation reversal in small elements).