New Product SiA462J N-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) a Q g (Typ.) 3 6.8 at V GS = V 2.2 at V GS = 6 V 2.22 at V GS = 4. V 2 PowerPAK SC-7-6L-Single 2. mm S 4 S 2 3 G 2. mm Bottom View Ordering Information: SiA462J-T-GE3 (Lead (Pb)-free and Halogen-free) nc FEATURES TrenchFET Power MOSFET % R g Tested Material categorization: For definitions of compliance please see /doc?9992 APPLICATIONS C/C Converters and Synchronous Buck Converters - Lower Ringing Voltage from Soft Turn-On - High Efficiency from Fast Turn-Off - Lower Shoot-Through Possibility Part # code Marking Code A S X X X X Lot Traceability and ate code G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T A = 2 C, unless otherwise noted) Parameter Symbol Limit Unit rain-source Voltage V S 3 V Gate-Source Voltage V GS ± 2 T C = 2 C 2 a T C = 7 C 2 Continuous rain Current (T J = C) I a T A = 2 C 2 a,b, c T A = 7 C 9.7 b, c A Pulsed rain Current (t = 3 µs) I M 4 T C = 2 C 2 Continuous Source-rain iode Current I a S T A = 2 C 2.9 b, c T C = 2 C 9 T C = 7 C 2 Maximum Power issipation P W T A = 2 C 3. b, c THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient b, f t s R thja 28 36 C/W Maximum Junction-to-Case (rain) Steady State R thjc.3 6. Notes: a. Based on package limited. b. Surface mounted on " x " FR4 board. c. t = s. d. See solder profile (/doc?7327). The PowerPAK SC-7 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 8 C/W. ocument Number: 63269 S3-628-Rev. A, 2-Mar-3 T A = 7 C THE PROUCTS ESCRIBE HEREIN AN THIS OCUMENT ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT /doc?9 2.2 b, c Operating Junction and Storage Temperature Range T J, T stg - to Soldering Recommendations (Peak Temperature) d, e 26 C
SiA462J SPECIFICATIONS (T J = 2 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static rain-source Breakdown Voltage V S V GS = V, I = 2 µa 3 V V S Temperature Coefficient V S /T J 34 I = 2 µa V GS(th) Temperature Coefficient V GS(th) /T J - mv/ C Gate-Source Threshold Voltage V GS(th) V S = V GS, I = 2 µa.2 2.4 V Gate-Source Leakage I GSS V S = V, V GS = ± 2 V ± na V S = 3 V, V GS = V Zero Gate Voltage rain Current I SS V S = 3 V, V GS = V, T J = C µa On-State rain Current a I (on) V S V, V GS = V A rain-source On-State Resistance a R S(on) V GS = 6 V, I = 7 A.6.2 V GS = V, I = 9 A..8 V GS = 4. V, I = 7 A.8.22 Forward Transconductance a g fs V S = V, I = 9 A 3 S ynamic b Input Capacitance C iss V S = V, V GS = V, f = MHz 7 Output Capacitance C oss 26 pf Reverse Transfer Capacitance C rss 2 V Total Gate Charge Q S = V, V GS = V, I = 2 A 7 g 7. nc Gate-Source Charge Q gs V S = V, V GS = 4. V, I = 2 A.7 Gate-rain Charge Q gd.6 Gate Resistance R g f = MHz.2 2 Turn-On elay Time t d(on) Rise Time t r V = V, R L =. 2 Turn-Off elay Time t d(off) I A, V GEN = V, R g = 3 Fall Time t f 2 Turn-On elay Time t d(on) 2 2 ns Rise Time t r V = V, R L =. 3 Turn-Off elay Time t d(off) I A, V GEN = 4. V, R g = 3 Fall Time t f 2 rain-source Body iode Characteristics Continuous Source-rain iode Current I S T C = 2 C 2 Pulse iode Forward Current a I SM 4 A Body iode Voltage V S I S = A.8.2 V Body iode Reverse Recovery Time t rr 2 4 ns Body iode Reverse Recovery Charge Q rr 2 nc I F = A, di/dt = A/µs, T J = 2 C Reverse Recovery Fall Time t a 2 ns Reverse Recovery Rise Time t b 8 Notes: a. Pulse test; pulse width 3 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 ocument Number: 63269 S3-628-Rev. A, 2-Mar-3 THE PROUCTS ESCRIBE HEREIN AN THIS OCUMENT ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT /doc?9
SiA462J TYPICAL CHARACTERISTICS (2 C, unless otherwise noted) 4 V GS = V thru 4 V 32 8 I - rain Current (A) 24 6 V GS = 3 V I - rain Current (A) 6 4 T C = 2 C 8 2 T C = 2 C.... 2. V S - rain-to-source Voltage (V) Output Characteristics T C = - C.... 2. 2. 3. V GS - Gate-to-Source Voltage (V) Transfer Characteristics.2 8 R S(on) - On-Resistance (Ω).22.9.6.3 V GS = 4. V V GS = 6 V V GS = V C - Capacitance (pf) 7 6 4 3 2 C rss C oss C iss. 8 6 24 32 4 I - rain Current (A) On-Resistance vs. rain Current and Gate Voltage 2 2 3 V S - rain-to-source Voltage (V) Capacitance.8 V GS - Gate-to-Source Voltage (V) 8 6 4 2 I = 2 A V S = 7. V V S = V V S = 24 V R S(on) - On-Resistance (Normalized).6.4.2..8 I = 9 A V GS = V, 6 V V GS = 4. V 2 4 6 8 2 Q g - Total Gate Charge (nc) Gate Charge.6 - - 2 2 7 2 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature ocument Number: 63269 S3-628-Rev. A, 2-Mar-3 3 THE PROUCTS ESCRIBE HEREIN AN THIS OCUMENT ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT /doc?9
SiA462J TYPICAL CHARACTERISTICS (2 C, unless otherwise noted). I = 9 A.4 I S - Source Current (A) T J = C T J = 2 C R S(on) - On-Resistance (Ω).3.2. T J = 2 C T J = 2 C...2.4.6.8..2 V S - Source-to-rain Voltage (V) Source-rain iode Forward Voltage. 2 4 6 8 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 2.2 3 2. 2.8 2 V GS(th) (V).6 I = 2 μa Power (W).4.2. - 2 2 7 2 T J - Temperature ( C) Threshold Voltage... Time (s) Single Pulse Power, Junction-to-Ambient Limited by R S(on) * I - rain Current (A). T A = 2 C BVSS Limited μs ms ms ms s s C.. V S - rain-to-source Voltage (V) * V GS > minimum V GS at which R S(on) is specified Safe Operating Area, Junction-to-Ambient 4 ocument Number: 63269 S3-628-Rev. A, 2-Mar-3 THE PROUCTS ESCRIBE HEREIN AN THIS OCUMENT ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT /doc?9
SiA462J TYPICAL CHARACTERISTICS (2 C, unless otherwise noted) 3 2 I - rain Current (A) 2 Package Limited 2 7 2 T C - Case Temperature ( C) Current erating* 2 Power issipation (W) 2 7 2 T C - Case Temperature ( C) Power, Junction-to-Case * The power dissipation P is based on T J(max.) = C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. ocument Number: 63269 S3-628-Rev. A, 2-Mar-3 THE PROUCTS ESCRIBE HEREIN AN THIS OCUMENT ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT /doc?9
SiA462J TYPICAL CHARACTERISTICS (2 C, unless otherwise noted) uty Cycle =. Normalized Effective Transient Thermal Impedance.2....2 Single Pulse. -4-3 -2 Square Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Notes: P M t t 2 t. uty Cycle, = t 2 2. Per Unit Base = R thja = 8 C/W 3. T JM - T A = P M Z (t) thja 4. Surface Mounted Normalized Effective Transient Thermal Impedance uty Cycle =..2... -4.2 Single Pulse -3-2 Square Wave Pulse uration (s) - Normalized Thermal Transient Impedance, Junction-to-Case maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?63269. 6 ocument Number: 63269 S3-628-Rev. A, 2-Mar-3 THE PROUCTS ESCRIBE HEREIN AN THIS OCUMENT ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT /doc?9
Package Information PowerPAK SC7-6L e b e b PIN PIN2 PIN3 PIN PIN2 PIN3 E E2 PIN6 PIN PIN4 PIN6 PIN PIN4 K3 K K2 K2 K K2 BACKSIE VIEW OF SINGLE A BACKSIE VIEW OF UAL Notes:. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating C A E K4 K L L E 2 K K E E3 z Z ETAIL Z SINGLE PA UAL PA IM MILLIMETERS INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max A.67.7.8.27.3.32.67.7.8.27.3.32 A -. -.2 -. -.2 b.23.3.38.9.2..23.3.38.9.2. C..2.2.6.8...2.2.6.8..98 2. 2..78.8.8.98 2. 2..78.8.8.8.9..33.37.4.3.63.73.2.24.28 2.3.23.33..9.3 E.98 2. 2..78.8.8.98 2. 2..78.8.8 E.4..6..9.63.8.9..33.37.4 E2.34.39.44.4.6.8 E3.42.47.2.7.9.2 e.6 BSC.26 BSC.6 BSC.26 BSC K.27 TYP. TYP.27 TYP. TYP K.4 TYP.6 TYP.32 TYP.3 TYP K2.24 TYP.9 TYP.22 TYP. TYP K3.22 TYP.9 TYP K4.3 TYP.4 TYP L.7.27.37.7...7.27.37.7.. T....2.4.6 ECN: C-743 Rev. C, 6-Aug-7 WG: 934 ocument Number: 73 6-Aug-7
Application Note 826 RECOMMENE PA LAYOUT FOR PowerPAK SC7-6L Single.3 (.2).6 (.26).3 (.4).27 (.). (.22).47 (.9) 2.2 (.87). (.9).87 (.34).23 (.9).3 (.4).3 (.4).6 (.26).9 (.37).3 (.2) imensions in mm/(inches) Return to Index APPLICATION NOTE ocument Number: 7486 Revision: 2-Jan-8
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