NPN Silicon AF Transistor Array Precision matched transistor pair: I C % For current mirror applications Low collectoremitter saturation voltage Two (galvanic) internal isolated Transistors Complementary type: BCM86S BCM846S: For orientation in reel see package information below Pbfree (RoHS compliant) package Qualified according AEC Q 4 6 C B E 6 4 TR TR E B C EHA778 Type Marking Pin Configuration Package BCM846S Ms =E =B =C 4=E =B 6=C SOT6 Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage V CEO 6 V Collectoremitter voltage V CES 8 Collectorbase voltage V CBO 8 Emitterbase voltage V EBO 6 Collector current I C ma Peak collector current, t p ms I CM Total power dissipation P tot mw T S = C Junction temperature T j C Storage temperature T stg 6...
Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) R thjs 4 K/W Electrical Characteristics at T A = C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage V (BR)CEO 6 V I C = ma, I B = A Collectorbase breakdown voltage V (BR)CBO 8 I C = µa, I E = A Collectoremitter breakdown voltage V (BR)CES 8 I C = µa, V BE = A Emitterbase breakdown voltage I E = µa, I C = A V (BR)EBO 6 Collectorbase cutoff current V CB = V, I E = A V CB = V, I E = A, T A = C DC current gain ) I C = µa, V CE = V I C = ma, V CE = V Collectoremitter saturation voltage ) I C = ma, I B =. ma I C = ma, I B = ma Base emitter saturation voltage ) I C = ma, I B =. ma I C = ma, I B = ma Baseemitter voltage ) I C = ma, V CE = V I C = ma, V CE = V Matching I B = µa, V CE = V CE =.V I B = µa, V CE = V CE =.V I CBO h FE V CEsat V BEsat V BE(ON) For calculation of R thja please refer to Application Note AN77 (Thermal Resistance Calculation) Puls test: t < µs; D < % I C µa. 9 4 mv 9 6 7 9 8 66 7 77 %
Electrical Characteristics at T A = C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency f T MHz I C = ma, V CE = V, f = MHz Collectorbase capacitance C cb.9 pf V CB = V, f = MHz Emitterbase capacitance C eb 9 V EB =. V, f = MHz Shortcircuit input impedance h e 4. kω I C = ma, V CE = V, f = khz Opencircuit reverse voltage transf. ratio h e 4 I C = ma, V CE = V, f = khz Shortcircuit forward current transf. ratio h e I C = ma, V CE = V, f = khz Opencircuit output admittance h e µs I C = ma, V CE = V, f = khz Noise figure I C = µa, V CE = V, f = khz, f = Hz, R S = kω F db
DC current gain h FE = ƒ(i C ) V CE = V Collectoremitter saturation voltage I C = ƒ(v CEsat ), h FE = EHP6 EHP67 h FE C Ι C ma C C C C C ma....4 V. Ι C V CEsat Baseemitter saturation voltage I C = ƒ(v BEsat ), h FE = Output characteristics I C = ƒ(v CE ), I B = parameter EHP64 ma Ι C ma C C C IB = 4 ua IB = 6 ua IB = ua IC 9 8 7 6 IB = 8 ua IB = 4 ua IB = ua IB = 6 ua 4 IB = ua IB = 8 ua IB = 4uA..4.6.8 V. V V BEsat V CE 4
Collector current I C = ƒ(v BE ) Collector cutoff current I CBO = ƒ(t A ) V CBO = V A V V 4 na EHP8 Ι CB IC max 4 typ 6.4..6.7.8 V V BE C T A Transition frequency f T = ƒ(i C ) V CE = parameter in V, f = GHz Collectorbase capacitance C cb = ƒ(v CB ) Emitterbase capacitance C eb = ƒ(v EB ) f T MHz EHP6 pf CCB(CEB) 9 8 7 6 4 CEB CCB ma Ι C 4 8 6 V V CB (V EB
Total power dissipation P tot = ƒ(t S ) Permissible Pulse Load R thjs = ƒ(t p ) mw K/W Ptot 7 7 RthJS....... D = 4 6 7 9 C T S 6 4 s t p Permissible Pulse Load P totmax /P totdc = ƒ(t p ) Ptotmax/PtotDC D =....... 6 4 s t p 6
Definition of matching I C = (I C I C )/I C $ # " 6 6! >?? 8? A 8? A 7
Package SOT6 BCM846S Package Outline ±. +... 6 4 6x. M. MAX...9 ±. A Pin marking.6.6.±.. MIN. +... Foot Print..9.6.7.6.6 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer, June Date code (Year/Month) Pin marking Laser marking BCR8S Type code Standard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel For symmetric types no defined Pin orientation in reel. 4.. 8. ±.. M A Pin marking.. 8
Edition 96 Published by Infineon Technologies AG 876 Munich, Germany 9 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in lifesupport devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 9
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