High Voltage XPT TM IGBT w/ Diode Advance Technical Information IXYLN2CV1 S = 2V 11 = A (sat).v = 13ns t fi(typ) (Electrically Isolated Tab) ISOPLUS i-pak TM Symbol Test Conditions Maximum Ratings S = 2 C to 17 C 2 V V CGR = 2 C to 17 C, R GE = 1M 2 V V GES Continuous ±2 V V GEM Transient ±3 V 2 = 2 C A 11 = 11 C A I F11 = 11 C 23 A M = 2 C, 1ms 3 A SSOA V GE = 1V, T VJ = 1 C, R G = 1 M = A (RBSOA) Clamped Inductive Load 1 V P C = 2 C 77 W -... +17 C M 17 C T stg -... +17 C T L Maximum Lead Temperature for Soldering 3 C T SOLD 1.6 mm (.62in.) from Case for 1s 26 C F C Mounting Force..12 / 9..27 N/lb V ISOL /6 Hz, RM, t = 1min 2 V~ Weight g G E Features C Isolated Tab G = Gate E = Emitter C = Collector Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface V~ Electrical Isolation High Voltage Package High Blocking Voltage High Peak Current Capability Low Saturation Voltage Symbol Test Conditions Characteristic Values ( = 2 C, Unless Otherwise Specified) Min. Typ. Max. BS = 2μA, V GE = V 2 V V GE(th) = 2μA, = V GE 3.. V ES = S, V = V 2 μa GE =. S = 12 C ma I GES = V, V GE = ±2V ±1 na (sat) = A, V GE = 1V, Note 1 3.2. V = 1 C. V Advantages Low Gate Drive Requirement High Power Density Applications UPS Motor Drives SMPS PFC Circuits High Frequency Power Inverters 217 IXYS CORPORATION, All Rights Reserved DS11B(/17)
IXYLN2CV1 Symbol Test Conditions Characteristic Values ( = 2 C Unless Otherwise Specified) Min. Typ. Max. g fs = A, = 1V, Note 1 2 2 S R Gi Gate Input Resistance 2.2 C ies 7 pf C oes = 2V, V GE = V, f = 1MHz 2 pf C res 7 pf Q g(on) 27 nc Q ge = A, V GE = 1V, =. S 2 nc Q gc 11 nc t d(on) 21 ns t ri Inductive load, = 2 C 22 ns = A, V GE = 1V 11.7 mj t d(off) =. S, R G = 1 2 ns t fi Note 2 13 ns E off 6.9 mj t d(on) 21 ns t ri Inductive load, = 1 C 22 ns = A, V GE = 1V 1.7 mj t d(off) =. S, R G = 1 2 ns t fi Note 2 2 ns E off 11. mj R thjc.26 C/W R thcs.1 C/W Reverse Sonic Diode (FRD) Symbol Test Conditions Characteristic Values ( = 2 C Unless Otherwise Specified) Min. Typ. Max. V F I F = A, V GE = V, Note 1. V = 1 C 3. V I RM I F = A, V GE = V, = 1 C 2 A t rr -di F /dt = 6A/ s V R = 12V 21 ns R thjc.3 C/W Notes: 1. Pulse test, t 3μs, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher (Clamp), or R G. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered,3,92,931,,9,961,237,1 6,2,66 6,,6 B1 6,63,3 6,727, 7,,73 B2 7,17,33B2 by one or more of the following U.S. patents:,6,72,17,,63,37,31,2 6,29,123 B1 6,3,33 6,71, B2 6,79,692 7,63,97 B2,1,,3,796,17,117,6,71 6,36,72 B1 6,3, 6,71,63 6,771,7 B2 7,71,37
IXYLN2CV1 7 6 3 2 1 Fig. 1. Output Characteristics @ = 2 o C. 1 1. 2 2. 3 3.. - Volts V GE = 1V 1V V 7V 6V V V 3V 3 2 1 Fig. 2. Extended Output Characteristics @ = 2 o C V GE = 1V 1 1 2 2 3 - Volts 1V 13V 12V 11V 1V 9V V 7V 6V V V 7 6 3 2 Fig. 3. Output Characteristics @ = 1 o C V GE = 1V 12V 1V V 7V 6V V V VCE(sat) - Normalized 2.2 2. 1. 1.6 1. 1.2 1.. V GE = 1V Fig.. Dependence of (sat) on = A = A = 2A 1 1 2 3 6 7 - Volts 3V.6. - -2 2 7 1 12 1 17 - Degrees Centigrade 7 Fig.. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 1 Fig. 6. Input Admittance 6 = 2 o C 12 1 VCE - Volts 3 = A A 6 2 = 1 o C 2 o C - o C 2A 2 3 6 7 9 1 11 12 13 1 1 V GE - Volts 1. 1. 2. 2. 3. 3..... 6. 6. V GE - Volts 217 IXYS CORPORATION, All Rights Reserved
IXYLN2CV1 Fig. 7. Transconductance Fig.. Gate Charge 9 = - o C 1 = 12V = A 7 12 I G = 1mA g f s - Siemens 6 3 2 o C 1 o C VGE - Volts 1 6 2 1 2 2 6 1 12 1 - Amperes 12 2 2 2 Q G - NanoCoulombs Fig. 9. Capacitance Fig. 1. Reverse-Bias Safe Operating Area 1, 9 Cies Capacitance - PicoFarads 1, 1 f = 1 MHz Coes Cres 7 6 3 2 1 = 1 o C R G = 1Ω dv / dt < 1V / ns 1 1 1 2 2 3 3 - Volts 2 7 1 12 1 17 2 22 2 - Volts Fig. 11. Maximum Transient Thermal Impedance 1.1 Z(th)JC - K / W.1.1.1.1.1.1.1.1 1 1 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYLN2CV1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 2 Fig. 13. Inductive Switching Energy Loss vs. Collector Current 3 3 3 E off = 1 o C, V GE = 1V = 12V 3 3 2 2 E off R G = 1Ω V GE = 1V = 12V 3 2 Eoff - MilliJoules 2 2 1 = A 2 2 1 - MilliJoules Eoff - MilliJoules 12 = 1 o C 2 1 - MilliJoules 1 = A 1 = 2 o C 1 1 2 3 6 7 9 1 R G - Ohms 2 3 6 7 - Amperes 36 Fig. 1. Inductive Switching Energy Loss vs. 36 Fig. 1. Inductive Turn-off Switching Times vs. Gate Resistance 6 Eoff - MilliJoules 32 2 2 2 12 E off R G = 1Ω V GE = 1V = 12V = A = A 32 2 2 2 12 - MilliJoules t f i - Nanoseconds 3 3 2 2 1 t f i t d(off) = 1 o C, V GE = 1V = 12V = A = A 2 36 3 t d(off) - Nanoseconds 1 2 2 7 1 12 1 - Degrees Centigrade 1 2 3 6 7 9 1 R G - Ohms 1 3 Fig.. Inductive Turn-off Switching Times vs. Collector Current 36 3 Fig. 17. Inductive Turn-off Switching Times vs. 36 t f i t d(off) t f i t d(off) 3 R G = 1Ω, V GE = 1V 32 3 R G = 1Ω, V GE = 1V 32 = 12V = 12V t f i - Nanoseconds 2 2 1 = 1 o C = 2 o C 2 2 2 t d(off) - Nanoseconds t f i - Nanoseconds 2 2 1 = A = A 2 2 2 t d(off) - Nanoseconds 1 1 2 3 6 7 - Amperes 12 12 2 7 1 12 1 - Degrees Centigrade 217 IXYS CORPORATION, All Rights Reserved
IXYLN2CV1 1 Fig. 1. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 3 12 t r i t d(on) = 1 o C, V GE = 1V 7 t r i t d(on) R G = 1Ω, V GE = 1V 2 t r i - Nanoseconds 1 6 = 12V = A = A 3 3 2 t d(on) - Nanoseconds t r i - Nanoseconds 6 3 2 = 12V = 1 o C = 2 o C 26 2 22 2 1 t d(on) - Nanoseconds 2 2 1 1 1 2 3 6 7 9 1 R G - Ohms 2 3 6 7 - Amperes 1 12 Fig. 2. Inductive Turn-on Switching Times vs. 29 t r i t d(on) 1 R G = 1Ω, V GE = 1V 27 = 12V t r i - Nanoseconds 6 = A = A 2 23 21 t d(on) - Nanoseconds 2 19 17 2 7 1 12 1 - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYLN2CV1 Fig. 21. Diode Forward Characteristics Fig. 22. Reverse Recovery Charge vs. -di F /dt 2 1 9 = 1 o C V R = 12V I F = A IF (A) 12 = 2 o C = 1 o C QRR (μc) 7 6 A 2A 3 1 2 3 6 7 9 V F (V) 2 3 6 7 9 1 11 12 13 1 -di F / dt (A/μs) Fig. 23. Reverse Recovery Current vs. -di F /dt Fig. 2. Reverse Recovery Time vs. -di F /dt 32 = 1 o C I F = A = 1 o C 7 V R = 12V 2 I F = A V R = 12V A IRR (A) 6 2A trr (ns) 2 2 A 2A 3 3 6 7 9 1 11 12 13 1 di F /dt (A/μs) 12 3 6 7 9 1 11 12 13 1 -di F /dt (A/μs) 1.1 Fig. 2. Dynamic Parameters Q RR, I RR vs. 1 Fig. 26. Maximum Transient Thermal Impedance (Diode) V R = 12V 1. I F = A -dif/dt = 6A/μs KF.9. K F I RR Z(th)JC - K / W.1.7 K F Q RR.6 2 6 1 12 1 ( o C).1.1.1.1.1 1 1 Pulse Width - Seconds 217 IXYS CORPORATION, All Rights Reserved IXYS REF: IXY_N2CHV(9T-P62) --17
IXYLN2CV1 ISOPLUS i-pak TM (IXYL) Outline IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.