2N55, Preferred Device Amplifier Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Collector Emitter oltage Collector Base oltage Rating Symbol alue Unit 2N55 2N55 CEO 140 CBO 180 Emitter Base oltage EBO 6.0 Collector Current Continuous I C 600 madc Total Device Dissipation @ T A = 25 C Derate above 25 C Total Device Dissipation @ T C = 25 C Derate above 25 C P D 625 5.0 P D 1.5 12 mw mw/ C W mw/ C 2 BASE COLLECTOR 3 1 EMITTER TO92 CASE 29 STYLE 1 Operating and Storage Junction Temperature Range T J, T stg 55 to +1 C 1 2 3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoAmbient R JA 0 C/W Thermal Resistance, JunctiontoCase R JC 83.3 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM 2N 555x AYWW x = 0 or 1 A = Assembly Location Y = Year WW = Work Week = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 06 March, 06 Rev. 4 1 Publication Order Number: 2N55/D
2N55, ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown oltage (Note 1) (I C = madc, I B = 0) 2N55 CollectorBase Breakdown oltage (I C = Adc, I E = 0 ) 2N55 EmitterBase Breakdown oltage (I E = Adc, I C = 0) Collector Cutoff Current ( CB =, I E = 0) 2N55 ( CB = 1, I E = 0) ( CB =, I E = 0, T A = C) 2N55 ( CB = 1, I E = 0, T A = C) Emitter Cutoff Current ( EB = 4.0, I C = 0) ON CHARACTERISTICS (Note 1) DC Current Gain (I C = madc, CE = 5.0 ) 2N55 (I C = madc, CE = 5.0 ) 2N55 (I C = madc, CE = 5.0 ) 2N55 CollectorEmitter Saturation oltage (I C = madc, I B = madc) Both Types (I C = madc, I B = 5.0 madc) 2N55 BaseEmitter Saturation oltage (I C = madc, I B = madc) Both Types (I C = madc, I B = 5.0 madc) 2N55 SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (I C = madc, CE =, f = MHz) Output Capacitance ( CB =, I E = 0, f = MHz) Input Capacitance ( EB = 0.5, I C = 0, f = MHz) 2N55 SmallSignal Current Gain (I C = madc, CE =, f = khz) (BR)CEO 140 (BR)CBO 180 (BR)EBO 6.0 I CBO nadc Adc I EBO nadc h FE 60 80 60 80 CE(sat) BE(sat) 2 2 0.15 0.25 0. 1.2 f T 0 MHz C obo 6.0 pf C ibo h fe 0 pf Noise Figure (I C = 2 Adc, CE = 5.0, R S = k, f = khz) 2N55 NF 8.0 db 1. Pulse Test: Pulse Width 0 s, Duty Cycle 2.0%. 2
2N55, h FE, DC CURRENT GAIN 0 0 0 T J = 125 C 25 C 55 C CE = CE = 5.0 7.0 5.0 0.1 0.2 0.3 0.5 0.7 2.0 3.0 5.0 7.0 70 Figure 1. DC Current Gain CE, COLLECTOREMITTER OLTAGE (OLTS) 0.9 0.8 0.7 0.6 I C = ma ma ma ma 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 2.0 5.0 I B, BASE CURRENT (ma) Figure 2. Collector Saturation Region, COLLECTOR CURRENT ( A) μ IC 1 0 1 2 3 4 CE = T J = 125 C 75 C REERSE 25 C I C = I CES FORWARD, OLTAGE (OLTS) 0.8 0.6 0.4 0.2 BE(sat) @ I C /I B = CE(sat) @ I C /I B = 5 0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 BE, BASEEMITTER OLTAGE (OLTS) Figure 3. Collector CutOff Region 0 0.1 0.2 0.3 0.5 2.0 3.0 5.0 Figure 4. On oltages 3
2N55,, TEMPERATURE COEFFICIENT (m/ C) θ 2.5 2.0 T J = 55 C to +135 C 1.5 0.5 C for CE(sat) 0 0.5 B for BE(sat) 1.5 2.0 2.5 0.1 0.2 0.3 0.5 2.0 3.0 5.0 Figure 5. Temperature Coefficients 70.2 in s INPUT PULSE t r, t f ns DUTY CYCLE = % BB 8.8 CC 3.0 k R C 0.25 F R B out 5.1 k in 1N914 C, CAPACITANCE (pf) 7.0 5.0 3.0 2.0 C ibo C obo alues Shown are for I C @ ma Figure 6. Switching Time Test Circuit 0.2 0.3 0.5 0.7 2.0 3.0 5.0 7.0 R, REERSE OLTAGE (OLTS) Figure 7. Capacitances t, TIME (ns) 0 0 0 0 t r @ CC = t d @ EB(off) = CC = 1 t r @ CC = 1 I C /I B = t, TIME (ns) 00 00 00 0 0 0 0 t s @ CC = 1 t f @ CC = 1 t f @ CC = I C /I B = 0.2 0.3 0.5 2.0 3.0 5.0 0 Figure 8. TurnOn Time 0.2 0.3 0.5 2.0 3.0 5.0 0 Figure 9. TurnOff Time 4
2N55, ORDERING INFORMATION Device Package Shipping 2N55 2N55G 2N55RLRA 2N55RLRAG 2N55RLRP 2N55RLRPG G RL1 RL1G RLRA RLRAG RLRM RLRMG RLRP RLRPG TO92 TO92 (PbFree) TO92 TO92 (PbFree) TO92 TO92 (PbFree) TO92 TO92 (PbFree) TO92 TO92 (PbFree) TO92 TO92 (PbFree) TO92 TO92 (PbFree) TO92 TO92 (PbFree) 00 Units / Box 00 / Tape & Reel 00 / Tape & Ammo Box 00 Units / Box 00 / Tape & Reel 00 / Tape & Ammo Box 2N55551ZL1 2N55551ZL1G TO92 TO92 (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 5
2N55, PACKAGE DIMENSIONS TO92 TO226AA CASE 2911 ISSUE AL SEATING PLANE R A X X H 1 N G P N B L K C D J SECTION XX NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.175 0.5 4.45 5. B 0.170 0.2 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533 G 0.045 0.055 1.15 1.39 H 0.095 0.5 2.42 2.66 J 0.015 0.0 0.39 0. K 0.0 12.70 L 0.2 6.35 N 0.080 0.5 2.04 2.66 P 0. 2.54 R 0.115 2.93 0.135 3.43 STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 8821312 USA Phone: 48082977 or 8003443860 Toll Free USA/Canada Fax: 4808297709 or 8003443867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8002829855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 291 Kamimeguro, Meguroku, Tokyo, Japan 15051 Phone: 813577338 6 ON Semiconductor Website: Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. 2N55/D