V DRM = 4500 V I TGQM = 600 A I TSM = 3 10 3 A V T0 = 1.9 V r T = 3.5 mω V Dclink = 2800 V Asymmetric Gate turn-off Thyristor 5SGA 06D4502 PRELIMINARY Patented free-floating silicon technology Low on-state and switching losses Central gate electrode Industry standard housing Cosmic radiation withstand rating Doc. No. 5SYA1236-00 Jun. 04 Blocking Repetitive peak off-state Permanent DC for 100 FIT failure rate V DRM V GR 2 V 4500 V V RRM 17 V V Dclink Ambient cosmic radiation at sea level in open air. 2800 V Repetitive peak off-state I DRM V D = V DRM, V GR 2 V 20 ma I RRM V R = V RRM, R GK = Ω 50 ma Mechanical data Mounting force F m 10 11 12 kn Pole-piece diameter D p ± 0.1 mm 34 mm Housing thickness H 26 mm Weight m 0.25 kg Surface creepage distance D s Anode to Gate 30 mm Air strike distance D a Anode to Gate 20.5 mm 1) Maximum rated values indicate limits beyond which damage to the device may occur
GTO Data 5SGA 06D4502 On-state Max. average on-state I T(AV)M Half sine wave, T C = 85 C 210 A Max. RMS on-state I T(RMS) 330 A surge Limiting load integral surge Limiting load integral surge I TSM t p = 8.3 ms, T vj = 125 C, sine wave 3.1 10 3 A I 2 t 40 10 3 A 2 s I TSM t p = 10 ms, T vj = 125 C, sine wave 3 10 3 A I 2 t 45 10 3 A 2 s I TSM t p = 1 ms, T vj = 125 C, sine wave 6 10 3 A Limiting load integral I 2 t 18 10 3 A 2 s On-state V T I T = 600 A, T vj = 125 C 4 V Threshold V (T0) T vj = 125 C 1.9 V Slope resistance I T = 200...600 A 3.5 mω r T Holding I H T vj = 25 C 20 A Turn-on switching Critical rate of rise of onstate Critical rate of rise of onstate di T /dt cr di T /dt cr T vj = 125 C, I T = 600 A, I GM = 20 A, di G /dt = 20 A/µs f = 200 Hz f = 1 Hz 400 A/µs 600 A/µs Min. on-time t on 80 µs Turn-on delay time t d V D = 0.5 V DRM, T vj = 125 C 1.5 µs Rise time t I T = 600 A, di/dt = 200 A/µs, r 3 µs I GM = 20 A, di G /dt = 20 A/µs, Turn-on energy per pulse E on C S = 1 µf, R S = 10 Ω 0.8 J Turn-off switching Max. controllable turn-off Spike Voltage I TGQM V DSP V DM V DRM, V D = 0.5 V DRM di GQ /dt = 20 A/µs, C S = 1 µf, L S 0.15 µh, RCD Snubber Min. off-time t off 80 µs 600 650 Storage time t S V D = 0.5 V DRM, T vj = 125 C 15 µs Fall time t V DM V DRM, di GQ /dt = 20 A/µs, f 5 µs I TGQ = I TGQM, Turn-on energy per pulse E off R 1.9 J S = 10 Ω, C S = 1 µf, L S = 0.15 µh Peak turn-off gate I GQM RCD Snubber 300 A A V Doc. No. 5SYA1236-00 Jun. 04 page 2 of 5
Gate V GRM 17 V I GRM 20 ma V GR = V GRM Gate trigger V GT T vj = 25 C, 1 V Gate trigger V D = 24 V, R A = 0.1 Ω 2 A I GT Thermal Junction operating temperature T vj 0 125 C Storage temperature range T stg 0 125 C Thermal resistance junction to case Thermal resistance case to heatsink (Double side cooled) Analytical function for transient thermal impedance: R th(jc) Double side cooled 50 K/kW R th(jc)a Anode side cooled 85 K/kW R th(jc)c Cathode side cooled 122 K/kW R th(ch) Single side cooled 16 K/kW R th(ch) Double side cooled 8 K/kW Z thjc (t) = n i= 1 R i(1- e -t/ τ i 1 2 3 4 R i (K/kW) 15.000 5.200 7.500 0.100 τ i (s) 0.4610 0.0950 0.0120 0.0010 i ) Fig. 1 Transient thermal impedance, junction to case. Doc. No. 5SYA1236-00 Jun. 04 page 3 of 5
Fig. 2 General and waveforms with GTO-specific symbols. Doc. No. 5SYA1236-00 Jun. 04 page 4 of 5
Fig. 3 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. Reverse avalanche capability In operation with an antiparallel freewheeling diode, the GTO reverse V R may exceed the rate value V RRM due to stray inductance and diode turn-on spike at high di/dt. The GTO is then driven into reverse avalanche. This condition is not dangerous for the GTO provided avalanche time and are below 10 µs and 1000 A respectively. However, gate must remain negative during this time. Recommendation : V GR = 10 15 V. ABB Switzerland Ltd Doc. No. 5SYA1236-00 Jun. 04 Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)58 586 1419 Fax +41 (0)58 586 1306 Email abbsem@ch.abb.com Internet www.abb.com/semiconductors