V DRM = 25 V I TGQM = 2 A I TSM = 16 ka V T = 1.66 V r T =.57 mω V DClin = 14 V Gate turn-off Thyristor Doc. No. 5SYA125-1 Jun. 4 Patented free-floating silicon technology Low on-state and switching losses Annular gate electrode Industry standard housing Cosmic radiation withstand rating Blocking V DRM Repetitive peak off-state voltage 25 V V GR 2V V RRM Repetitive peak reverse voltage 17 V I DRM Repetitive peak off-state current 3 ma V D = V DRM V GR 2V I RRM Repetitive peak reverse current 5 ma V R = V RRM R GK = V DClink Permanent DC voltage for 1 FIT failure rate 14 V -4 T j 125 C. Ambient cosmic radiation at sea level in open air. Mechanical data (see Fig. 19) F m A Mounting force Acceleration: Device unclamped Device clamped min. max. 17 kn 24 kn 5 m/s 2 2 m/s 2 M Weight.8 kg D S Surface creepage distance 22 mm D a Air strike distance 13 mm
GTO Data On-state I TAVM Max. average on-state current 83 A Half sine wave, T C = 85 C I TRMS Max. RMS on-state current 13 A I TSM Max. peak non-repetitive 16 ka t P = 1 ms T j = 125 C surge current 32 ka t P = 1 ms After surge: I 2 t Limiting load integral 1.28 1 6 A 2 s t P = 1 ms V D = V R = V.51 1 6 A 2 s t P = 1 ms V T On-state voltage 2.8 V I T = 2 A V T Threshold voltage 1.66 V I T = 2-25 A T j = 125 C r T Slope resistance.57 mω I H Holding current 5 A T j = 25 C Gate V GT Gate trigger voltage 1. V V D = 24 V T j = 25 C I GT Gate trigger current 2.5 A R A =.1 Ω V GRM Repetitive peak reverse voltage 17 V I GRM Repetitive peak reverse current 5 ma V G = V GRM Turn-on switching di/dt crit Max. rate of rise of on-state 4 A/µs f = 2Hz I T = 2 A, T j = 125 C current 7 A/µs f = 1Hz I GM = 3 A, di G /dt = 2 A/µs t d Delay time 1.5 µs V D =.5 V DRM T j = 125 C t r Rise time 3.5 µs I T = 2 A di/dt = 2 A/µs t on(min) Min. on-time 8 µs I GM = 3 A di G /dt = 2 A/µs E on Turn-on energy per pulse.75 Ws C S = 4 µf R S = 5 Ω Turn-off switching Max controllable turn-off I TGQM 2 A V DM = V DRM di GQ /dt = 3 A/µs current C S = 4 µf L S.3 µh t s Storage time 22. µs V D = ½ V DRM V DM = V DRM t f Fall time 2. µs T j = 125 C di GQ /dt = 3 A/µs t off(min) Min. off-time 8 µs I TGQ = I TGQM E off Turn-off energy per pulse 3.5 Ws C S = 4 µf R S = 5 Ω I GQM Peak turn-off gate current 7 A L S.3 µh Doc. No. 5SYA125-1 Jun. 4 page 2 of 9
Thermal T j Storage and operating -4...125 C junction temperature range R thjc Thermal resistance 3 K/kW Anode side cooled junction to case 39 K/kW Cathode side cooled 17 K/kW Double side cooled R thch Thermal resistance case to 1 K/kW Single side cooled heat sink 5 K/kW Double side cooled Analytical function for transient thermal impedance: Z thjc (t) = 4 i= 1 R i(1 - e - t / τ i ) i 1 2 3 4 R I (K/kW) 11.7 4.7.64.1 τ i (s).9.26.2.1 Fig. 1 Transient thermal impedance, junction to case. Doc. No. 5SYA125-1 Jun. 4 page 3 of 9
Fig. 2 On-state characteristics Fig. 3 Average on-state power dissipation vs. average on-state current. Fig. 4 Surge current and fusing integral vs. pulse width Doc. No. 5SYA125-1 Jun. 4 page 4 of 9
Fig. 5 Forward blocking voltage vs. gate-cathode resistance. Fig. 6 Static dv/dt capability: Forward blocking voltage vs. neg. gate voltage or gate cathode resistance. Fig. 7 Forwarde gate current vs. forard gate voltage. Fig. 8 Gate trigger current vs. junction temperature Doc. No. 5SYA125-1 Jun. 4 page 5 of 9
Fig. 9 Turn-on energy per pulse vs. on-state current and turn-on voltage. Fig. 1 Turn-on energy per pulse vs. on.-state current and current rise rate Common Test conditions for figures 9, 1 and 11: di G /dt = 2 A/µs C S = 4 µf R S = 5 Ω Tj = 125 C Definition of Turn-on energy: E on 2 µ s = V D ITdt (t =, IG =.1 I Common Test conditions for figures 12, 13 and 15: GM ) Definition of Turn-off energy: E off 4 µ s = V D ITdt ( t =, IT =.9 I TGQ ) Fig. 11 Turn-on energy per pulse vs. on-state current and turn-on voltage. Doc. No. 5SYA125-1 Jun. 4 page 6 of 9
E off [J] 6. V D =.5 V DM 5. di GQ / dt = 3 A/µs C S = 4 µf, R S = 5 Ω 4. T j = 125 C Q GQa Q GQa [µc] 7 6 5 E off [J] 4. 3.5 V D =.75 V DM,V DM = V DRM di GQ /dt = 3 A/ µs 3. 2.5 R S = 5 Ω T j = 125 C C S = 4 µf 3. V DM =V DRM 4 2. C S = 3 µf 2. 1..75 V DRM.5 V DRM 3 2 1.5 1..5 C S = 6 µf. 5 1 15 2 I TGQ [A] 1 Fig. 12 Turn-off energy per pulse vs. turn-off current and peak turn-off voltage. Extracted gate charge vs. turn-off current.. 5 1 15 2 I TGQ [A] Fig. 13 Turn-off energy per pulse vs. turn-off current and snubber capacitance. E off[j] t s [µs] 5 5 I GQM [A] 1 4 4 8 I GQM 3 3 E OFF 6 2 2 t S 4 Fig. 14 Required snubber capacitor vs. max allowable turn-off current. t s [s] 5 I GQM [A] 1 1 1 V D =.5 V DM, V DM = V DRM I TGQ = 2 A,di GQ /dt = 3 A/µs C S = 4 µf, R S = 5 Ω, Tj = 125 C -1 1 2253 4 5 6 7758 9 1 11 12 125 T j [ C] Fig. 15 Turn-off energy per pulse, storage time and peak turn-off gate current vs. junction temperature t s [s] 5 2 I GQM [A] 1 4 t S 8 4 8 3 6 3 6 2 I GQM 4 2 I GQM 4 1 I TGQ = 2 A T j = 125 C 1 2 3 4 5 6 di GQ /dt [A/µs] 2 Fig. 16 Storage time and peak turn-off gate current vs. neg. gate current rise rate. 1 t S di GQ /dt = 3 A/µs T j = 125 C 5 1 15 2 I TGQ [A] Fig. 17 Storage time and peak turn-off gate current vs. turn-off current 2 Doc. No. 5SYA125-1 Jun. 4 page 7 of 9
Fig. 18 General current and voltage waveforms with GTO-specific symbols Fig. 19 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. Doc. No. 5SYA125-1 Jun. 4 page 8 of 9
Reverse avalanche capability In operation with an antiparallel freewheeling diode, the GTO reverse voltage V R may exceed the rate value V RRM due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then driven into reverse avalanche. This condition is not dangerous for the GTO provided avalanche time and current are below 1 µs and 1 A respectively. However, gate voltage must remain negative during this time. Recommendation : V GR = 1 15 V. ABB Semiconductors AG Doc. No. 5SYA125-1 Jun. 4 Fabrikstrasse 3 CH-56 Lenzburg, Switzerland Tel: +41 ()62 888 6419 Fax: +41 ()62 888 636 E-mail info@ch.abb.com Internet www.abbsem.com