Research Activities Centre for Nanotechnology Indian Institute of Technology Guwahati

Research Activities Centre for Nanotechnology Indian Institute of Technology Guwahati

BROADER OBJECTIVES

BROADER OBJECTIVES BROADER OBJECTIVES OF THE CENTRE FOR NANOTECHNOLOGY: To provide a state-of-the-art facility and resources for carrying out research and development activities in the areas of nanotechnology. Training of graduate students, research associates, post-doc fellows and faculty of other institutes/universities in the emerging areas of nanomaterials, nanotechnology and polymer based devices, thereby creating an expert base. Possibility to introduce nanoscience and engineering courses in our undergraduate program. Undertaking of specific projects in close collaborations both within IITG and with the other institutes and R & D organizations. Provide academic platform, leadership, knowledge base and enabling technologies in the fast changing arena of nano-engineering and nano-sciences based on continuous fundamental research, innovations, brain storming and interactions with academia and industry.

! "#$$ Interested faculty members across disciplines are involved through collaborative research projects. The faculty members are mainly PI or Co-PI of the interdisciplinary projects implemented at the Centre for Nanotechnology. Faculty strength is now 11.

% $ & $ Centre has developed modality to foster its growth mainly through external major project support from funding agencies through collaborative efforts.

' ( SL. No Title Principal Investigator/ Coordinator Co-Investigator Sponsoring Agency Year Amount Sanctioned/ Major equipment 1 Nanoscale materials with therapeutic implications Dr. S. S. Ghosh Prof. A. Chattopadhyay Dr. A. Ramesh Dr. B. Bose DBT 2008-2010 Rs.102.62 Lakhs 1. FACS 2. RT PCR 2 Novel Nanoscale Materials: Generation, Characterization, and Device Applications Prof. A. Chattopadhyay User faculty members from other departments DST Rs. 190 Lakhs MPMS 3. Newer Chemical and Physical Methods of Engineering Devices with Nanoscale Functional Components Prof. A. Chattopadhyay None DST under the Swarnajayanti Fellowship Award Rs.92.4 Lakhs AFM

' ( SL. No Title Principal Investigator/ Co-Investigator Sponsoring Amount Sanctioned Coordinator Agency 4 Novel nanoscale materials Prof. S. S. Ghosh Prof. A. DBT Rs. 169 Lakhs targeted towards antimicrobial and anticancer activities Chattopadhyay, Dr. B. Bose 1.Spectroscopy setup 2. Particle size analyzer 5 Controlled growth and studies on semiconductor nanowire heterostructures for solar photovoltaic applications Dr. P K Giri --- BRNS Rs.29 Lakhs 6 Development of fabrication Dr. P. K. Iyar Dr. D. Goswami DST facilities for optoelectronic Prof. A. Srnivasan devices based on molecular, polymeric and composite materials 7 A combined experimental and theoretical study on the instability and patterning of thin liquid crystal films 8 Fabrication and Characterization of Organic thin film transistor Dr. D. Bandyopadhyay DST Dr. D.K > goswami DST

) ( SL. No Title Principal Investigator/ Coordinator Co-Investigator Sponsoring Agency Amount Sanctioned 1 Engineering Nanoscale Materials and their Applications in nanotechnology Prof. A. Chattopadhyay --- DST Completed Rs.2,02Lakhs TEM Support 2. Development of Stimuli Sensitive Nanogels/ Nanoparticles for Controlled Release System Dr. A. Khan None DST Completed Rs.10Lakhs 3. Surface Self-assembly Constructive Nanolithography enroute to polyaniline based Nano Devices Dr. D. Choudhary None DST Rs. 8. Lakhs

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Dr. Harshal Nemade, EEE, IITG Dr. Roy Paily, EEE, IITG Other Faculty Members from EEE

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Fabricated SAW sensor chip ( with reference and sensing channel) Zoom view of IDT structures

Fabricated SAW sensor chip ( with reference and sensing channel) Zoom view of IDT structures

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/ Existing vs. Proposed Schemes Walking Stick ETAs Using ultrasonic sensors Laser Sonic Path Finder Navbelt GPS/Bluetooth Shruthi-Drishti by Media Lab Asia (TTS or TTB) Smart Cane Project Novel Compact (Later integrate into a chip) User friendly for the blind Spatial Information Add on features like edge-detection

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(A) (B) (C) Fig: (A) Typical raman spectra of nanotube Fig: (B) TEM image showing defective nanotube Fig: (C) Visible range Photoluminescence peaks ~2.34 and 2.05 due to defects

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) =$ 7 # )# 8 Control over Bead Movement: Changing viscosity of the solution Propulsion of Macroscopic Object: Lever Rotor

Dipankar Bandyopadhyay Assistant Professor Department of Chemical Engineering International Publications 38 Areas of Expertise Soft-Lithography Micro/Nano Fluidics and MEMS devices Thin Films Micro/Nano Reactors for Solar/Fuel Cells Liquid Crystal Display AFM Nanolithography Electro-Osmotic & Magneto-Hydrodynamic pumps Soft Lithography Adv. Func. Mat. 21, 324, 2011.; Phys. Rev. E 83, 036313, 2011; J. Appl. Phys. 103, 024307, 2008; Microfluidics nanofluidics 2013

Recent Research Electric Field Lithography Magnetic Drug Targeting Micro/Nano Robots Langmuir, 2009, 25, 9108; Royal Society Advances, 1, 238-246, 2011; J. Physical Chem. C 2010,114,2237, Small (accepted) 2013

MEMS for Bio-Detection FLOW GATHER DISCREMINATE SPLIT REDIRECT

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% >-! +1 F 9 ) ) $ 5* $ #? :1 $ ) $ $$ $ A1 $ 9 Figure: Loss-DiVincenzo proposal. Here, S L and S R denotes the spin qubitstates of left and right artificial atoms. The lateral confinement is controlled by top gates. A time-dependent Heisenberg exchange coupling J(t) can be pulsed high by pushing the electron spins closer, generating an appreciable overlap between the neighboring orbital wave functions. A constant magnetic field B is then applied in the z-direction and an electric field E in the x-direction. The resultant Hamiltonian becomes, Assuming low temperature operation that restrict the electrons to the lowest two orbital states, H can be replaced with the effective Heisenberg spin Hamiltonian:

) >8' $,: 2 Controlled-NOT or U XOR (combined with arbitrary single qubit operations), is a universal quantum gate operation which can be used to assemble any quantum algorithm. The following shows how a C-NOT gate operation is constructed from more fundamental operations that can be implemented in our system. Here, U 1/2 SW is called the square root of swap operation which in turn is a two-qubit operation where the spin states the two electrons are swapped. All other terms in the above product are single qubit operations. Now given the Hamiltonian of the system, we can write down its time evolution as i H ( t) dt U = e = h Where, When, exchanges the states of the neighboring spins. But with, we achieve the required 1/ 2 U SW operation. π φ = 2 Now, relaxing the Zeeman term and contribution from electric field, the magnitude of J (exchange coupling coefficient) is evaluated using valence bond theory in molecular physics. Here, the b and d are factors corresponding to the magnetic field strength and inter dot distance. Which means J can be controlled by controlling these parameters to achieve sqrt(swap) operation. Our aim is to derive the form of the expression for J with less approximations and then later to investigate the effect of it s variations with dot architecture.

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Academic growth profile of the Centre for Nanotechnology (2004-2012):

SCI Indexed Journal Publications

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