Date:- 8 th December, 214 Data Sheet Issue:- A1 Phase Control Thyristor Types N3165HA26 and N3165HA28 Development Type No.: NX45HA26 and NX45HA28 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state voltage, (note 1) 26-28 V V DSM Non-repetitive peak off-state voltage, (note 1) 26-28 V V RRM Repetitive peak reverse voltage, (note 1) 26-28 V V RSM Non-repetitive peak reverse voltage, (note 1) 27-29 V UNITS OTHER RATINGS MAXIMUM LIMITS I T(AV)M Maximum average on-state current. T sink =55 C, (note 2) 3165 A I T(AV)M Maximum average on-state current. T sink =85 C, (note 2) 2185 A I T(AV)M Maximum average on-state current. T sink =85 C, (note 3) 185 A I T(RMS) Nominal RMS on-state current. T sink =25 C, (note 2) 623 A I T(d.c.) D.C. on-state current. T sink =25 C, (note 4) 545 A I TSM Peak non-repetitive surge t p =1ms, V rm =.6V RRM, (note 5) 36 ka I TSM2 Peak non-repetitive surge t p =1ms, V rm 1V, (note 5) 4 ka I 2 t I 2 t capacity for fusing t p =1ms, V rm =.6V RRM, (note 5) 6.48 x 1 6 A 2 s I 2 t I 2 t capacity for fusing t p =1ms, V rm 1V, (note 5) 8. x 1 6 A 2 s Maximum rate of rise of on-state current (continuous, 5Hz), (Note 6) 75 (di/dt) cr Maximum rate of rise of on-state current (repetitive, 5Hz, 6s), (Note 6) 15 Maximum rate of rise of on-state current (non-repetitive), (Note 6) 3 UNITS A/µs V RGM Peak reverse gate voltage 5 V P G(AV) Mean forward gate power 5 W P GM Peak forward gate power 3 W V GD Non-trigger gate voltage, (Note 7).25 V T HS Operating temperature range -4 to +125 C T stg Storage temperature range -4 to +15 C Notes: - 1) De-rating factor of.13% per C is applicable for T j below 25 C. 2) Double side cooled, single phase; 5Hz, 18 half-sinewave. 3) Cathode side cooled, single phase; 5Hz, 18 half-sinewave. 4) Double side cooled. 5) Half-sinewave, 125 C T j initial. 6) V D =67% V DRM, I TM =1A, I FG =2A, t r.5µs, T case =125 C. 7) Rated V DRM. Data Sheet. Types N3165HA26 and N3165HA28. Page 1 of 11 December, 214
Phase Control Thyristor Types N3165HA26 and N3165HA28 Characteristics PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS V TM Maximum peak on-state voltage - - 1.3 I TM =25A V V T Threshold voltage - -.93 V r T Slope resistance - -.15 mω dv/dt Critical rate of rise of off-state voltage 1 - - V D =8% V DRM, linear ramp, Gate o/c V/µs I DRM Peak off-state current - - 15 Rated V DRM ma I RRM Peak reverse current - - 15 Rated V RRM ma V GT Gate trigger voltage - - 3. V T j =25 C, V D =1V, I T =3A I GT Gate trigger current - - 3 ma I H Holding current - - 1 T j =25 C ma t gd Gate controlled turn-on delay time - 1. 2. t gt Turn-on time - 2. 3. V D =67%V DRM, I TM =2A, di/dt=1a/µs, I FG =2A, t r =.5µs, T j =25 C Q rr Recovered Charge - 75 8 µc Q ra Recovered Charge, 5% chord - 415 - I TM =2A, t p =2µs, di/dt=1a/µs, µc I rm Reverse recovery current - 19 - V r =1V A t rr Reverse recovery time, 5% chord - 43 - t q R thjk Turn-off time Thermal resistance, junction to heatsink - 25 - - 4 - I TM =2A, t p =2µs, di/dt=1a/µs, V r =1V, V dr =8%V DRM, dv dr /dt=2v/µs I TM =2A, t p =2µs, di/dt=1a/µs, V r =1V, V dr =8%V DRM, dv dr /dt=2v/µs - -.15 Double side cooled K/W - -.171 Anode side cooled K/W - -.276 Cathode Side Cooled K/W F Mounting force 32-4 kn W t Weight - 89 - g µs µs µs Notes: - 1) Unless otherwise indicated T j =125 C. 2) For other clamp forces, please consult factory. Data Sheet. Types N3165HA26 and N3165HA28. Page 2 of 11 December, 214
Phase Control Thyristor Types N3165HA26 and N3165HA28 Notes on Ratings and Characteristics 1. Voltage Grade Table Voltage Grade V DRM V DSM V RRM V RSM V D V R V V DC V 26 26 27 166 28 28 29 179 2. Extension of Voltage Grades This report is applicable to other voltage grades when supply has been agreed by Sales/Production. 3. De-rating Factor A blocking voltage de-rating factor of.13%/ C is applicable to this device for T j below 25 C. 4. Repetitive dv/dt Standard dv/dt is 1V/µs. 5. Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory for assistance. 6. Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 3A/µs at any time during turnon on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not exceed 15A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the total device current including that from any local snubber network. 7. Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 3V is assumed. This gate drive must be applied when using the full di/dt capability of the device. I GM 4A/µs I G t p1 The magnitude of I GM should be between five and ten times I GT, which is shown on page 2. Its duration (t p1 ) should be 2µs or sufficient to allow the anode current to reach ten times I L, whichever is greater. Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The back-porch current I G should remain flowing for the same duration as the anode current and have a magnitude in the order of 1.5 times I GT. Data Sheet. Types N3165HA26 and N3165HA28. Page 3 of 11 December, 214
Phase Control Thyristor Types N3165HA26 and N3165HA28 8. Computer Modelling Parameters I 8.1 Device Dissipation Calculations 2 VT + VT + 4 AV = 2 2 ff ff r T 2 r T W AV and: Where V T =.93V, r T =.15mΩ, R th = Supplementary thermal impedance, see table below and ff = Form factor, see table below. W AV T = R T = T th j max T K Supplementary Thermal Impedance Conduction Angle 3 6 9 12 18 27 d.c. Square wave Double Side Cooled.128.124.121.118.113.18.15 Square wave Cathode Side Cooled.33.298.294.291.285.28.276 Sine wave Double Side Cooled.124.12.117.114.18 Sine wave Cathode Side Cooled.299.293.289.286.279 Form Factors Conduction Angle 3 6 9 12 18 27 d.c. Square wave 3.464 2.449 2 1.732 1.414 1.149 1 Sine wave 3.98 2.778 2.22 1.879 1.57 8.2 Calculating V T using ABCD Coefficients The on-state characteristic I T vs. V T, on page 6 is represented in two ways; (i) the well established V T and r T tangent used for rating purposes and (ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V T in terms of I T given below: V T = A + B ln ( IT ) + C IT + D IT The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The resulting values for V T agree with the true device characteristic over a current range, which is limited to that plotted. 25 C Coefficients 125 C Coefficients A 1.231171533 A.422436333 B -.7192785 B.6452575 C 4.686712E-5 C 1.318397E-4 D 1.6793E-2 D 8.622396E-4 Data Sheet. Types N3165HA26 and N3165HA28. Page 4 of 11 December, 214
Phase Control Thyristor Types N3165HA26 and N3165HA28 8.3 D.C. Thermal Impedance Calculation p = n t = p= 1 r r p 1 e t τ p Where p = 1 to n, n is the number of terms in the series and: t = Duration of heating pulse in seconds. r t = Thermal resistance at time t. r p = Amplitude of p th term. τ p = Time Constant of r th term. The coefficients for this device are shown in the tables below: D.C. Double Side Cooled Term 1 2 3 4 r p 4.97282 1-3 2.77642 1-3 1.87462 1-4 8.66673 1-4 τ p.85875.24539.6422 5.77255 1-3 D.C. Cathode Side Cooled Term 1 2 3 r p 2.2561 1-2 4.53169 1-3 1.4212 1-3 τ p 4.91229.13313 5.55647 1-3 9. Reverse recovery ratings (i) Q ra is based on 5% I rm chord as shown in Fig. 1 Fig. 1 (ii) Q rr is based on a 15µs integration time i.e. (iii) K Factor = t t 1 2 Q rr = 15µ s i rr. dt Data Sheet. Types N3165HA26 and N3165HA28. Page 5 of 11 December, 214
Phase Control Thyristor Types N3165HA26 and N3165HA28 Curves Figure 1 - On-state characteristics of Limit device 1 Figure 2 Transient thermal impedance.1 T j = 25 C T j = 125 C KSC.1 ASC DSC Instantaneous On-state current - I TM (A) 1 Transient thermal impedance (K/W).1.1 1.5 1 1.5 2 2.5 Instantaneous On-state voltage - V TM (V).1 1E-5.1.1.1.1 1 1 1 Time (s) Figure 3 - Gate Characteristics - Trigger Limits Figure 4 - Gate Characteristics - Power Curves 8 25 7 T j =25 C T j =25 C 2 6 Max V G dc Gate Voltage - V G (V) 5 4 3 I GT, V GT Gate Voltage - V G (V) 15 1 Max V G dc P G Max 3W dc 2 125 C 25 C -1 C -4 C Min V G dc 5 P G 5W dc 1 I GD, V GD.2.4.6.8 1 Gate Current - I G (A) Min V G dc 2 4 6 8 1 Gate Current - I G (A) Data Sheet. Types N3165HA26 and N3165HA28. Page 6 of 11 December, 214
Phase Control Thyristor Types N3165HA26 and N3165HA28 Figure 5 Recovered Charge, Q rr Figure 6 Recovered charge, Q ra (5% chord) 1 T j =125 C 1 T j =125 C Recovered charge - Q rr (µc) 1 4A 3A 2A 1A Recovered charge - Q ra, 5% chord (µc) 1 4A 3A 2A 1A 1 1 1 1 1 di/dt (A/µs) 1 1 1 1 1 di/dt (A/µs) Figure 7 Reverse recovery current, I rm Figure 8 Reverse recovery time, t rr (5% chord) 1 1 T j =125 C T j =125 C Reverse recovery current - I rm (A) 1 1 4A 3A 2A 1A Reverse recovery time (5% chord) - t rr (µs) 1 4A 3A 2A 1A 1 1 1 1 1 di/dt (A/µs) 1 1 1 1 1 di/dt (A/µs) Data Sheet. Types N3165HA26 and N3165HA28. Page 7 of 11 December, 214
Phase Control Thyristor Types N3165HA26 and N3165HA28 Figure 9 On-state current vs. Power dissipation Double Side Cooled (Sine wave) Figure 1 On-state current vs. Heatsink temperature - Double Side Cooled (Sine wave) 1 9 8 3 6 9 12 18 15 125 Maximum forward dissipation (W) 7 6 5 4 3 ` Maximum permissable heatsink temperature ( C) 1 75 5 2 1 25 3 6 9 12 18 1 2 3 4 5 Mean forward current (A) (Whole cycle averaged) 1 2 3 4 5 Mean forward current (A) (Whole cycle averaged) Figure 11 On-state current vs. Power dissipation Double Side Cooled (Square wave) Figure 12 On-state current vs. Heatsink temperature - Double Side Cooled (Square wave) 9 15 8 125 7 Maximum forward dissipation (W) 6 5 4 3 2 d.c. 27 18 12 9 6 3 Maximum permissible heatsink temperature ( C) 1 75 5 3 6 9 12 18 27 d.c. 25 1 1 2 3 4 5 6 Mean Forward Current (A) (Whole Cycle Averaged) 1 2 3 4 5 6 Mean Forward Current (A) (Whole Cycle Averaged) Data Sheet. Types N3165HA26 and N3165HA28. Page 8 of 11 December, 214
Phase Control Thyristor Types N3165HA26 and N3165HA28 Figure 13 On-state current vs. Power dissipation Cathode Side Cooled (Sine wave) 4 35 3 6 12 9 18 Figure 14 On-state current vs. Heatsink temperature - Cathode Side Cooled (Sine wave) 15 125 Maximum forward dissipation (W) 3 25 2 15 1 Maximum permissable heatsink temperature ( C) 1 75 5 5 25 3 6 9 12 18 5 1 15 2 25 Mean forward current (A) (Whole cycle averaged) 5 1 15 2 25 Mean forward current (A) (Whole cycle averaged) Figure 15 On-state current vs. Power dissipation Cathode Side Cooled (Square wave) Figure 16 On-state current vs. Heatsink temperature - Cathode Side Cooled (Square wave) 4 15 35 125 Maximum forward dissipation (W) 3 25 2 15 1 d.c. 27 18 12 9 6 3 Maximum permissible heatsink temperature ( C) 1 75 5 3 6 9 12 18 27 d.c. 25 5 5 1 15 2 25 3 Mean Forward Current (A) (Whole Cycle Averaged) 5 1 15 2 25 3 Mean Forward Current (A) (Whole Cycle Averaged) Data Sheet. Types N3165HA26 and N3165HA28. Page 9 of 11 December, 214
Phase Control Thyristor Types N3165HA26 and N3165HA28 Figure 17 Maximum surge and I 2 t Ratings 1 I 2 t: V RRM 1V 1.E+8 T j (initial) = 125 C Total peak half sine surge current (A) 1 1 I 2 t: 6% V RRM I TSM : V RRM 1V I TSM : 6% V RRM 1.E+7 Maximum I 2 t (A 2 s) 1 1 3 5 1 1 5 1 5 1 1.E+6 Duration of surge (ms) Duration of surge (cycles @ 5Hz) Data Sheet. Types N3165HA26 and N3165HA28. Page 1 of 11 December, 214
Phase Control Thyristor Types N3165HA26 and N3165HA28 Outline Drawing & Ordering Information 11A396 ORDERING INFORMATION (Please quote 1 digit code as below) N3165 HA Fixed Type Code Fixed Outline Code Order code: N3165HA26 26V V DRM, V RRM, 26.mm clamp height capsule. Voltage code V DRM /1 26 &28 Fixed turn-off time code IXYS Semiconductor GmbH Edisonstraße 15 D-68623 Lampertheim Tel: +49 626 53- Fax: +49 626 53-627 E-mail: marcom@ixys.de IXYS UK Westcode Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire, SN15 1GE. Tel: +44 ()1249 444524 Fax: +44 ()1249 659448 E-mail: sales@ixysuk.com IXYS Corporation 159 Buckeye Drive Milpitas CA 9535-7418 Tel: +1 (48) 457 9 Fax: +1 (48) 496 67 E-mail: sales@ixys.net www.ixysuk.com www.ixys.com IXYS Long Beach Inc 25 Mira Mar Ave, Long Beach CA 9815 Tel: +1 (562) 296 6584 Fax: +1 (562) 296 6585 E-mail: service@ixyslongbeach.com The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd. IXYS UK Westcode Ltd. In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice. Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. Data Sheet. Types N3165HA26 and N3165HA28. Page 11 of 11 December, 214