SPP8N8C3, SPI8N8C3 SP8N8C3 Cool MOS Power Transistor V DS 8 V Feature R DS(on).65 Ω New revolutionary high voltage technology Ultra low gate charge I D 8 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance P-TO--3-3: Fully isolated package (5 VC; minute) P-TO-3-3 P-TO6 P-TO-3-3 P-TO-3-3 Type Package Ordering Code SPP8N8C3 P-TO-3- Q67-S36 SPI8N8C3 P-TO6 Q67-S63 SP8N8C3 P-TO-3-3 Q67-S37 Marking 8N8C3 8N8C3 8N8C3 Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 5 C T C = C I D SPP_B SP 8 5. 8 ) 5. ) Pulsed drain current, t p limited by T jmax I D puls valanche energy, single pulse E S 3 3 mj I D =.6, V DD =5V valanche energy, repetitive t R limited by T ) jmax E R.. I D =8, V DD =5V valanche current, repetitive t R limited by T jmax I R 8 8 Gate source voltage V GS ± ± V Gate source voltage C (f >Hz) V GS ±3 ±3 Power dissipation, T C = 5 C P tot W Operating and storage temperature T j, T stg -55...+5 C Page 3--
SPP8N8C3, SPI8N8C3 SP8N8C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt 5 V/ns V DS = 6 V, I D = 8, T j = 5 C Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case R thjc - -. K/W Thermal resistance, junction - case, FullPK R thjc_fp - - 3.8 Thermal resistance, junction - ambient, leaded R thj - - 6 Thermal resistance, junction - ambient, FullPK R thj_fp - - 8 Soldering temperature,.6 mm (.63 in.) from case for s T sold - - 6 C Electrical Characteristics, at T j =5 C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V (BR)DSS V GS =V, I D =.5m 8 - - V Drain-Source avalanche V (BR)DS V GS =V, I D =8-87 - breakdown voltage Gate threshold voltage V GS(th) I D =7µ, V GS =V DS. 3 3.9 Zero gate voltage drain current I DSS V DS =8V, V GS =V, µ T j =5 C T j =5 C -.5 - - Gate-source leakage current I GSS V GS =V, V DS =V - - n Drain-source on-state resistance R DS(on) V GS =V, I D =5. Ω T j =5 C T j =5 C -.56.65 -.5 - Gate input resistance R G f=mhz, open drain -.7 - Page 3--
SPP8N8C3, SPI8N8C3 SP8N8C3 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. Transconductance g fs V DS *I D *R DS(on)max, - 5.5 - S I D =5. Input capacitance C iss V GS =V, V DS =5V, - - pf Output capacitance C oss f=mhz - 5 - Reverse transfer capacitance C rss - 5 - Effective output capacitance, 3) energy related Effective output capacitance, ) time related C o(er) V GS =V, V DS =V to 8V - 3.8 - C o(tr) - 7 - Turn-on delay time t d(on) V DD =V, V GS =/V, - 5 - ns Rise time t r I D =8, - 5 - Turn-off delay time t d(off) R G =Ω - 65 75 Fall time t f - 7 Gate Charge Characteristics Gate to source charge Q gs V DD =6V, I D =8 -.6 - nc Gate to drain charge Q gd - - Gate charge total Q g V DD =6V, I D =8, - 5 V GS = to V Gate plateau voltage V (plateau) V DD =6V, I D =8-6 - V Limited only by maximum temperature Repetitve avalanche causes additional power losses that can be calculated as PV =ER*f. 3 Co(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from to 8% V DSS. Co(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. Page 3 3--
SPP8N8C3, SPI8N8C3 SP8N8C3 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous I S T C =5 C - - 8 forward current Inverse diode direct current, I SM - - pulsed Inverse diode forward voltage V SD V GS =V, I F =I S -. V Reverse recovery time t rr V R =6V, I F =I S, - 55 - ns Reverse recovery charge Q rr di F /dt=/µs - 7 - µc Peak reverse recovery current I rrm - - Peak rate of fall of reverse recovery current di rr /dt T j =5 C - 5 - /µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit SPP_B SP SPP_B SP R th.7.7 K/W C th.7.7 Ws/K R th.3.3 C th.6598.6598 R th3.6.6 C th3.993.993 R th.5.89 C th.67.67 R th5.66. C th5.5878.769 R th6..58 C th6.5. P tot (t) T j R th R th,n T case External Heatsink C th C th C th,n T amb Page 3--
SPP8N8C3, SPI8N8C3 SP8N8C3 Power dissipation P tot = f (T C ) Power dissipation FullPK P tot = f (T C ) SPP8N8C3 W 9 W 5 35 Ptot 8 7 Ptot 3 5 6 5 5 3 5 6 8 C 6 6 8 C 5 T C T C 3 Safe operating area I D = f ( V DS ) parameter : D =, T C =5 C Safe operating area FullPK I D = f (V DS ) parameter: D =, T C = 5 C ID ID - tp =. ms tp =. ms tp =. ms tp = ms DC - tp =. ms tp =. ms tp =. ms tp = ms tp = ms DC - V 3 V DS Page 5 - V 3 V DS 3--
SPP8N8C3, SPI8N8C3 SP8N8C3 5 Transient thermal impedance Z thjc = f (t p ) parameter: D = t p /T K/W 6 Transient thermal impedance FullPK Z thjc = f (t p ) parameter: D = t p /t K/W ZthJC - - -3 D =.5 D =. D =. D =.5 D =. D =. single pulse ZthJC - - -3 D =.5 D =. D =. D =.5 D =. D =. single pulse - -7-6 -5 - -3 s - t p 7 Typ. output characteristic I D = f (V DS ); T j =5 C parameter: t p = µs, V GS 6 - -7-6 -5 - -3 - - s t p 8 Typ. output characteristic I D = f (V DS ); T j =5 C parameter: t p = µs, V GS 3 8 V 8V 7V 9 V 6.5V 6V ID 6 6.5V ID 8 7 5.5V 6V 6 5 5V 8 5.5V 6 5V V 8 6 V 6 V DS Page 6.5V 3 V 8 6 V 6 V DS 3--
SPP8N8C3, SPI8N8C3 SP8N8C3 9 Typ. drain-source on resistance R DS(on) =f(i D ) parameter: T j =5 C, V GS R DS(on) Ω V.5V 5V 3 5.5V.5 6V 6.5V Drain-source on-state resistance R DS(on) = f (T j ) parameter : I D = 5., V GS = V RDS(on) 3.6 SPP8N8C3 Ω.8..6..5 V.8. 98% typ 6 8 3 I D Typ. transfer characteristics I D = f ( V GS ); V DS x I D x R DS(on)max parameter: t p = µs 6 5 C -6-6 C 8 T j Typ. gate charge V GS = f (Q Gate ) parameter: I D = 8 pulsed 6 SPP8N8C3 V ID 8 6 VGS, V DS max,8 V DS max 8 6 5 C 8 6 6 8 6 V V GS Page 7 3 5 nc 7 Q Gate 3--
SPP8N8C3, SPI8N8C3 SP8N8C3 3 Forward characteristics of body diode I F = f (V SD ) parameter: T j, tp = µs SPP8N8C3 valanche SO I R = f (t R ) par.: T j 5 C 8 6 IF IR 5 T j = 5 C typ T j = 5 C typ 3 T j(strt) =5 C T j = 5 C (98%) T j = 5 C (98%) T j(strt) =5 C -..8..6. V 3 V SD 5 valanche energy E S = f (T j ) par.: I D =.6, V DD = 5 V 35 mj -3 - - µs t R 6 Drain-source breakdown voltage V (BR)DSS = f (T j ) 98 SPP8N8C3 V 9 ES 5 V(BR)DSS 9 9 88 86 5 8 8 8 78 5 76 7 5 5 75 C 5 7-6 - 6 C 8 T j T j Page 8 3--
SPP8N8C3, SPI8N8C3 SP8N8C3 7 valanche power losses P R = f (f ) parameter: E R =.mj W 6 8 Typ. capacitances C = f (V DS ) parameter: V GS =V, f= MHz pf 3 C iss PR C C oss 8 C rss 6 5 Hz 6 f - 3 5 6 V 8 V DS 9 Typ. C oss stored energy E oss =f(v DS ) µj 9 7 Eoss 6 5 3 3 5 6 V 8 V DS Page 9 3--
SPP8N8C3, SPI8N8C3 SP8N8C3 Definition of diodes switching characteristics Page 3--
SPP8N8C3, SPI8N8C3 SP8N8C3 P-TO--3- ±. 3.7 ±. B.7±.3. 5.38±.6 ±..8.5 9.98 ±.8 C 5.3 ±.9 3.5 ±.5 3x.75 ±..5 ±..5±..7 ±. x.5.5 M B C ll metal surfaces tin plated, except area of cut. Metal surface min. x=7.5, y=.3 Page 3--
SPP8N8C3, SPI8N8C3 SP8N8C3 P-TO-6-3- (I -PK) ±....3 8.5 ) ±.3 B.7..6 ±.3 7.55 ).5 9.5 ±. C ±...55 3.5 ±.5...5.5..5 ±. 3 x.75 ±. x.5.5 M B C ) Typical Metal surface min. X = 7.5, Y = 6.9 ll metal surfaces tin plated, except area of cut. P-TO--3-3 (FullPK) Please refer to mounting instructions (application note N-TO-3-3-) Page 3--
SPP8N8C3, SPI8N8C3 SP8N8C3 Published by Infineon Technologies G, Bereichs Kommunikation St.-Martin-Strasse 53, D-85 München Infineon Technologies G 999 ll Rights Reserved. ttention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 3 3--
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