SPW47N6C3 Cool MOS Power Transistor V DS @ T jmax 65 V Feature R DS(on).7 Ω New revolutionary high voltage technology Worldwide best R DS(on) in TO 47 I D 47 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances P-TO47 Type Package Ordering Code SPW47N6C3 P-TO47 Q674-S449 Marking 47N6C3 Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 5 C T C = C I D 47 3 Pulsed drain current, t p limited by T jmax I D puls 4 valanche energy, single pulse I D =, V DD = 5 V E S 8 mj valanche energy, repetitive t R limited by T ) jmax E R I D =, V DD = 5 V valanche current, repetitive t R limited by T jmax I R Reverse diode dv/dt dv/dt 6 V/ns I S =47, V DS =48V, T j =5 C Gate source voltage static V GS ± V Gate source voltage C (f >Hz) V GS ±3 Power dissipation, T C = 5 C P tot 45 W Operating and storage temperature T j, T stg -55... +5 C Page 3-9-7
SPW47N6C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt 5 V/ns V DS = 48 V, I D = 47, T j = 5 C Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case R thjc - -.3 K/W Thermal resistance, junction - ambient, leaded R thj - - 6 Soldering temperature,.6 mm (.63 in.) from case for s T sold - - 6 C Electrical Characteristics, at Tj=5 C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V (BR)DSS V GS =V, I D =.5m 6 - - V Drain-Source avalanche V (BR)DS V GS =V, I D = - 7 - breakdown voltage Gate threshold voltage V GS(th) I D =7µΑ, V GS =V DS. 3 3.9 Zero gate voltage drain current I DSS V DS =6V, V GS =V, µ T j =5 C, T j =5 C -.5 5 - - 5 Gate-source leakage current I GSS V GS =3V, V DS =V - - n Drain-source on-state resistance R DS(on) V GS =V, I D =3, Ω T j =5 C T j =5 C -.6.7 -.6 - Gate input resistance R G f=mhz, open Drain -.6 - Page 3-9-7
SPW47N6C3 Electrical Characteristics, at T j = 5 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Transconductance g fs V DS *I D *R DS(on)max, - 4 - S I D =3 Input capacitance C iss V GS =V, V DS =5V, - 68 - pf Output capacitance C oss f=mhz - - Reverse transfer capacitance C rss - 45 - Effective output capacitance, ) energy related Effective output capacitance, 3) time related C o(er) V GS =V, V DS =V to 48V - 93 - pf C o(tr) - 4 - Turn-on delay time t d(on) V DD =38V, V GS =/3V, - 8 - ns Rise time t r I D =47, R G =.8Ω, - 7 - Turn-off delay time t d(off) T j =5-65 Fall time t f - 8 Gate Charge Characteristics Gate to source charge Q gs V DD =35V, I D =47-4 - nc Gate to drain charge Q gd - - Gate charge total Q g V DD =35V, I D =47, - 5 3 V GS = to V Gate plateau voltage V (plateau) V DD =35V, I D =47-5.5 - V Repetitve avalanche causes additional power losses that can be calculated as PV =E R *f. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from to 8% V DSS. 3 Co(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. Page 3 3-9-7
SPW47N6C3 Electrical Characteristics, at T j = 5 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous I S T C =5 C - - 47 forward current Inverse diode direct current, I SM - - 4 pulsed Inverse diode forward voltage V SD V GS =V, I F =I S -. V Reverse recovery time t rr V R =35V, I F =I S, - 58 - ns Reverse recovery charge Q rr di F /dt=/µs - 3 - µc Peak reverse recovery current I rrm - 73 - Peak rate of fall of reverse di rr /dt - 9 - /µs recovery current Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit typ. typ. Thermal resistance Thermal capacitance R th.689 K/W C th.8 Ws/K R th.547 C th.4 R th3. C th3.545 R th4.54 C th4.4 R th5.7 C th5.5 R th6.36 C th6.58 P tot (t) T j R th R th,n T case External Heatsink C th C th C th,n T amb Page 4 3-9-7
SPW47N6C3 Power dissipation P tot = f (T C ) 5 SPW47N6C3 W Safe operating area I D = f ( V DS ) parameter : D =, T C =5 C 3 4 35 Ptot 3 ID 5 5 5 - tp =. ms tp =. ms tp =. ms tp = ms DC 4 6 8 C 6 T C - V 3 V DS 3 Transient thermal impedance Z thjc = f (t p ) parameter: D = t p /T K/W 4 Typ. output characteristic I D = f (V DS ); T j =5 C parameter: t p = µs, V GS 8 V 7.5V ZthJC - ID 6 7V 6.5V - -3 D =.5 D =. D =. D =.5 D =. D =. single pulse 8 4 6V 5.5V 5V -4-7 -6-5 -4-3 - s t p Page 5 4.5V 4 8 6 V 6 V DS 3-9-7
SPW47N6C3 5 Typ. output characteristic I D = f (V DS ); T j =5 C parameter: t p = µs, V GS 6 Typ. drain-source on resistance R DS(on) =f(i D ) parameter: T j =5 C, V GS 6 V 6.5V.5 Ω 4V 4.5V 5V ID 6V R DS(on).4.35 5.5V 8 5.5V.3 6 5V.5 6V 4 4.5V 4V..5 6.5V V 4 8 6 V 6 7 Drain-source on-state resistance R DS(on) = f (T j ) parameter : I D = 47, V GS = V.38 SPW47N6C3 Ω.3 V DS. 4 6 8 6 I D 8 Typ. transfer characteristics I D = f ( V GS ); V DS x I D x R DS(on)max parameter: t p = µs 8 5 C RDS(on).8.4. ID 6.6..8.4 98% typ 8 4 5 C -6-6 C 8 T j Page 6 3 4 5 6 7 8 V V GS 3-9-7
SPW47N6C3 9 Typ. gate charge V GS = f (Q Gate ) parameter: I D = 47 pulsed 6 SPW47N6C3 V Forward characteristics of body diode I F = f (V SD ) parameter: T j, tp = µs 3 SPW47N6C3 VGS. V DS max.8 V DS max IF 8 6 4 T j = 5 C typ T j = 5 C typ T j = 5 C (98%) T j = 5 C (98%) 4 8 6 4 8 3 nc 4 Q Gate Typ. drain current slope di/dt = f(r G ), inductive load, T j = 5 C par.: V DS =38V, V GS =/+3V, I D =47 6 /µs.4.8..6.4 V 3 V SD Typ. switching time t = f (R G ), inductive load, T j =5 C par.: V DS =38V, V GS =/+3V, I D =47 3 ns td(off) di/dt 4 3 di/dt(on) t td(on) tf tr di/dt(off) 4 6 8 4 6 Ω R G Page 7 4 6 8 4 6 Ω R G 3-9-7
SPW47N6C3 3 Typ. switching time t = f (I D ), inductive load, T j =5 C par.: V DS =38V, V GS =/+3V, R G =.8Ω 3 ns td(off) 4 Typ. drain source voltage slope dv/dt = f(r G ), inductive load, T j = 5 C par.: V DS =38V, V GS =/+3V, I D =47 8 V/ns 6 dv/dt(off) t td(on) dv/dt 5 tf 4 tr 3 dv/dt(on) - 3 5 I D 5 Typ. switching losses E = f (I D ), inductive load, T j =5 C par.: V DS =38V, V GS =/+3V, R G =.8Ω 4 6 8 4 6 Ω R G 6 Typ. switching losses E = f(r G ), inductive load, T j =5 C par.: V DS =38V, V GS =/+3V, I D =47.4 *) Eon includes SDP6S6 diode commutation losses. mws.4 *) Eon includes SDP6S6 diode commutation losses. mws E Eoff E.8 Eoff..6 Eon*..4 Eon*. 3 5 I D Page 8 4 6 8 4 6 Ω R G 3-9-7
SPW47N6C3 7 valanche SO I R = f (t R ) par.: T j 5 C 8 valanche energy E S = f (T j ) par.: I D =, V DD = 5 V 8 mj 6 4 IR 4 8 ES 8 6 6 4 4-3 - - µs 4 t R 5 5 75 C 5 T j 9 Drain-source breakdown voltage V (BR)DSS = f (T j ) 7 SPW47N6C3 valanche power losses P R = f (f ) parameter: E R =mj 5 V - V(BR)DSS 68 66 64 PV 3 6 6 58 56 54-6 - 6 C 8 T j 4 5 Hz 6 f Page 9 3-9-7
SPW47N6C3 Typ. capacitances C = f (V DS ) parameter: V GS =V, f= MHz 5 pf 4 Ciss Typ. C oss stored energy E oss =f(v DS ) 3 µj C Eoss 3 Coss 5 Crss 5 3 4 V 6 V DS 3 4 V 6 V DS Definition of diodes switching characteristics Page 3-9-7
SPW47N6C3 P-TO-47-3- 5.9 6.35 ø3.6.3 5.3 9.9 6.7 4.37.9 5.94 D 7 5.97 x.7 4..75 D.4 6.43..76 MX..4 +.5.9 5.46 General tolerance unless otherwise specified: Leadframe parts: ±.5 Package parts: ±. Page 3-9-7
SPW47N6C3 Published by Infineon Technologies G, Bereichs Kommunikation St.-Martin-Strasse 53, D-854 München Infineon Technologies G 999 ll Rights Reserved. ttention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 3-9-7