SPPN8C SPN8C Cool MOS Power Transistor V DS 8 V Feature R DS(on). Ω New revolutionary high voltage technology Ultra low gate charge I D Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance PG-TO---: Fully isolated package ( VC; minute) PG-TO-- PG-TO P-TO-- Type Package Ordering Code SPPN8C PG-TO Q67-S SPN8C PG-TO-- SP6 Marking N8C N8C Maximum Ratings Parameter Symbol Value Unit SPP Continuous drain current T C = C I D T C = C. SP ). ) Pulsed drain current, t p limited by T jmax I D puls valanche energy, single pulse E S 7 7 mj I D =.8, V DD =V valanche energy, repetitive t R limited by T ) jmax E R.. I D =, V DD =V valanche current, repetitive t R limited by T jmax I R Gate source voltage V GS ± ± V Gate source voltage C (f >Hz) V GS ± ± Power dissipation, T C = C P tot 6 8 W Operating and storage temperature T j, T stg -...+ C Rev.. Page -8-
SPPN8C SPN8C Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt V/ns V DS = 6 V, I D =, T j = C Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case R thjc - - K/W Thermal resistance, junction - case, FullPK R thjc_fp - - Thermal resistance, junction - ambient, leaded R thj - - 6 Thermal resistance, junction - ambient, FullPK R thj_fp - - 8 Soldering temperature, wavesoldering.6 mm (.6 in.) from case for s ) T sold - - 6 C Electrical Characteristics, at T j = C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V (BR)DSS V GS =V, I D =.m 8 - - V Drain-Source avalanche V (BR)DS V GS =V, I D = - 87 - breakdown voltage Gate threshold voltage V GS(th) I D =µ, V GS =V DS..9 Zero gate voltage drain current I DSS V DS =8V, V GS =V, µ T j = C T j = C - -. - Gate-source leakage current I GSS V GS =V, V DS =V - - n Drain-source on-state resistance R DS(on) V GS =V, I D =. T j = C T j = C - -.. - Ω Gate input resistance R G f=mhz, open drain -.7 - Rev.. Page -8-
SPPN8C SPN8C Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. Transconductance g fs V DS *I D *R DS(on)max, - - S I D =. Input capacitance C iss V GS =V, V DS =V, - 7 - pf Output capacitance C oss f=mhz - - Reverse transfer capacitance C rss - - Effective output capacitance, ) C o(er) V GS =V, -.6 - energy related V DS =V to 8V Effective output capacitance, ) C o(tr) -.7 - time related Turn-on delay time t d(on) V DD =V, V GS =/V, - - ns Rise time t r I D =, - - Turn-off delay time t d(off) R G =Ω - 6 7 Fall time t f - 6 Gate Charge Characteristics Gate to source charge Q gs V DD =6V, I D = -. - nc Gate to drain charge Q gd - - Gate charge total Q g V DD =6V, I D =, - 6 V GS = to V Gate plateau voltage V (plateau) V DD =6V, I D = - 6 - V Limited only by maximum temperature Repetitve avalanche causes additional power losses that can be calculated as PV =E R *f. Soldering temperature for TO-6: C, reflow Co(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from to 8% V DSS. Co(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. Rev.. Page -8-
SPPN8C SPN8C Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous I S T C = C - - forward current Inverse diode direct current, pulsed I SM - - Inverse diode forward voltage V SD V GS =V, I F =I S -. V Reverse recovery time t rr V R =6V, I F =I S, - - ns Reverse recovery charge Q rr di F /dt=/µs - - µc Peak reverse recovery current I rrm - - Peak rate of fall of reverse recovery current di rr /dt T j = C - - /µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit SPP SP SPP SP R th.. K/W C th.869.869 Ws/K R th.6.6 C th.6.6 R th.. C th.7.7 R th..7 C th.. R th.. C th..669 R th6..7 C th6.6. P tot (t) T j R th R th,n Tcase External Heatsink C th C th C th,n T amb Rev.. Page -8-
SPPN8C SPN8C Power dissipation P tot = f (T C ) Power dissipation FullPK P tot = f (T C ) 7 SPPN8C W 6 W Ptot Ptot 6 8 C 6 6 8 C 6 T C T C Safe operating area I D = f ( V DS ) parameter : D =, T C = C Safe operating area FullPK I D = f (V DS ) parameter: D =, T C = C ID ID - tp =. ms tp =. ms tp =. ms tp = ms DC - tp =. ms tp =. ms tp =. ms tp = ms tp = ms DC - V V DS - V V DS Rev.. Page -8-
SPPN8C SPN8C Transient thermal impedance Z thjc = f (t p ) parameter: D = t p /T K/W 6 Transient thermal impedance FullPK Z thjc = f (t p ) parameter: D = t p /t K/W ZthJC ZthJC - - D =. D =. D =. D =. D =. D =. single pulse - - D =. D =. D =. D =. D =. D =. single pulse - -7-6 - - - s - t p 7 Typ. output characteristic I D = f (V DS ); T j = C parameter: t p = µs, V GS - -7-6 - - - - - s t p 8 Typ. output characteristic I D = f (V DS ); T j = C parameter: t p = µs, V GS 6. 9 V 8V 7V.. V 6.V 6V ID 8 7 6.V ID..V 6 6V. V.V..V V V 8 6 V 6 V DS V. 8 6 V 6 V DS Rev.. Page 6-8-
SPPN8C SPN8C 9 Typ. drain-source on resistance R DS(on) =f(i D ) parameter: T j = C, V GS Ω Drain-source on-state resistance R DS(on) = f (T j ) parameter : I D =., V GS = V SPPN8C 7. Ω R DS(on) 9 V.V V RDS(on) 6.. 8. 7 6.V 6V V... 98% typ 6. -6-6 C 8 I D T j Typ. transfer characteristics I D = f ( V GS ); V DS x I D x R DS(on)max parameter: t p = µs C Typ. gate charge V GS = f (Q Gate ) parameter: I D = pulsed 6 SPPN8C V ID 9 8 VGS, V DS max,8 V DS max 7 6 C 8 6 6 8 6 V V GS 8 6 8 nc Q Gate Rev.. Page 7-8-
SPPN8C SPN8C Forward characteristics of body diode I F = f (V SD ) parameter: T j, tp = µs SPPN8C valanche SO I R = f (t R ) par.: T j C IF IR. T j = C typ T j = C typ T j = C (98%) T j = C (98%).. T j(strt) = C T j(strt) = C -..8..6. V V SD valanche energy E S = f (T j ) par.: I D =.8, V DD = V 8 mj - - - µs t R 6 Drain-source breakdown voltage V (BR)DSS = f (T j ) 98 SPPN8C V 9 ES V(BR)DSS 9 9 88 86 8 8 6 8 8 78 76 7 7 C 7-6 - 6 C 8 T j T j Rev.. Page 8-8-
SPPN8C SPN8C 7 valanche power losses P R = f (f ) parameter: E R =.mj W 8 Typ. capacitances C = f (V DS ) parameter: V GS =V, f= MHz pf PR 8 7 6 C C iss C oss C rss Hz 6 f 6 V 8 V DS 9 Typ. C oss stored energy E oss =f(v DS ). µj. Eoss... 6 V 8 V DS Rev.. Page 9-8-
SPPN8C SPN8C Definition of diodes switching characteristics Rev.. Page -8-
SPPN8C SPN8C PG-TO--, PG-TO-- Rev.. Page -8-
SPPN8C SPN8C PG-TO-- (FullPK) Rev.. Page -8-
SPPN8C SPN8C Published by Infineon Technologies G, Bereichs Kommunikation St.-Martin-Strasse, D-8 München Infineon Technologies G 999 ll Rights Reserved. ttention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.. Page -8-