Unconventional Nano-patterning. Peilin Chen

Unconventional Nano-patterning Peilin Chen

Reference

Outlines History of patterning Traditional Nano-patterning Unconventional Nano-patterning

Ancient Patterning "This is the Elks' land". A greeting at the mouth of Dalbergsaa, Southern Dal. It seems that the carvings of Northern Scandinavia's including Kola Peninsula are the oldest. Large figures of ritual animals characterise the Mesolithic period mostly before c.4200 BC

Evolution of Writing Around 4000 BC Man scratches the surface of moist clay tablet with a bronze or bone tool. Around 3000 BC The Egyptians developed a form of writing on papyrus scrolls scribes used thin reed brushes or reed pens. 1300 BC The Romans have been developing form of writing, that they scribed into thin sheets of wax using metal stylus.

Writing by Inks Writing Brush ~2000 Ys Quill Pen ~1000 Ys

Chinese Replication 868 1041 and 1048

Western Replication 1543-1610

Building a computer

First Integrated Circuit "What we didn't realize then was that the integrated circuit would reduce the cost of electronic functions by a factor of a million to one, nothing had ever done that for anything before" - Jack Kilby 2000 Nobel Prize 1958 Texas Instruments

Moore s Law

Tool Cost

Methods of Photolithography

Photolithography Process

Limit of Photolithography r = 1.22 x λ/(2 x N.A.) N.A. = n x sin(θ)

Diffraction Limit Resolution = K x λ/(n.a.) Depth of Focus = λ/(n.a.) 2 K = 0.61

Photolithography

Water Immersion Lithography Resolution (R) = K x λ/(n.a.) K = 0.25, NA ~1.4, λ = 193 R = 35 nm Air n= 1.0003 Water n = 1.437

Electron Microscope

TEM Image

E-Beam Lithography

E-beam Writer Better than 10 nm lines over 4 inch wafer

E-beam Writer 理

E-beam Projection

EUV System

Next Generation Lithographic Techniques

Nanoimprint Lithography Mold PMMA Substrate Imprint Remove Mold RIE Evaporation Lift-off

Step and Flash Imprint Lithography

NX-2000, Nanoimprintor, Nanonex Nanoimprintors

Imprinting Result

Challenges Mask Fabrication (1:1) Lift-off process Resist Mask Design

Writing

Writing Principles

Introduction To Scanning Probe Microscopy

Scanning Tunneling Microscopy

Polymer Gold atom

Atomic Force Microscopy

E Coli Protein Nanotubes DNA

Scanning Probe Family

STM Lithography Resist: Thiol

STM Lithography

Oxidation Lithography

AFM Lithography

Substitution Lithography

Dip-Pen Lithography

Dip-pen Lithography

Dip-Pen Array

Ultimate STM Lithography

Single Atomic Manipulation

Single Molecular Vibrational Spectra by STM

Building Molecule Step by Step

Atomic Manipulation

Laser Writing

Laser Writing A chip integrating PCR and solid phase extraction A 48-channel CE chip

Two Photon Writing

DNA Nanosphere Sperm

Near-Field Lithography

Direct Writing 3D

Direct Writing

Inkjet Printer

Inkjet Printing

Self-Assembled Pattern

Self-Assembly of Block-Copolymer

Possible phase separated morphologies in PD-PS block copolymer systems.

Block Copolymer as Nano-Materials

Block Copolymer as Templates

Self-Assembly of Block-Copolymer

1926 Goldschmidt proposed atoms could be considered as packing in solids as hard spheres

A single layer of spheres is closestpacked with a HEXAGONAL coordination of each sphere

TWO different types of HOLES (so-called INTERSTITIAL sites) OCTAHEDRAL (O) holes with 6 nearest sphere neighbors TETRAHEDRAL (T ) holes with 4 nearest sphere neighbors

The third layer lies in indentations directly in line (eclipsed) with the 1st layer Layer ordering may be described as ABA The third layer lies in the alternative indentations leaving it staggered with respect to both previous layers Layer ordering may be described as ABC

Features of Close-Packing Coordination Number = 12 74% of space is occupied 2 atoms in the unit cell (0, 0, 0) (2/3, 1 /3, 1 /2) 4 atoms in the unit cell l (0, 0, 0) (0, 1 /2, 1 /2) (1 /2, 0, 1 /2) (1 /2, 1 /2, 0)

74% of space is occupied

NON-CLOSE-PACKED structure 68% of space is occupied 8 Nearest Neighbours at 0.87a 6 Next-Nearest Neighbours at 1a

Packing Fraction FCC : 0.74 BCC: 0.68 SC : 0.52 Diamond: 0.34

Nanosphere

Driving Force

Phase Diagram

Nanosphere Lithography Single layer Metal deposition Lift-off Double layer Metal deposition Lift-off

D r r D r 3 1 = D a = 3 1 1 3 2 3 D r = D a = 3 1 1 3 Array Dimension Array Dimension ~1/4 D ~1/7 D

Optical Image of PS Template 800 nm PS

Nanosphere Lithography 350 nm 550 nm 400 nm 880 nm

Single Layer Templates 200 nm 280 nm 550 nm

Double Layer Templates 200 nm 400 nm 550 nm

Anodic Alumina

Ordered Anodic Alumina

AAO Templates 160 140 30 V 50 V Distance (nm) 120 100 80 60 Y = 51.8 + 1.54 * V 40 20 0 20 30 40 50 60 Voltage (V) 40 V 60 V

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