EE 330 Lecture 33. Basic amplifier architectures Common Emitter/Source Common Collector/Drain Common Base/Gate. Basic Amplifiers

Similar documents
EE 330 Lecture 31. Basic amplifier architectures. Common Emitter/Source Common Collector/Drain Common Base/Gate

EE 330 Lecture 30. Basic amplifier architectures

EE 330 Lecture 31. Basic Amplifier Analysis High-Gain Amplifiers Current Source Biasing (just introduction)

ECEG 351 Electronics II Spring 2017

EE 434 Lecture 16. Small signal model Small signal applications in amplifier analysis and design

Lecture 10 OUTLINE. Reading: Chapter EE105 Spring 2008 Lecture 10, Slide 1 Prof. Wu, UC Berkeley

Lab 4: Frequency Response of CG and CD Amplifiers.

Lecture 36: MOSFET Common Drain (Source Follower) Amplifier.

Lecture 21. REMINDERS Review session: Fri.11/9,3 5PMin306Soda in 306 (HP Auditorium) Midterm #2 (Thursday 11/15, 3:30 5PM in Sibley Auditorium)

ECEG 351 Electronics II Spring 2017

EE 435. Lecture 10: Current Mirror Op Amps

EECE488: Analog CMOS Integrated Circuit Design. Introduction and Background

EECE488: Analog CMOS Integrated Circuit Design. Set 2: Background

EE5900 Spring Lecture 4 IC interconnect modeling methods Zhuo Feng

EE 435. Lecture 2: Basic Op Amp Design. - Single Stage Low Gain Op Amps

ECEN326: Electronic Circuits Fall 2017

Analysis and Design of Analog Integrated Circuits Lecture 7. Differential Amplifiers

A new small-signal RF MOSFET model

EE 435 Lecture 13. Cascaded Amplifiers. -- Two-Stage Op Amp Design

EE 330 Lecture 20. Bipolar Device Modeling

Comparison of bulk driven, floating gate and sub threshold methods in designing of a typical amplifier

EE 435 Lecture 13. Two-Stage Op Amp Design

EE 330 Lecture 25. Amplifier Biasing (precursor) Two-Port Amplifier Model

EE 435. Lecture 18. Two-Stage Op Amp with LHP Zero Loop Gain - Breaking the Loop

EE 330 Lecture 22. Small Signal Modelling Operating Points for Amplifier Applications Amplification with Transistor Circuits

EE 330 Lecture 33. Cascaded Amplifiers High-Gain Amplifiers Current Source Biasing

ECE 342 Electronic Circuits. Lecture 6 MOS Transistors

Chapter 11 Frequency Response. EE105 - Spring 2007 Microelectronic Devices and Circuits. High Frequency Roll-off of Amplifier. Gain Roll-off Thru C L

VI. Transistor amplifiers: Biasing and Small Signal Model

Biasing the CE Amplifier

EE 435. Lecture 2: Basic Op Amp Design. - Single Stage Low Gain Op Amps

Lecture 25 ANNOUNCEMENTS. Reminder: Prof. Liu s office hour is cancelled on Tuesday 12/4 OUTLINE. General considerations Benefits of negative feedback

At point G V = = = = = = RB B B. IN RB f

SOME USEFUL NETWORK THEOREMS

Mixed-Signal IC Design Notes set 1: Quick Summary of Device Models

Polytech Montpellier MEA4 M2 EEA Systèmes Microélectroniques. Analog IC Design

EE 330 Lecture 31. Current Source Biasing Current Sources and Mirrors

1.7 Delta-Star Transformation

Introduction: the common and the differential mode components of two voltages. differential mode component: v d = v 1 - v 2 common mode component:

ECEN326: Electronic Circuits Fall 2017

Chapter 28: Alternating Current

Chapter 2. Small-Signal Model Parameter Extraction Method

About the definition of parameters and regimes of active two-port networks with variable loads on the basis of projective geometry

One-Port Networks. One-Port. Network

Section J8b: FET Low Frequency Response

Lecture 18 - The Bipolar Junction Transistor (II) Regimes of Operation April 19, 2001

A we connect it in series with a capacitor of capacitance C 160 F. C The circuit thus carries an alternating sinusoidal current i.

Chapter 10: Sinusoidal Steady-State Analysis

1. Review of Circuit Theory Concepts

Lecture 18 - The Bipolar Junction Transistor (II) Regimes of Operation. November 10, 2005

Transistors. Lesson #9 Chapter 4. BME 372 Electronics I J.Schesser

Lecture 13 MOSFET as an amplifier with an introduction to MOSFET small-signal model and small-signal schematics. Lena Peterson

Lecture 8: 09/18/03 A.R. Neureuther Version Date 09/14/03 EECS 42 Introduction Digital Electronics Andrew R. Neureuther

Electronics II. Midterm #1

Chapter 10: Sinusoidal Steady-State Analysis

Chapter 9 Bipolar Junction Transistor

CHAPTER 3 QUADRUPLEX WINDING REDUNDANCY BRUSHLESS DC MOTOR

HY:433 Σχεδίαση Αναλογικών/Μεικτών και Υψισυχνών Κυκλωμάτων

Differential Amplifiers (Ch. 10)

V DD. M 1 M 2 V i2. V o2 R 1 R 2 C C

EE 435. Lecture 3 Spring Design Space Exploration --with applications to single-stage amplifier design

Electric Circuit Theory

EE 330 Lecture 25. Amplifier Biasing (precursor) Two-Port Amplifier Model

EE 230 Lecture 20. Nonlinear Op Amp Applications. The Comparator Nonlinear Analysis Methods

! Dynamic Characteristics. " Delay

PH 222-2C Fall Electromagnetic Oscillations and Alternating Current. Lectures 18-19

Transistor amplifiers: Biasing and Small Signal Model

Lecture 15: Differential Pairs (Part 2)

Quantum Chemistry Exam 2 Take-home Solutions

Thevenin equivalent circuits

SUPERIOR-ORDER CURVATURE-CORRECTED PROGRAMMABLE VOLTAGE REFERENCES

I D based Two-Stage Amplifier Design

EEC 118 Lecture #2: MOSFET Structure and Basic Operation. Rajeevan Amirtharajah University of California, Davis Jeff Parkhurst Intel Corporation

Chapter 13 Small-Signal Modeling and Linear Amplification

Design of Sliding Mode Stabilizer for Wind Turbine Generator using Dynamic Compensation Observer Technique

EE 330 Lecture 16. Devices in Semiconductor Processes. MOS Transistors

Electronic Devices and Circuits Lecture 15 - Digital Circuits: Inverter Basics - Outline Announcements. = total current; I D

ECE315 / ECE515 Lecture 11 Date:

AVOIDING PITFALLS IN MEASUREMENT UNCERTAINTY ANALYSIS

Polytech Montpellier MEA M2 EEA Systèmes Microélectroniques. Analog IC Design

320-amp-models.tex Page 1 ECE 320. Amplifier Models. ECE Linear Active Circuit Design

Mixed Signal IC Design Notes set 4: Broadband Design Techniques

EE415/515 Fundamentals of Semiconductor Devices Fall 2012

Lecture #26. Small Signal Model

Studying Large Scale System Using Decentralized Control

Electrical Circuits I Lecture 8

Delay and Power Estimation

DESIGN OF MECHANICAL SYSTEMS HAVING MAXIMALLY FLAT RESPONSE AT LOW FREQUENCIES

The Indefinite Admittance Matrix

ECE 4430 Analog Integrated Circuits and Systems

An Improved Logical Effort Model and Framework Applied to Optimal Sizing of Circuits Operating in Multiple Supply Voltage Regimes

EE 230 Lecture 33. Nonlinear Circuits and Nonlinear Devices. Diode BJT MOSFET

EE 435. Lecture 3 Spring Design Space Exploration --with applications to single-stage amplifier design

Lecture 14 - Digital Circuits (III) CMOS. April 1, 2003

ECE 546 Lecture 10 MOS Transistors

Study Notes on Network Theorems for GATE 2017

The design and simulation of magneto-rheological damper for. automobile suspension

DEPARTMENT OF ECE UNIT VII BIASING & STABILIZATION AMPLIFIER:

COS 424: Interacting with Data. Written Exercises

IGBT Designer s Manual

Transcription:

33 Lecture 33 asic aplifier architectures oon itter/source oon ollector/drain oon ase/gate asic plifiers nalysis, Operation, and Desin

xa 3 Friday pril 3

eview Previous Lecture Two-Port quivalents of Interconnected Two-ports i i y y 2 2 y 2 y 22 2 XX I I2 22 2 2 22 2 Two Port (Norton) i v H-paraeters (Hybrid Paraeters) h i h2 v2 h2 i h22 v 2 i2 v2 Linear Two Port I I 2 IN OUT 2 2 Two Port (Thevenin) pply, open 2 to et but short 2 to et IN pply 2, open to et but short to et OUT

eview Previous Lecture ircuit analysis steps Lare sinal Q-point analysis Open cap, short inductors ssue operation reions for active devices eplace each nonlinear device by its siplified piecewise linear odel opute Q-point: node voltaes and device currents erify assued reion Sall sinal D analysis Short D -source, open D I-source Short couplin caps eplace each nonlinear device by its ss odel Perfor standard linear analysis as in 2

eview Previous Lecture asic plifier Structures D G S Sall Sinal Transistor Models as 3-terinal Devices MOS oon Input Output JT oon Input Output oon Source or oon itter oon Gate or oon ase oon Drain or oon ollector S G D G S D D G S Objectives in Study of asic plifier Structures. Obtain key properties of each basic aplifier 2. Develop ethod of desinin aplifiers with specific characteristics usin basic aplifier structures

eview Previous Lecture The three basic aplifier types for both MOS and bipolar processes oon itter oon Source oon ase oon Gate oon ollector oon Drain Will focus on the perforance of the bipolar structures and then obtain perforance of the MOS structures by observation

Two-Port Models of asic plifiers widely used for nalysis and Desin of plifier ircuits Methods of Obtainin plifier Two-Port Network i in v2 o v 2. TST : i TST Method (considered in last lecture) 2. Write : 2 equations in standard for = i + IN 2 = i + 2 2 O 3. Thevenin-Norton Transforations 4. d Hoc pproaches ny of these ethods can be used to obtain the two-port odel

test : itest Method for Obtainin Two-Port plifier Paraeters SUMMY fro PIOUS LTU test i in v2 o v 2 out-test out-test test test i TST i i in v2 in v2 o o v v 2 2 i TST test in test test test i test i If Unilateral = out-test i in v2 o v 2 test out-test test

Will now develop two-port odel for each of the three basic aplifiers and look at one widely used application of each oon itter oon Source oon ase oon Gate oon ollector oon Drain

onsider oon itter/oon Source Two-port Models oon itter oon Source oon ase oon Gate oon ollector oon Drain Will focus on ipolar ircuit since MOS counterpart is a special case obtained by settin π =

asic /S plifier Structures OUT OUT M IN IN oon itter plifier oon Source plifier OUT OUT IN M IN oon itter plifier oon Source plifier an include or exclude and in two-port odels (of course they are different circuits) The and S aplifiers are theselves two-ports!

Two-port odel for oon itter onfiuration oon itter be π be O? i in v o 2 { i, and }

Two-Port Models of asic plifiers widely used for nalysis and Desin of plifier ircuits Methods of Obtainin plifier Two-Port Network i in v2 o v 2. TST : i TST Method 2. Write : 2 equations in standard for = i + IN 2 = i + 2 2 O 3. Thevenin-Norton Transforations 4. d Hoc pproaches

Two-port odel for oon itter onfiuration oon itter be π be O i in v o 2 y Thevenin : Norton Transforations in

Two-Port Models of asic plifiers widely used for nalysis and Desin of plifier ircuits Methods of Obtainin plifier Two-Port Network i in v2 o v 2. TST : i TST ethod 2. Write : 2 equations in standard for = i + IN 2 = i + 2 2 O 3. Thevenin-Norton Transforations 4. d Hoc pproaches

Two-port odel for oon itter onfiuration lternately, by TST : i TST Method To obtain in i test oon itter test be π O be i in v o 2 in in i test test { in, and }

Two-port odel for oon itter onfiuration lternately, by TST : i TST Method To obtain test be π O be out-test oon itter out-test test i in v o 2 outtest test { in, and }

Two-port odel for oon itter onfiuration lternately, by TST To obtain : i TST Method i test be π be O te oon itter i test i test test test i in v o 2 { in, and }

Two-port odel for oon itter onfiuration i in v o 2 oon itter In ters of sall sinal odel paraeters: in In ters of operatin point and odel paraeters: t i F F I Q t IQ haracteristics: Input ipedance is id-rane oltae Gain is Lare and Invertin Output ipedance is lare Unilateral Widely used to build voltae aplifiers

oon itter onfiuration onsider the followin application DD (this will also enerate a two-port odel for this application) out in oon itter inc Two-port includin in o in v out out Two-Port Model in out= o// in out in = r = i n π = // out o

oon itter onfiuration onsider the followin application (this will also enerate a two-port odel for this application) This circuit can also be analyzed directly without usin 2-port odel for confiuration oon itter inc out in be π be O out in = out out= = r in π in

oon itter onfiuration onsider the followin application (this is also a two-port odel for this application) Sall sinal paraeter doain oon itter inc Operatin point and odel paraeter doain out = r in π haracteristics: Input ipedance is id-rane oltae Gain is lare and Invertin Output ipedance is id-rane Unilateral Widely used as a voltae aplifier out in I = I Q t Q t

oon Source/ oon itter onfiurations in in t I Q oon itter oon Source in In ters of operatin point and odel paraeters: F F F in IDQ IDQ t IQ 2 2 F Q Q haracteristics: Input ipedance is id-rane (infinite for MOS) oltae Gain is Lare and Invertin Output ipedance is lare Unilateral Widely used to build voltae aplifiers

oon Source/oon itter onfiuration D oon itter inc out out in = r in I Q π t = I Q t D D in haracteristics: out Input ipedance is id-rane (infinite for MOS) oltae Gain is Lare and Invertin Output ipedance is id-rane Unilateral Widely used as a voltae aplifier out oon Source inc D in In ters of operatin point and odel paraeters: D D D 2I DQ D Q D D D

onsider oon ollector/oon Drain Two-port Models oon itter oon Source oon ase oon Gate oon ollector oon Drain Will focus on ipolar ircuit since MOS counterpart is a special case obtained by settin π =

Two-port odel for oon ollector onfiuration be π be O oon ollector? i ox ix vr2 v 2 { ix,, r and X }

Two-Port Models of asic plifiers widely used for nalysis and Desin of plifier ircuits Methods of Obtainin plifier Two-Port Network i in v2 o v 2. TST : i TST Method 2. Write : 2 equations in standard for = i + IN 2 = i + 2 2 O 3. Thevenin-Norton Transforations 4. d Hoc pproaches

Two-port odel for oon ollector onfiuration i oon ollector be π be O 2 pplyin KL at the input and output node, obtain i 2 i 2 o 2 These can be rewritten as i r π 2 2 2 o o Standard Two-Port plifier epresentation i ix v2 i v ix 2 i ox 2 : 2 equations in standard for 2 2 ox It thus follows that ix =r π Or= X o o

Two-port odel for oon ollector onfiuration i be π be O 2 oon ollector i Two-port oon ollector Model ox ix v 2 vr2 ix =r π Or= X o o

oon ollector onfiuration onsider the followin application DD Deterine in,, and (this is not askin for a two-port odel for the application in and defined for no additional load on output, o defined for short-circuit input) in out IN oon ollector OUT SS in i ox ix vr2 v 2 out if ox o = = ox o o o = i + X in ix vr v in X = = + + + + + π o r o = r r +β o o in π π

oon ollector onfiuration onsider the followin application (this is not askin for a two-port odel for the application, in and defined for no additional load on output, o defined for short-circuit input -) in DD out IN oon ollector OUT lternately, this circuit can also be analyzed directly SS i in π O OUT in out in in out out in I Q I + Q t i i in in in out in out in r + o o in= rπ π β o

oon ollector onfiuration onsider the followin application (this is not askin for a two-port odel for the application, in and defined for no additional load on output, o defined for short-circuit input -) in DD out IN oon ollector OUT SS i in π O OUT π O i out in OUT To obtain, set in i out out out out = o o

oon ollector onfiuration onsider the followin application (this is not askin for a two-port odel for the application, in and defined for no additional load on output, o defined for short-circuit input -) in DD out IN oon ollector OUT SS out = IQ I + r + o o Q t o o in= rπ π β o Question: Why are these not the two-port paraeters of this circuit? in defined for open-circuit on output instead of shortcircuit (see previous slide : -2 slides) r i ox ix v 2 vr2

oon ollector onfiuration DD For this application OUT (this is not a two-port odel for this application) IN in out oon ollector Sall sinal paraeter doain if IQ I + Q t SS Operatin point and odel paraeter doain I Q t o r +β in π in I Q t β + haracteristics: I Q t I t Q Output ipedance is low is positive and near Input ipedance is very lare Widely used as a buffer Not copletely unilateral but output-input transconductance (or r ) is sall and effects are enerally neliible thouh anitude sae as

oon ollector/oon Drain onfiurations For these /D applications (not two-port odels for these applications) DD OUT in out o r +β in π + IQ I + Q t I in Q t I IN Q t β if Output ipedance is low is positive and near Input ipedance is very lare oon ollector I Q t I t Q OUT in G D S SS S in out IN S + In ters of operatin point and odel paraeters: in S S S oon Drain if 2IDQ S if 2I DQ Q 2IDQ S+Q S 2I DQ S Q +2I 2I Widely used as a buffer Not copletely unilateral but output-input transconductance is sall Q S Q Q DQ S DQ S D

onsider oon ase/oon Gate Two-port Models oon itter oon Source oon ase oon Gate oon ollector oon Drain Will focus on ipolar ircuit since MOS counterpart is a special case obtained by settin π =

Two-port odel for oon ase onfiuration be π be O oon ase? i ox ix vr2 v 2 { ix,, r and X }

Two-Port Models of asic plifiers widely used for nalysis and Desin of plifier ircuits Methods of Obtainin plifier Two-Port Network i in v2 o v 2. TST : i TST Method 2. Write : 2 equations in standard for = i + IN 2 = i + 2 2 O 3. Thevenin-Norton Transforations 4. d Hoc pproaches

Two-port odel for oon ase onfiuration i be π be O 2 oon ase Fro KL i 2 i 2 2 These can be rewritten as 2 i 2 2 It thus follows that: ix Or i : 2 equations in standard for Standard For for plifier Two-Port in v2 o v 2 = i + IN 2 = i + 2 2 O ox

Two-port odel for oon ase onfiuration i be π be O 2 oon ase Two-port oon ase Model i ox in vr2 v 2 ix Or ox

oon ase onfiuration onsider the followin application (this is not askin for a two-port odel for this application - in and defined for no load on output, o defined for short-circuit input ) DD out IN OUT in oon ase in i ox ix vr2 v 2 out = + X in ix+ r out in= = i ix in= - i i // out X out r +

oon ase onfiuration onsider the followin application (this is not askin for a two-port odel for this application in and defined for no load on output, o defined for short-circuit input ) DD out IN OUT in oon ase lternately, this circuit can also be analyzed directly i out in be π be O 2 y KL at the output node, obtain + = + in y KL at the eitter node, obtain i = + + in out //r out out = + + in= + π + + π

oon ase pplication DD OUT (this is not a two-port odel for this application) out IN in oon ase in <<r out haracteristics: in I Q t t I Q <<r Output ipedance is id-rane is lare and positive (equal in a to that to ) Input ipedance is very low Not copletely unilateral but output-input transconductance is sall out

oon ase/oon Gate pplication (these are not a two-port odels) DD DD OUT D OUT out IN G GG D S OUT IN D in oon ase in oon Gate in <<r out D in out <<r D D I Q t in In ters of operatin point and odel paraeters: I << Q F t 2IDQ D I out in 2I Q Q Q DQ out I << DQ D D haracteristics: Output ipedance is id-rane is lare and positive (equal in a to that to ) Input ipedance is very low Not copletely unilateral but output-input transconductance is sall

oon itter with itter esistor onfiuration DD out out in in be π be O y KL at two non-rounded nodes - out in in- out in - + = - + + + + + out π in π π

oon itter with itter esistor onfiuration DD out out in in be π be O - It can also be shown that out r +β in π Nearly unilateral (is unilateral if o =)

oon itter with itter esistor onfiuration DD out - in r +β in π out (this is not a two-port odel) haracteristics: nalysis would siplify if were set to in odel Gain can be accurately controlled with resistor ratios Useful for reasonably accurate low ains Input ipedance is hih

(not two-port odels for the four basic structures)

an use these equations only when sall sinal circuit is XTLY like that shown!!

asic plifier Structures. oon itter/oon Source 2. oon ollector/oon Drain 3. oon ase/oon Gate 4. oon itter with / oon Source with S 5. ascode (actually : or S:G cascade) 6. Darlinton (special : or D:S cascade) Will be discussed later The first 4 are ost popular

Why are we focusin on these basic circuits?. So that we can develop analytical skills 2. So that we can desin a circuit 3. So that we can et the insiht needed to desin a circuit Which is the ost iportant?

nd of Lecture 33