NANO-ISSX Technical Specifications. Technical Specifications

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Page: 1 of 8 Solar MEMS Technologies S.L. Sun Sensor NANO-ISSX/c Features Two orthogonal axes sun sensor Different fields of view version: 60,25,15 and 5 Low power consumption: 5 mw Wide operating voltage range: 3,3 12 V Industrial temperature range: - 40 to 85 C Compact design: 18 18 3,85 mm (L W H) Low weight: < 5 g Surface mountable Applications Renewable energies Automotive Air conditioning systems Domotic applications Attitude control systems for vehicles Sun tracking NANO-ISSX sun sensor allows the measurement of the sun ray incident vector by providing its projection angles in orthogonal reference axes by means of a simple calculation procedure. The field of view is achieved by the geometrical dimensions of the design. Its compact pattern, ease integration and low power consumption, makes it a suitable tool for renewable energies or low cost intelligent sensing applications. NANO-ISSX is available in two formats: one designed for PCB surface mounting and one with a disconnectable type wire-to-board crimp style connector (NANO-ISSX-c).

Page: 2 of 8 1. Specifications 1.1. General Specifications Parameter NANO-60 NANO-25 NANO-15 NANO-5 Unit Sensor type 2 axes 2 axes 2 axes 2 axes Orthogonal Field of view (FOV) 120x120 50x50 30x30 10x10 º Average consumption 5 5 5 5 mw Dimensions (L W H) 18 18 3,85 18 18 5,15 18 18 6,35 18 18 10,15 mm Weight <10 <10 <10 <10 g Table 1. General Specifications 1.2. Absolute maximum ratings Symbol Parameter Minimum value Maximum value VDD Supply voltage 0 14 V TOP Operating temperature -40 85 ºC Table 2. Absolute maximum ratings Unit 1.3. Recommended operating conditions Symbol Parameter Minimum value Maximum value VDD Supply voltage 3 12 V Vr Supply voltage ripple 0 100 mvpp TOP Operating temperature -40 85 ºC Table 3. Recommended operation conditions Unit

Page: 3 of 8 2. Sun Sensor NANO-ISSX NANO-ISSX measures the incidence angles of a sun ray based on a quadrant photodetector device. The sunlight is guided to the detector through a window above the sensor. Depending on the angle of incidence, the sunlight induces photocurrents in the four quadrants of the detector. window sun ray 2.1. NANO-ISSX parameters 2.1.1. Reference Axes microsensor and quadrants Fig 1. Microsensor of NANO-ISSX Fig 2. Front view NANO-ISS60 reference system Fig 3. Isometric view NANO-ISS60 reference system Z axis is perpendicular to the sensor base plane. 2.1.2. Incident angle calculation The angle x and angle y specify the angular position of the incident sun ray inside the field of view of the NANO-ISSX sensor according to references given in Fig. 5. z Sun ray y Angle y Angle x x VPH1 VPH4 VPH2 VPH3 y x Fig 4. Reference for angles calculation

Page: 4 of 8 Angles X and Y of the incidence ray can be obtained with a simple set of equations involving the four photodiode voltages generated by the sensor (V PH1, V PH2, V PH3,V PH4 ): X = V + V 1 PH 3 PH 4 X = V + V F 2 PH1 PH 2 X X = X X + X 2 1 2 1 ( ) Angle X = arctg C F X Y = V + V 1 PH1 PH 4 Y = V + V 2 PH 2 PH 3 F Y Y = Y Y + Y 2 1 2 1 ( ) Angle Y = arctg C F Y Type Value NANO-ISS60 1,889 NANO-ISS25 0,477 NANO-ISS15 0,273 NANO-ISS5 0,125 Table 4. Values of the parameter C according to the type of sensor NANO-ISSX The accuracy of the measurements depends on the integration and the calibration processes. The NANO-ISSX sun sensors are not calibrated.

Page: 5 of 8 3. Electrical interface Fig 5. NANO-ISSX pin configuration Pin Symbol Description 1 V PH3 Lower-right photodiode voltage (3) 2 V PH4 Upper-right photodiode voltage (4) 3 GND Ground 4 V cc Power supply 5 V PH1 Upper-left photodiode voltage (1) 6 V PH2 Lower-left photodiode voltage (2) Table 5. Pin description

Page: 6 of 8 4. Mechanical drawings 4.1. NANO-ISS60 Fig 6. Top view Fig 7. Bottom view Fig 8. Side view Fig 9. Recommended land pattern Notes: (a) Dimensions are in millimetres. (b) Tolerances are non-cumulative: ±0.05 mm for all centers. (c) The dimensions above should serve as a guideline. Contact Solar MEMS Technologies for details. Dimensions of NANO-ISS25, NANO-ISS15 and NANO-ISS5 versions are the same as NANO-ISS60 except height. See table 1.

Page: 7 of 8 4.2. NANO-ISS60-c Fig 10. Top view Fig 11. Bottom view Fig 12. Side view Notes: (a) Dimensions are in millimetres. (b) Tolerances are non-cumulative: ±0.05 mm for all centers. (c) The dimensions above should serve as a guideline. Contact Solar MEMS Technologies for details. (d) SH connector supplied is wire-to-board 1 mm pinch crimp style. Dimensions of NANO-ISS25, NANO-ISS15 and NANO-ISS5 versions are the same as NANO-ISS60 except height. See table 1.

Page: 8 of 8 5. Warranty Solar MEMS Technologies S.L. warrants the NANO-ISSX sun sensor to the original consumer purchaser any product that is determined to be defective for the following terms will be repaired, or replaced. The warranty is one year from date of purchase. The product in question must be sent to Solar MEMS Technologies S.L. (address is shown below) within the warranty period and the original consumer purchaser must comply with the following conditions, to be eligible for repair or replacement under this warranty: The product must not have been modified or altered in any way by an unauthorized source. The product must have been installed in accordance with the installation instructions and the technical specifications. This limited warranty does not cover: Damage due to improper installation; Accidental or intentional damages; Misuse, abuse, corrosion, or neglect; Product impaired by severe conditions, such as excessive wind, ice, storms, lightning strikes or other natural occurrences; Damage due to improper packaging on return shipment. Any and all labor charges for troubleshooting, removal or replacement of the product are not covered by this warranty and will not be honored by Solar MEMS Technologies S.L. Return shipping to Solar MEMS Technologies S.L. must be pre-paid by the original consumer purchaser. Solar MEMS Technologies S.L. will pay the normal return shipping charges to original consumer purchaser within the European Union countries only. Address of Solar MEMS Technologies S.L. Solar MEMS Technologies S.L. Parque Científico Tecnológico Cartuja 93. Tecnoincubadora Marie Curie. C/ Leonardo da Vinci 18, Planta 1, Módulo 2. C.P. 41092, Seville, Spain. E-mail: smt@solar-mems.com Phone: (+34) 954 460 113 Solar MEMS has a system of quality and environment according to the ISO 9001 and ISO 14001 standards, provided by the certification company Applus CTC.