CMMX- CMMX- PPLTION General purpose Inverters, Servo mplifiers OUTLINE DRWING & CIRCUIT DIGRM 11. 118.1 11 ±. 99 9. 8.. 11.66 1.8.1 6.9. 8..6 1 9 8 6 1 9 8 6 1.. 6 8 9 6 61.8 (.) 1.9 16.9 R(1~) S(~6) T(9~1) 1 6 8 9 1 11 1 1 1 1 16 1 18 19 1 1 18.8 8..1.. P(~) (~) B(~) GB().8 1.19.8 9.8 6. 6. LBEL 66.. 81.6 8.8 89.9 9.1 96.91.96 9.6 91. 9.8 9 8 6 1.8 19.8..... CES... 1 CIB (-phase Converter + -phase Inverter + Brake) Flatbase Type / Insulated Package / Copper base plate RoHS Directive compliant -φ. MOUNTING HOLES 9 ±.. 6. 1 1 GuP(9) EuP(8) GuN() GvP() EvP() U(1~1) GvN() GwP(9) EwP(8) (1~18) GwN() TH1(9) TH(8) W(1~) N(~8) (6~61) Es(1) * Use both terminals (R/S/T/P/N//B//U//W) to the external connection. CIRCUIT DIGRM NTC () (.81) 1.1.6 (.) 1. TERMINL t =.8 1. 1. Division of Dimension. to over to 6 over 6 to over to 1 over 1 to Dimensions in mm φ. φ. φ.1 SECTION Pin positions with tolerance Tolerance ±. ±. ±. ±.8 ±1. φ..
CMMX- BSOLUTE MXIMUM RTINGS (Tj = C, unless otherwise specified) INERTER PRT Rating DC, TC = 1 C Collector current RM Pulse (Note. ) CES Collector-emitter voltage G-E Short 1 GES Gate-emitter voltage C-E Short ± P Maximum collector dissipation TC = C (Note. 1, ) 9 W IE (Note.) Emitter current TC = C IERM(Note.) (Free wheeling diode forward current) Pulse (Note. ) BRKE PRT CES Collector-emitter voltage G-E Short GES Gate-emitter voltage C-E Short DC, TC = 11 C Collector current RM Pulse P Maximum collector dissipation TC = C RRM(Note.) Repetitive peak reverse voltage IF (Note.) TC = C Forward current Pulse IFRM(Note.) (Note. ) (Note. 1, ) (Note. ) CONERTER PRT RRM Repetitive peak reverse voltage Ea Recommended C input voltage IO DC output current -phase full wave rectifying, TC = 1 C IFSM Surge forward current The sine half wave 1 cycle peak value, f = 6Hz, non-repetitive I t Current square time alue for one cycle of surge current MODULE Tj Junction temperature Tstg Storage temperature iso Isolation voltage Terminals to base plate, f = 6Hz, C 1 min Base plate flatness On the centerline X, Y (Note. 8) orque Mounting M screw Weight (Typical) Note. 8: The base plate flatness measurement points are in the following figure. Rating 1 ± 6 1 Rating 16 1 Rating ~ +1 ~ +1 ± ~ +1. ~. W S C μm N m g.
CMMX- ELECTRL and THERML RESISTNCE CHRCTERISTS (Tj = C, unless otherwise specified) INERTER PRT ES GE(th) IGES CEsat Cies Coes Cres QG td(on) tr td(off) tf trr (Note.) Qrr (Note.) EC(Note.) Rth(j-c)Q Rth(j-c) RG BRKE PRT ES GE(th) IGES CEsat F(Note.) Rth(j-c)Q Rth(j-c) RG Collector cut-off current CE = CES, G-E Short Gate-emitter threshold voltage =.m, CE = 1 Gate leakage current GE = GES, C-E Short Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Gate charge Turn-on delay time Rise time Turn-off delay time Fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance (Junction to case) Internal gate resistance External gate resistance Collector-emitter saturation voltage Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance QG ate charge IRRM(Note.) Repetitive peak reverse current Forward voltage Thermal resistance (Junction to case) Internal gate resistance External gate resistance =, GE = 1 =, GE = 1 CE = 1 G-E Short CC = 6, =, GE = 1 CC = 6, = GE = ±1, RG = 9.1Ω (IE = ) IE =, G-E Short IE =, G-E Short per IGBT per free wheeling diode TC = C, per switch CONERTER PRT IRRM F Rth(j-c) Collector cut off current CE = CES, GE = Gate-emitter threshold voltage = m, CE = 1 Gate leakage current GE = GES, CE = =, GE = 1 =, GE = 1 CE = 1 GE = CC = 6, =, GE = 1 R = RRM IF = IF = per IGBT per Clamp diode TC = C Tj = C Tj = 1 C Chip Tj = C Tj = 1 C Chip Tj = C Tj = 1 C Chip Tj = C Tj = 1 C Chip 1 6 8...6. 1.9 6...1 18 1 6 1..6..16...69 8.9 89 1 6 8...6. 1.9.1..1 1 1.6..16..8 1.1 1 1 Repetitive peak reverse current Forward voltage Thermal resistance (Junction to case) R = RRM, Tj = 1 C IF = per Diode 1. 1.6. m μ nf nc ns μc K/W Ω m μ nf nc m K/W Ω m K/W.
CMMX- NTC THERMISTOR PRT R ΔR/R B(/) P MODULE Rth(c- ) Zero power resistance Deviation of resistance B constant Power dissipation Contact thermal resistance (Case to in ) TC = C TC = 1 C, R1 = 9Ω pproximate by equation TC = C (Note. ).8..1. +.8 1 Note.1: Case temperature (TC), heat sink temperature (T ) measured point is just under the chips. (Refer to the figure of the chip location.) : Typical value is measured by using thermally conductive grease of λ =.9W/(m K). : IE, IERM, EC, trr, Qrr and Err represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). IF, IFRM, F, RRM and IRRM represent ratings and characteristics of the Clamp diode of Brake part. : Pulse width and repetition rate should be such that the device junction temperature (Tj) dose not exceed Tjmax rating. : Junction temperature (Tj) should not increase beyond 1 C. 6: Pulse width and repetition rate should be such as to cause negligible temperature rise. (Refer to the figure of the test circuit for CEsat and EC) R : 1 1 B(/) = In( )/( ) R T T R: resistance at absolute temperature T [K]; T = [ C]+.1 = 98.1 [K] R: resistance at absolute temperature T [K]; T = [ C]+.1 =.1 [K] Chip Location (Top view) (6) () 8. 9. 1.9 6 8 9 6 61 Thermal grease applied per 1 module.. 8. (11.) (11) 6..6. 8. 89. 9.9 98. 1. 1 9 8 6 1 9 8 6 1 C R R N C S R N C T R N C R R P C S R P C T R P 1 6 8 9 1 11 1 1 1 1 16 1 18 19 1 9... T B r T UP r T D i r T P B r WP r Th D UP i T D i D UN r T WP i T P D UN i N r WN r D i D i N WN 6..1. 81. 8. 91. 96. (Note. ) 9 8 6 LBEL SIDE kω % K mw.1 K/W Dimensions in mm (tolerance: ±1mm) 19.1. (Tr/UP, Tr/P, Tr/WP) 8.6 (Di/Br, Th)..6 Each mark points the center position of each chip. Tr**: IGBT, Di**: FWDi (DiBr: Clamp diode), CR**: Converter diode, Th: NTC thermistor.
CMMX- P side Inverter part Tr N side Inverter part Tr (example of U arm) (example of U arm) (GvP-EvP, GwP-EwP, GvN-Es, GwN-Es, GB-Es) (GvP-EvP, GwP-EwP, GvN-Es, GwN-Es, GB-Es) GE = 1 GuP +GE GE GE RG EuP GuN GuP EuP GuN GE rm U U P side Inverter part Di N side Inverter part Di (example of U arm) (example of U arm) (GvP-EvP, GwP-EwP, GvN-Es, GwN-Es, GB-Es) (GvP-EvP, GwP-EwP, GvN-Es, GwN-Es, GB-Es) IE Load CE IE + GuP CC GE td(on) EuP GE = 1 GuN GuP GuN tr td(off) U CEsat test circuit EuP U EC/F test circuit 9% % 9% tf IE 1% IE GE = 1 GB Irr Br Tr (GuP-EuP, GvP-EvP, GwP-EwP, GuN-Es, GvN-Es, GwN-Es) IF GB Br Di (GuP-EuP, GvP-EvP, GwP-EwP, GuN-, GvN-, GwN-) trr B B 1/ Irr Qrr = 1/ Irr trr t Switching time test circuit and waveforms trr, Qrr test waveform.
CMMX- PERFORMNCE CURES COLLECTOR CURRENT () COLLECTOR-EMITTER STURTION OLTGE CE(sat) () CPCITNCE (nf) 6 OUTPUT CHRCTERISTS GE = 1 Tj = C 1 1 11 1 1 9 1 6 8 9 1 COLLECTOR-EMITTER OLTGE CE () COLLECTOR-EMITTER STURTION OLTGE CHRCTERISTS 1 Tj = C 8 6 = = = 1 6 8 1 1 1 16 18 GTE-EMITTER OLTGE GE () CPCITNCE CHRCTERISTS 1 1 1 Cies 1 Coes 1 1 Cres 1 1 1 1 1 1 1 COLLECTOR-EMITTER STURTION OLTGE CE(sat) ().. 1. 1 GE = 1. Tj = C Tj = 1 C 1 6 1 1 1 Tj = C Tj = 1 C 1. 1 1.... 1 1 COLLECTOR-EMITTER STURTION OLTGE CHRCTERISTS COLLECTOR CURRENT () FREE WHEELING DIODE FORWRD CHRCTERISTS EMITTER-COLLECTOR OLTGE EC () HLF-BRIDGE SWITCHING CHRCTERISTS EMITTER CURRENT IE () SWITCHING TIME (ns) tf td(off) td(on) tr Conditions: 1 1 CC = 6 GE = ±1 RG = 9.1Ω Tj = 1 C 1 1 1 1 1 COLLECTOR-EMITTER OLTGE CE () COLLECTOR CURRENT (). 6
CMMX- SWITCHING TIME (ns) SWITCHING LOSS (mj/pulse) GTE-EMITTER OLTGE GE () 1 1 td(on) tr Conditions: 1 1 CC = 6 GE = ±1 = Tj = 1 C 1 1 1 1 1 1 1 1 1 Conditions: CC = 6 GE = ±1, IE = Tj = 1 C tf td(off) Eon Eoff Err 1 1 1 1 1 1 1 1 HLF-BRIDGE SWITCHING CHRCTERISTS HLF-BRIDGE SWITCHING CHRCTERISTS = GTE RESISTNCE RG (Ω) GTE RESISTNCE RG (Ω) GTE CHRGE CHRCTERISTS CC = CC = 6 1 1 SWITCHING LOSS (mj/pulse) lrr (), trr (ns) NORMLIZED TRNSIENT THERML IMPEDNCE Zth(j c) 1 1 1 Conditions: CC = 6 GE = ±1 RG = 9.1Ω Tj = 1 C 1 1 1 1 1 1 Eoff Eon Err 1 trr Irr Conditions: 1 1 CC = 6 GE = ±1 RG = 9.1Ω Tj = C 1 1 1 1 1 1 1 HLF-BRIDGE SWITCHING CHRCTERISTS COLLECTOR CURRENT () EMITTER CURRENT IE () REERSE RECOERY CHRCTERISTS OF FREE WHEELING DIODE 1 1 Single pulse, TC = C EMITTER CURRENT IE () TRNSIENT THERML IMPEDNCE CHRCTERISTS 1 Inverter IGBT part : Per unit base = Rth(j c) =.K/W Inverter FWDi part : Per unit base = Rth(j c) =.69K/W Converter-Di part : Per unit base = Rth(j c) =.K/W Brake IGBT part : Per unit base = Rth(j c) =.8K/W Brake Clamp-Di part : Per unit base = Rth(j c) = 1.1K/W 1 1 1 1 1 1 1 1 1 1 GTE CHRGE QG (nc) TIME (s).
CMMX- FORWRD CURRENT lf () FORWRD CURRENT IF () 1 1 1 Tj = C Tj = 1 C 1. 1. 1.. 1 1 1 RECTIFIER DIODE FORWRD CHRCTERISTS (TYPL) Converter part FORWRD OLTGE F () CLMP DIODE FORWRD CHRCTERISTS (TYPL) Brake part Tj = C Tj = 1 C 1. 1 1.... FORWRD OLTGE F () COLLECTOR-EMITTER STURTION OLTGE CE(sat) ().. 1. 1 COLLECTOR-EMITTER STURTION OLTGE CHRCTERISTS (TYPL) Brake part GE = 1. Tj = C Tj = 1 C 1 1 COLLECTOR CURRENT (). 8