IXFT50N60X IXFQ50N60X IXFH50N60X

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Transcription:

Preliminary Technical Information X-Class HiPerFET TM Power MOFET IXFT5N6X IXFQ5N6X IXFH5N6X V I 25 R (on) = 6V = 5A 73m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic iode TO-268 (IXFT) G (Tab) TO-3P (IXFQ) ymbol Test Conditions Maximum Ratings V = 25 C to 5 C 6 V V GR = 25 C to 5 C, R G = M 6 V Continuous 3 V M Transient 4 V I 25 = 25 C 5 A I M = 25 C, Pulse Width Limited by M 2 A I A = 25 C 2 A E A = 25 C 2 J dv/dt I I M, V V, 5 C 5 V/ns P = 25 C 66 W -55... 5 C M 5 C T stg -55... 5 C T L Maximum Lead Temperature for oldering 3 C T OL.6 mm (.62in.) from Case for s 26 C M d Mounting Torque (TO-247 & TO-3P).3 / Nm/lb.in Weight TO-268 4. g TO-3P 5.5 g TO-247 6. g ymbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise pecified) Min. Typ. Max. BV = V, I = ma 6 V (th) V =, I = 4mA 2.5 4.5 V I G = 3V, V = V na I V = V, = V 25 A = 25 C ma R (on) = V, I =.5 I 25, Note 73 m G TO-247 (IXFH) G = Gate = rain = ource Tab = rain Features G International tandard Packages Low R (ON) and Q G Avalanche Rated Low Package Inductance Advantages High Power ensity Easy to Mount pace avings Applications witch-mode and Resonant-Mode Power upplies C-C Converters PFC Circuits (Tab) (Tab) AC and C Motor rives Robotics and ervo Controls 25 IXY CORPORATION, All Rights Reserved 657A(5/5)

ymbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise pecified) Min. Typ. Max g fs V = V, I =.5 I 25, Note 7 28 R Gi Gate Input Resistance. C iss 466 pf C oss = V, V = 25V, f = MHz 33 pf C rss 3 pf Effective Output Capacitance C o(er) Energy related V 23 pf G = V C o(tr) Time related V 75 pf =.8 V t d(on) 28 ns Resistive witching Times t r 62 ns = V, V =.5 V, I =.5 I 25 t d(off) 6 ns R G = 2 (External) t f 3 ns Q g(on) 6 nc Q gs = V, V =.5 V, I =.5 I 25 28 nc Q gd 54 nc R thjc.9 C/W R thc TO-247 & TO-3P.25 C/W IXFT5N6X IXFQ5N6X IXFH5N6X ource-rain iode ymbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise pecified) Min. Typ. Max I = V 5 A I M Repetitive, pulse Width Limited by M 2 A V I F = I, = V, Note.4 V t rr I 95 ns F = 25A, -di/dt = A/μs Q RM.6 μc V I R = V RM 6 A Note. Pulse test, t 3 s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical pecifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXY reserves the right to change limits, test conditions, and dimensions without notice. IXY Reserves the Right to Change Limits, Test Conditions, and imensions. IXY MOFETs and IGBTs are covered 4,835,592 4,93,844 5,49,96 5,237,48 6,62,665 6,44,65B 6,683,344 6,727,585 7,5,734B2 7,57,338B2 by one or more of the following U.. patents: 4,86,72 5,7,58 5,63,37 5,38,25 6,259,23B 6,534,343 6,7,45B2 6,759,692 7,63,975B2 4,88,6 5,34,796 5,87,7 5,486,75 6,36,728B 6,583,55 6,7,463 6,77,478B2 7,7,537

IXFT5N6X IXFQ5N6X IXFH5N6X 5 Fig.. Output Characteristics @ = 25ºC = V 9V 2 Fig. 2. Extended Output Characteristics @ = 25ºC = V 4 8V 9V 3 2 7V 8 6 8V 6V 5V.5.5 2 2.5 3 3.5 4 4 7V 2 6V 5 5 2 25 3 5 Fig. 3. Output Characteristics @ = 25ºC = V 8V 3.4 3. Fig. 4. R (on) Normalized to I = 25A Value vs. Junction Temperature = V 4 2.6 3 2 7V 6V R(on) - Normalized 2.2.8.4. I = 5A I = 25A.6 2 3 4 5 6 7 8 9 5V.2-5 -25 25 5 75 25 5 - egrees Centigrade 4.5 Fig. 5. R (on) Normalized to I = 25A Value vs. rain Current.3 Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 4. = V.2 R(on) - Normalized 3.5 3. 2.5 2..5 = 25ºC = 25ºC BV / VG(th) - Normalized...9.8 BV..7 (th).5 2 4 6 8 2 I - Amperes.6-6 -4-2 2 4 6 8 2 4 6 - egrees Centigrade 25 IXY CORPORATION, All Rights Reserved

IXFT5N6X IXFQ5N6X IXFH5N6X 6 Fig. 7. Maximum rain Current vs. Case Temperature 5 Fig. 8. Input Admittance 5 4 4 3 2 3 2 = 25ºC 25ºC - 4ºC -5-25 25 5 75 25 5 - egrees Centigrade 3.5 4. 4.5 5. 5.5 6. 6.5 7. 7.5 8. - Volts Fig. 9. Transconductance Fig.. Forward Voltage rop of Intrinsic iode 5 6 4 = - 4ºC 4 2 g f s - iemens 3 2 25ºC 25ºC I - Amperes 8 6 4 2 = 25ºC = 25ºC 5 5 2 25 3 35 4 45 5 I - Amperes.3.4.5.6.7.8.9...2 V - Volts Fig.. Gate Charge Fig. 2. Capacitance, 9 V = 3V f = MHz VG - Volts 8 7 6 5 4 3 I = 25A I G = ma Capacitance - PicoFarads,, Ciss C oss 2 C rss 2 3 4 5 6 7 8 9 2 Q G - NanoCoulombs IXY Reserves the Right to Change Limits, Test Conditions, and imensions.

IXFT5N6X IXFQ5N6X IXFH5N6X Fig. 3. Output Capacitance tored Energy Fig. 4. Forward-Bias afe Operating Area 35 3 R (on) Limit EO - MicroJoules 25 2 5 5. = 5ºC = 25ºC ingle Pulse C 25µs µs ms ms 2 3 4 5 6., Fig. 5. Maximum Transient Thermal Impedance Z(th)JC - ºC / W........ Pulse Width - econds 25 IXY CORPORATION, All Rights Reserved IXY REF: F_5N6X(I8-R4T45) 5-22-5A

IXFT5N6X IXFQ5N6X IXFH5N6X TO-268 Outline TO-3P Outline TO-247 Outline E A A2 P P E A A2 E B A P O K M B M R Q 2 2 3 L A 4 L L 2 3 P ixys option C 4 E Terminals: - Gate 3 - ource 2,4 - rain e b2 b4 b c PIN: - Gate 2, 4 - rain 3 - ource A c b b2 b4 e O J M C A M PIN: - Gate 2, 4 - rain 3 - ource IXY Reserves the Right to Change Limits, Test Conditions, and imensions.