Speed TEMPFET NChannel Enhancement mode Logic Level Input nalog driving possible Fast switching up to 1 MHz 1 5 PGTO26352 1 5 PGTO22512 Potentialfree temperature sensor with thyristor characteristics Overtemperature protection Green Product (RoHS Compliant) valanche rated EC Qualified Type V DS R DS(on) Package E362 55 V 13 m PGTO26352 E343 PGTO22512 D Pin 3 and TB G Pin 1 Pin 2 Temperature Sensor K Pin 4 S Pin 5 Pin Symbol Function 1 G Gate 2 node Temperature Sensor 3 D Drain 4 K Cathode Temperature Sensor 5 S Source Data Sheet 1 Rev.1.4, 213726
Maximum Ratings Parameter Symbol Value Unit Drain source voltage V DS 55 V Draingate voltage, R GS = 2 k V DGR 55 Gate source voltage V GS 2 Nominal load current (ISO 483) I D(ISO) V GS = 4.5 V, V DS.5 V, T C = 85 C 19 V GS = V, V DS.5 V, T C = 85 C 26 Continuous drain current 1) I D 35 T C = C, V GS = 4.5V Pulsed drain current I D puls 188 valanche energy, single pulse E S 1.65 J I D = 19, R GS = 25 Power dissipation P tot 17 W T C = 25 C Operating temperature 2) T j 4...+175 C Peak temperature ( single event ) T jpeak 2 Storage temperature T stg 55... +15 DIN humidity category, DIN 4 4 E IEC climatic category; DIN IEC 681 4/15/56 1 current limited by bond wire 2 Note: Thermal trip temperature of temperature sensor is below 175 C Data Sheet 2 Rev.1.4, 213726
Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics junction case: R thjc.88 K/W Thermal resistance @ min. footprint R th(j) 62 Thermal resistance @ 6 cm 2 cooling area 1) R th(j) 33 4 Electrical Characteristics Parameter Symbol Values Unit at T j = 25 C, unless otherwise specified min. typ. max. Static Characteristics Drainsource breakdown voltage V GS = V, I D =.25 m V (BR)DSS 55 V Gate threshold voltage, V GS = V DS V GS(th) 1.2 I D = 13 μ 1.6 2 I D = 25 μ 1.65 Zero gate voltage drain current I DSS μ V DS = 5 V, V GS = V, T j = 4 C.1 V DS = 5 V, V GS = V, T j = 25 C.1 1 V DS = 5 V, V GS = V, T j = 15 C Gatesource leakage current n V GS = 2 V, V DS = V, T j = 25 C I GSS V GS = 2 V, V DS = V, T j = 15 C 2 DrainSource onstate resistance V GS = 4.5 V, I D = 19 V GS = V, I D = 19 R DS(on) 16 11.5 18 13 m 1 Device on 5mm*5mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 7μm thick) copper area for drain connection. PCB mounted vertical without blown air. Data Sheet 3 Rev.1.4, 213726
Electrical Characteristics Parameter Symbol Values Unit at T j = 25 C, unless otherwise specified min. typ. max. Dynamic Characteristics Forward transconductance g fs 25 S V DS >2*I D *R DS(on)max, I D = 35 Input capacitance C iss 213 266 pf V GS = V, V DS = 25 V, f = 1 MHz Output capacitance C oss 6 75 V GS = V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance C rss 32 4 V GS = V, V DS = 25 V, f = 1 MHz Turnon delay time t d(on) 15 25 ns V DD = 3 V, V GS = 4.5 V, I D = 47, R G = 2.2 Rise time t r 7 5 V DD = 3 V, V GS = 4.5 V, I D = 47, R G = 2.2 Turnoff delay time t d(off) 4 6 V DD = 3 V, V GS = 4.5 V, I D = 47, R G = 2.2 Fall time V DD = 3 V, V GS = 4.5 V, I D = 47, R G = 2.2 t f 25 4 Gate Charge Characteristics Gate charge at threshold V DD = 4 V, I D =.1, V GS = to 1 V Gate charge at 5. V V DD = 4 V, I D = 47, V GS = to 5 V Gate charge total V DD = 4 V, I D = 47, V GS = to V Gate plateau voltage V DD = 4 V, I D = 47 Q g(th) 2.5 3.8 nc Q g(5) 5 75 Q g(total) 85 13 V (plateau) 4.5 V Data Sheet 4 Rev.1.4, 213726
Electrical Characteristics Parameter Symbol Values Unit at T j = 25 C, unless otherwise specified min. typ. max. Reverse Diode Inverse diode continuous forward current I S 35 T C = 25 C Inverse diode direct current,pulsed I FM 188 T C = 25 C Inverse diode forward voltage V SD 1.25 1.8 V V GS = V, I F = 94 Reverse recovery time t rr 1 165 ns V R = 3 V, I F =I S, di F /dt = /μs Reverse recovery charge Q rr.23.35 μc V R = 3 V, I F =I S, di F /dt = /μs Sensor Characteristics For temperature sensing, i.e. temperature protection, please consider application note "Temperature sense concept Speed TEMPFET. For short circuit protection please consider application note "Short circuit behaviour of the Speed TEMPFET family. ll application notes are available at http://www.infineon.com/tempfet/ Forward voltage I K(on) = 5 m, T j = 4...+15 C I K(on) = 1.5 m, T j = 15 C Sensor override t P = μs, T j = 4...+15 C Forward current T j = 4...+15 C Sensor override t P = μs, T j = 4...+15 C V K(on) V 1.3 1.4.9 I K(on) 5 m 6 Data Sheet 5 Rev.1.4, 213726
Electrical Characteristics Parameter Symbol Values Unit at T j = 25 C, unless otherwise specified min. typ. max. Sensor Characteristics Temperature sensor leakage current I K(off) 4 μ T j = 15 C Min. reset pulse duration 1) t reset μs T j = 4...+15 C, I K(on) =.3 m, V K(Reset) <.5V V K Recovery time 1)2) T j = 4...+15 C, I K(on) =.3 m t recovery 15 Characteristics Holding current, V K(off) = 5V T j = 25 C T j = 15 C Thermal trip temperature V TS = 5V Turnoff time (Pin G+ and K+S connected) V TS = 5V, I TS(on) = 2 m Reset voltage T j = 4...+15 C I K(hold) m.5.5.5.3 T TS(on) 15 16 17 C t off.5 2.5 μs V K(reset).5 V Sensor recovery behaviour: Sensor RESET V K [V ] t reset 5 4 Sensor t recovery ON Reset OFF 1 See diagram Sensor recovery behaviour 2 Time after reset pulse until VK reaches 4V again Data Sheet 6 Rev.1.4, 213726
1 Maximum allowable power dissipation P tot = f(t C ) 2 Drain current I D = f(t C ); V GS 4.5V 18 4 14 3 Ptot 12 ID 25 2 8 6 15 4 2 5 4 4 8 12 C 18 2 4 6 8 12 14 C 18 T C T C 3 Typ. transient thermal impedance Z thj =f(t p ) @ 6 cm 2 cooling area Parameter: D=t p /T 2 K/W 4 Transient thermal impedance Z thjc = f (t p ) parameter : D = t p /T 1 K/W 1 D=.5.2 D=.5 ZthJ.1.5.2.1 ZthJC 1 2.2.1.5.2.1 1 Single pulse 3 Single pulse 2 5 4 3 2 1 1 s 3 t p 4 8 7 6 5 4 3 2 1 1 s 3 t p Data Sheet 7 Rev.1.4, 213726
5 Safe operating area I D =f(v DS ); D=.1; T C =25 C 6 Typ. output characteristic I D = f(v DS ); T j =25 C Parameter: V GS 18 V 14 7V 6V 12 ID ID 5V 8 4.5V 6 4V 4 3.5V 2 3V 1 2 V 4 V DS 7 Onstate resistance 8 Onstate resistance R ON = f(t j ); I D =19; V GS = 4.5V R ON = f(t j ); I D =19; V GS = V 4 3 m max. m max. RDS(on) 3 25 typ. RDS(on) 2 typ. 2 15 15 5 5 5 25 25 5 75 125 C 175 T j 5 25 25 5 75 125 C 175 T j Data Sheet 8 Rev.1.4, 213726
9 Typ. transfer characteristics I D = f(v GS ); V DS = 12V; T j = 25 C Typ. input threshold voltage V GS(th) = f(tj); V DS =V GS Parameter: I D 2.4 V 8 2. ID 7 6 VGS(th) 1.8 1.6 1.4 13m 13m 5 1.2 1.3m 4 1. 3 2.8.6.4 13μ.2 1 2 3 V 5 V GS 11 Typ. capacitances C = f(v DS ); V GS = V, f=1 MHz 1. 5 25 25 5 75 125 C 175 T j 12 Typ. forward charcteristics of reverse diode I F = f(v SD ) t p = 8μs (spread); Parameter: T j 2 nf 15 C Ciss 1 25 C C IF Coss Crss 1 4 8 12 16 2 24 28 32 V 4 V DS 1..2.4.6.8 1. 1.2 V 1.6 V SD Data Sheet 9 Rev.1.4, 213726
13 Typ. gate charge V GS = f(q Gate ); I D puls = 47 14 Drainsource break down voltage V (BR)DSS = f(t j ) 16 BTS 244 Z 66 V V VGS 12,2 V DS max,8 V DS max V(BR)DSS 62 6 8 58 6 56 4 54 2 52 2 4 6 8 nc 14 Q Gate 5 4 4 8 12 C 18 T j Data Sheet Rev.1.4, 213726
Package Outlines 1 Package Outlines (15)...3 9.25 ±.2 1 ±.3 ±.2 8.5 1) 1) 7.55 1.3 ±.3...15 1.27 ±.1 B.5 2.4.1 4.7 ±.5 2.7 ±.3 4.4 5 x.8 ±.1 4 x 1.7.5 ±.1.25 M B 8 MX..1 B 1) Typical Metal surface min. X = 7.25, Y = 6.9 ll metal surfaces tin plated, except area of cut. GPT962 Figure 1 PGTO26352 ±.2 9.9 ±.2 8.5 1) B 4.4 3.7.15 1.27 ±.1 17 ±.3 15.65 ±.3 1) 12.95...3 ±.2 2.8.5 2.4 9.25 ±.2 C 11 ±.5 13 ±.5...15.5 ±.1 5 x.8 ±.1 2.4 4 x 1.7.25 M B C 1) Typical Metal surface min. X = 7.25, Y = 12.3 ll metal surfaces tin plated, except area of cut. Figure 2 PGTO22512 Data Sheet 11 Rev.1.4, 213726
Package Outlines Green Product (RoHS compliant) To meet the worldwide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHSCompliant (i.e Pbfree finish on leads and suitable for Pbfree soldering according to IPC/JEDEC JSTD2). For further information on alternative packages, please visit our website: http://www.infineon.com/packages. Dimensions in mm Data Sheet 12 Rev.1.4, 213726
Revision History 2 Revision History Revision Date Changes 1.4 213726 page 1, 11: updated package name and package drawing: PGTO22562 to PGTO26352 (SMD) PGTO22543 to PGTO22512 (THD, straight leads); page 1, 11/12: removed package: PGTO2253 (THD, staggered leads) page 1: added sales names for the different packages; page 8: updated description figure 5 1.3 29124 updated package drawing of PGTO22562 1.2 29731 removed ms and DC line in SO diagram 1.1 2811 all pages: added new Infineon logo Initial version of RoHScompliant derivate of the Page 1 and 12: added RoHS compliance statement and Green product feature Page 1, 11 and 12: Package changed to RoHS compliant version page 13: added Revision history page 14: update of disclaimer Data Sheet 13 Rev.1.4, 213726
Edition 213726 Published by Infineon Technologies G 81726 Munich, Germany 213 Infineon Technologies G ll Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in lifesupport devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.