VS-60EPU02PbF, VS-60EPU02-N3, VS-60PU02PbF, VS-60PU02-N3 Ultrafast Soft Recovery iode, 60 FRE Pt FETURES Ultrafast recovery time TO-247 modified Base common cathode 2 TO-247 Base common cathode 2 Low forward voltage drop 175 operating junction temperature Output rectification esigned and qualified according to JEE -JES 47 Material categorization: for definitions of compliance please see /doc?99912 vailable vailable 1 3 athode node VS-60EPU02PbF VS-60EPU02-N3 PROUT SUMMRY node 1 node 3 VS-60PU02PbF VS-60PU02-N3 Package TO-247 modified (2 pins), TO-247 I F(V) 60 V R 200 V V F at I F 0.81 V t rr typ. See Recovery table T J max. 175 iode variation Single die BENEFITS Reduced RFI and EMI Higher frequency operation Reduced snubbing Reduced parts count ESRIPTION / PPLITIONS These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST ONITIONS VLUES UNITS athode to anode voltage V R 200 V ontinuous forward current I F(V) T = 127 60 Single pulse forward current I FSM T = 25 800 Maximum repetitive forward current I FRM Square wave, 20 khz 120 Operating junction and storage temperatures T J, T Stg -55 to +175 ELETRIL SPEIFITIONS (T J = 25 unless otherwise specified) PRMETER SYMBOL TEST ONITIONS MIN. TYP. MX. UNITS Breakdown voltage, blocking voltage V BR, V R I R = μ 200 - - I F = 60-0.98 1.08 Forward voltage V F I F = 60, T J = 175-0.81 0.88 V R = V R rated - - 50 μ Reverse leakage current I R T J = 150, V R = V R rated - - 2 m Junction capacitance T V R = 200 V - 87 - pf Series inductance L S Measured lead to lead 5 mm from package body - 8.0 - nh V Revision: 17-Oct-16 1 ocument Number: 94021 For technical questions within your region: iodesmericas@vishay.com, iodessia@vishay.com, iodeseurope@vishay.com THIS OUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PROUTS ESRIBE HEREIN N THIS OUMENT RE SUBJET TO SPEIFI ISLIMERS, SET FORTH T /doc?90
VS-60EPU02PbF, VS-60EPU02-N3, VS-60PU02PbF, VS-60PU02-N3 YNMI REOVERY HRTERISTIS (T = 25 unless otherwise specified) PRMETER SYMBOL TEST ONITIONS MIN. TYP. MX. UNITS Reverse recovery time t rr T J = 25-28 - ns I F = 1.0, di F /dt = 200 /μs, V R = 30 V - - 35 T J = 125-50 - Peak recovery current I RRM T I F = 60 J = 25-4 - di F /dt = 200 /μs T J = 125 V R = 160 V - 8 - T J = 25-59 - Reverse recovery charge Q rr T J = 125-220 - n THERML - MEHNIL SPEIFITIONS PRMETER SYMBOL TEST ONITIONS MIN. TYP. MX. UNITS Thermal resistance, R thj - - 0.70 junction to case K/W Thermal resistance, Mounting surface, flat, smooth R ths - 0.2 - case to heatsink and greased - 5.5 - g Weight - 0.2 - oz. Mounting torque - - 1.2 N m Marking device ase style TO-247 modified ase style TO-247 60EPU02 60PU02 Revision: 17-Oct-16 2 ocument Number: 94021 For technical questions within your region: iodesmericas@vishay.com, iodessia@vishay.com, iodeseurope@vishay.com THIS OUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PROUTS ESRIBE HEREIN N THIS OUMENT RE SUBJET TO SPEIFI ISLIMERS, SET FORTH T /doc?90
VS-60EPU02PbF, VS-60EPU02-N3, VS-60PU02PbF, VS-60PU02-N3 0 0 I F - Instantaneous Forward urrent () 10 T J = 175 T J = 150 T J = 25 I R - Reverse urrent (µ) 10 1 0.1 0.01 T J = 175 T J = 125 T J = 25 1 0 0.5 1 1.5 2 2.5 V F - Forward Voltage rop (V) Fig. 1 - Typical Forward Voltage rop haracteristics 0.001 0 50 150 V R - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse urrent vs. Reverse Voltage 200 T - Junction apacitance (pf) 10 000 0 T J = 25 10 0 10 0 V R - Reverse Voltage (V) Fig. 3 - Typical Junction apacitance vs. Reverse Voltage Z thj - Thermal Impedance ( /W) 1 0.1 = 0.50 = 0.20 = 0.10 = 0.05 = 0.02 = 0.01 Single pulse. (thermal resistance) 2. Peak T J = P M x Z thj + T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - Rectangular Pulse uration (s) Fig. 4 - Maximum Thermal Impedance Z thj haracteristics P M Notes: 1. uty factor = t 1 /t 2 t 1 t 2. 10 Revision: 17-Oct-16 3 ocument Number: 94021 For technical questions within your region: iodesmericas@vishay.com, iodessia@vishay.com, iodeseurope@vishay.com THIS OUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PROUTS ESRIBE HEREIN N THIS OUMENT RE SUBJET TO SPEIFI ISLIMERS, SET FORTH T /doc?90
VS-60EPU02PbF, VS-60EPU02-N3, VS-60PU02PbF, VS-60PU02-N3 llowable ase Temperature ( ) 180 170 160 150 140 130 120 110 See note (1) Square wave ( = 0.50) 80 % rated V R applied 0 20 40 60 80 t rr (ns) 70 60 50 40 30 20 I F = 90 I F = 60 I F = 30 V R = 160 V 10 T J = 125 T J = 25 0 0 I F(V) - verage Forward urrent () di F /dt (/µs) Fig. 5 - Maximum llowable ase Temperature vs. verage Forward urrent Fig. 7 - Typical Reverse Recovery Time vs. di F /dt verage Power Loss (W) 80 60 40 20 RMS limit = 0.01 = 0.02 = 0.05 = 0.10 = 0.20 = 0.50 Q rr (n) 800 700 600 500 400 300 200 V R = 160 V T J = 125 T J = 25 I F = 30 I F = 60 I F = 90 0 0 20 40 60 80 I F(V) - verage Forward urrent () Fig. 6 - Forward Power Loss haracteristics 0 0 di F /dt (/µs) Fig. 8 - Typical Stored harge vs. di F /dt Note (1) Formula used: T = T J - (Pd + Pd REV ) x R thj ; Pd = Forward power loss = I F(V) x V FM at (I F(V) /) (see fig. 6); Pd REV = Inverse power loss = V R1 x I R (1 - ); I R at V R1 = 80 % rated V R Revision: 17-Oct-16 4 ocument Number: 94021 For technical questions within your region: iodesmericas@vishay.com, iodessia@vishay.com, iodeseurope@vishay.com THIS OUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PROUTS ESRIBE HEREIN N THIS OUMENT RE SUBJET TO SPEIFI ISLIMERS, SET FORTH T /doc?90
VS-60EPU02PbF, VS-60EPU02-N3, VS-60PU02PbF, VS-60PU02-N3 V R = 200 V L = 70 μh 0.01 Ω.U.T. di F /dt adjust G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test ircuit (3) 0 I F t a t rr tb (2) I RRM Q rr 0.5 I RRM di (rec)m /dt (5) 0.75 I RRM (1) di F /dt (1) di F /dt - rate of change of current through zero crossing (2) I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current. Q rr - area under curve defined by t rr and I RRM t rr x I Q RRM rr = 2 (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Fig. 10 - Reverse Recovery Waveform and efinitions Revision: 17-Oct-16 5 ocument Number: 94021 For technical questions within your region: iodesmericas@vishay.com, iodessia@vishay.com, iodeseurope@vishay.com THIS OUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PROUTS ESRIBE HEREIN N THIS OUMENT RE SUBJET TO SPEIFI ISLIMERS, SET FORTH T /doc?90
VS-60EPU02PbF, VS-60EPU02-N3, VS-60PU02PbF, VS-60PU02-N3 ORERING INFORMTION TBLE evice code VS- 60 E P U 02 PbF 1 2 3 4 5 6 7 1 - product 2 - urrent rating (60 = 60 ) 3 - ircuit configuration: E = single diode = single diode, 3 pins 4 - Package: P = TO-247 (modified) 5 - Type of silicon: U = ultrafast recovery 6 - Voltage rating (02 = 200 V) 7 - Environmental digit: PbF = lead (Pb)-free and RoHS-compliant -N3 = halogen-free, RoHS-compliant and totally lead (Pb)-free ORERING INFORMTION (Example) PREFERRE P/N QUNTITY PER T/R MINIMUM ORER QUNTITY PKGING ESRIPTION VS-60EPU02PbF 25 500 ntistatic plastic tube VS-60EPU02-N3 25 500 ntistatic plastic tube VS-60PU02PbF 25 500 ntistatic plastic tube VS-60PU02-N3 25 500 ntistatic plastic tube LINKS TO RELTE OUMENTS imensions Part marking information SPIE model TO-247 modified TO-247 TO-247 modified PbF TO-247 modified -N3 TO-247PbF TO-247-N3 /doc?95541 /doc?95542 /doc?95255 /doc?95442 /doc?95226 /doc?95007 /doc?96049 Revision: 17-Oct-16 6 ocument Number: 94021 For technical questions within your region: iodesmericas@vishay.com, iodessia@vishay.com, iodeseurope@vishay.com THIS OUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PROUTS ESRIBE HEREIN N THIS OUMENT RE SUBJET TO SPEIFI ISLIMERS, SET FORTH T /doc?90
IMENSIONS in millimeters and inches TO-247 modified - 50 mils L/F Outline imensions B (2) R/2 Q (3) E S 2 (6) Ø P (atum B) Ø K M B M Ø P1 2 2 x R (2) 1 1 2 3 Thermal pad 4 (5) L1 L See view B E1 2 x b2 3 x b 0.10 M M b4 2 x e 1 View - Plating (b1, b3, b5) Base metal E E (c) c1 (b, b2, b4) Section -, -, E - E View B SYMBOL MILLIMETERS INHES MILLIMETERS INHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES 4.65 5.31 0.183 0.209 2 0.51 1.35 0.020 0.053 1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3 2 1.17 1.37 0.046 0.054 E1 13.46-0.53 - b 0.99 1.40 0.039 0.055 e 5.46 BS 0.215 BS b1 0.99 1.35 0.039 0.053 Ø K 0.254 0.010 b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634 b3 1.65 2.34 0.065 0.092 L1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 Ø P 3.56 3.66 0.14 0.144 b5 2.59 3.38 0.102 0.133 Ø P1-7.39-0.291 c 0.38 0.89 0.015 0.035 Q 5.31 5.69 0.209 0.224 c1 0.38 0.84 0.015 0.033 R 4.52 5.49 0.178 0.216 19.71 20.70 0.776 0.815 3 S 5.51 BS 0.217 BS 1 13.08-0.515-4 Notes (1) imensioning and tolerance per SME Y14.5M-1994 (2) ontour of slot optional (3) imension and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body Thermal pad contour optional with dimensions 1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEE outline TO-247 with exception of dimension c and Q Revision: 20-pr-17 1 ocument Number: 95541 For technical questions within your region: iodesmericas@vishay.com, iodessia@vishay.com, iodeseurope@vishay.com THIS OUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PROUTS ESRIBE HEREIN N THIS OUMENT RE SUBJET TO SPEIFI ISLIMERS, SET FORTH T /doc?90
TO-247-50 mils L/F Outline imensions IMENSIONS in millimeters and inches B (2) R/2 Q (3) E S 2 Ø K M B M (6) Φ P (atum B) 2 Φ P1 2 x R (2) 1 1 2 3 Thermal pad 4 (5) L1 L See view B E1 0.01 M B M 2 x b2 3 x b 0.10 M M b4 2 x e 1 View - Plating (b1, b3, b5) Base metal E E (c) c1 (b, b2, b4) Section -, -, E - E View B SYMBOL MILLIMETERS INHES MILLIMETERS INHES NOTES SYMBOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES 4.65 5.31 0.183 0.209 2 0.51 1.35 0.020 0.053 1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3 2 1.17 1.37 0.046 0.054 E1 13.46-0.53 - b 0.99 1.40 0.039 0.055 e 5.46 BS 0.215 BS b1 0.99 1.35 0.039 0.053 Ø K 0.254 0.010 b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634 b3 1.65 2.34 0.065 0.092 L1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 Ø P 3.56 3.66 0.14 0.144 b5 2.59 3.38 0.102 0.133 Ø P1-7.39-0.291 c 0.38 0.89 0.015 0.035 Q 5.31 5.69 0.209 0.224 c1 0.38 0.84 0.015 0.033 R 4.52 5.49 0.178 0.216 19.71 20.70 0.776 0.815 3 S 5.51 BS 0.217 BS 1 13.08-0.515-4 Notes (1) imensioning and tolerancing per SME Y14.5M-1994 (2) ontour of slot optional (3) imension and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body Thermal pad contour optional with dimensions 1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEE outline TO-247 with exception of dimension c and Q Revision: 20-pr-17 1 ocument Number: 95542 For technical questions within your region: iodesmericas@vishay.com, iodessia@vishay.com, iodeseurope@vishay.com THIS OUMENT IS SUBJET TO HNGE WITHOUT NOTIE. THE PROUTS ESRIBE HEREIN N THIS OUMENT RE SUBJET TO SPEIFI ISLIMERS, SET FORTH T /doc?90
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