SPB6N5C3 Cool MOS Power Transistor V DS @ T jmax 56 V Feature R DS(on).8 Ω New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance I D 6 PG-TO63 Type Package Ordering Code SPB6N5C3 PG-TO63 Q674-S464 Marking 6N5C3 Maximum Ratings Parameter Symbol Value Unit SPB Continuous drain current T C = 5 C T C = C 6 Pulsed drain current, t p limited by T jmax I D puls 48 valanche energy, single pulse E S 46 mj I D =8, V DD =5V valanche energy, repetitive t R limited by T ) jmax E R.64 I D =6, V DD =5V valanche current, repetitive t R limited by T jmax I R 6 Gate source voltage V GS ± V Gate source voltage C (f >Hz) V GS ±3 Power dissipation, T C = 5 C P tot 6 W Operating and storage temperature T j, T stg -55...+5 C 6) Reverse diode dv/dt dv/dt 5 V/ns Rev..4 Page 5--7
SPB6N5C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt 5 V/ns V DS = 4 V, I D = 6, T j = 5 C Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case R thjc - -.78 K/W Thermal resistance, junction - case, FullPK R thjc_fp - - 3.7 Thermal resistance, junction - ambient, leaded R thj - - 6 Thermal resistance, junction - ambient, FullPK R thj FP - - 8 Soldering temperature, reflow soldering, MSL.6 mm (.63 in.) from case for s 3) T sold - - 6 C Electrical Characteristics, at T j =5 C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V (BR)DSS V GS =V, I D =.5m 5 - - V Drain-Source avalanche V (BR)DS V GS =V, I D =6-6 - breakdown voltage Gate threshold voltage V GS(th) I D =675µ, VGS=VDS. 3 3.9 Zero gate voltage drain current I DSS V DS =5V, V GS =V, µ T j =5 C T j =5 C - -. - Gate-source leakage current I GSS V GS =V, V DS =V - - n Drain-source on-state resistance R DS(on) V GS =V, I D = Ω T j =5 C T j =5 C - -.5.68.8 - Gate input resistance R G f=mhz, open drain -.5 - Rev..4 Page 5--7
SPB6N5C3 Electrical Characteristics, at T j = 5 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Characteristics Transconductance g fs V DS *I D *R DS(on)max, - 4 - S I D = Input capacitance C iss V GS =V, V DS =5V, - 6 - pf Output capacitance C oss f=mhz - 8 - Reverse transfer capacitance C rss - 3 - Effective output capacitance, 4) energy related Effective output capacitance, 5) time related C o(er) V GS =V, V DS =V to 4V - 64 - C o(tr) - 4 - Turn-on delay time t d(on) V DD =38V, V GS =/V, - - ns Rise time t r I D =6, R G =4.3Ω - 8 - Turn-off delay time t d(off) - 5 - Fall time t f - 8 - Gate Charge Characteristics Gate to source charge Q gs V DD =38V, I D =6-7 - nc Gate to drain charge Q gd - 36 - Gate charge total Q g V DD =38V, I D =6, - 66 - V GS = to V Gate plateau voltage V (plateau) V DD =38V, I D =6-5 - V Limited only by maximum temperature Repetitve avalanche causes additional power losses that can be calculated as PV =ER*f. 3 Soldering temperature for TO-63: C, reflow 4 Co(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from to 8% V DSS. 5 Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from to 8% V DSS. 6 ISD <=I D, di/dt<=4/us, V DClink =4V, V peak <V BR, DSS, T j <T j,max. Identical low-side and high-side switch. Rev..4 Page 3 5--7
SPB6N5C3 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous I S T C =5 C - - 6 forward current Inverse diode direct current, I SM - - 48 pulsed Inverse diode forward voltage V SD V GS =V, I F =I S -. V Reverse recovery time t rr V R =38V, I F =I S, - 4 - ns Reverse recovery charge Q rr di F /dt=/µs - 7 - µc Peak reverse recovery current I rrm - 4 - Peak rate of fall of reverse recovery current di rr /dt T j =5 C - - /µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit SPB SPB R th. K/W C th.495 Ws/K R th.3 C th.946 R th3.43 C th3.98 R th4.49 C th4.36 R th5.7 C th5.9484 R th6.69 C th6.77 P tot (t) T j R th R th,n Tcase External Heatsink C th C th C th,n T amb Rev..4 Page 4 5--7
SPB6N5C3 Power dissipation P tot = f (T C ) Power dissipation FullPK P tot = f (T C ) 7 SPP6N5C3 W 36 W 4 8 Ptot Ptot 4 8 6 6 4 8 4 4 6 8 C 6 4 6 8 C 6 T C T C 3 Safe operating area I D = f ( V DS ) parameter : D =, T C =5 C 4 Safe operating area FullPK I D = f (V DS ) parameter: D =, T C = 5 C ID ID - tp =. ms tp =. ms tp =. ms tp = ms DC - tp =. ms tp =. ms tp =. ms tp = ms tp = ms DC - V 3 V DS Rev..4 Page 5 - V 3 V DS 5--7
SPB6N5C3 5 Transient thermal impedance Z thjc = f (t p ) parameter: D = t p /T K/W 6 Transient thermal impedance FullPK Z thjc = f (t p ) parameter: D = t p /t K/W ZthJC - ZthJC - - -3 D =.5 D =. D =. D =.5 D =. D =. single pulse - -3 D =.5 D =. D =. D =.5 D =. D =. single pulse -4-7 -6-5 -4-3 s - t p 7 Typ. output characteristic I D = f (V DS ); T j =5 C parameter: t p = µs, V GS 6-4 -7-6 -5-4 -3 - - s t p 8 Typ. output characteristic I D = f (V DS ); T j =5 C parameter: t p = µs, V GS 35 ID 4 V 7V 6.5V 6V ID 5 V 7V 6V 5V 3 5.5V 5V 5 4.5V 4.5V 5 4V 5 5 V 5 V DS Rev..4 Page 6 5 5 V 5 V DS 5--7
SPB6N5C3 9 Typ. drain-source on resistance R DS(on) =f(i D ) parameter: T j =5 C, V GS Drain-source on-state resistance R DS(on) = f (T j ) parameter : I D =, V GS = V.6 SPP6N5C3 Ω Ω 4V 4.5V 5V 6V R DS(on). 8V V RDS(on)..8.8.6.4.4. 98% typ 5 5 3 I D Typ. transfer characteristics I D = f ( V GS ); V DS x I D x R DS(on)max parameter: t p = µs 6-6 - 6 C 8 T j Typ. gate charge V GS = f (Q Gate ) parameter: I D = 6 pulsed 6 SPP6N5C3 V 5 Tj = 5 C 45 ID 4 35 VGS, V DS max,8 V DS max 3 Tj = 5 C 8 5 6 5 4 5 3 4 5 6 7 8 V V GS Rev..4 Page 7 3 4 5 6 7 8 nc Q Gate 5--7
SPB6N5C3 3 Forward characteristics of body diode I F = f (V SD ) parameter: T j, tp = µs SPP6N5C3 4 valanche SO I R = f (t R ) par.: T j 5 C 6 IF IR T j(start) = 5 C 8 T j = 5 C typ T j = 5 C typ 6 4 T j(start) = 5 C T j = 5 C (98%) T j = 5 C (98%) -.4.8..6.4 V 3 V SD 5 valanche energy E S = f (T j ) par.: I D = 8, V DD = 5 V.5-3 - - µs 4 t R 6 Drain-source breakdown voltage V (BR)DSS = f (T j ) 6 SPP6N5C3 V ES mj.3 V(BR)DSS 57 56 55 54 53 5. 5 5 49. 48 47 46 4 6 8 C 6 45-6 - 6 C 8 T j T j Rev..4 Page 8 5--7
SPB6N5C3 7 valanche power losses P R = f (f ) parameter: E R =.64mJ 45 W 8 Typ. capacitances C = f (V DS ) parameter: V GS =V, f= MHz 4 pf PR 35 3 5 C 3 Ciss Coss 5 5 Crss 3 4 5 Hz 6 f 3 V 5 V DS 9 Typ. C oss stored energy E oss =f(v DS ) µj 9 7 Eoss 6 5 4 3 3 V 5 V DS Rev..4 Page 9 5--7
SPB6N5C3 Definition of diodes switching characteristics Rev..4 Page 5--7
6 PG-TO63-3-, PG-TO63-3-5, PG-TO63-3- Rev..4 P 5-7
SPB6N5C3 Published by Infineon Technologies G, Bereichs Kommunikation St.-Martin-Strasse 53, D-854 München Infineon Technologies G 999 ll Rights Reserved. ttention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev..4 Page 5--7