Growing a Carbon Nanotube Atom by Atom: And yet it does turn

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Growing a Carbon Nanotube Atom by Atom: And yet it does turn Stephen T. Purcell Mickaël Marchand, Catherine Journet, Dominique Guillot, Jean-Michel Benoit, Boris I. Yakobson (Rice U.)

Summary PNEC Activities Growing carbon nanotubes during field emission

Physique de Nanostructures et Emission de champ (PNEC) Team created Sept 2004 7 Permanent researchers: CNRS and Profs Stephen Purcell, Catherine Journet, Pascal Vincent, Anthony Ayari, Jean Michel Benoit, Philippe Poncharal, Sorin Perisanu Theses May Choueib : Cotutelle LMI (D. Cornu) FE SC Nanowires Vincent Gouttenoire, : NEMS based on CNTs and Nanowires Micheal Marchand, : FE Nanotubes: growth and fundamental studies Thomas Barois : Non-linear effects, auto-oscillations 2 Engineers : Dominique Guillot, Jacques LeBrusq

In ze beginning Principal Orientations PNEC Synthesis CNTs Field emission CNTs and FE divers New competences : electron transport, low temperature physics, micro-fabrication, electron microscopy and nano-manipulation, modelisation, etc. Range of fundamental and applied projects in Nanoscience Strong inter-connection entre les orientations Divers support notably ANR PNANO, ANR Blanche, Region Rhone Alpes,

Synthesis Nanotubes (Journet, Benoit, Marchand, ) PECVD CVD SWNTs Water drop on CNTs Field emission displays Micro-fluidity (Bocquet) Heat transfer Understanding growth Fundamental field emission Nanomechanics Electronic Transport

Field emission CNTS and semiconducting nanowires Apex Temperature (K) (1) the physics de CNTS (transport, mechanics, tunneling theory, (2) electron et ions sources Applied Fundamental Studies Hot Nanotubes Emission Current (µa) Giant FE displays - Startup NEWSTEP Microchip The Concept Miniature triodes using FE from CNTs Flexible screen 8 mm 8 mm Pixel Unit (mcrt) Collaboration NEWSTEP, IMEC, Fraunhofer, AET,.. Support Capital Risk (Newstep)

Field emission from semi-conductor nanowires : SiC FE : p type semicon. Regime II (Saturation) Vacuum CB E F (- ) VB - - - - + + + + e - + E F (x) E F log(i/v 2 ) laser off laser on Tunnel barrier 1/V(10 3 V - 1 )

Nano-Mechanics of CNTs/NWs : perspectives in NEMS Auto-oscillations during FE from Semi-conducting SiC Nanowires The emission current has a strong AC component,: Nanometric DC/AC converter

Nano-Mechanics of CNTs/NWs : perspectives in NEMS Suspended SWNT oscillators Nanorésonateur I δω DS (a.u.) Drain L Grille (Au) Source (SiO2) (Si) f (MHz) application : FM demodulation Demodulation : tuner + demodulator + amplifiier Vg DC (V) Digital data transmission

Graphene: field emission, Raman, manipulation, transport, high pressure b β 633 nm monolayer 2xmonolayer α 2α 2β 1270 1320 1370 1540 1590 FIG.1: a Graphene (α) and folded part (2α). b Bernal bilayer (β) and folded part (2β) Raman Spectroscopy Graphene Single and Double misoriented bilayers Collaborations Sauvajol, San Miguel

FE Ion sources for rare gas FIB, J. Gierak LPN, Inst Néel, Raith, Orsay Physics Zone de Ionisation Fonction d'apport Nanopointe Emission Atomic size ion source

Many different types de nanotubes even single wall with variable chirality. Holy grail : Synthesis that controls radius, length, defects, number of tubes and chirality.

Growth: simulations based theories need a bailout SWNT nucleus out of more than our 500 runs. Presently world-best simulated. Shown growth evolution at 1000 K and low E Ni-C ~ 50 mev Ni 32 0.5 ns 1 ns 1.5 ns 2 ns 2.5 ns 5 ns 5.5 ns 6 ns 6.5 ns 7 ns 7.5 ns 8 ns Ribas, Ding, Yakobson, in preparation

Need a sort of epitaxy RHEED Intensity 1 ML time Electron Diffraction Layer by layer Growth measured by RHEED Oscillations Epitaxy semiconductors, (GaAs, Si, ) - Neave, et al. Appl. Phys. A (1983). Epitaxy metals (Ni, Fe,...) - Purcell, et al. (1987, Rap. Comm.)

Dilemma of chiral relativity Ding, Yakobson PNAS 106, 2506 (2009) For (n,m) tube, m kinks serve as active sites for C accretion, Growth rate K ~ m/d ~ sin (θ) ~ θ, 0 < θ < 30 o «Screw Dislocation Like» mechanism Need to observe synthesis carbon ring by ring or better still, atom by atom. How?

Observations of growth directly in the environmental TEM Lin, et al. Nanolett 2006 Still not atomic resolution Hofmann, et al. Nanolett 2007

Observations of growth by field emissio Gas leak valve (C 2 H 2, H 2, O 2, Ar...) Ultra High Vacuum 5.10-10 Torr Phosphor Screen CCD Camera e- V~ -2 kv W tip e- I(T tip =1200 C)~2A e- Article precursor J.-M. Bonard, et al. Deposition filament (Ni, Co, Fe, etc...)

We hope to see Thanks to Ruben Mascart, LPMCN

Bulk W VFE 2,5 kv CARBON 2009, June 14-19 W+C VFE 2 kv W+C+Ni VFE 1,6 kv 6/14

Synthesis of an individual CNT in FEM Use Typical CVD conditions: C 2 H 2, T=850 C, Low pressure ~ 10-7 Torr Sudden nucleation, V FE drops from 1600 to 200 V growth

Experiment versus simulations

omething more than the TEM experiments (for now) And yet it does turn Must be related to the SDL mechanism Direct measure ring by ring of growth rate Implies solid particle and growth at one defect C Ni particle C C C

~180 rotations in 12 min, ~40 nm total. 1 ring for 4 sec 0.07 nm/sec 15 successful growths (for 33 runs) of which 4 rotating growths, 6 non-rotating growths and 5 growths with FEM patterns at the screen edge where rotation could not be determined.

FEM SWNTs, K. Dean J. Vac Sci. Tech (1999).

Growth of a Nanotube Atom by Atom Numerical Analysis Visual Inspection

Why does it turn? Geometric Frustration Side View End View

If you saw it once don t worry it happens a lot. Uzi Landman, Monday night.

Erratic angular movement but CNT still lengthens and moves in steps Angle (deg) 400 300 200 100 0-100 0 10 20 30 40 50 60 70 Temps (s) Total Theta 4000 3500 3000 2500 2000 1500 1000 500 Growth 1 1 ring / 4 sec Growth 2 1 ring / 7 sec 0 0 0 10 20 30 40 50 60 70 Time (s) 12 10 8 6 4 2 Number of turns

Conclusions Beauty is in the eye of the beholder. We find it beautiful. Support for SDL growth Very slow and controlled growth FE can see attaching of individual atoms Probably dimers (to be proved) Future : Increase reproducibility TEM TEM TEM Play interactively with pressure, temperature, gas type