Data Sheet, Doc. No. 5SYA 1447-216-9 5SNG 15Q173 62Pak phase leg IGBT Module VCE = 17 V IC = 15 A Ultra low-loss, rugged SPT++ chip-set Smooth switching SPT++ chip-set for good EMC Cu base-plate for low thermal resistance Industry standard package 2 switches in one package Maximum rated values 1) Parameter Symbol Conditions min max Unit Collector-emitter voltage VCES VGE = V, Tvj 25 C 17 V DC collector current IC TC = 1 C, Tvj = 175 C 15 A Peak collector current ICM tp = 1 ms 3 A Gate-emitter voltage VGES -2 2 V Total power dissipation Ptot TC = 25 C, Tvj = 175 C, per switch 95 W DC forward current IF 15 A Peak forward current IFRM tp = 1 ms 3 A Surge current IGBT short circuit SOA IFSM tpsc VR = V, Tvj = 175 C, tp = 1 ms, half-sinewave VCC = 13 V, VCEM CHIP 17 V VGE 15 V, Tvj 175 C 75 A 1 µs Isolation voltage Visol 1 min, f = 5 Hz 4 V Junction temperature Tvj 175 C Junction operating temperature Tvj(op) -4 175 C Case temperature TC -4 125 2) /15 C Storage temperature Tstg -4 125 C Mounting torques 3) Ms Base-heatsink, M6 screws 3 6 Mt1 Main terminals, M6 screws 3 6 Nm 1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 6747 2) for UL1557 compliance TCmax must be limited to 125 C 3) for detailed mounting instructions refer to ABB Document No. 5SYA 216
IGBT characteristic values 4) Parameter Symbol Conditions min typ max Unit Collector (-emitter) breakdown voltage Collector-emitter 5) saturation voltage V(BR)CES VGE = V, IC = 1 ma, Tvj = 25 C 17 V VCE sat IC = 15 A, VGE Collector cut-off current ICES VCE = 17 V, VGE = V Tvj = 25 C 2.25 2.6 V Tvj = 125 C 2.55 V Tvj = 175 C 2.75 V Tvj = 25 C.5 ma Tvj = 125 C.75 ma Tvj = 175 C 15 ma Gate leakage current IGES VCE = V, VGE = 2 V, Tvj = 175 C -1 1 μa Gate-emitter threshold voltage VGE(th) IC = 6 ma, VCE = VGE, Tvj = 25 C 4.5 6.5 V Gate charge QG IC = 15 A, VCE = 9 V, VGE = -15 V..15 V 1.1 µc Input capacitance Cies 9.6 nf Output capacitance Coes VCE = 25 V, VGE = V, f = 1 MHz, Tvj = 25 C.85 nf Reverse transfer capacitance Cres.8 nf Internal gate resistance RGint per switch 3.9 Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching energy Turn-off switching energy Short circuit current td(on) tr td(off) tf Eon Eoff 4) Characteristic values according to IEC 6747 9 5) Collector-emitter saturation voltage is given at chip level ISC VCC = 9 V, IC = 15 A, RG, VGE = 15 V, = 6 nh, inductive load VCC = 9 V, IC = 15 A, RG, VGE = 15 V, = 6 nh, inductive load VCC = 9 V, IC = 15 A, RG, VGE = ±15 V, = 6 nh, inductive load VCC = 9 V, IC = 15 A, RG, VGE = ±15 V, = 6 nh, inductive load tpsc 1 µs, VGE, VCC = 13 V, VCEM CHIP 17 V Tvj = 25 C 18 ns Tvj = 125 C 19 ns Tvj = 175 C 19 ns Tvj = 25 C 66 ns Tvj = 125 C 68 ns Tvj = 175 C 73 ns Tvj = 25 C 22 ns Tvj = 125 C 245 ns Tvj = 175 C 26 ns Tvj = 25 C 185 ns Tvj = 125 C 195 ns Tvj = 175 C 25 ns Tvj = 25 C 43 mj Tvj = 125 C 57 mj Tvj = 175 C 73 mj Tvj = 25 C 22 mj Tvj = 125 C 37 mj Tvj = 175 C 46 mj Tvj = 175 C 48 A 2 5SNG 15Q173 Doc. No. 5SYA 1447-216-9
Diode characteristic values 6) Parameter Symbol Conditions min typ max Unit Tvj = 25 C 1.6 2.2 V Forward voltage 7) VF IF = 15 A Tvj = 125 C 1.75 V Tvj = 175 C 1.7 V Tvj = 25 C 175 A Peak reverse recovery current IRM Tvj = 125 C 19 A Tvj = 175 C 21 A Tvj = 25 C 42 µc Recovered charge Reverse recovery time Qr trr VCC = 9 V, IF = 15 A, VGE = 15 V, RG, di/dt = 3 ka/µs = 6 nh, inductive load Tvj = 125 C 7 µc Tvj = 175 C 98 µc Tvj = 25 C 43 ns Tvj = 125 C 58 ns Tvj = 175 C 84 ns Tvj = 25 C 25 mj Reverse recovery energy Erec Tvj = 125 C 4 mj Tvj = 175 C 56 mj 6) Characteristic values according to IEC 6747 2 7) Forward voltage is given at chip level Package properties 8) Parameter Symbol Conditions min typ max Unit IGBT thermal resistance junction to case Diode thermal resistance junction to case IGBT thermal resistance 3) case to heatsink Diode thermal resistance 3) case to heatsink Rth(j-c)IGBT.135 K/W per switch Rth(j-c)DIODE.2 K/W Rth(c-s)IGBT IGBT per switch, grease = 1W/m x K.33 K/W Rth(c-s)DIODE Diode per switch, grease = 1W/m x K.5 K/W Comparative tracking index CTI 2 Module stray inductance Lσ CE per switch 2 nh TC = 25 C.7 Resistance, terminal-chip RCC +EE per switch TC = 125 C.98 TC = 175 C 1.12 mω 3) For detailed mounting instructions refer to ABB Document No. 5SYA 216 Mechanical properties 8) Parameter Symbol Conditions min typ max Unit Dimensions L x W x H Typical 16.4 x 61.4 x 3.9 mm Clearance distance in air da according to IEC 6664-1 and EN 5124-1 Term. to base: 23 Term. to term: 11 mm Surface creepage distance ds according to IEC 6664-1 and EN 5124-1 Term. to base: 29 Term. to term: 23 mm Mass m 33 g 8) Package and mechanical properties according to IEC 6747 15 3 5SNG 15Q173 Doc. No. 5SYA 1447-216-9
Electrical configuration 6 7 1 2 3 5 4 Outline drawing 3) Note: all dimensions are shown in millimeters 3) For detailed mounting instructions refer to ABB Document No. 5SYA 216 This is an electrostatic sensitive device, please observe the international standard IEC 6747-1, chap. VIII. This product has been designed and qualified for Industrial Level. 4 5SNG 15Q173 Doc. No. 5SYA 1447-216-9
3 3 = 25 25 C 25 2 175 C 2 175 C 15 125 C 15 125 C 25 C 1 1 5 5 1 2 3 4 5 6 5 6 7 8 9 1 11 12 13 14 15 Fig. 1 Typical on-state characteristics, chip level Fig. 2 Typical transfer characteristics, chip level 3 3 25 19 V 25 19 V 17 V 17 V 2 15 V 2 15 V 15 13 V 15 13 V 11 V 11 V 1 9 V 1 9 V 5 = 25 C 5 = 175 C 1 2 3 4 5 1 2 3 4 5 Fig. 3 Typical output characteristics, chip level Fig. 4 Typical output characteristics, chip level 5 5SNG 15Q173 Doc. No. 5SYA 1447-216-9
.25.2 = 9 V on off = nf = 6 nh =175 C.1 = 9 V = 15 A = nf = 6 nh E on =175 C E on, E off in J.15.1 E on =125 C E on, E off in J.5 =125 C E off.5 E off. 1 2 3. 2 4 6 8 1 12 in Fig. 5 Typical switching energies per pulse vs. collector current Fig. 6 Typical switching energies per pulse vs. gate resistor 1 1 = 9 V = 15 A t d(off) = nf = 125 C = 6 nh t d(on), t r, t d(off), t f in µs.1 t d(on) t r t f = 9 V on off = nf = 125 C = 6 nh t d(on), t r, t d(off), t f in µs.1 t d(off) t d(on) t f t r.1 1 2 3 2 4 6 8 1 12 in Fig. 7 Typical switching times vs. collector current Fig. 8 Typical switching times vs. gate resistor 6 5SNG 15Q173 Doc. No. 5SYA 1447-216-9
= V f OSC = 1 MHz V OSC = 5 mv 2 15 1 C ies 1 V cc = 9 V 5 C in nf V cc = 13 V -5 C oes 1 C res -1 I c = 15 A = 25 C 5 1 15 2 25 3 35-15..25.5.75 1. 1.25 Q G in C Fig. 9 Typical capacitances vs. collector-emitter voltage Fig. 1 Typical gate charge characteristics 2. chip module 1.5 pulse / 1..5 13 V = 175 C = ±15 V. 5 1 15 2 Fig. 11 Turn-off safe operating area (RBSOA) 7 5SNG 15Q173 Doc. No. 5SYA 1447-216-9
E rec in mj, I RM, Q r in µc 25 2 15 1 =175 C I RM =125 C Q r = 9 V on = nf = 6 nh E rec in mj, I RM, Q r in µc 3 25 2 15 1 = 9 V I F = 15 A = nf = 125 C = 6 nh = 12 = 8.2 = 5.6 = 3.9 I RM Q r = 1.5 =.47 = 5 5 E rec E rec 1 2 3 I F 1. 1.5 2. 2.5 3. 3.5 di/dt in ka/µs Fig. 12 Typical reverse recovery characteristics vs. forward current Fig. 13 Typical reverse recovery characteristics vs. di/dt 3 4 25 17 V di/dt 3.5 ka/µs = 175 C 3 2 25 C I F 15 175 C I R 2 1 125 C 1 5..5 1. 1.5 2. 2.5 V F 1 2 V R Fig. 14 Typical diode forward characteristics, chip level Fig. 15 Safe operating area diode (SOA) 8 5SNG 15Q173 Doc. No. 5SYA 1447-216-9
Analytical function for transient thermal impedance: IGBT Z th (j-c) (t) = n i 1 R i (1-e -t/ i i 1 2 3 4 5 R i(k/kw) 13.7 74.6 46.7 i(ms).9 4.2 136 ) DIODE R i(k/kw) 33.6 51.6 114.9 i(ms) 1.8 137 37.2 Fig. 16 Thermal impendance vs. time Related documents: 5SYA 242 Failure rates of IGBT modules due to cosmic rays 5SYA 245 Thermal runaway during blocking 5SYA 253 Applying IGBT 5SYA 258 Surge currents for IGBT diodes 5SYA 293 Thermal design and temperature ratings of IGBT modules 5SYA 298 Paralleling of IGBT modules ABB Switzerland Ltd. Semiconductors Fabrikstrasse 3 CH-56 Lenzburg Switzerland Phone: +41 58 586 1419 Fax: +41 58 586 136 E-Mail: abbsem@ch.abb.com Internet: www.abb.com/semiconductors We reserve the right to make technical changes or to modify the contents of this document without prior notice. We reserve all rights in this document and the information contained therein. Any reproduction or utilization of this document or parts thereof for commercial purposes without our prior written consent is forbidden. Any liability for use of our products contrary to the instructions in this document is excluded. 5SNG 15Q173 Doc. No. 5SYA 1447-216-7