Lecture 27 Bipolar Junction Transistors

Similar documents
CHAPTER 13. Exercises. E13.1 The emitter current is given by the Shockley equation:

Copyright 2004 by Oxford University Press, Inc.

Diode. Current HmAL Voltage HVL Simplified equivalent circuit. V γ. Reverse bias. Forward bias. Designation: Symbol:

I = α I I. Bipolar Junction Transistors (BJTs) 2.15 The Emitter-Coupled Pair. By using KVL: V

Week 11: Differential Amplifiers

ELCT 503: Semiconductors. Fall 2014

V V. This calculation is repeated now for each current I.

Graphical Analysis of a BJT Amplifier

ANALOG ELECTRONICS I. Transistor Amplifiers DR NORLAILI MOHD NOH

55:141 Advanced Circuit Techniques Two-Port Theory

COLLEGE OF ENGINEERING PUTRAJAYA CAMPUS FINAL EXAMINATION SPECIAL SEMESTER 2013 / 2014

Driving your LED s. LED Driver. The question then is: how do we use this square wave to turn on and turn off the LED?

Physics Courseware Electronics

ECSE Linearity Superposition Principle Superposition Example Dependent Sources. 10 kω. 30 V 5 ma. 6 kω. 2 kω

CHAPTER 13. Solutions for Exercises

College of Engineering Department of Electronics and Communication Engineering. Test 2

College of Engineering Department of Electronics and Communication Engineering. Test 1 With Model Answer

5.6 Small-Signal Operation and Models

Common Base Configuration

Chapter 2 Problem Solutions 2.1 R v = Peak diode current i d (max) = R 1 K 0.6 I 0 I 0

Transfer Characteristic

Small signal analysis

EE C245 ME C218 Introduction to MEMS Design

Key component in Operational Amplifiers

55:141 Advanced Circuit Techniques Two-Port Theory

1.4 Small-signal models of BJT

3.2 Terminal Characteristics of Junction Diodes (pp )

Boise State University Department of Electrical and Computer Engineering ECE 212L Circuit Analysis and Design Lab

I 2 V V. = 0 write 1 loop equation for each loop with a voltage not in the current set of equations. or I using Ohm s Law V 1 5.

R. W. Erickson. Department of Electrical, Computer, and Energy Engineering University of Colorado, Boulder

COLLEGE OF ENGINEERING PUTRAJAYA CAMPUS FINAL EXAMINATION SEMESTER / 2014

ELG 2135 ELECTRONICS I SECOND CHAPTER: OPERATIONAL AMPLIFIERS

Boise State University Department of Electrical and Computer Engineering ECE 212L Circuit Analysis and Design Lab

Physics 4B. A positive value is obtained, so the current is counterclockwise around the circuit.

Physics 4B. Question and 3 tie (clockwise), then 2 and 5 tie (zero), then 4 and 6 tie (counterclockwise) B i. ( T / s) = 1.74 V.

9/12/2013. Microelectronics Circuit Analysis and Design. Modes of Operation. Cross Section of Integrated Circuit npn Transistor

Week 9: Multivibrators, MOSFET Amplifiers

VI. Transistor Amplifiers

I. INTRODUCTION. 1.1 Circuit Theory Fundamentals

FEEDBACK AMPLIFIERS. v i or v s v 0

Chapter 13 Bipolar Junction Transistors

ELECTRONICS. EE 42/100 Lecture 4: Resistive Networks and Nodal Analysis. Rev B 1/25/2012 (9:49PM) Prof. Ali M. Niknejad

Electrical Circuits II (ECE233b)

ELECTRONIC DEVICES. Assist. prof. Laura-Nicoleta IVANCIU, Ph.D. C13 MOSFET operation

Selected Student Solutions for Chapter 2

Chapter 6. Operational Amplifier. inputs can be defined as the average of the sum of the two signals.

FE REVIEW OPERATIONAL AMPLIFIERS (OP-AMPS)( ) 8/25/2010

MAE140 - Linear Circuits - Winter 16 Final, March 16, 2016

PHYSICS - CLUTCH CH 28: INDUCTION AND INDUCTANCE.

UNIVERSITY OF UTAH ELECTRICAL & COMPUTER ENGINEERING DEPARTMENT. 10k. 3mH. 10k. Only one current in the branch:

4.1 The Ideal Diode. Reading Assignment: pp Before we get started with ideal diodes, let s first recall linear device behavior!

Lecture 5: Operational Amplifiers and Op Amp Circuits

Lecture 14: More MOS Circuits and the Differential Amplifier

MAE140 Linear Circuits (for non-electrical engs)

matter consists, measured in coulombs (C) 1 C of charge requires electrons Law of conservation of charge: charge cannot be created or

6.01: Introduction to EECS 1 Week 6 October 15, 2009

Chapter 9 Bipolar Junction Transistor

Department of Electrical and Computer Engineering FEEDBACK AMPLIFIERS

55:041 Electronic Circuits

55:041 Electronic Circuits

Figure 1 Basic epitaxial planar structure of NPN. Figure 2 The 3 regions of NPN (left) and PNP (right) type of transistors

PHYSICS - CLUTCH 1E CH 28: INDUCTION AND INDUCTANCE.

Physics 114 Exam 2 Spring Name:

Chapter 10 Sinusoidal Steady-State Power Calculations

Designing Information Devices and Systems II Spring 2018 J. Roychowdhury and M. Maharbiz Discussion 3A

6.3.7 Example with Runga Kutta 4 th order method

Title Chapters HW Due date. Lab Due date 8 Sept Mon 2 Kirchoff s Laws NO LAB. 9 Sept Tue NO LAB 10 Sept Wed 3 Power

PHY2049 Exam 2 solutions Fall 2016 Solution:

Energy Storage Elements: Capacitors and Inductors

I. INTRODUCTION. There are two other circuit elements that we will use and are special cases of the above elements. They are:

Massachusetts Institute of Technology Department of Electrical Engineering and Computer Science Circuits and Electronics Spring 2001

Week3, Chapter 4. Position and Displacement. Motion in Two Dimensions. Instantaneous Velocity. Average Velocity

between standard Gibbs free energies of formation for products and reactants, ΔG! R = ν i ΔG f,i, we

G = G 1 + G 2 + G 3 G 2 +G 3 G1 G2 G3. Network (a) Network (b) Network (c) Network (d)

MPSA13 MPSA14 CASE 29-02, STYLE 1 TO-92 (TO-226AA) DARLINGTON TRANSISTOR MAXIMUM RATINGS THERMAL CHARACTERISTICS ON CHARACTERISTICS) 1) NPN SILICON

Coupling Element and Coupled circuits. Coupled inductor Ideal transformer Controlled sources

figure shows a pnp transistor biased to operate in the active mode

3.5 Rectifier Circuits

MAE140 - Linear Circuits - Winter 16 Midterm, February 5

E40M Device Models, Resistors, Voltage and Current Sources, Diodes, Solar Cells. M. Horowitz, J. Plummer, R. Howe 1

Revision: December 13, E Main Suite D Pullman, WA (509) Voice and Fax

FE REVIEW OPERATIONAL AMPLIFIERS (OP-AMPS)

Operating conditions of a mine fan under conditions of variable resistance

Queens College, CUNY, Department of Computer Science Numerical Methods CSCI 361 / 761 Spring 2018 Instructor: Dr. Sateesh Mane.

EE 330 Lecture 24. Small Signal Analysis Small Signal Analysis of BJT Amplifier

Temperature. Chapter Heat Engine

Physics 5153 Classical Mechanics. Principle of Virtual Work-1

MAE140 Linear Circuits (for non-electrical engs)

KIRCHHOFF CURRENT LAW

Output Stages and Power Amplifiers

EE 2006 Electric Circuit Analysis Fall September 04, 2014 Lecture 02

EE 2006 Electric Circuit Analysis Spring January 23, 2015 Lecture 02

Electrical Circuits 2.1 INTRODUCTION CHAPTER

II. PASSIVE FILTERS. H(j ω) Pass. Stop

Flyback Converter in DCM

ES 330 Electronics II Homework 04 (Fall 2017 Due Wednesday, September 27, 2017)

( ) ( ) ( ) ( ) ( ) 1 2. ELEC 201 Electric Circuit Analysis I Lecture 8(a) RL and RC Circuits: Single Switch 11/9/2017. Driven RL Circuit: Equation

First day August 1, Problems and Solutions

Workshop: Approximating energies and wave functions Quantum aspects of physical chemistry

More metrics on cartesian products

Transcription:

Lecture 27 polar Juncton Transstors ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

polar Juncton Transstors 1. Understand bpolar juncton transstor operaton n amplfer crcuts. 2. Analyze smple amplfers usng the load-lne technque and understand the causes of nonlnear dstorton. ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

Tubes ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

Deforest s Audon ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

Trode Tube ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

ardeen, rttan and Shockley Dscoery of the transstor n 1947 ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

Frst Transstor ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

Intal Demonstraton of Sold State Amplfcaton ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

Frst Integrated rcut (I) Jack Klby at Texas Instruments (1958) ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

Early Integrated rcut (I) ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

hp Eoluton ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

NPN and PNP polar Juncton Transstors (JT) http://www.mtm.u.lt/pfk/funkc_darna/transstor/bpolar_transstor.htm ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

NPN polar Juncton Transstor ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

as ondtons for PN Junctons The base emtter p-n juncton of an npn transstor s normally forward based The base collector p-n juncton of an npn transstor s normally reerse based ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

as ondtons for NPN Junctons http://www.mtm.u.lt/pfk/funkc_darna/transstor/bpolar_transstor.htm ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

as ondtons for NPN Junctons http://www.mtm.u.lt/pfk/funkc_darna/transstor/bpolar_transstor.htm ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

as ondtons for NPN Junctons http://www.mtm.u.lt/pfk/funkc_darna/transstor/bpolar_transstor.htm ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

as ondtons for NPN Junctons http://www.mtm.u.lt/pfk/funkc_darna/transstor/bpolar_transstor.htm ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

Equatons of Operaton E E I ES exp 1 VT From Krchoff s current law: + E ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

Equatons of Operaton Defne α as the rato of collector current to emtter current: α Values for α range from 0.9 to 0.999 wth 0.99 beng typcal. Snce: + 0.99 + 0. 01 E Most of the emtter current comes from the collector and ery lttle ( 1%) from the base. E E E ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc. Equatons of Operaton 1 exp T E ES V α I 1 exp T E ES E V I E α

ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc. 1 exp ) (1 T E ES V I α ) (1 1 α + E E E E E Equatons of Operaton

Equatons of Operaton Defne β as the rato of collector current to base current: β α 1 α Values for β range from about 10 to 1,000 wth a common alue beng β 100. The collector current s an amplfed erson of the base current. ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc. β

ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc. Equatons of Operaton 1 exp T E ES E V I 1 exp T E ES V I α 99 0. E α 1 exp ) (1 T E ES V I α β 100 1 α α β

The base regon s ery thn Only a small fracton of the emtter current flows nto the base proded that the collector-base juncton s reerse based and the base-emtter juncton s forward based. ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

Exercse 13.1 A certan transstor has β 50, I ES 10-14 A, E 5 V, and E 10 ma. Assume V T 0.026 V. Fnd E,,, and α. E E I ES V α T E exp V E β ln I E ES E E β 50 α 0.980 β + 1 51 T 9.80mA 9.80mA 50 1 For operaton wth 2 10 26 mv ln 718.4 mv 14 10 0.718V 5V 4.282V 196μA exp V ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc. E >> I ES E I ES E T

Exercse 13.2 ompute the correspondng alues of β f α 0.9, 0.99 and 0.999 β α 1 α 0.9 1 0.9 0.99 1 0.99 0.999 1 0.999 β 0.9 β 0.99 9 β 0.999 99 999 ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

Exercse 13.3 A certan transstor operated wth forward bas of the base-emtter juncton and reerse bas of the base-collector juncton has 9.5 ma and E 10 ma. Fnd the alue of, α and β. α β E E 0.5mA 9.5mA 0.95 10mA 19 ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

ommon-emtter haracterstcs E f E > E E E < 0 reerse bas ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

ommon-emtter Input haracterstcs E (1 α) I ES exp 1 VT ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

ommon-emtter Output haracterstcs β for β 100 ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

Amplfcaton by the JT A small change n E results n a large change n f the base emtter s forward based. Proded E s more than a few tenth s of a olt, ths change n results n a larger change n snce β. ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

ommon-emtter Amplfer ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

Load-Lne Analyss of a ommon Emtter Amplfer (Input rcut) ( t) R ( t) ( t) V + + n E ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

Load-Lne Analyss of a ommon Emtter Amplfer (Output rcut) V R + E ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

Inertng Amplfer As n (t) goes poste, the load lne moes upward and to the rght, and the alue of ncreases. Ths causes the operatng pont on the output to moe upwards, decreasng E An ncrease n n (t) results n a much larger decrease n E so that the common emtter amplfer s an nertng amplfer ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

Load-Lne Analyss of JT Assume V 10V V 1.6V Q 25 μa R 40 kω R 2 kω V n 0.4sn(ωt) V 1.6 + E + 0 n n and 0 and ( t) R ( t) + ( t) 40kΩ 1.6 1.6V 40μA 40kΩ ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc. n n 0 + E 0 E E

Load-Lne Analyss of JT Assume V 10V V 1.6V max 35 μa R 40 kω R 2 kω V n 0.4sn(ωt) V 1.6 + E + 0 n n and 0 and ( t) R ( t) + ( t) 40kΩ ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc. n n + 0.4 E 0.4 E E 2 2V 50μA 40kΩ

Load-Lne Analyss of JT Assume V 10V V 1.6V mn 15 μa R 40 kω R 2 kω V n 0.4sn(ωt) V 1.6 + E + 0 n n and 0 and ( t) R ( t) + ( t) n n 40kΩ + E 0.4 E 0.4 E 1.2 1.2V 40kΩ 30μA ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

Load-Lne Analyss of JT Q 25 μa mn 15 μa max 35 μa V EQ 5V EQ 2.5 ma V EQ 5V V Emn 3V V Emax 7V 10 2k Ω + E ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

Load-Lne Analyss of JT Voltage waeforms for the common emtter amplfer. The gan s -5 (nertng). ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

lppng When becomes zero, we say that the transstor s cutoff. When E 0.2 V, we say that the transstor s n saturaton. Amplfcaton occurs n the acte regon. lppng occurs n the saturaton or cutoff regons. ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

lppng ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

Exercse 13.5 n ( t) 0.8sn( ωt) Fnd V and V E E mn max,v EQ Q 25μA V 1.6 + E + 0 n n and 0 and ( t) R ( t) + ( t) 40kΩ 1.6 1.6V 40μA 40kΩ ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc. n n 0 + E 0 E E

Exercse 13.5 n ( t) 0.8sn( ωt) Fnd V and V E E mn max,v EQ 45 μa max V 1.6 + E + 0 n n and 0 and ( t) R ( t) + ( t) 40kΩ ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc. n n + 0.8 E 0.8 E E 2.4 2.4V 60μA 40kΩ

Exercse 13.5 n ( t) 0.8sn( ωt) Fnd V and V E E mn max,v EQ 5 μa mn V 1.6 + E + 0 n n and 0 and ( t) R ( t) + ( t) 40kΩ ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc. n n + E 0.8 E 0.8 E 0.8 0.8V 20μA 40kΩ

Exercse 13.5 Q 25μA V E Q 5V Q 2.5mA mn max 5μA 45μA V V E E max mn 9V 1V mn max 0.5mA 4.5mA ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

Exercse 13.6 n ( t) 0.8sn( ωt) V Q 15μA 1. 2V V 1.2 + E + 0 n n and 0 and ( t) R ( t) + ( t) 40kΩ 1.2 1.2V 40kΩ 30μA ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc. n n 0 + E 0 E E

Exercse 13.6 n ( t) 0.8sn( ωt) 35 μa V max 1. 2V V 1.2 + E + 0 n n and 0 and ( t) R ( t) + ( t) 40kΩ ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc. n n + 0.8 E 0.8 E E 2 2V 50μA 40kΩ

Exercse 13.6 n ( t) 0.8sn( ωt) 1 μa V mn 1. 2V V 1.2 + E + 0 n n and 0 and ( t) R ( t) + ( t) n n 40kΩ + E 0.8 E 0.8 E 0.4 0.4V 40kΩ 10μA ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

Exercse 13.6 Q 15μA V E Q 7V Q 1.5mA mn max 1μA 35μA V V E E max mn 9.8V 3V mn max 1.0mA 3.5mA ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

PNP polar Juncton Transstor Except for reersal of current drectons and oltage polartes, the pnp JT s almost dentcal to the npn JT. ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

PNP polar Juncton Transstor E α β E (1 α) + E ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc. ommon-emtter haracterstcs for a PNP JT 1 exp ) (1 1 exp T E ES T E ES E V I V I α

Exercse 13.7 Fnd β: For V β E 6V, 2.5mA 50μA 50 2.5mA 50μA ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

Exercse 13.8 ommon emtter amplfer 0.8 8000 + n E 0 ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

Exercse 13.8 0.8 n 8000 + E 0 n n n n n n 0 0 0.2 0.2 0.2 0.2 E E E 0 0 0 0 0 0 E E E 0.8 0.8 100μA 8000 0.6 0.6 8000 1 1 8000 75μA 125μA ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

Exercse 13.8 Q max mn 24 48 5 μ μ μ A A A ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

Exercse 13.8 ommon emtter amplfer 9 E 3000 9 ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc. + E + 3000 0

Exercse 13.8 Load lne: E 9 + 3000 0 E 9 E 0 9 3000 3mA ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc.

Exercse 13.8 max n Q 48μA 5μA 24μA 5.3V ELETRIAL ENGINEERING: PRINIPLES AND APPLIATIONS, Fourth Edton, by Allan R. Hambley, 2008 Pearson Educaton, Inc. V E V V max E E mn Q 1.8V 8.3V