HiPerFAST TM IGBT Optimized for 1-25 KHz hard switching and up to 15 KHz resonant switching Preliminary Data Sheet IXGH 4N6B2D1 IXGT 4N6B2D1 S = 6 V 25 = 75 A (sat) < 1.7 V t fi typ = 82 ns Symbol Test Conditions Maximum Ratings S = 25 C to 15 C 6 V V CGR = 25 C to 15 C; R GE = 1 MΩ 6 V V GES Continuous ±2 V V GEM Transient ±3 V 25 = 25 C (limited by leads) 75 A 11 = 11 C 4 A M = 25 C, 1 ms 2 A SSOA V GE = 15 V, = 125 C, R G = 1 Ω M = 8 A (RBSOA) Clamped inductive load @ 6 V P C = 25 C 3 W -55... +15 C M 15 C T stg -55... +15 C Maximum lead temperature for soldering 3 C 1.6 mm (.62 in.) from case for 1 s M d Mounting torque (M3) 1.13/1 Nm/lb.in. Weight TO-247 AD 6 g TO-268 SMD 4 g Symbol Test Conditions Characteristic Values ( = 25 C, unless otherwise specified) min. typ. max. V GE(th) = 25 µa, = V GE 3. 5. V TO-268 (IXGT) TO-247 AD (IXGH) G = Gate, E = Emitter, Features G C E E C = Collector, TAB = Collector Medium frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Applications G C (TAB) C (TAB) PFC circuits Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers ES = S = 25 C 5 µa V GE = V = 15 C 1 ma I GES = V, V GE = ±2 V ±1 na (sat) = 3 A, V GE = 15 V = 25 C 1.7 V 23 IXYS All rights reserved DS9919(1/3)
IXGH 4N6B2D1 IXGT 4N6B2D1 Symbol Test Conditions Characteristic Values ( = 25 C, unless otherwise specified) min. typ. max. TO-247 AD Outline g fs = 3 A; = 1 V, 2 36 S Pulse test, t 3 µs, duty cycle 2 % C ies 256 pf C oes = 25 V, V GE = V, f = 1 MHz 21 pf C res 54 pf Q g 1 nc Q ge = 3 A, V GE = 15 V, = 3 V 15 nc Q gc 36 nc t d(on) 18 ns t ri Inductive load, = 25 C 2 ns = 3 A, V GE = 15 V 13 2 ns V t CE = 4 V, R G = 3.3 Ω fi 82 15 ns.4.8 mj t d(on) 18 ns t ri 2 ns Inductive load, = 125 C E on.3 mj = 3 A, V GE = 15 V 24 ns = 4 V, R G = 3.3 Ω t fi 15 ns 1.1 mj Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3.185.29 A 1 2.2 2.54.87.12 A 2 2.2 2.6.59.98 b 1. 1.4.4.55 b 1 1.65 2.13.65.84 b 2 2.87 3.12.113.123 C.4.8.16.31 D 2.8 21.46.819.845 E 15.75 16.26.61.64 e 5.2 5.72.25.225 L 19.81 2.32.78.8 L1 4.5.177 P 3.55 3.65.14.144 Q 5.89 6.4.232.252 R 4.32 5.49.17.216 S 6.15 BSC 242 BSC TO-268 Outline e P R thjc.42 K/W R thck (TO-247).25 K/W Reverse Diode (FRED) Characteristic Values ( = 25 C, unless otherwise specified) Symbol Test Conditions min. typ. max. V F = 3 A, V GE = V, Pulse test =15 C 1.6 V t 3 µs, duty cycle d 2 % 2.5 V I RM = 3 A, V GE = V, -di F =1 A/µs, = 1 C 4 A t rr = 1 V = 1 C 1 ns = 1 A; -di = 1 A/µs; = 3 V 25 ns R thjc Min. Recommended Footprint.9 K/W IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,16 5,17,58 5,49,961 5,187,117 5,486,715 6,36,728B1 6,259,123B1 6,36,728B1 4,85,72 4,931,844 5,34,796 5,63,37 5,237,481 5,381,25 6,44,65B1 6,162,665 6,534,343
IXGH 4N6B2D1 IXGT 4N6B2D1 6 5 Fig. 1. Output Characteristics @ 25 Deg. C 13V 11V 9V 21 18 Fig. 2. Extended Output Characteristics @ 25 deg. C 13V 11V 4 3 2 7V 15 12 9 6 9V 7V 1 5V.5 1 2 2.5 3 3 1 2 3 4 5 6 7 5V Fig. 3. Output Characteristics @ 125 Deg. C Fig. 4. Dependence of (sat) on Temperature 6 5 13V 11V 9V 1.4 1.3 V GE = 15V 4 3 2 7V (sat) - Normalized 1.1 1..9.8 = 6A = 3A 1 5V.7 = 15A.5 1 2 2.5 3.6-5 -25 25 5 75 1 125 15 - Degrees Centigrade Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Emitter voltage Fig. 6. Input Adm ittance 4 3.5 = 25ºC 18 15 3 2.5 2 = 6A 3A 15A 12 9 6 3 = 125ºC 25ºC -4ºC 1 5 6 7 8 9 1 11 12 13 14 15 16 17 3 4 5 6 7 8 9 1 V G E V G E 23 IXYS All rights reserved
IXGH 4N6B2D1 IXGT 4N6B2D1 Fig. 7. Transconductance Fig. 8. Dependence of Turn-Off Ene r gy on R G 6 3 g f s - Siemens 5 4 3 2 = -4ºC 25ºC 125ºC - millijoules 2.7 2.4 2.1 1.8 = 125ºC = 4V = 6A = 3A 1.9.6 = 15A 3 6 9 12 15 18.3 3 6 9 12 15 18 21 24 27 3 R G - Ohms 2.7 Fig. 9. Dependence of Turn-Off Ene r gy on I c 2.7 Fig. 1. Dependence of Turn-Off Energy on Temperature 2.4 2.1 = 4V 2.4 2.1 = 4V = 6A - MilliJoules 1.8.9 = 125ºC - millijoules 1.8.9 = 3A.6.3 = 25ºC 15 2 25 3 35 4 45 5 55 6.6.3 = 15A 25 35 45 55 65 75 85 95 15 115 125 - Degrees Centigrade 6 Fig. 11. Dependence of Turn-Off Switching Time on R G 3 Fig. 12. Dependence of Turn-Off Sw itching Time on I c Switching Time - nanosecond 55 5 45 4 35 3 25 2 15 t fi - - - - - - = 125ºC = 4V = 6A = 3A = 15A Switching Time - nanosecond 275 25 225 2 175 15 125 1 = 125ºC = 25ºC t fi - - - - - - = 4V 1 3 6 9 12 15 18 21 24 27 3 R G - Ohms IXYS reserves the right to change limits, test conditions, and dimensions. 75 15 2 25 3 35 4 45 5 55 6 IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,16 5,17,58 5,49,961 5,187,117 5,486,715 6,36,728B1 6,259,123B1 6,36,728B1 4,85,72 4,931,844 5,34,796 5,63,37 5,237,481 5,381,25 6,44,65B1 6,162,665 6,534,343
IXGH 4N6B2 IXGT 4N6B2 Switching Time - nanosecond 275 25 225 2 175 15 125 1 Fig. 13. Dependence of Turn-Off Sw itching Tim e on Temperature t fi - - - - - - = 4V = 6A = 3A = 15A V G E 15 12 9 6 3 = 3V = 3A I G = 1mA Fig. 14. Gate Charge 75 25 35 45 55 65 75 85 95 15 115 125 - Degrees Centigrade 1 2 3 4 5 6 7 8 9 1 Q G - nanocoulombs Fig. 15. Capacitance 1 f = 1 MHz Capacitance - p F 1 1 C ies C oes 1 C res 5 1 15 2 25 3 35 4.45 Fig. 16. Maximum Transient Thermal Resistance.4 R (th) J C - (ºC/W).35.3.25.2.15.1.5 1 1 1 1 Pulse Width - milliseconds 23 IXYS All rights reserved
IXGH 4N6B2D1 IXGT 4N6B2D1 IF 6 A 5 4 =15 C 1 Q r nc 8 6 = 1 C = 3V = 6A = 3A = 15A I RM 3 A 25 2 = 1 C = 3V = 6A = 3A = 15A 3 2 1 =1 C =25 C 4 2 15 1 5 1 2 3 V 1 A/µs 1 2 4 6 A/µs 8 1 V F -di F -di F Fig. 17. Forward current versus V F Fig. 18. Reverse recovery charge Q r versus -di F Fig. 19. Peak reverse current I RM versus -di F K f 2. 1. I RM 9 ns t fr t rr 15.75 8 = 6A = 3A = 15A = 1 C = 3V V FR 2 V 1 = 1 C = 3A t fr V FR 1. µs.5 7.5 5.25 Q r. 4 8 12 C 16 6 2 4 6 A/µs 8 1 -di F. 2 4 6 A/µs 8 1 di F Fig. 2. Dynamic parameters Q r, I RM Fig. 21. Recovery time t rr versus -di F Fig. 22. Peak forward voltage V FR and versus t fr versus di F 1 K/W.1 Z thjc Constants for Z thjc calculation: i R thi (K/W) t i (s) 1.52.52 2.193.3 3.25.162.1 DSEP 29-6.1.1.1.1.1.1 s 1 t Fig. 23. Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,16 5,17,58 5,49,961 5,187,117 5,486,715 6,36,728B1 6,259,123B1 6,36,728B1 4,85,72 4,931,844 5,34,796 5,63,37 5,237,481 5,381,25 6,44,65B1 6,162,665 6,534,343