Data Sheet, Doc. No. 5SYA 457-8-27 5SNE E333 HiPak Chopper IGBT Module VCE = 33 V IC = A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance Improved high reliability package Maximum rated values ) Parameter Symbol Conditions min max Unit Collector-emitter voltage VCES VGE = V, Tvj 25 C 33 V DC collector current IC TC = C, Tvj = 5 C A Peak collector current ICM tp = ms 2 A Gate-emitter voltage VGES -2 2 V Total power dissipation Ptot TC = 25 C, Tvj = 5 C, per switch 98 W DC forward current IF A Peak forward current IFRM tp = ms 2 A Surge current IFSM VR = V, Tvj = 5 C, tp = ms, half-sinewave 9 A IGBT short circuit SOA tpsc VCC = 25 V, VCEM CHIP 33 V VGE 5 V, Tvj 5 C µs Isolation voltage Visol min, f = 5 Hz 6 V Junction temperature Tvj 75 C Junction operating temperature Tvj(op) -5 5 C Case temperature TC -5 5 C Storage temperature Tstg -5 25 C Mounting torques 2) Mt Main terminals, M8 screws 8 Ms Base-heatsink, M6 screws 4 6 ) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 6747 2) for detailed mounting instructions refer to ABB Document No. 5SYA 239 Mt2 Auxiliary terminals, M4 screws 2 3 Nm
IGBT characteristic values 3) Parameter Symbol Conditions min typ max Unit Collector (-emitter) breakdown voltage Collector-emitter 4) saturation voltage V(BR)CES VGE = V, IC = ma, Tvj = 25 C 33 V VCE sat IC = A, VGE = 5 V Collector cut-off current ICES VCE = 33 V, VGE = V Tvj = 25 C 2.5 2.9 V Tvj = 25 C 3. 3.4 V Tvj = 5 C 3.25 V Tvj = 25 C.4.67 ma Tvj = 25 C 3.5 27 ma Tvj = 5 C 67 ma Gate leakage current IGES VCE = V, VGE = 2 V, Tvj = 25 C -5 5 na Gate-emitter threshold voltage VGE(th) IC = 6 ma, VCE = VGE, Tvj = 25 C 5 7 V Gate charge QG IC = A, VCE = 8 V, VGE = -5 V..5 V 7.33 µc Input capacitance Cies nf Output capacitance Coes VCE = 25 V, VGE = V, f = MHz, Tvj = 25 C 8.4 nf Reverse transfer capacitance Cres 2.57 nf Internal gate resistance RGint.9 W Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching energy Turn-off switching energy Short circuit current td(on) tr td(off) tf Eon Eoff 3) Characteristic values according to IEC 6747 9 4) Collector-emitter saturation voltage is given at chip level ISC VCC = 8 V, IC = A, RG =.5 W, CGE = 22 nf, VGE = 5 V, Ls = nh, inductive load VCC = 8 V, IC = A, RG = 2.2 W, CGE = 22 nf, VGE = 5 V, Ls = nh, inductive load VCC = 8 V, IC = A, RG =.5 W, CGE = 22 nf, VGE = ±5 V, Ls = nh, inductive load VCC = 8 V, IC = A, RG = 2.2 W, CGE = 22 nf, VGE = ±5 V, Ls = nh, inductive load tpsc µs, VGE = 5 V, VCC = 25 V, VCEM CHIP 33 V Tvj = 25 C 56 ns Tvj = 25 C 53 ns Tvj = 5 C 53 ns Tvj = 25 C 24 ns Tvj = 25 C 255 ns Tvj = 5 C 26 ns Tvj = 25 C 465 ns Tvj = 25 C 64 ns Tvj = 5 C 7 ns Tvj = 25 C 35 ns Tvj = 25 C 385 ns Tvj = 5 C 4 ns Tvj = 25 C 25 mj Tvj = 25 C 64 mj Tvj = 5 C 8 mj Tvj = 25 C 24 mj Tvj = 25 C 73 mj Tvj = 5 C 87 mj Tvj = 5 C 427 A 2 5SNE E333 Doc. No. 5SYA 457-8-27
Diode characteristic values 5) Parameter Symbol Conditions min typ max Unit Tvj = 25 C 2.5 2.5 V Forward voltage 6) VF IF = A Tvj = 25 C 2.25 2.6 V Tvj = 5 C 2.2 V Tvj = 25 C A Peak reverse recovery current IRM Tvj = 25 C 8 A Tvj = 5 C 23 A Tvj = 25 C 63 µc Recovered charge Reverse recovery time Qr trr VCC = 8 V, IF = A, VGE = 5 V, RG =.5 W, CGE = 22 nf, di/dt = 4 ka/µs Ls = nh, inductive load Tvj = 25 C 2 µc Tvj = 5 C 8 µc Tvj = 25 C 25 ns Tvj = 25 C 44 ns Tvj = 5 C 63 ns Tvj = 25 C 7 mj Reverse recovery energy Erec Tvj = 25 C 2 mj Tvj = 5 C 42 mj 5) Characteristic values according to IEC 6747 2 6) Forward voltage is given at chip level Package properties 7) Parameter Symbol Conditions min typ max Unit IGBT thermal resistance junction to case Diode thermal resistance junction to case IGBT thermal resistance 2) case to heatsink Diode thermal resistance 2) case to heatsink Rth(j-c)IGBT.3 K/W per switch Rth(j-c)DIODE.25 K/W Rth(c-s)IGBT IGBT per switch, l grease = W/m x K.2 K/W Rth(c-s)DIODE Diode per switch, l grease = W/m x K.24 K/W Partial discharge extinction voltage Ve f = 5 Hz, QPD pc (acc. To IEC 6287) 35 V Comparative tracking index CTI 6 Module stray inductance Lσ CE per switch 2 nh TC = 25 C.83 Resistance, terminal-chip RCC +EE per switch TC = 25 C.3 TC = 5 C.2 mω 2) For detailed mounting instructions refer to ABB Document No. 5SYA 239 Mechanical properties 7) Parameter Symbol Conditions min typ max Unit Dimensions L x W x H Typical 9 x 4 x 38 mm Clearance distance in air da according to IEC 6664- and EN 524- Term. to base: 9 Term. to term: 9 mm Surface creepage distance ds according to IEC 6664- and EN 524- Term. to base: 28.2 Term. to term: 28.2 mm Mass m 2 g 7) Package and mechanical properties according to IEC 6747 5 3 5SNE E333 Doc. No. 5SYA 457-8-27
Electrical configuration Outline drawing 2) Note: all dimensions are shown in millimeters 2) For detailed mounting instructions refer to ABB Document No. 5SYA 239 This is an electrostatic sensitive device, please observe the international standard IEC 6747-, chap. VIII. This product has been designed and qualified for Industrial Level. 4 5SNE E333 Doc. No. 5SYA 457-8-27
2 2 V CE = V GE 5 25 C 5 IC [A] 25 C 5 C IC [A] 5 5 5 C 25 C 25 C V GE = 5 V 2 3 4 5 5 6 7 8 9 2 3 V CE [V] V GE [V] Fig. Typical on-state characteristics, chip level Fig. 2 Typical transfer characteristics, chip level 2 2 5 9 V 7 V 5 V 3 V 5 9 V 7 V 5 V 3 V IC [A] IC [A] V V 5 9 V 5 9 V T vj = 25 C 2 3 4 5 T vj = 5 C 2 3 4 5 6 V CE [V] V CE [V] Fig. 3 Typical output characteristics, chip level Fig. 4 Typical output characteristics, chip level 5 5SNE E333 Doc. No. 5SYA 457-8-27
5 4 V CC = 8 V V GE = ±5 V R Gon =.5 ohm R Goff = 2.2 ohm C GE = 22 nf L s = nh E on 9 8 7 6 V CC = 8 V I C = A V GE = ±5 V C GE = 22 nf L s = nh Eon, Eoff [J] 3 2 E off Eon, Eoff [J] 5 4 E on 3 E off 2 T vj = 25 C T vj = 5 C 5 5 2 T vj = 25 C T vj = 5 C 5 5 I C [A] R G [ohm] Fig. 5 Typical switching energies per pulse vs. collector current Fig. 6 Typical switching energies per pulse vs. gate resistor t d(off) V CC = 8 V I C = A V GE = ±5 V C GE = 22 nf L s = nh t d(off) t d(on) td(on), tr, td(off), tf [µs].. t f t d(on) t r V CC = 8 V V GE = ±5 V R Gon =.5 ohm R Goff = 2.2 ohm C GE = 22 nf L s = nh 5 5 2 td(on), tr, td(off), tf [µs]. 5 5 t r t f I C [A] R G [ohm] Fig. 7 Typical switching times vs. collector current Fig. 8 Typical switching times vs. gate resistor 6 5SNE E333 Doc. No. 5SYA 457-8-27
V GE = V f OSC = MHz V OSC = 5 mv 2 5 V CC = 8 V C ies V CC = 25 V C [nf] VGE [V] C oes 5 C res 5 5 2 25 3 35 V ce [V] I C = A T vj = 25 C 2 4 6 Q g [µc] Fig. 9 Typical capacitances vs. collector-emitter voltage Fig. Typical gate charge characteristics 2.5 V CC 25 V, T vj = 5 C V GE = ±5 V, R G = 2.2 Ohm, C GE = 22 nf 2. ICpulse / IC.5..5. chip module 5 5 2 25 3 35 V CE [V] Fig. Turn-off safe operating area (RBSOA) 7 5SNE E333 Doc. No. 5SYA 457-8-27
2 T vj = 25 C T vj = 5 C 3 75 5 T vj = 25 C T vj = 5 C Erec [mj], Irr [A] 5 5 5 5 2 I rr E rec Q rr V CC = 8 V V GE = ±5 V R Gon =.5 ohm C GE = 22 nf L s = nh 225 5 75 Qrr [µc] Erec [mj], Irr [A], Qrr [µc] 25 75 5 25 Q rr E rec I rr RG = 5 Ohm RG = Ohm RG = 6.8 Ohm RG = 4.7 Ohm RG = 3.3 Ohm RG = 2.7 Ohm V CC = 8 V I F = A C GE = 22 nf L s = nh 2 3 4 5 RG = 2.2 Ohm RG =.8 Ohm RG =.5 Ohm RG =.2 Ohm I F [A] di/dt [ka/µs] Fig. 2 Typical reverse recovery characteristics vs. forward current Fig. 3 Typical reverse recovery characteristics vs. di/dt 2 5 2 5 V CC 25 V di/dt 5.3 ka/µs T vj = 5 C L σ = nh IF [A] 25 C 25 C IR [A] 5 C 5 5..5..5 2. 2.5 3. V F [V] 5 5 2 25 3 35 V R [V] Fig. 4 Typicial diode forward characteristics chip level Fig. 5 Safe operating area diode (SOA) 8 5SNE E333 Doc. No. 5SYA 457-8-27
. Analytical function for transient thermal impedance: Zth(j-c) [K/W] IGBT, DIODE.. Z th(j-c) Diode Z th(j-c) IGBT DIODE IGBT Z th (j-c) (t) = n i= R i (- e -t/ t i i 2 3 4 5 R i(k/kw) 8.78 2.6.96.948 t i(ms) 27.4 3. 7.55.57 R i(k/kw) 7. 4.28.92.92 t i(ms) 23.6 3. 7.53.57 ) Fig. 6.... t [s] Thermal impedance vs. time Related documents: 5SYA 242 Failure rates of HiPak modules due to cosmic rays 5SYA 243 Load cycle capability of HiPaks 5SYA 245 Thermal runaway during blocking 5SYA 253 Applying IGBT 5SYA 258 Surge currents for IGBT diodes 5SYA 293 Thermal design and temperature ratings of IGBT modules 5SYA 298 Paralleling of IGBT modules 5SZK 9 Specification of environmental class for HiPak Storage 5SZK 92 Specification of environmental class for HiPak Transportation 5SZK 93 Specification of environmental class for HiPak Operation (Industry) 5SZK 92 Specification of environmental class for HiPak ABB Switzerland Ltd. Semiconductors Fabrikstrasse 3 CH-56 Lenzburg Switzerland We reserve the right to make technical changes or to modify the contents of this document without prior notice. We reserve all rights in this document and the information contained therein. Any reproduction or utilization of this document or parts thereof for commercial purposes without our prior written consent is forbidden. Any liability for use of our products contrary to the instructions in this document is excluded. 5SNE E333 Doc. No. 5SYA 457-8-27 Phone: +4 58 586 49 Fax: +4 58 586 36 E-Mail: abbsem@ch.abb.com Internet: www.abb.com/semiconductors