Prduct Data Sheet 4N3/ 4N37 (M, S, S-TA1) Spec N. :DS-7-99-12 Effective Date: 8/22/217 Revisin: E LITE-ON DCC RELEASE BNS-OD-FC1/A4 LITE-ON Technlgy Crp. / Optelectrnics N.9,Chien 1 Rad, Chung H, New Taipei City 238, Taiwan, R.O.C. Tel: 886-2-2222-6181 Fax: 886-2-2221-1948 / 886-2-2221-66 http://www.liten.cm/pt
1. DESCRIPTION 1.1 Features Current transfer rati (CTR : MIN. % at I F = ma, V CE = V, Ta=2 C) High input-utput islatin vltage 4N3 series : Vis = 3,Vrms 4N37 series : Vis = 1,Vrms Respnse time (tr : TYP. 3µs at Vcc = V, IC = 2mA, RL = Ω) Dual-in-line package : 4N3, 4N37 Wide lead spacing package : 4N3M, 4N37M Surface munting package : 4N3S, 4N37S Tape and reel packaging : 4N3S-TA, 4N37S-TA, 4N3S-TA1, 4N37S-TA1 Safety apprval * UL apprved (N. E113898) * CSA apprved (N. CA9133-1) * FIMKO apprved ( N. 193422-1) * VDE apprved ( N. 41248) * BSI apprved (N. 918-9) * CQC apprved (N.CQC161921-2) Creepage distance > 8. mm ; Clearance > 8. mm The relevant mdels are the mdels Apprved by VDE accrding t DIN EN 6747-- Apprved Mdel N.: 4N3-V / 4N37-V / 4N3M-V / 4N37M-V / 4N3S-V / 4N37S-V / 4N3STA-V / 4N37STA-V / 4N3STA1-V / 4N37STA1-V VDE apprved N.: 41248 (Accrding t the specificatin DIN EN 6747--) Operating islatin vltage VIORM : 42V (Peak) Transient vltage VTR : 6V (Peak) Pllutin : 2 (Accrding t VDE 1-1 : 1997-4) Clearances distance (Between input and utput) : 7.mm (MIN.) Creepage distance (Between input and utput) : 7.mm (MIN.) Islatin thickness between input and utput :.4mm (MIN.) Safety limit values Current (Isi) : 4mA (Dide side) Pwer (Psi) : 7mW (Phttransistr side) Temperature(Tsi) : 17 C In rder t keep safety electric islatin f phtcupler, please set the prtective circuit t keep within safety limit values when the actual applicatin equipment trubled. Indicatin f VDE apprval prints " " n sleeve package. 1/1
RHS Cmpliance All materials be used in device are fllwed EU RHS directive (N.22/9/EC). ESD pass HBM 8V/MM2V MSL class1 1.2 Applicatins Pwer Supply regulatrs Digital lgic inputs Micrprcessr inputs 2/1
2. PACKAGE DIMENSIONS 2.1 4N3 2.2 4N3M 2.3 4N3S Ntes : 1. Year date cde. 2. 2-digit wrk week. 3. Factry identificatin mark shall be marked (W: China-CZ, Y: Thailand X: China-TJ). 4. VDE ptin. Dimensins in millimeters(inches). 3/1
2.4 4N37 2. 4N37M 2.6 4N37S Ntes : 1. Year date cde. 2. 2-digit wrk week. 3. Factry identificatin mark shall be marked (W: China-CZ, Y: Thailand X: China-TJ). 4. VDE ptin. Dimensins in millimeters(inches). 4/1
3. TAPING DIMENSIONS 3.1 4N3S-TA, 4N37S-TA : 3.2 4N3S-TA1, 4N37S-TA1 : Descriptin Symbl Dimensin in mm (inch) Tape wide W 16±.3 (.63) Pitch f sprcket hles P 4±.1 (.1) Distance f cmpartment Distance f cmpartment t cmpartment F 7.±.1 (.29) P 2 2±.1 (.79) P 1 12±.1 (.472) 3.3 Quantities Per Reel Package Type TA/TA1 Quantities (pcs) /1
4. RATING AND CHARACTERISTICS 4.1 Abslute Maximum Ratings at Ta=2 C Parameter Symbl Rating Unit Frward Current I F 6 ma Input Reverse Vltage V R 6 V Pwer Dissipatin P mw Cllectr - Emitter Vltage V CEO 3 V Emitter - Cllectr Vltage V ECO 7 V Output Cllectr - Base Vltage V CBO 7 V Cllectr Current I C ma Cllectr Pwer Dissipatin P C 3 mw Ttal Pwer Dissipatin P tt 3 mw *1 Islatin Vltage 4N3 series V is 3, V rms 4N37 series 1, V rms Operating Temperature T pr - ~ + C Strage Temperature T stg - ~ + C *2 Sldering Temperature T sl 26 C *1. AC Fr 1 Minute, R.H. = 4 ~ 6% Islatin vltage shall be measured using the fllwing methd. (1) Shrt between ande and cathde n the primary side and between cllectr and emitter n the secndary side. (2) The islatin vltage tester with zer-crss circuit shall be used. (3) The wavefrm f applied vltage shall be a sine wave. *2. Fr Secnds 6/1
4.2 ELECTRICAL OPTICAL CHARACTERISTICS at Ta=2 C PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS Frward Vltage VF 1.2 1. V IF=mA INPUT Reverse Current IR µa VR=4V Terminal Capacitance Ct pf V=, f=1khz Cllectr Dark Current Ta=2 C na VCE=V, IF= ICEO Ta= C µa VCE=3V, IF= OUTPUT Cllectr-Emitter Breakdwn Vltage BVCEO 3 V IC=.1mA IF= Emitter-Cllectr Breakdwn Vltage BVECO 7 V IE=µA IF= Cllectr-Base Breakdwn Vltage BVCBO 7 V IC=.1mA IF= Cllectr Current IC ma IF=mA *Current Transfer Rati CTR % VCE=V Cllectr-Emitter Saturatin Vltage VCE(sat).3 V IF=mA IC=2mA TRANSFER CHARACTERISTICS Islatin Resistance Ris 1 11 Ω DCV 4 ~ 6% R.H. Flating Capacitance Cf 1 2. pf V=, f=1mhz Respnse Time (Rise) tr 3 µs VCE=V, IC=2mA Respnse Time (Fall) tf 3 µs RL=Ω *CTR I C = % I F 7/1
4.3 ISOLATION SPECIFICATION ACCORDING TO VDE Parameter Symbl Cnditins Rating Unit Remark Class f envirnmental test - DIN IEC68 //21 - Pllutin - DIN VDE1 2 - Maximum Operating Islatin Vltage Partial Discharge Test Vltage (Between Input and Output) V IORM - 42 V PEAK Diagram 1 tp=6s, qc<pc 63 V PEAK Vpr Diagram 2 tp=1s, qc<pc 788 V PEAK Refer t the Diagram 1, 2 Maximum Over-Vltage V INITIAL t INI = s 6 V PEAK Safety Maximum Ratings 1) Case Temperature Tsi I F =, Pc = 17 C 2) Input Current Isi Pc= 4 ma Refer t the Figure 1, 3 3) Electric Pwer (Output r Ttal Pwer Issipatin) Islatin Resistance Psi - 7 mw Ta=Tsi MIN. 9 (Test Vltage Between Input and Output : DCV) R ISO Ta=Tpr(MAX.) MIN. 11 Ta=2 C MIN. 12 Ω Precautins in perfrming islatin test * Partial discharge test methds shall be the nes accrding t the specificatins f DIN EN 6747-- * Please dn't carry ut islatin test (Vis) ver V INITIAL,This prduct deterirates islatin characteristics by partial discharge due t applying high vltage (ex. V INITIAL ). And there is pssibility that this prduct ccurs partial discharge in perating islatin vltage (V IORM) 8/1
4.4 PARTIAL DISCHARGE TEST METHOD Methd (A) fr type testing and randm testing. V VINTIAL t1 tini t3 t2 Vpr tp tb t4 VIORM t t1, t2 = 1 t s t3, t4 = 1s tp (Partial Discharge Measuring Time)= 6s tb = 62s tini = s Methd (B) fr rutine testing. V Vpr VIORM t3, t4 =.1s tp (Partial Discharge Measuring Time)= 1s tb = 1.2s t3 tp tb t4 t The partial discharge level shall nt exceed pc during the partial discharge measuring time interval t p under the test cnditins shwn abve. 9/1
. CHARACTERISTICS CURVES Fig.1 Frward Current vs. Ambient Temperature Frward current I (ma) F F 8 6 4 2 Fig.3 Frward Current vs. Frward Vltage Frward current I (ma) Frward vltage V F(V) Fig.2 Cllectr Pwer Dissipatin vs. Ambient Temperature - -2 2 7 12 - -2 2 7 12 2 2 2 1 Ambient temperature Ta ( C). 1. 1. 2. 2. 3. Cllectr pwer dissipatin Pc (mw) 2 Fig.4 Current Transfer Rati vs. Frward Current Current Transfer rati CTR (%) V = V Ta= 2 C 4 3 2 Ambient temperature Ta ( C) R = k.1.2. 1 2 2 Frward current I F(mA) Fig. Cllectr Current vs. Cllectr-emitter Vltage Cllectr current Ic (ma) 1 Ta= 2 C I F= 4mA 3mA 2mA ma ma Pc(MAX.) Cllectr-emitter vltage V CE (V) 1 Fig.6 Relative Current Transfer Rati vs. Ambient Temperature Relative current transfer rati (%) 3 2 I F= ma V = V - -2 2 7 Ambient temperature Ta ( C) /1
Fig.7 Cllectr-emitter Saturatin Vltage vs. Ambient Temperature Cllectr-emitter saturatin vltage VCE(sat)(V).3.2.1 - IF= ma IC= 2mA -2 2 7 - Fig.8 Cllectr Dark Current vs. Ambient Temperature -6-7 -8-9 - -12-13 V = V -2 2 4 6 12 O O Ambient temperature Ta ( C) Ambient temperature Ta ( C) Cllectr dark current ICEO (A) Fig.9 Respnse Time vs. Lad Resistance Fig. Frequency Respnse Respnse time ( s) V = V Ic= 2mA O Ta= 2 C 2 2 1..2.1..1.2. 1 2 tf td ts tr Lad resistance RL(k ) 2 Vltage gain Av (db) - - -1 R L = k 1k -2. 1 2 2 Frequency f (khz) V = V Ic= 2mA O Ta= 2 C 2 Fig.11 Cllectr-emitter Saturatin Vltage vs. Frward Current Cllectr-emitter saturatin vltage VCE(sat)(V) 7 6 4 3 2 1 Ic=.mA 1mA 2mA 3mA ma 7mA O Ta= 2 C 1 2 2 Frward current IF(mA) 3 Test Circuit fr Respnse Time Input RD Vcc Input Output RL Output Test Circuit fr Frequency Respnse Vcc RD RL td tr Output ts tf % 9% 11/1
6. TEMPERATURE PROFILE OF SOLDERING 6.1 IR Reflw sldering (JEDEC-STD-2C cmpliant) One time sldering reflw is recmmended within the cnditin f temperature and time prfile shwn belw. D nt slder mre than three times. Prfile item Cnditins Preheat - Temperature Min (T Smin) - Temperature Max (T Smax) - Time (min t max) (ts) C 2 C 9±3 sec Sldering zne - Temperature (T L) - Time (t L) Peak Temperature (T P) Ramp-up rate Ramp-dwn rate 217 C 6 sec 26 C 3 C / sec max. 3~6 C / sec Ramp-up 2 sec TP 26 C Temperature ( C) Tsmin C TL 217 C Tsmax 2 C 6 sec tl (Sldering) Ramp-dwn 2 C 6 ~ 12 sec ts (Preheat) 3~7 sec Time (sec) 12/1
6.2 Wave sldering (JEDEC22A111 cmpliant) One time sldering is recmmended within the cnditin f temperature. Temperature: 26+/- C Time: sec. Preheat temperature:2 t 14 C Preheat time: 3 t 8 sec. 6.3 Hand sldering by sldering irn Allw single lead sldering in every single prcess. One time sldering is recmmended. Temperature: 38+/- C Time: 3 sec max. 13/1
7. RRECOMMENDED FOOT PRINT PATTERNS (MOUNT PAD) Unit: mm 14/1
8. Naming rule 4N 3X (1)-( 2) DEVICE PART NUMBER (1) N suffix = Dual-in-Line package M = Wide lead spacing package S = Surface munting package (2) TAPING TYPE (TA,TA1 r nne) have tape and reel slutin. Please refer t rientatin f taping n Page P Example : 4N3S-TA1 4N 3X(1)( 2)-V DEVICE PART NUMBER (1) N suffix = Dual-in-Line package M = Wide lead spacing package S = Surface munting package (2) TAPING TYPE (TA,TA1 r nne) have tape and reel slutin. Please refer t rientatin f taping n Page P (3) VDE rder ptin Example : 4N3STA1-V-G 9. Ntes: LiteOn is cntinually imprving the quality, reliability, functin r design and LiteOn reserves the right t make changes withut further ntices. The prducts shwn in this publicatin are designed fr the general use in electrnic applicatins such as ffice autmatin equipment, cmmunicatins devices, audi/visual equipment, electrical applicatin and instrumentatin. Fr equipment/devices where high reliability r safety is required, such as space applicatins, nuclear pwer cntrl equipment, medical equipment, etc, please cntact ur sales representatives. When requiring a device fr any specific applicatin, please cntact ur sales in advice. If there are any questins abut the cntents f this publicatin, please cntact us at yur cnvenience. The cntents described herein are subject t change withut prir ntice. Immerge unit s bdy in slder paste is nt recmmended. 1/1