NTDN Power MOSFET Amps, Volts NChannel Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features PbFree Packages are Available AMPERES VOLTS R DS(on) =. m (Typ.) Typical Applications Power Supplies Converters Power Motor Controls Bridge Circuits G NChannel D MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol Value Unit DraintoSource Voltage V DSS GatetoSource Voltage Continuous V GS Drain Current Continuous @ T A = 5 C Single Pulse (t p s) I D I DM Adc Apk Total Power Dissipation @ T A = 5 C P D 75 W Operating and Storage Temperature Range T J, T stg 55 to 5 Single Pulse DraintoSource Avalanche Energy Starting (V DD =, V GS =, L =. mh, I L (pk) = A, R G = 5 ) Thermal Resistance JunctiontoCase JunctiontoAmbient (Note ) JunctiontoAmbient (Note ) Maximum Lead Temperature for Soldering Purposes, /8 from case for seconds C E AS 5 mj R JC R JA R JA.65 67 C/W T L 6 C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.. When surface mounted to an FR board using in. pad size, (Cu Area.7 sq in).. When surface mounted to an FR board using minimum recommended pad size, (Cu Area. sq in). CASE 69C STYLE ORDERING INFORMATION Device Package Shipping NTDN 75 Units/Rail NTDNG S Gate MARKING DIAGRAM Drain YWW D NG Drain DN = Device Code Y = Year WW = Work Week G = PbFree Device Source NTDNT 5 Tape & Reel NTDNTG (PbFree) (PbFree) 75 Units/Rail 5 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8/D. Semiconductor Components Industries, LLC, 6 February, 6 Rev. Publication Order Number: NTDN/D
NTDN ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note ) (V GS =, I D = 5 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (V DS =, V GS = ) (V DS =, V GS = ) (V DS =, V GS =, T J = 5 C) V (BR)DSS GateBody Leakage Current (V GS = ±, V DS = ) I GSS ± nadc ON CHARACTERISTICS (Note ) Gate Threshold Voltage (Note ) (V DS = V GS, I D = 5 Adc) Threshold Temperature Coefficient (Negative) Static DraintoSource OnResistance (Note ) (V GS =, I D = Adc) (V GS =, I D = Adc) (V GS =.5, I D = 5 Adc) I DSS V GS(th). R DS(on) Forward Transconductance (Note ) (V DS =, I D = 5 Adc) g FS mhos DYNAMIC CHARACTERISTICS Input Capacitance C iss pf Output Capacitance (V DS =, V GS =, f =. MHz) C oss 5 Transfer Capacitance C rss 75 SWITCHING CHARACTERISTICS (Note ) TurnOn Delay Time Rise Time (V DD =, I D = Adc, t r 8 55 TurnOff Delay Time V GS =, R G =.5 ) t d(off) 5 6.5 5.5....8...5.5 mv/ C Adc mv/ C m t d(on) 7. 5 ns Fall Time t f TurnOn Delay Time t d(on).5 ns Rise Time (V DD =, I D = 5 Adc, t r 5 TurnOff Delay Time V GS =.5, R G =.5 ) t d(off) 5 Fall Time t f 7 Gate Charge (V DS =, I D = Adc, V GS =.5 ) (Note ) SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (I S = 5 Adc, V GS = ) (I S = Adc, V GS = ) (Note ) (I S = 5 Adc, V GS =, T J = 5 C) Reverse Recovery Time (I S = Adc, V GS =, di S /dt = A/ s) (Note ) Q T. nc Q. Q 8.5 V SD.95..8. t rr ns t a.5 t b 5.5 Reverse Recovery Stored Charge Q RR. C. Pulse Test: Pulse Width s, Duty Cycle %.. Switching characteristics are independent of operating junction temperatures.
NTDN 6 5 5. V V GS = 9 V 8 V 7 V 6 V. V 5 V.6 V. V V.6 V V 6 V DS V 5 T J = C T J = 55 C 5 6 7 8 5 6 7 8 V DS, DRAINTOSOURCE VOLTAGE (VOLTS) V GS, GATETOSOURCE VOLTAGE (VOLTS) Figure. OnRegion Characteristics Figure. Transfer Characteristics R DS(on), DRAINTOSOURCE RESISTANCE ( ).... 5 6 7 8 I D = 5 A 9 R DS(on), DRAINTOSOURCE RESISTANCE ( ).7.6.5... V GS =.5 V V GS = V. 5 6 V GS, GATETOSOURCE VOLTAGE (VOLTS) Figure. OnResistance versus GatetoSource Voltage Figure. OnResistance versus Drain Current and Gate Voltage R DS(on), DRAINTOSOURCE RESISTANCE (NORMALIZED).6...8 I D = 5 A V GS = V.6. 5 5 5 5 75 5 5 8 6 T J, JUNCTION TEMPERATURE ( C) Figure 5. OnResistance Variation with Temperature I DSS, LEAKAGE (na). V GS = V T J = 5 C T J = C V DS, DRAINTOSOURCE VOLTAGE (VOLTS) Figure 6. DraintoSource Leakage Current versus Voltage
NTDN 5 C iss V DS = V V GS = V C, CAPACITANCE (pf) 5 5 C rss C iss C oss C rss 5 5 5 5 V GS V DS GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation V GS, GATETOSOURCE VOLTAGE (VOLTS) 5 V DS Q Q T Q 8 Q G, TOTAL GATE CHARGE (nc) V GS I D = A V DS = V V GS =.5 V 6 8 6 V DS, DRAINTOSOURCE VOLTAGE (VOLTS) t, TIME (ns) V DS = V I D = A V GS = V t f t d(on) t r t d(off) R G, GATE RESISTANCE ( ) Figure 8. GatetoSource and DraintoSource Voltage versus Total Charge Figure 9. Resistive Switching Time Variation versus Gate Resistance DRAINTOSOURCE DIODE CHARACTERISTICS I S, SOURCE CURRENT (AMPS) 5 9 6 V GS = V...5.6.7.8.9.. V SD, SOURCETODRAIN VOLTAGE (VOLTS) Figure. Diode Forward Voltage versus Current
NTDN PACKAGE DIMENSIONS CASE 69C ISSUE O V S F B R G L A K D PL J H C. (.5) M T T SEATING PLANE E U Z INCHES MILLIMETERS DIM MIN MAX MIN MAX A.5.5 5.97 6. B.5.65 6.5 6.7 C.86.9.9.8 D.7.5.69.88 E.8..6.58 F.7.5.9. G.8 BSC.58 BSC H...87. J.8..6.58 K...6.89 L.9 BSC.9 BSC R.8.5.57 5.5 S.5..6. U..5 V.5.5.89.7 Z.55.9 STYLE : PIN. GATE. DRAIN. SOURCE. DRAIN SOLDERING FOOTPRINT* 6...58...8 5.8.8.6.6 6.7. SCALE : mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 6, Phoenix, Arizona 858 USA Phone: 88977 or 886 Toll Free USA/Canada Fax: 889779 or 8867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 889855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 9 Kamimeguro, Meguroku, Tokyo, Japan 55 Phone: 857785 5 ON Semiconductor Website: Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTDN/D