Optocoupler with Transistor Output 17197_4 DESCRIPTION The HS817 series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package. AGENCY APPROVALS BSI: EN 665, EN 695-1:26 FIMKO UL file no. E52744 cul tested to CSA 22.2 bulletin 5A 17197_7 C 4 1 A E 3 2 C FEATURES Rated impulse voltage (transient overvoltage) V IOTM = 6 kv peak Isolation test voltage (partial discharge test voltage) V pd = 1.6 kv Rated isolation voltage (RMS includes DC) V IOWM = 6 V RMS Rated recurring peak voltage (repetitive) V IORM = 85 V peak Creepage current resistance according to IEC 112, comparative tracking index: CTI 25 Thickness through insulation.4 mm Isolation materials according to UL 94 V-O Pollution degree 2 (resp. IEC 664) Climatic classification 55/1/21 (IEC 68 part 1) Low temperature coefficient of CTR G = leadform 1.16 mm; provides creepage distance > 8 mm, suffix letter G is not marked on the optocoupler Compliant to RoHS Directive 22/95/EC and in accordance to WEEE 22/96/EC APPLICATIONS Switch-mode power supplies Line receiver Computer peripheral interface Microprocessor system interface ORDERING INFORMATION H S 8 1 7 x x DIP-# DIP-#, 4 mil PART NUMBER CTR BIN PACKAGE OPTION 7.62 mm 1.16 mm AGENCY CERTIFIED/PACKAGE CTR (%) UL, cul, BSI, FIMKO 1 to 3 13 to 26 DIP-4 HS817 HS817B DIP-4, 4 mil HS817G HS817BG Notes G = leadform 1.16 mm; G is not marked on the body. For additional information on the available options refer to option information. Rev., 27-Jul-11 1 Document Number: 83548 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91
ABSOLUTE MAXIMUM RATINGS (, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V R 6 V Forward current 6 ma Forward surge current t p 1 μs SM 1.5 A Power dissipation T amb 25 C P diss 1 mw Junction temperature T j 125 C OUTPUT Collector emitter voltage V CEO 7 V Emitter collector voltage V ECO 7 V Collector current I C 5 ma Collector peak current t p /T =.5, t p 1 ms I CM 1 ma Power dissipation T amb 25 C P diss 15 mw Junction temperature T j 125 C COUPLER Isolation test voltage (RMS) t = 1 s V ISO 5 kv Total power dissipation T amb 25 C P tot 25 mw Operating ambient temperature range T amb - 4 to + 1 C Storage temperature range T stg - 55 to + 125 C Soldering temperature (1) 2 mm from case, t 1 s T sld 26 C Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to wave profile for soldering conditions for through hole devices. P tot - Total Power Dissipation (mw) 3 Coupled device 25 2 Phototransistor 15 IR-diode 1 5 4 8 12 96 117 T amb - Ambient Temperature ( C) Fig. 1 - Total Power Dissipation vs. Ambient Temperature Rev., 27-Jul-11 2 Document Number: 83548 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91
ELECTRICAL CHARACTERISTICS (, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage = 5 ma V F 1.43 1.6 V Junction capacitance V R = V, f = 1 MHz C j 5 pf OUTPUT Collector emitter voltage I C = 1 ma V CEO 7 V Emitter collector voltage I E = 1 μa V ECO 7 V Collector emitter cut-off current V CE = 2 V, = A I CEO 1 1 na COUPLER Collector emitter saturation voltage = 1 ma, I C = 1 ma V CEsat.3 V Cut-off frequency V CE = 5 V, = 1 ma, R L = 1 f c 11 khz Coupling capacitance f = 1 MHz C k.6 pf Note Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO (, unless otherwise specified) PARAMETER I C / TEST CONDITION V CE = 5 V, = 5 ma PART NUMBER SYMBOL MIN. TYP. MAX. UNIT HS817 CTR 1 3 HS817G CTR 1 3 HS817B CTR 13 26 HS817BG CTR 13 26 % SAFETY AND INSULATION PARAMETERS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT V IO = 5 V R IO 1 12 Insulation resistance V IO = 5 V, T amb = 1 C R IO 1 11 V IO = 5 V, T amb = 15 C (construction test only) R IO 1 9 Rated impulse voltage V IOTM 6 kv Max. working voltages Recurring peak voltage V IORM 85 V peak Forward current I SI 13 ma Power dissipation T amb 25 C P SO 265 mw Safety temperature T SI 15 C Creepage distance 7.6 mm Note This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. Rev., 27-Jul-11 3 Document Number: 83548 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91
3 25 Phototransistor P SO (mw) 2 15 1 5 IR-diode I SI (ma) 25 5 75 1 125 T SI - Safety Temperature ( C) 15 Fig. 2 - Derating Diagram SWITCHING CHARACTERISTICS (, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time V S = 5 V, I C = 2 ma, R L = 1, V S = 5 V, I C = 2 ma, R L = 1, V S = 5 V, I C = 2 ma, R L = 1, V S = 5 V, I C = 2 ma, R L = 1, V S = 5 V, I C = 2 ma, R L = 1, V S = 5 V, I C = 2 ma, R L = 1, V S = 5 V, = 1 ma, R L = 1 k, (see figure 4) V S = 5 V, = 1 ma, R L = 1 k, (see figure 4) t d 3 μs t r 3 μs t f 4.7 μs t s.3 μs t on 6 μs t off 5 μs t on 2 μs t off 18 μs + 5 V IC = 2 ma; adjusted through input amplitude = 1 ma + 5 V I C R G = 5 Ω R G = 5 Ω t p T =.1 t p = 5 µs 5 Ω 1 Ω Channel I Channel II Oscilloscope R L = 1 MΩ C L = 2 pf t p T =.1 t p = 5 µs 5 Ω 1 kω Channel I Channel II Oscilloscope R L 1 MΩ C L 2 pf 95 184 95 1843 Fig. 3 - Test Circuit, Non-Saturated Operation Fig. 4 - Test Circuit, Saturated Operation Rev., 27-Jul-11 4 Document Number: 83548 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91
I C t p t 1 % 9 % 1 % t r t d t on t s t f t t off t p t d t r t on (= t d + t r ) Pulse duration Delay time Rise time Turn-on time t s t f t off (= t s + t f ) Storage time Fall time Turn-off time 96 11698 Fig. 5 - Switching Times TYPICAL CHARACTERISTICS (, unless otherwise specified) V F - Forward Voltage (V) 1.6 1.5 T amb = C 1.4 T amb = - 4 C 1.3 1.1 1. T amb = 5 C.9 T amb = 75 C.8 T amb = 1 C.7.1 1 1 1 - Forward Current (ma) I CE - Leakage Current (na) 1 = ma 1 V CE = 4 V 1 V CE = 24 V 1 V CE = 12 V 1.1.1.1-4 - 2 2 4 6 8 1 T amb - Ambient Temperature ( C) Fig. 6 - Forward Voltage vs. Forward Current Fig. 8 - Leakage Current vs. Ambient Temperature 5 3 I C - Collector Current (ma) 45 = 3 ma 4 35 = 2 ma 3 = 15 ma 25 2 = 1 ma 15 1 5 = 5 ma 1 2 3 4 5 6 7 8 I C - Collector Current (ma) 25 = 25 ma 2 15 = 1 ma 1 = 5 ma 5 = 1 ma = 2 ma.1.2.3.4 V CE - Collector Emitter Voltage (NS) (V) V CE - Collector Emitter Voltage (sat) (V) Fig. 7 - Collector Current vs. Collector Emitter Voltage (NS) Fig. 9 - Collector Current vs. Collector Emitter Voltage (sat) Rev., 27-Jul-11 5 Document Number: 83548 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91
N CTR - Normalized CTR (sat) 1..8.6.4.2 = 1 ma = 1 ma = 5 ma V CE =.4 V Normalized to: = 5 ma, V CE = 5 V, N CTR - Normalized CTR (sat) 1..8.6.4.2 V CE =.4 V Normalized to: = 5 ma, V CE = 5 V, T amb = C T amb = 75 C T amb = 1 C T amb = - 4 C - 4-2 2 4 6 8 1 T amb - Ambient Temperature ( C).1 1 1 1 - Forward Current (ma) Fig. 1 - Normalized CTR (sat) vs. Ambient Temperature Fig. 13 - Normalized CTR (sat) vs. Forward Current N CTR - Normalized CTR (NS) 1.4 1..8.6.4.2 = 1 ma = 1 ma = 5 ma Normalized to: = 5 ma, V CE = 5 V, - 4-2 2 4 6 8 1 T amb - Ambient Temperature ( C) F CTR (khz) 1 V CE = 5 V 1 1 1.1 1 1 1 I C - Collector Current (ma) Fig. 11 - Normalized CTR (NS) vs. Ambient Temperature Fig. 14 - F CTR vs. Collector Current N CTR - Normalized CTR (NS) 1..8.6.4.2 T amb = - 4 C T amb = C T amb = 75 C T amb = 1 C Normalized to: = 5 A, V CE = 5 V,.1 1 1 1 - Forward Current (ma) Phase (deg) - 2-4 - 6-8 - 1-12 - 14 V CE = 5 V - 16 1 1 1 1 Frequency (khz) Fig. 12 - Normalized CTR (NS) vs. Forward Current Fig. 15 - F CTR vs. Phase Angle Rev., 27-Jul-11 6 Document Number: 83548 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91
t on, t off - Switching Time (μs) 1 1 1 1 V CE = 5 V, = 1 ma t off.1.1 1 1 1 t on R L - Load Resistance (kω) Fig. 16 - Switching Time vs. Load Resistance PACKAGE DIMENSIONS in millimeters 6.5 ±.3 Pin 1 identifier 4.58 ±.3.4 ±.1 7.62 to 9.5 7.62 typ. G type 7.62 typ. 3.5 ±.3 4.5 ±.3 3.5 ±.3.1 min. 1.3 ±.1 to 15 2.8 ±.5 2.7 min. i17827-14.5 ±.1 2.54 typ..25 typ. 1.16 typ. PACKAGE MARKING (example) HS817 V YWW 24 Rev., 27-Jul-11 7 Document Number: 83548 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91
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